2.2 eV luminescence in GaN

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.

Five channel WDM communication using a single a:SiC-H double pin photo device

Amorphous SiC heterostructures built as a double pin device has a non linear spectral gain which is a function of the signal wavelength that impinges on its front or back surface. Illuminating the device with several single wavelength data channels in the visible spectrum allows for Wavelength Division Multiplexing (WDM) digital communication. Using fixed ultra-violet illumination at the front or back surfaces enables the recovery of the multiplexed channels. Five channels, each using a single wavelength which is modulated by a Manchester coded signal at 12,000 bps, form a frame with 1024 bits with a preamble for signal intensity and synchronisation purposes. Results show that the clustering of the received signal enables the successful recovery of the five channel data using the front and back illumination of the surfaces of the double pin photo device. (C) 2015 Elsevier B.V. All rights reserved.

Advanced Analytical Microscopy at the Nanoscale: Applications in Wide Bandgap and Solid Oxide Fuel Cell Materials

The atomic-level structure and chemistry of materials ultimately dictate their observed macroscopic properties and behavior. As such, an intimate understanding of these characteristics allows for better materials engineering and improvements in the resulting devices. In our work, two material systems were investigated using advanced electron and ion microscopy techniques, relating the measured nanoscale traits to overall device performance. First, transmission electron microscopy and electron energy loss spectroscopy (TEM-EELS) were used to analyze interfacial states at the semiconductor/oxide interface in wide bandgap SiC microelectronics. This interface contains defects that significantly diminish SiC device performance, and their fundamental nature remains generally unresolved. The impacts of various microfabrication techniques were explored, examining both current commercial and next-generation processing strategies. In further investigations, machine learning techniques were applied to the EELS data, revealing previously hidden Si, C, and O bonding states at the interface, which help explain the origins of mobility enhancement in SiC devices. Finally, the impacts of SiC bias temperature stressing on the interfacial region were explored. In the second system, focused ion beam/scanning electron microscopy (FIB/SEM) was used to reconstruct 3D models of solid oxide fuel cell (SOFC) cathodes. Since the specific degradation mechanisms of SOFC cathodes are poorly understood, FIB/SEM and TEM were used to analyze and quantify changes in the microstructure during performance degradation. Novel strategies for microstructure calculation from FIB-nanotomography data were developed and applied to LSM-YSZ and LSCF-GDC composite cathodes, aged with environmental contaminants to promote degradation. In LSM-YSZ, migration of both La and Mn cations to the grain boundaries of YSZ was observed using TEM-EELS. Few substantial changes however, were observed in the overall microstructure of the cells, correlating with a lack of performance degradation induced by the H2O. Using similar strategies, a series of LSCF-GDC cathodes were analyzed, aged in H2O, CO2, and Cr-vapor environments. FIB/SEM observation revealed considerable formation of secondary phases within these cathodes, and quantifiable modifications of the microstructure. In particular, Cr-poisoning was observed to cause substantial byproduct formation, which was correlated with drastic reductions in cell performance.

Wear mechanisms and scale effects in two-body abrasion

The ‘particle size effect’ and its manifestation in abrasion still attracts considerable debate as to its origins and the ranking of its likely causes. Experiments have been conducted to study the important contribution that the formation of wear debris can have on the progression of wear. The experiments consist of unlubricated (dry) pin-on-disk tests with silicon carbide coated paper of varying particle size, with different pin material, diameter and loads. It has been observed that the influence of debris formation on wear rate is more pronounced for fine abrasives and soft-wearing materials. Consequently, it is proposed that the particle size effect can be explained in terms of geometrical scaling and the evolution of third-body effects with diminishing particle diameter.

Growth of tin oxide single crystals in porcelain tunnel kilns

Single crystals of tin oxide have been grown under conditions obtained in oil fired porcelain tunnel kilns. It was noted that the reducing conditions in the kilns help in the growth of SnO2 crystals at much lower temperatures (1300°C). The growth seems to more pronounced in presence of silicon carbide. The crystals grow as long fibres of 0.1 to 0.5 mm dia. and 10 to 50 mm length. The crystals exhibit rutile structure and the direction of growth seems to be favoured in any one of the major axes a and c.

