Open loop Model for WDM Links

Wavelength Division Multiplexing (WDM) techniques overfibrelinks helps to exploit the high bandwidth capacity of single mode fibres. A typical WDM link consisting of laser source, multiplexer/demultiplexer, amplifier and detectoris considered for obtaining the open loop gain model of the link. The methodology used here is to obtain individual component models using mathematical and different curve fitting techniques. These individual models are then combined to obtain the WDM link model. The objective is to deduce a single variable model for the WDM link in terms of input current to system. Thus it provides a black box solution for a link. The Root Mean Square Error (RMSE) associated with each of the approximated models is given for comparison. This will help the designer to select the suitable WDM link model during a complex link design.

Pattern formation and spatial solitons in bistable liquid-crystal microcavities

We report on spatial pattern formation, and appearances of 'optical bullet holes' in single-mode microcavities that are filled with liquid-crystals, when pumped above the cavity resonance frequency. These phenomena only occur beyond the bistability threshold. ©2002 Optical Society of America.

Mechanisms of femtosecond laser-induced breakdown and damage in MgO

Single-shot laser damage threshold of MgO for 40-986 fs, 800 nm laser pulses is reported. The pump-probe measurements with femtosecond pulses were carried out to investigate the time-resolved electronic excitation processes. A theoretical model including conduction band electrons (CBE) production and laser energy deposition was applied to discuss the roles of multiphoton ionization (MPI) and avalanche ionization in femtosecond laser-induced dielectric breakdown. The results indicate that avalanche ionization plays the dominant role in the femtosecond laser-induced breakdown in MgO near the damage threshold. (c) 2005 Elsevier B.V. All rights reserved.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

矩阵理论在半导体激光器耦合中的应用

傍轴近似下的光学矩阵理论，可以简化光束传输计算过程，使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中，运用高斯光束的ABCD法则，详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计；另一方面，对系统的耦合损耗与耦合距离的关系进行了理论计算，并把计算结果与最近的实验报道做了比较，它们基本相吻合，说明此方法是可行的、合理的。从整个设计及理论计算来看，ABCD矩阵方法减少了复杂的计算，从而简化了设计过程，与通常的衍射计算相比，它不失为一种方便、有效的方法，同时它对生产半导体

一种新型结构的单纵模光纤激光器

单纵模掺铒光纤激光器在光通信和光传感等方面有着广泛的应用前景。设计了一种新型的光纤激光器，在光纤环形镜中嵌入未抽运的掺铒光纤作为可饱和吸收体以抑制多纵模，用光纤环谐振腔作为滤波器抑制拍频噪声，用光纤光栅作为波长选择器件，最终得到了单纵模输出并消除了拍频噪声。使用零拍法测量其线宽小于频谱仪的低频极限5kHz。实验结果证明了可饱和吸收体和光纤环的功能。

室温下稳定的多波长掺铒光纤激光器的研究

通过在线形谐振腔中引入一段缠绕在压电陶瓷上的单模光纤作为正弦相位调制器，使得激射波长的损耗不固定，抑制由于掺铒光纤的均匀展宽效应引起的模式竞争，从而避免了在室温下不稳定的单波长激射，实现了多波长掺铒光纤激光器的稳定输出。为了获得平坦的多波长输出，在谐振腔里使用了一个损耗峰位于1530nm处的长周期光纤光栅，以获得较为平坦的增益谱。通过两个3dB耦合器制成的反射型梳状滤波器的滤波作用，实验中观察到稳定的多波长激射，相邻波长间隔约为0．45nm。中心9个波长的输出功率平坦度为10dB，边模抑制比大于25dB。

Approximate analytical description for fundamental-mode fields of graded-index fibers: Beyond the Gaussian approximation

An approximate analytical description for fundamental-mode fields of graded-index fibers is explicitly presented by use of the power-series expansion method, the maximum-value condition at the fiber axis, the decay properties of fundamental-mode fields at large distance from the fiber axis, and the approximate modal parameters U obtained from the Gaussian approximation. This analytical description is much more accurate than the Gaussian approximation and at the same time keep the simplicity of the latter. As two special examples, we present the approximate analytical formulas for the fundamental-mode fields of a step profile fiber and a Gaussian profile fiber, and we find that they are both highly accurate in the single-mode range by comparing them with the corresponding exact solutions.

