A novel terbium (III) beta-diketonate complex as thin film for optical device application

A novel terbium complex, Tb(acac)(3)AAP (acac: acetylacetone, AAP: 4-amino-antipyrine), was synthesized and its luminescent properties were studied. When it was used as an emitting center, triple-layer-type device with a structure of glass substrate/ITO (indium-tin oxide)/TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine)./Tb(acac)(3)AAP/PBD (2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole) or Alq(3) (tris(8-hydroxyquinolinato) aluminum)/Al (aluminum) exhibited bright characteristic emission of terbium ion upon applying d.c. voltage. The maximum luminance of the device is 56 cd/m(2) at 19 V and the maximum luminance efficiency is 0.357 lm/W.

Amperometric biosensor for hydrogen peroxide based on sol-gel/hydrogel composite thin film

A reagentless amperometric hydrogen peroxide biosensor was developed. Horseradish peroxidase (HRP) was immobilized in a novel sol-gel organic-inorganic hybrid matrix that is composed of silica sol and a grafting copolymer of poly(vinyl alcohol) with 4-vinylpyridine (PVA-g-PVP). Tetrathiafulvalene (TTF) was employed as a mediator and could lower the operating potential to -50 mV (versus Ag/AgCl). The sensor achieved 95% of the steady-state current in 15 s. Linear calibration for hydrogen peroxide was up to 1.3 mM with the detection limit of 2.5 x 10(-7)M. The enzyme electrode retained about 94% of its initial activity after 30 days of storage in a dry state at 4 degreesC.

Plasma Polymerised Organic Thin Films-A Study on the Structural, Electrical and Nonlinear Optical Properties for Possible Applications

This proposed thesis is entitled “Plasma Polymerised Organic Thin Films: A study on the Structural, Electrical, and Nonlinear Optical Properties for Possible Applications. Polymers and polymer based materials find enormous applications in the realm of electronics and optoelectronics. They are employed as both active and passive components in making various devices. Enormous research activities are going on in this area for the last three decades or so, and many useful contributions are made quite accidentally. Conducting polymers is such a discovery, and eversince the discovery of conducting polyacetylene, a new branch of science itself has emerged in the form of synthetic metals. Conducting polymers are useful materials for many applications like polymer displays, high density data storage, polymer FETs, polymer LEDs, photo voltaic devices and electrochemical cells. With the emergence of molecular electronics and its potential in finding useful applications, organic thin films are receiving an unusual attention by scientists and engineers alike. This is evident from the vast literature pertaining to this field appearing in various journals. Recently, computer aided design of organic molecules have added further impetus to the ongoing research activities in this area. Polymers, especially, conducting polymers can be prepared both in the bulk and in the thinfilm form. However, many applications necessitate that they are grown in the thin film form either as free standing or on appropriate substrates. As far as their bulk counterparts are concerned, they can be prepared by various polymerisation techniques such as chemical routes and electrochemical means. A survey of the literature reveals that polymers like polyaniline, polypyrrole, polythiophene, have been investigated with a view to studying their structural electrical and optical properties. Among the various alternate techniques employed for the preparation of polymer thin films, the method of plasma polymerisation needs special attention in this context. The technique of plasma polymerisation is an inexpensive method and often requires very less infra structure. This method includes the employment of ac, rf, dc, microwave and pulsed sources. They produce pinhole free homogeneous films on appropriate substrates under controlled conditions. In conventional plasma polymerisation set up, the monomer is fed into an evacuated chamber and an ac/rf/dc/ w/pulsed discharge is created which enables the monomer species to dissociate, leading to the formation of polymer thin films. However, it has been found that the structure and hence the properties exhibited by plasma polymerized thin films are quite different from that of their counterparts produced by other thin film preparation techniques such as electrochemical deposition or spin coating. The properties of these thin films can be tuned only if the interrelationship between the structure and other properties are understood from a fundamental point of view. So very often, a through evaluation of the various properties is a pre-requisite for tailoring the properties of the thin films for applications. It has been found that conjugation is a necessary condition for enhancing the conductivity of polymer thin films. RF technique of plasma polymerisation is an excellent tool to induce conjugation and this modifies the electrical properties too. Both oxidative and reductive doping can be employed to modify the electrical properties of the polymer thin films for various applications. This is where organic thin films based on polymers scored over inorganic thin films, where in large area devices can be fabricated with organic semiconductors which is difficult to achieve by inorganic materials. For such applications, a variety of polymers have been synthesized such as polyaniline, polythiophene, polypyrrole etc. There are newer polymers added to this family every now and then. There are many virgin areas where plasma polymers are yet to make a foray namely low-k dielectrics or as potential nonlinear optical materials such as optical limiters. There are also many materials which are not been prepared by the method of plasma polymerisation. Some of the materials which are not been dealt with are phenyl hydrazine and tea tree oil. The advantage of employing organic extracts like tea tree oil monomers as precursors for making plasma polymers is that there can be value addition to the already existing uses and possibility exists in converting them to electronic grade materials, especially semiconductors and optically active materials for photonic applications. One of the major motivations of this study is to synthesize plasma polymer thin films based on aniline, phenyl hydrazine, pyrrole, tea tree oil and eucalyptus oil by employing both rf and ac plasma polymerisation techniques. This will be carried out with the objective of growing thin films on various substrates such as glass, quartz and indium tin oxide (ITO) coated glass. There are various properties namely structural, electrical, dielectric permittivity, nonlinear optical properties which are to be evaluated to establish the relationship with the structure and the other properties. Special emphasis will be laid in evaluating the optical parameters like refractive index (n), extinction coefficient (k), the real and imaginary components of dielectric constant and the optical transition energies of the polymer thin films from the spectroscopic ellipsometric studies. Apart from evaluating these physical constants, it is also possible to predict whether a material exhibit nonlinear optical properties by ellipsometric investigations. So further studies using open aperture z-scan technique in order to evaluate the nonlinear optical properties of a few selected samples which are potential nonlinear optical materials is another objective of the present study. It will be another endeavour to offer an appropriate explanation for the nonlinear optical properties displayed by these films. Doping of plasma polymers is found to modify both the electrical conductivity and optical properties. Iodine is found to modify the properties of the polymer thin films. However insitu iodine doping is tricky and the film often looses its stability because of the escape of iodine. An appropriate insitu technique of doping will be developed to dope iodine in to the plasma polymerized thin films. Doping of polymer thin films with iodine results in improved and modified optical and electrical properties. However it requires tools like FTIR and UV-Vis-NIR spectroscopy to elucidate the structural and optical modifications imparted to the polymer films. This will be attempted here to establish the role of iodine in the modification of the properties exhibited by the films

