Proprietà ottiche di film sottili a base di silicio per applicazioni fotovoltaiche

Questa tesi ha come obiettivo quello di misurare la dipendenza spettrale di alcune proprietà ottiche, come trasmittanza e riflettanza, al fine di ricavare l’energy gap di film sottili costituiti da nanocrystalline silicon oxynitride (nc-SiOxNy) per applicazioni in celle solari HIT (Heterojunction Intrinsic Thin layer). Questi campioni sono stati depositati presso l’Università di Konstanz (Germania) tramite tecnica PECVD (Plasma-Enhanced Chemical Vapor Deposition). Questo materiale risulta ancora poco conosciuto per quanto riguarda le proprietà optoelettroniche e potrebbe presentare una valida alternativa a silicio amorfo (a-Si) e ossido di silicio idrogenato amorfo (a-SiOx:H) che sono attualmente utilizzati in questo campo. Le misure sono state effettuate presso i laboratori del Dipartimento di Fisica e Astronomia, settore di Fisica della Materia, dell’Università di Bologna. I risultati ottenuti mostrano che i campioni che non hanno subito alcun trattamento termico (annealing) presentano un energy gap che cresce linearmente rispetto alla diluizione di protossido di azoto in percentuale. Nei campioni analizzati sottoposto ad annealing a 800°C si è osservato un aumento dell’Eg dopo il trattamento. Un risultato ottimale consiste in un gap energetico maggiore di quello del silicio amorfo (a-Si) e del silicio amorfo idrogenato (a-Si:H), attualmente utilizzati in questa tipologia di celle, per evitare che questo layer assorba la luce solare che deve invece essere trasmessa al silicio sottostante. Per questo motivo i valori ottenuti risultano molto promettenti per future applicazioni fotovoltaiche.

Misure di trasmittanza ottica di nanoparticelle di Ti(1-x)V(x)O(2)

Negli ultimi tempi sta assumendo grande importanza la ricerca sulla produzione di idrogeno dall’acqua tramite celle foto-elettrolitiche. In questa tesi vengono descritte le analisi condotte su un materiale che può essere coinvolto in questa applicazione: il TiO2 drogato con atomi di V. In particolare è stato valutato l’effetto del drogaggio sull’energy gap tramite misure di trasmittanza ottica effettuate in laboratorio su campioni con diverse concentrazioni di V e trattati termicamente a varie temperature. Nel primo capitolo vengono descritte le caratteristiche dei semiconduttori legate all’ottica, soffermandosi in particolare sul TiO2. Nel secondo capitolo sono illustrati l’apparato e il metodo sperimentale; viene inoltre fornita una descrizione dettagliata dei campioni analizzati. Nel terzo capitolo vengono esposti i risultati delle analisi dei dati.

Temperatur- und ortsabhängige Zustandsdichte des organischen Supraleiters Kappa-(BEDT-TTF) 2 Cu[N(CN) 2]Br

Im Rahmen dieser Arbeit wurde die temperatur- und ortsabhängige Zustandsdichte des organischen Supraleiters kappa-(BEDT-TTF)2Cu[N(CN)2]Br mit Rastertunnelspektroskopie bei tiefen Temperaturen untersucht.rnZusätzlich zur bereits bekannten supraleitenden Energielücke wird dabei eine logarithmische Unterdrückung der Zustandsdichte an der Fermikante beobachtet, die auch oberhalb der kritischen Temperatur erhalten bleibt. In der vorliegenden Arbeit wird gezeigt, dass sich dieses Verhalten durch ein für ungeordnete elektronische Systeme entwickeltes Modell unter Berücksichtigung von Coulomb-Wechselwirkungen beschreiben lässt. Die daraus resultierenden Fluktuationen der elektronischen Struktur führen zu einer Verbreiterung der gemessenen supraleitenden Energielücke, die sich durch sehr kleine Kohärenzmaxima im entsprechenden Quasiteilchenanregungsspektrum äußert. Dieses Verhalten wurde bereits beobachtet, konnte jedoch bisher nicht erklärt werden. Die theoretische Beschreibung der logarithmischen Unterdrückung trägt somit zusätzlich zum Verständnis des supraleitenden Beitrags bei, sodass die gesamte Zustandsdichte vollständig beschrieben werden kann. Die Analyse der gemessenen supraleitenden Energielücke wurde für verschiedene Symmetrien des Ordnungsparameters durchgeführt, wobei die beste Übereinstimmung für die Annahme einer d-wellenartigen Symmetrie mit zwei unterschiedlich stark ausgeprägten Energielücken gefunden wurde. Der Paarbildungsmechanismus, der zur Bindung zweier Elektronen zu einem Cooper-Paar führt, kann mit einer $d$-wellenartigen Symmetrie nicht durch die in konventionellen Supraleitern gefundene Elektron-Phonon-Kopplung erklärt werden. Stattdessen wird in Analogie zur Hochtemperatur-Supraleitung eine durch antiferromagnetische Spin-Wechselwirkungen induzierte Kopplung der Elektronen vermutet. Dies wird zum einen durch die oberhalb der kritischen Temperatur auftretende, zweite Energielücke und zum anderen durch die zwischen 4,66 und 5,28 liegende Kopplungsstärke 2Delta/(kB Tc) unterstützt, die deutlich größer als für konventionelle Supraleiter mit Elektron-Phonon-Kopplung ist.