A simple triggered vacuum gap

A simple triggered vacuum gap has previously been described by the authors in this journal (see ibid., vol.5, 415, 1972). Further studies have resulted in improvement of the performance with regard to sensitivity and consistency of the trigger characteristics and immunity from bridging due to metal particles eroded from the arc. The earlier design suffered from rather frequent bridging of the auxiliary gap and showed rather wide scatter in its trigger characteristics. In the present design thermally stable materials like fused quartz, machinable ceramic 'Supramica 500' (Mycalex Corporation of America), lead titanate, barium titanate (LCC HTD) and silicon carbide have been used to insulate the trigger electrode from the cathode. Consistent triggerings free from bridging, at relatively low voltages of 200-400 V have been obtained.

Delay characteristics of a simple triggered vacuum gap

Firing delays of a simple triggered vacuum gap are reported in this paper. The effects of insulating materials in the auxiliary gap, auxiliary gap current, main gap current and electrode separation on the delay have been investigated. The presence of insulating material in the auxiliary gap having low auxiliary gap resistance appears to exhibit large delay. Delay decreases considerably with increase of current in the auxiliary and the main gaps, but it increases with increase of electrode separation. The scatter in the delay is less than 25 ps and 500 ps with supramica (Mycalex Corporation of America) and silicon carbide respectively at lower values of auxiliary gap current and it becomes negligible for supramica at auxiliary gap currents greater than 6A. This investigation appears to indicate that the simple device can be used as a fast switch.

Low-voltage and high-current delay characteristics of a simple triggered vacuum gap

Low-voltage and high-current switching delay characteristics of a simple triggered vacuum gap (TVG) are described using lead zirconate titanate as the dielectric material in the auxiliary gap. This TVG has superior performance at high currents (up to 14 kA was studied) with regard to delay, reliable firing and extended life as compared to the one using either supramica or silicon carbide. The total delay consists of three intervals: to break down the auxiliary gap, to propagate the trigger plasma and to break down the main gap. The data on the influence of the various parameters like the trigger voltage, current, energy and the main circuit energy are given. It has been found that the delay due to the first two intervals is small compared to the third.

Thermal properties and thermal shock resistance of γ-Y 2Si2O7

Thermal properties, namely, Debye temperature, thermal expansion coefficient, heat capacity, and thermal conductivity of γ-Y 2Si2O7, a high-temperature polymorph of yttrium disilicate, were investigated. The anisotropic thermal expansions of γ-Y2Si2O7 powders were examined using high-temperature X-ray diffractometer from 300 to 1373 K and the volumetric thermal expansion coefficient is (6.68±0.35) × 10-6 K-1. The linear thermal expansion coefficient of polycrystalline γ-Y2Si2O7 determined by push-rod dilatometer is (3.90±0.4) × 10-6 K-1, being very close to that of silicon nitride and silicon carbide. Besides, γ-Y2Si2O7 displays a low-thermal conductivity, with a κ value measured below 3.0 W·(m·K) -1 at the temperatures above 600 K. The calculated minimum thermal conductivity, κmin, was 1.35 W·(m·K) -1. The unique combination of low thermal expansion coefficient and low-thermal conductivity of γ-Y2Si2O7 renders it a very competitive candidate material for high temperature structural components and environmental/thermal-barrier coatings. The thermal shock resistance of γ-Y2Si2O7 was estimated by quenching dense materials in water from various temperatures and the critical temperature difference, ΔTc, was determined to be 300 K.

