Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror

利用金属有机气相淀积方法生长了一种新型吸收体:高反射率半导体可饱和吸收镜.用这种吸收体兼作端镜,实现了1.044μm半导体端面泵浦Yb∶YAB激光器被动锁模,脉冲宽度为3.05ps,重复率为375MHz,输出功率为45mW.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

Validation of a parabolic trough solar receiver model based on physical formulation of the absorber total emissivity from its spectral emissivity

Concentrating solar power is an important way of providing renewable energy. Model simulation approaches play a fundamental role in the development of this technology and, for this, an accurately validation of the models is crucial. This work presents the validation of the heat loss model of the absorber tube of a parabolic trough plant by comparing the model heat loss estimates with real measurements in a specialized testing laboratory. The study focuses on the implementation in the model of a physical-meaningful and widely valid formulation of the absorber total emissivity depending on the surface’s temperature. For this purpose, the spectral emissivity of several absorber’s samples are measured and, with these data, the absorber total emissivity curve is obtained according to Planck function. This physical-meaningful formulation is used as input parameter in the heat loss model and a successful validation of the model is performed. Since measuring the spectral emissivity of the absorber surface may be complex and it is sample-destructive, a new methodology for the absorber’s emissivity characterization is proposed. This methodology provides an estimation of the absorber total emissivity, retaining its physical meaning and widely valid formulation according to Planck function with no need for direct spectral measurements. This proposed method is also successfully validated and the results are shown in the present paper.

Ultra-thin tunable microwave absorber using liquid crystals

A dynamically adaptive radar absorber is described which is based on a periodic array of microstrip patches that are printed on a 500 mu m-thick liquid crystal substrate. The measured reflectivity of the structure is less than -38 dB with a 200 MHz -10 dB bandwidth at 10.19 GHz when a +4 DC bias is applied. It is shown that a 34 dB reduction in signal loss occurs when the bias voltage is increased to 20 V.

EFFECT OF SURFACE RESISTOR LOADING ON HIGH-IMPEDANCE SURFACE RADAR ABSORBER RETURN LOSS AND BANDWIDTH

A simple method for the selection of the appropriate choice of surface-mounted loading resistor required for a thin radar absorber based on a high-impedance surface (HIS) principle is demonstrated. The absorber consists of a HIS, (artificial magnetic ground plane), thickness 0.03 lambda(0) surface-loaded resistive-elements interconnecting a textured surface of square patches. The properties of absorber are characterized under normal incident using a parallel plate waveguide measurement technique over the operating frequency range of 2.6-3.95 GHz. We show that for this arrangement return loss and bandwidth are insensitive to +/- 2% tolerance variations in surface resistor values about the value predicted using the method elaborated in this letter, and that better than -28 dB at 3.125 GHz reflection loss can be obtained with an effective working bandwidth of up to 11% at -10 dB reflection loss. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1733-1775, 2009; Published online in Wiley Interscience (www.interscience.wiley.com). DOI 10.1002/mop.24454

Design of a salisbury screen absorber using frequency selective surfaces to improve bandwidth and angular stability performance

A new design method that greatly enhances the reflectivity bandwidth and angular stability beyond what is possible with a simple Salisbury screen is described. The performance improvement is obtained from a frequency selective surface (FSS) which is sandwiched between the outermost 377 Ω/square resistive sheet and the ground plane. This is designed to generate additional reflection nulls at two predetermined frequencies by selecting the size of the two unequal length printed dipoles in each unit cell. A multiband Salisbury screen is realised by adjusting the reflection phase of the FSS to position one null above and the other below the inherent absorption band of the structure. Alternatively by incorporating resistive elements midway on the dipoles, it is shown that the three absorption bands can be merged to create a structure with a −10 dB reflectivity bandwidth which is 52% larger and relatively insensitive to incident angle compared to a classical Salisbury screen having the same thickness. CST Microwave Studio was used to optimise the reflectivity performance and simulate the radar backscatter from the structure. The numerical results are shown to be in close agreement with bistatic measurements for incident angles up to 40° over the frequency range 5.4−18 GHz.

Loading Artificial Magnetic Conductor and Artificial Magnetic Conductor Absorber with Negative Impedance Convertor Elements

The general properties of a frequency selective surface loaded with negative impedance converter (NIC)-based active loads are discussed from a theoretical perspective.The stability problem associated with NIC circuits embedded in artificial magnetic conductor (AMC) and AMC absorber applications is studied using pole-zero analysis. The requirements and constraints for achieving stable operation with enhanced bandwidth using negative capacitance as realized by a floating NIC network are derived. Furthermore, it is shown that it is nearly impossible to simultaneously implement a negative capacitor and a negative inductor to such structures. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2111–2114, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27019

Polarisation independent resistively loaded frequency selective surface absorber with optimum oblique incidence performance

This study presents the design of a thin electromagnetic absorber which exhibits radar backscatter suppression that is independent of the wave polarisation at large incidence angles. The structure consists of a metal backed printed frequency selective surface (FSS), with resistors placed across narrow gaps inserted in the middle of each of the four sides of the conductor loops. The geometry of the periodic array and the value of the vertical and horizontal resistor pairs are carefully chosen to present a real impedance of 377 Ω at the centre operating frequency for both TE and TM polarised waves. Angular sensitivity and reflectivity bandwidth have been investigated for FSS absorber designs with thicknesses of 1, 2 and 3 mm. Each of the three structures was optimised to work at a centre frequency of 10 GHz and an incident angle of 45°. The design methodology is verified by measuring the radar backscatter suppression from a 3 mm (l / 10) thick screen in the frequency range 8–12 GHz. The absorber construction was simplified by filling the four metal gaps in each unit cell with shielding paint, and selecting the ink thickness to give the two required surface resistance values.