Fast plasma sintering deposition of nano-structured silicon carbide coatings

Fast plasma sintering deposition of SiC nano-structured coatings was achieved using a specially designed non-transferred dc plasma torch operated at reduced pressure. Employing the Taguchi method, the deposition parameters were optimized and verified. With the optimized combination of deposition parameters, homogeneous SiC coatings were deposited on relatively large area substrates of Φ50 mm and 50×50 mm with a deposition rate as high as 20 μm/min. Ablation test showed that such coatings can be used as oxidation resistance coatings in high temperature oxidizing environment.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Excitation and dissociation of tungsten hexacarbonyl W(CO)(6): Statistical and nonstatistical dissociation processes

We have studied the excitation and dissociation processes of the molecule W(CO)(6) in collisions with low kinetic energy (3 keV) protons, monocharged fluorine, and chlorine ions using double charge transfer spectroscopy. By analyzing the kinetic energy loss of the projectile anions, we measured the excitation energy distribution of the produced transient dications W(CO)(6)(2+). By coincidence measurements between the anions and the stable or fragments of W(CO)(6)(2+), we determined the energy distribution for each dissociation channel. Based on the experimental data, the emission of the first CO was tentatively attributed to a nonstatistical direct dissociation process and the emission of the second or more CO ligands was attributed to the statistical dissociation processes. The dissociation energies for the successive breaking of the W-CO bond were estimated using a cascade model. The ratio between charge separation and evaporation (by the loss of CO+ and CO, respectively) channels was estimated to be 6% in the case of Cl+ impact. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3523347]

A novel (W-Al)-C-Co composite cemented carbide prepared by mechanical alloying and hot-pressing sintering

Novel cemented carbides (W0.4Al0.6)C-0.5-Co With different cobalt contents were prepared by mechanical alloying and hot-pressing technique. Hot-pressing technique as a common technique was performed to fabricate the bulk bodies of the hard alloys. The novel cemented carbides have good mechanical properties compared with WC-Co. The density and operation cost of the novel material were much lower than the WC-Co system. It was easy to process submicroscale sintering with the novel materials and obtain the rounded particles in the bulk materials. There is almost no eta-phase in the (W0.4Al0.6)C-0.5-CO cemented carbides system although the carbon deficient obtains the astonishing value of 50%.

Preparation of Hollow Carbon and Silicon Carbide Fibers with Different Cross-Sections by using Electrospun Fibers as Templates

Hollow carbon nanofibers with circular and rectangular opening were prepared by using electrospun silica fibers as templates. Silica fibers were synthesized by electrospinning, and they were coated with a carbon layer formed by thermal decomposition and carbonization of polystyrene under a nitrogen atmosphere. Hollow carbon nanofibers with circular and rectangular openings were then obtained after the silica core was etched by hydrofluoric acid. The carbon nanofibers with different morphologies also could be used as templates to fabricate silicon carbide fibers. The silicon carbide fibers with circular and rectangular openings could be obtained by using hollow carbon nanofibers and carbon belts as templates, respectively.

Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C.

Microstructure, thermal stability and mechanical properties of the novel (W1-xAlx)C-Co (x=0.2, 0.33, 0.4, 0.5) cemented carbide

Bulk novel cemented carbides (W1-xAlx)C-10.1 vol% Co (x = 0.2, 0.33, 0.4, 0.5) are prepared by mechanical alloying and hot-pressing sintering. Hot-pressing (HP) is used to fabricate the bulk bodies of the hard alloys. The novel cemented carbides have good mechanical properties compared with WC-Co. The density and operating cost of the novel material is much lower than a WC-Co system. The material is easy to process and the processing leads to nano-scaled, rounded, particles in the bulk material. The hardness of (W1-xAlx)C-10.1 vol% Co (x = 0.2, 0.33, 0.4, 0.5) hard material is 20.37, 21.16, 21.59 and 22.16 GPa, and the bending strength is 1257, 1238, 1211 and 1293 MPa, with the aluminum content varying from 20% to 50%. The relationship between the microstructure and the mechanical properties of the novel hard alloy is also discussed.