Tuning of magnetic exchange interactions between organic radicals through bond and space

The dissertation entitled "Tuning of magnetic exchange interactions between organic radicals through bond and space" comprises eight chapters. In the initial part of chapter 1, an overview of organic radicals and their applications were discussed and in the latter part motivation and objective of thesis was described. As the EPR spectroscopy is a necessary tool to study organic radicals, the basic principles of EPR spectroscopy were discussed in chapter 2. rnAntiferromagnetically coupled species can be considered as a source of interacting bosons. Consequently, such biradicals can serve as molecular models of a gas of magnetic excitations which can be used for quantum computing or quantum information processing. Notably, initial small triplet state population in weakly AF coupled biradicals can be switched into larger in the presence of applied magnetic field. Such biradical systems are promising molecular models for studying the phenomena of magnetic field-induced Bose-Einstein condensation in the solid state. To observe such phenomena it is very important to control the intra- as well as inter-molecular magnetic exchange interactions. Chapters 3 to 5 deals with the tuning of intra- and inter-molecular exchange interactions utilizing different approaches. Some of which include changing the length of π-spacer, introduction of functional groups, metal complex formation with diamagnetic metal ion, variation of radical moieties etc. During this study I came across two very interesting molecules 2,7-TMPNO and BPNO, which exist in semi-quinoid form and exhibits characteristic of the biradical and quinoid form simultaneously. The 2,7-TMPNO possesses the singlet-triplet energy gap of ΔEST = –1185 K. So it is nearly unrealistic to observe the magnetic field induced spin switching. So we studied the spin switching of this molecule by photo-excitation which was discussed in chapter 6. The structural similarity of BPNO with Tschitschibabin’s HC allowed us to dig the discrepancies related to ground state of Tschitschibabin’s hydrocarbon(Discussed in chapter 7). Finally, in chapter 8 the synthesis and characterization of a neutral paramagnetic HBC derivative (HBCNO) is discussed. The magneto liquid crystalline properties of HBCNO were studied by DSC and EPR spectroscopy.rn