Construction of the refractive index profiles for few-mode planar optical waveguides

We present a nondestructive technique to predict the refractive index profiles of isotropic planar waveguides, on which a thin gold film is deposited to as the cladding. The negative dielectric constant of the metal results in significant differences of effective indices between TE and TM modes. The two polarized modes and a surface plasmon resonance (SPR) with abundant information of the surface index can be used to construct the refractive index profiles of single-mode and two-mode waveguides at a fixed wavelength. (c) 2005 Elsevier B.V. All rights reserved.

Core size scaling of helical-core optical fibres

The mode-area, scaling properties of helical-core optical fibres are numerically studied and the limit of core size for achievable single-mode operation is explored. By appropriate design, helical-core fibres can operate in a single mode with possible scaling up to 300 mu m in core diameter with numerical aperture 0.1.

基于光纤环形镜的全光脉冲整形器

提出了一种基于光纤环形镜的全光脉冲整形器。该全光脉冲整形器利用波分复用器将控制光脉冲引入光纤环形镜中，控制光脉冲由于交叉相位调制在信号光上产生了非线性附加相移。信号光在耦合器中发生干涉，经过整形的信号光脉冲从脉冲整形器的出射端出射，信号脉冲的波形由非线性附加相移的波形决定。实验中．利用对控制脉冲光谱整形和啁啾展宽的方法来对控制脉冲进行时间脉冲的整形，该全光脉冲整形器实现了对单纵模激光的脉冲整形，同时实现了飞秒脉冲和单纵模整形脉冲的精确同步。在理论上数值计算了该全光脉冲整形器的输出特性，理论计算结果和实验结

一种制作掺Yb相移光纤光栅激光器的实验方案

采用遮挡法引入相移制作了掺Yb相移光纤光栅(PS-FBG)。在制作光栅的过程中,将其作为激光器的谐振腔,通过监测激光器的输出功率来确定相移大小。当激光器的输出功率开始下降时,停止曝光,此时引入的相移为π/2。为了使光栅的特性尽快稳定下来需要对光栅进行退火,这将导致引入的相移小于π/2。为了弥补退火过程中引起的相移降低,需要对退火后的光栅进行二次曝光,以使光栅的相移恢复π/2。利用该方法制作了一只光纤光栅激光器。当抽运功率为100 mW时,获得了25 mW的输出功率,信噪比(SNR)为60 dB。在1 h内

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

7.3 W国产单频光纤放大器

报道了一种MOPA式国产单频光纤放大器。该放大器采用连续波单频激光器作为主振荡器，采用我国自行设计和制造的大模场面积掺Yb双包层光纤作为功率放大器，在波长1064 nm处实现了最高7.3 W的连续激光输出，斜率效率为39%，光－光转换效率为26%。此外，对光谱特性及放大的自发发射的抑制也进行了探讨。

大模场面积光纤激光器拉锥法模式选择

大模场面积(LMA)光纤激光器的光束质量通常比单模光纤激光器的光束质量差。采用光纤拉锥的方法进行模式选择,从而提高大模场直径光纤激光器的光束质量。拉锥区距光纤激光器的输出端约5 mm,纤芯最小为9 μm,约为未拉锥部分纤芯直径26 μm的1/3。实验研究表明,在拉锥后,光纤激光器的光束质量因子M2由3.50减小为1.81,相应的斜率效率由63.6%减小为51.1%。虽然拉锥后最大输出功率减少了约19.8%,但其亮度增大为拉锥前的3倍。