Processing map for hot working of powder

The constitutive flow behavior of a metal matrix composite (MMC) with 2124 aluminum containing 20 vol pct silicon carbide particulates under hot-working conditions in the temperature range of 300 °C to 550 °C and strain-rate range of 0.001 to 1 s-1 has been studied using hot compression testing. Processing maps depicting the variation of the efficiency of power dissipation given by [2m/(m + 1)] (wherem is the strain-rate sensitivity of flow stress) with temperature and strain rate have been established for the MMC as well as for the matrix material. The maps have been interpreted on the basis of the Dynamic Materials Model (DMM). [3] The MMC exhibited a domain of superplasticity in the temperature range of 450 °C to 550 °C and at strain rates less than 0.1 s-1. At 500 °C and 1 s-1 strain rate, the MMC undergoes dynamic recrystallization (DRX), resulting in a reconstitution of microstructure. In comparison with the map for the matrix material, the DRX domain occurred at a strain rate higher by three orders of magnitude. At temperatures lower than 400 °C, the MMC exhibited dynamic recovery, while at 550 °C and 1 s-1, cracking occurred at the prior particle boundaries (representing surfaces of the initial powder particles). The optimum temperature and strain-rate combination for billet conditioning of the MMC is 500 °C and 1 s-1, while secondary metalworking may be done in the super- plasticity domain. The MMC undergoes microstructural instability at temperatures lower than 400 °C and strain rates higher than 0.1 s-1.

The role of strain rate response in plane strain abrasion of metals

Titanium flats were scribed by silicon carbide wedges over ranges of temperatures and applied strains and with lubrication. The response of the material to scribing was noted by recording the coefficient of friction, the surface morphology of track and the subsurface deformation. Additional data were obtained from (1) uniaxial compression of titanium, (2) scribing of oxygen-free high conductivity copper and (3) scribing of aluminium under dry and lubricated conditions to analyse and explain the observed variation in response of titanium to scribing with strain, temperature and lubrication.

Low Voltage Firing Characteristics of a Simple Triggered Vacuum Gap

The firing characteristics of the simple triggered vacuum gap (TVG) using lead zirconate titanate as dielectric material in the triggered gap are described. This TVG has a long life of about 2000 firings without appreciable deterioration of the electrical properties for main discharge currents upto 3 kA and is much superior to these made with Supramica (Mycalex Corporation of America) and silicon carbide as used in our earlier investigations. The effects of the variation of trigger voltage, trigger curcit, trigger pulse duration, trigger pulse energy, main gap voltage, main gap separation and main circuit energy on the firing characteristics have been studied. Trigger resistance progressively decreases with the number of firings of the trigger gap and as well as of the main gap. This decrease in the trigger resistance is more pronounced for main discharge currents exceeding 10 kA. The minimum trigger current required for reliable firing decreases with increase of trigger voltage upto a threshold value of 1.2 kV and there-onwards saturates at 3.0 A. This value is less than that obtained with Supramica as dielectric material. One hundred percent firing probability of the TVG at main gap voltages as low as 50 V is possible and this low voltage breakdown of the main gap appears to be similar to the breakdown at low pressures between moving plasma by other workers. and the cold electrodes immersed in it, as reported.

Dynamic properties and asymmetry of tension and compression of metal matrix composites under impact loading

The mechanical behaviors of 2124, Al-5Cu, Al-Li and 6061 alloys reinforced by silicon carbide particulates, together with 15%SiCw/6061 alloy, were studied under the quasi-static and impact loading conditions, using the split Hopkinson tension/compression bars and Instron universal testing machine. The effect of strain rate on the ultra tensile strength (UTS), the hardening modulus and the failure strain was investigated. At the same time, the SEM observations of dynamic fracture surfaces of various MMC materials showed some distinguished microstructures and patterns. Some new characteristics of asymmetry of mechanical behaviors of MMCs under tension and compression loading were also presented and explained in details, and they could be considered as marks to indicate, to some degree, the mechanism of controlling damage and failure of MMCs under impact loading. The development of new constitutive laws about MMCs under impact loading should benefit from these experimental results and theoretical analysis.