Ultraviolet-blue electroluminescence from Gd3Ga5O12 : Ag

UV-blue light was obtained from a thin-film electroluminescence device using Gd3Ga5O12:Ag as a light-emitting layer, which was deposited by using electron-beam evaporation. The crystal composition and structure of Gd3Ga5O12:Ag were studied by x-ray powder diffraction, The Gd3Ga5O12:Ag has a photoluminescence emission which peaked at around 397 and 467 nm, which were attributed to the oxide vacancies and Ag+, respectively. The brightness of 32 cd/m(2) was obtained when an alternating voltage of 130 V at 1 kHz was applied. (C) 2000 American Institute of Physics. [S0003-6951(00)05031-2].

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method

Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Investigation on charge transfer bands of Ce4+ in Sr2CeO4 blue phosphor

Bulk and nano-materials Sr2CeO4 were prepared by solid-state reaction and sol-gel technique, respectively. Photoluminescence shows that luminescence has the characteristic of a ligand-to-metal charge transfer (CT) emission. Compared with bulk Sr2CeO4, the nano-material exhibits stronger emission intensity, longer decay time, and higher CT excitation energy. Three CT excitation peaks were observed in both bulk and nano samples.

LaGaO3 : A (A=Sm3+ and/or Tb3+) as promising phosphors for field emission displays

LaGaO3:Sm3+, LaGaO3:Tb3+ and LaGaO3: Sm3+, Tb3+ phosphors were prepared through a Pechini-type sol-gel process. X-Ray diffraction, field emission scanning electron microscopy, photoluminescence (PL), and cathodoluminescence (CL) spectroscopy were utilized to characterize the synthesized phosphors. Under excitation with ultraviolet light (250-254 nm), the LaGaO3: Sm3+, LaGaO3: Tb3+ and LaGaO3: Sm3+, Tb3+ phosphors mainly show the characteristic broadband emission (from 300 to 600 nm with a maximum around 430 nm) of the LaGaO3 host lattice, accompanied by the weak emission of Sm3+ ((4)G(5/2) -> H-6(5/2), H-6(7/2), H-6(9/2) transitions) and/or Tb3+ (D-5(3,4) -> F-7(6,5,4,3) transitions). However, under excitation by low-voltage electron beams (1-3 kV), the LaGaO3: Sm3+, LaGaO3: Tb3+ and LaGaO3: Sm3+, Tb3+ phosphors exhibit exclusively the characteristic emissions of Sm3+ and/or Tb3+ with yellow (Sm3+), blue (Tb3+, with low concentrations) and white (Sm3+ + Tb3+) colors, respectively.

Fluorene-Based Copolymers Containing Dinaphtho-s-indacene as New Building Blocks for High-Efficiency and Color-Stable Blue LEDs

By incorporating a new building block, 7,7,15,15-tetraoctyldinaphtho-s-indacene (NSI), into the backbone of poly(9,9-dioctylfluorene) (PFO), a novel series of blue light-emitting copolymers (PFO-NSI) have been developed. The insertion of the NSI unit into the PFO backbone leads to the increase of local effective conjugation length, to form low-energy fluorene-NSI-fluorene (FNF) segments that serve as exciton trapping sites, to which the energy transfers from the high-energy PFO segments. This causes these copolymers to show red-shifted emissions compared with PFO, with a high efficiency and good color stability and purity. The best device performance with a luminance efficiency of 3.43 cd . A(-1), a maximum brightness of 6 539 cd . m(-2) and CIE coordinates of (0.152, 0.164) was achieved.

Controllable Red, Green, Blue (RGB) and Bright White Upconversion Luminescence of Lu2O3:Yb3+/Er3+/Tm3+ Nanocrystals through Single Laser Excitation at 980 nm

Lu2O3:Yb3+/Er3+/Tm3+ nanocrystals have been successfully synthesized by a solvothermal process followed by a subsequent heat treatment at 800 degrees C. Powder X-ray diffraction, transmission electron microscopy, upconversion photoluminescence spectra, and kinetic decay were used to characterize the samples. Under single-wavelength diode laser excitation of 980 nm, the bright blue emissions of Lu2O3:Yb3+, Tm3+ nanocrystals near 477 and 490 nm were observed due to the (1)G(4)-> H-3(6) transition of Tm3+. The bright green UC emissions of Lu2O3:Er3+ nanocrystals appeared near 540 and 565 nm were observed and assigned to the H-2(11/2)-> I-4(15/2) and S-4(3/2)-> I-4(15/2) transitions, respectively, of Er3+. The ratio of the intensity of green luminescence to that of red luminescence decreases with an increase of concentration of Yb3+ in Lu2O3:Er3+ nanocrystals.

Nanocrystalline LaOCl:Tb3+/Sm3+ as promising phosphors for full-color field-emission displays

Nanocrystalline LaOCl:Tb3+/Sm3+ phosphors were synthesized by a Pechini-type sol-gel process. Under UV and electron-beam excitation, LaOCl:Tb3+/Sm3+ show the characteristic emission of Tb3+ (D-5(3,4) -> F-7(6), ... (2)) and Sm3+ ((4)G(5/2) -> H-6(5/2),(7/2),(9/2)), respectively. In particular, the cathodoluminescence (CL) color of LaOCl:Tb3+ can be tuned from blue to green by changing Tb3+-doped concentration, and their CL intensities (brightness) are higher than those of commercial products Y2SiO5:Ce3+ and ZnO:Zn, respectively. White CL can be realized by codoping with Tb3+ and Sm3+ in a single-phase LaOCl host. The obtained white light is very close to the standard white light. These phosphors are promising for application in field-emission displays.