Pyrene derivatives as donors and acceptors

Pyrene derivatives as donors and acceptorsrnrnAlmost 200 years have passed since pyrene was first discovered, and to this day it garners unbroken interest by chemists around the world. One of the most fascinating areas of pyrene chemistry is its selective functionalization, since it is still currently a challenge to specifically functionalize different positions on the molecule.[1]rnIn this work, two new patterns of pyrene substitution have been developed. Under suitable conditions, a fourfold bromination of 4,5,9,10 tetramethoxypyrene is possible to yield eightfold functionalized pyrenes. Based on these molecules a novel series of 1,3,4,5,6,8,9,10-substituted pyrene derivatives was achieved. Synthetic approaches to a non-quinoidal, strong pyrene-4,5,9,10-tetraone based acceptor have been discussed. It emerged that the chosen synthetic approach is suitable for intermediate acceptors, yet it failed very electron deficient pyrene derivatives. Donors based on 4,5,9,10-tetramethoxypyrene (2,7- and 1,3,6,8-substitued) have been prepared and studied as CT complexes. In the SFB/TR 49 these complexes were analyzed in the solid state. For the first time charge transfer in a non-TTF CT-complex was studied by HAXPES and NEXAFS.rnBased on the works of ZÖPHEL et al.[2] it was possible to obtain an asymmetric 4,9,10 substituted pyrene derivative. This was used as a building block to prepare a non-planar acceptor molecule as well as electron-rich rylene-type molecules. rnFinally, two separate series of molecules intended as emitters for OLEDs were presented. Thermally activated delayed fluorescence (TADF) in OLEDs attracted significant academic interest as it is considered a promising approach to improve the efficiency of fluorescent OLEDs.[3] Our molecules were designed to have a deep blue emission spectrum and a minimal singlet triplet energy gap (∆ES1->T1) while retaining a high fluorescence quantum yield ϕPL. The initial OD series has a small ∆ES1->T1, yet had an insufficient ϕPL for the use in OLEDs. The Py series emitters, in contrast, combine both desired properties and were successfully implemented in efficient OLED devices.rn[1]. T. M. Figueira-Duarte and K. Müllen, Chem. Rev., 2011, 111, 7260-7314.rn[2]. L. Zöphel, V. Enkelmann and K. Müllen, Org. Lett., 2013, 15, 804-807.rn[3]. H. Uoyama, K. Goushi, K. Shizu, H. Nomura and C. Adachi, Nature, 2012, 492, 234-238.

Realizzazione di un amplificatore lock-in digitale

Tra tutte le tecniche sviluppate per il recupero di segnali, i metodi basati sul principio di rilevazione sincrona, utilizzati dagli amplificatori lock-in, sono largamente i più usati in tutti i campi della ricerca scientifica. Gli amplificatori lock-in sono strumenti utilizzati per rilevare e misurare segnali in ambienti in cui il rumore di fondo può essere di diversi ordini di grandezza più grande del segnale che si intende misurare. In questo lavoro viene presentato un metodo per realizzare un amplificatore lock-in digitale su scheda hardware NI ELVIS II+ e software LabVIEW. In seguito viene descritto come, attraverso test opportuni, sono state analizzate le performance del sistema realizzato e sono state confrontate con i sistemi disponibili commercialmente. Infine, l’amplificatore lock-in realizzato è stato poi utilizzato in un esperimento di misura spettroscopica dell’energia di gap di un campione di Germanio per mezzo dell’effetto fotoelettrico interno.

Structure and properties of graphene nano disks (GND) with and without edge-dopants

Graphene is one of the most important materials. In this research, the structures and properties of graphene nano disks (GND) with a concentric shape were investigated by Density Functional Theory (DFT) calculations, in which the most effective DFT methods - B3lyp and Pw91pw91 were employed. It was found that there are two types of edges - Zigzag and Armchair in concentric graphene nano disks (GND). The bond length between armchair-edge carbons is much shorter than that between zigzag-edge carbons. For C24 GND that consists of 24 carbon atoms, only armchair edge with 12 atoms is formed. For a GND larger than the C24 GND, both armchair and zigzag edges co-exist. Furthermore, when the number of carbon atoms in armchair-edge are always 12, the number of zigzag-edge atoms increases with increasing the size of a GND. In addition, the stability of a GND is enhanced with increasing its size, because the ratio of edge-atoms to non-edge-atoms decreases. The size effect of a graphene nano disk on its HOMO-LUMO energy gap was evaluated. C6 and C24 GNDs possess HOMO-LUMO gaps of 1.7 and 2.1eV, respectively, indicating that they are semi-conductors. In contrast, C54 and C96 GNDs are organic metals, because their HOMO-LUMO gaps are as low as 0.3 eV. The effect of doping foreign atoms to the edges of GNDs on their structures, stabilities, and HOMO-LUMO energy gaps were also examined. When foreign atoms are attached to the edge of a GND, the original unsaturated carbon atoms become saturated. As a result, both of the C-C bonds lengths and the stability of a GND increase. Furthermore, the doping effect on the HOMO-LUMO energy gap is dependent on the type of doped atoms. The doping H, F, or OH into the edge of a GND increases its HOMO-LUMO energy gap. In contrast, a Li-doped GND has a lower HOMO-LUMO energy gap than that without doping. Therefore, Li-doping can increase the electrical conductance of a GND, whereas H, F, or OH-doping decreases its conductance.