Synthesis and luminescent properties of LaInO3: RE3+ (RE = Sm, Pr and Tb) nanocrystalline phosphors for field emission displays

LaInO3: Sm3+, LaInO3: Pr3+ and LaInO3: Tb3+ phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction, field emission scanning electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. XRD results reveal that the pure LaInO3 phase can also be obtained at 700 degrees C. FE-SEM images indicate that the LaInO3: Sm3+, LaInO3: Pr3+ and LaInO3: Tb3+ phosphors are composed of aggregated spherical particles with sizes around 80-120 nm. Under the excitation of ultraviolet light and low voltage electron beams (1-5 kV), the LaInO3: Sm3+, LaInO3: Pr3+ and LaInO3: Tb3+ phosphors show the characteristic emissions of Sm3+ ((4)G(5/2)-H-6(5/2,7/2,9/2) transitions, yellow), Pr3+ (P-3(0)-H-3(4), P-3(1)-H-3(5), D-1(2)-H-3(4) and P-3(0)-F-3(2) transitions, blue-green) and Tb3+ (D-5(4)-F-7(6.5,4.3) transitions, green) respectively. The corresponding luminescence mechanisms are discussed. These phosphors have potential applications in field emission displays.

Bridged triphenylamines as novel host materials for highly efficient blue and green phosphorescent OLEDs

Two bridged triphenylamine-triphenylsilane (BTPASi) hybrids have been designed as host materials for phosphorescent OLEDs; devices with the novel host materials achieve maximum external quantum efficiencies as high as 15.4% for blue and 19.7% for green electrophosphorescence.

Nonconjugated Carbazoles: A Series of Novel Host Materials for Highly Efficient Blue Electrophosphorescent OLEDs

A series of carbazole derivatives was synthesized and their electrical and photophysical properties were investigated. It is shown that the triplet energy levels of these hosts are higher than that of the most popular blue phosphorescent material iridium(III) bis[(4,6-difluorophenyl)pyridinato-N,C-2'] picolinate (FIrpic) and the most extensively used phosphorescent host material 4,4'-N,N'-dicarbazole-biphenyl (CBP). These new host materials also showed good thermal stability and high glass transition temperatures (T-g) ranging from 78 to 115 degrees C as the linkage group between the carbazoles was altered. Photophysical measurements indicate that the energy transfer between these new hosts and FIrpic is more efficient than that between CBP and FIrpic. Devices incorporating these novel carbazole derivatives as the host material doped with FIrpic were fabricated with the configurations of ITO/NPB (40 nm)/host:FIrpic (30 nm)/BCP (15 nm)/AlQ (30 nm)/LiF (1 nm)/Al (150 nm). High efficiencies (up to 13.4 cd/A) have been obtained when 1,4-bis (4-(9H-carbazol-9-yl)phenyl)cyclohexane (CBPCH) and bis(4-(9H-carbazol-9-yl)phenyl) ether (CBPE) were used as the host, respectively.

Luminescent properties of a new blue long-lasting phosphor Ca2P2O7:Eu2+, Y3+

A new pyrophosphate long-lasting phosphor with composition of Ca1.96P2O7:0.02Eu(2+), 0.02Y(3+) is synthesized via the high-temperature solid-state reaction method. Its properties are systematically investigated utilizing XRD, photoluminescence, phosphorescence and thermoluminescence (TL) spectra. The phosphor emits blue light that is related to the characteristic emission of Eu2+ due to 5d-4f transitions. For the optimized sample, bright blue long-lasting phosphorescence (LLP) could be observed by naked eyes even 6 h after the excitation source is removed. The TL spectra show that the doping of Y3+ ions greatly enhanced intensity of 335 K peak and created new TL peak at about 373 K that is also responsible for the blue LLP. Based on our study, Y3+ ions are suggested to act as electron traps to improve the performance of the blue phosphorescence of Eu2+ such as intensity and persistent time.

Blue long lasting phosphorescence of Tm3+ in zinc pyrophosphate phosphor

Phosphate long lasting phosphorescence (LLP) phosphors with composition of (Zn1-xTmx)(2)P2O7 were prepared by the high-temperature solid-state method. Their properties were systematically investigated utilizing XRD, photoluminescence, phosphorescence and thermoluminescence (TL) spectra. These phosphors emit blue light that is related to the characteristic emission due to the D-1(2)-H-3(6), D-1(2)-H-3(4) and (1)G(4)-H-3(6) transitions of Tm3+. After the UV light excitation source was switched off, the bright blue long lasting phosphorescence can be observed which could last for more than 1 h in the limit of light perception of dark-adapted human eyes (0.32 mcd/m(2)). Two TL peaks at 336 K and 415 K appeared in the TL spectrum. By analyzing the TL curve the depths of traps were calculated to be 0.67 eV and 0.97 eV, respectively.Also, the mechanism was discussed in this report.

Nanocrystalline LaAlO3:Sm3+ as a Promising Yellow Phosphor for Field Emission Displays

Nanocyrstalline LaAlO3:Sm3+ phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. XRD results reveal that the sample begins to crystallize at 600 degrees C, and pure LaAlO3 phase can be obtained at 700 degrees C. FE-SEM images indicate that the Sm3+-doped LaAlO3 phosphors are composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of UV light (245 nm) and low-voltage electron beams (1-3 kV), the Sm3+-doped LaAlO3 phosphors show the characteristic emissions of the Sm3+ ((4)G(5/2)-H-6(5/2), H-6(7/2), H-6(9/2) transitions) with a yellow color. The CL intensity (brightness) of the Sm3+-doped LaAlO3 phosphor is higher than that of the commercial product [Zn(Cd)S:Ag+] (yellow) to some extent.