PROPERTIES AND STRUCTURES OF Li-N BASED HYDROGEN STORAGE MATERIALS

Traditional transportation fuel, petroleum, is limited and nonrenewable, and it also causes pollutions. Hydrogen is considered one of the best alternative fuels for transportation. The key issue for using hydrogen as fuel for transportation is hydrogen storage. Lithium nitride (Li3N) is an important material which can be used for hydrogen storage. The decompositions of lithium amide (LiNH2) and lithium imide (Li2NH) are important steps for hydrogen storage in Li3N. The effect of anions (e.g. Cl-) on the decomposition of LiNH2 has never been studied. Li3N can react with LiBr to form lithium nitride bromide Li13N4Br which has been proposed as solid electrolyte for batteries. The decompositions of LiNH2 and Li2NH with and without promoter were investigated by using temperature programmed decomposition (TPD) and X-ray diffraction (XRD) techniques. It was found that the decomposition of LiNH2 produced Li2NH and NH3 via two steps: LiNH2 into a stable intermediate species (Li1.5NH1.5) and then into Li2NH. The decomposition of Li2NH produced Li, N2 and H2 via two steps: Li2NH into an intermediate species --- Li4NH and then into Li. The kinetic analysis of Li2NH decomposition showed that the activation energies are 533.6 kJ/mol for the first step and 754.2 kJ/mol for the second step. Furthermore, XRD demonstrated that the Li4NH, which was generated in the decomposition of Li2NH, formed a solid solution with Li2NH. In the solid solution, Li4NH possesses a similar cubic structure as Li2NH. The lattice parameter of the cubic Li4NH is 0.5033nm. The decompositions of LiNH2 and Li2NH can be promoted by chloride ion (Cl-). The introduction of Cl- into LiNH2 resulted in the generation of a new NH3 peak at low temperature of 250 °C besides the original NH3 peak at 330 °C in TPD profiles. Furthermore, Cl- can decrease the decomposition temperature of Li2NH by about 110 °C. The degradation of Li3N was systematically investigated with techniques of XRD, Fourier transform infrared (FT-IR) spectroscopy, and UV-visible spectroscopy. It was found that O2 could not affect Li3N at room temperature. However, H2O in air can cause the degradation of Li3N due to the reaction between H2O and Li3N to LiOH. The produced LiOH can further react with CO2 in air to Li2CO3 at room temperature. Furthermore, it was revealed that Alfa-Li3N is more stable in air than Beta-Li3N. The chemical stability of Li13N4Br in air has been investigated by XRD, TPD-MS, and UV-vis absorption as a function of time. The aging process finally leads to the degradation of the Li13N4Br into Li2CO3, lithium bromite (LiBrO2) and the release of gaseous NH3. The reaction order n = 2.43 is the best fitting for the Li13N4Br degradation in air reaction. Li13N4Br energy gap was calculated to be 2.61 eV.

The Domestic Natural Gas Shortage in China

This thesis analyzes the domestic shortage in the Chinese natural gas market. Both the domestic supply and demand of natural gas are growing fast in China. However, the supply cannot catch up with the demand. Under the present pricing mechanism, the Chinese natural gas market cannot get the equilibrium by itself. Expensive imports are inadequate to fill the increasing gap between the domestic demand and supply. Therefore, the shortage problem occurs. Since the energy gap can result in the arrested development of economics, the shortage problem need to be solved. This thesis gives three suggestions to solve the problem: the use of Unconventional Gas, Natural Gas Storage and Pricing Reform.

Excitonic Splitting, Delocalization, and Vibronic Quenching in the Benzonitrile Dimer

The excitonic S1/S2 state splitting and the localization/delocalization of the S1 and S2 electronic states are investigated in the benzonitrile dimer (BN)2 and its 13C and d5 isotopomers by mass-resolved two-color resonant two-photon ionization spectroscopy in a supersonic jet, complemented by calculations. The doubly hydrogen-bonded (BN-h5)2 and (BN-d5)2 dimers are C2h symmetric with equivalent BN moieties. Only the S0 → S2 electronic origin is observed, while the S0 → S1 excitonic component is electric-dipole forbidden. A single 12C/13C or 5-fold h5/d5 isotopic substitution reduce the dimer symmetry to Cs, so that the heteroisotopic dimers (BN)2-(h5 – h513C), (BN)2-(h5 – d5), and (BN)2-(h5 – h513C) exhibit both S0 → S1 and S0 → S2 origins. Isotope-dependent contributions Δiso to the excitonic splittings arise from the changes of the BN monomer zero-point vibrational energies; these range from Δiso(12C/13C) = 3.3 cm–1 to Δiso(h5/d5) = 155.6 cm–1. The analysis of the experimental S1/S2 splittings of six different isotopomeric dimers yields the S1/S2 exciton splitting Δexc = 2.1 ± 0.1 cm–1. Since Δiso(h5/d5) ≫ Δexc and Δiso(12C/13C) > Δexc, complete and near-complete exciton localization occurs upon 12C/13C and h5/d5 substitutions, respectively, as diagnosed by the relative S0 → S1 and S0 → S2 origin band intensities. The S1/S2 electronic energy gap of (BN)2 calculated by the spin-component scaled approximate second-order coupled-cluster (SCS-CC2) method is Δelcalc = 10 cm–1. This electronic splitting is reduced by the vibronic quenching factor Γ. The vibronically quenched exciton splitting Δelcalc·Γ = Δvibroncalc = 2.13 cm–1 is in excellent agreement with the observed splitting Δexc = 2.1 cm–1. The excitonic splittings can be converted to semiclassical exciton hopping times; the shortest hopping time is 8 ps for the homodimer (BN-h5)2, the longest is 600 ps for the (BN)2(h5 – d5) heterodimer.

Ion acceleration in underdense plasmas by ultra-short laser pulses

We report on the ion acceleration mechanisms that occur during the interaction of an intense and ultrashort laser pulse ( λ > μ I 2 1018 W cm−2 m2) with an underdense helium plasma produced from an ionized gas jet target. In this unexplored regime, where the laser pulse duration is comparable to the inverse of the electron plasma frequency ωpe, reproducible non-thermal ion bunches have been measured in the radial direction. The two He ion charge states present energy distributions with cutoff energies between 150 and 200 keV, and a striking energy gap around 50 keV appearing consistently for all the shots in a given density range. Fully electromagnetic particle-in-cell simulations explain the experimental behaviors. The acceleration results from a combination of target normal sheath acceleration and Coulomb explosion of a filament formed around the laser pulse propagation axis

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Exact solution, scaling behaviour and quantum dynamics of a model of an atom-molecule Bose-Einstein condensate

0We study the exact solution for a two-mode model describing coherent coupling between atomic and molecular Bose-Einstein condensates (BEC), in the context of the Bethe ansatz. By combining an asymptotic and numerical analysis, we identify the scaling behaviour of the model and determine the zero temperature expectation value for the coherence and average atomic occupation. The threshold coupling for production of the molecular BEC is identified as the point at which the energy gap is minimum. Our numerical results indicate a parity effect for the energy gap between ground and first excited state depending on whether the total atomic number is odd or even. The numerical calculations for the quantum dynamics reveals a smooth transition from the atomic to the molecular BEC.

The physical and chemical properties of eumelanin

In this article, we review the current state of knowledge concerning the physical and chemical properties of the eumelanin pigment. We examine properties related to its photoprotective functionality, and draw the crucial link between fundamental molecular structure and observable macroscopic behaviour. Where necessary, we also briefly review certain aspects of the pheomelanin literature to draw relevant comparison. A full understanding of melanin function, and indeed its role in retarding or promoting the disease state, can only be obtained through a full mapping of key structure-property relationships in the main pigment types. We are engaged in such an endeavor for the case of eumelanin.

Proposal and design of airy-based rocket pulses for invariant propagation in lossy dispersive media

A novel kind of Airy-based pulse with an invariant propagation in lossy dispersive media is proposed. The basic principle is based on an optical energy trade-off between different parts of the pulse caused by the chromatic dispersion, which is used to compensate the attenuation losses of the propagation medium. Although the ideal concept of the proposed pulses implies infinite pulse energy, the numerical simulations show that practical finite energy pulses can be designed to obtain a partially invariant propagation over a finite distance of propagation.