Model Calculations and Implementation of Filters and Hybrid Green VCSELs based on Optical Thin Film Stacks

This work introduced the novel conception of complex coupled hybrid VCSELs for the first time. Alternating organic and inorganic layers in the lasers provide periodic variation of refractive index and optical gain, which enable single mode operation and low threshold of the VCSELs. Model calculations revealed great reduction of the lasing threshold with factors over 30, in comparison with the existing micro-cavity lasers. Tunable green VCSEL has been also designed, implemented and analyzed taking advantage of the broad photoluminescence spectra of the organics. Free standing optical thin films without compressive stress are technologically implemented. Multiple membrane stacks with air gap in between have been fabricated for the implementation of complex coupled VCSEL structures. Complex coupled hybrid VCSEL is a very promising approach to fill the gaps in the green spectral range of the semiconductor lasers.

Nanostructured copper thin film used for catalysis

Catalytic properties of copper thin films deposited in small channels and cavities were tested using Raman microscopy and mass spectroscopy (MS) techniques, mainly. The catalytic surface conditions were addressed visually and chemically by optical microscopy and X-ray photoelectron spectroscopy (XPS), respectively. The experimental conditions of present work induced copper oxidation; eventually a number of carbon species and graphite remained on the catalytic surface. Quartz crystal microbalance and mass spectroscopy data support both adsorption and catalysis phenomena. MS showed CO2 formation during n-hexane heating process but not to 2-propanol, probably due to redox reactions. XPS of copper surface present in the cavity after catalysis tests detected Cu2O and a range of possible carbon species. The adsorption and catalytic performance of copper films deposited in cavities and microchannels were quite similar. A simple miniaturized device for microanalysis was proposed. (C) 2007 Elsevier B.V. All rights reserved.

Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Nanoporous of W/WO3 Thin Film Electrode Grown by Electrochemical Anodization Applied in the Photoelectrocatalytic Oxidation of the Basic Red 51 used in Hair Dye

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Tetraethylortossilicate plasma thin film with hydrophilic and hydrophobic characteristics: Use on passive mixers

This work aims to obtain plasma thin film composites with hydrophobic/hydrophilic alternated regions, which are useful for the production of miniaturized mixers. These regions were acquired by two different strategies: either the codeposition of TEOS and HFE plasma thin films or the exposition of TEOS plasma films to ultraviolet radiation (UVA and UVC). These films were characterized by several chemical and physical techniques. The refractive indexes vary from 1.4 to 1.7; infrared and photoelectron spectroscopy detect Si-O-Si and CHn species. Silicone-like structures with high or low number of amorphous carbon microparticles and with fluorinated organic clusters were produced. Cluster dimensions were in the 1-5 mm range and they are made of graphite or COF (carbon/oxygen/fluorine) compounds. Scanning electron and optical microscopy showed rough surfaces. Water contact angles were 90º; however, for TEOS films that value changed after 6 hr of UVC exposure. Moreover, after UV exposure, organic polar compounds could be adsorbed in those films and water was not. The passive mixer performance was simulated using the FemLab 3.2® program and was tested with 20 nm thick films on a silicon wafer, showing the capacity of these films to be used in such devices.

Composite Thin Film Obtained Using Tetraethoxysilane and Aimed at VOCs Detection

The aim of this work was production of tetraethoxysilane (TEOS) plasma polymerized thin films and optimization of their physical-chemical characteristic for sensor development. The films were analyzed using several techniques. It was possible to produce composites (graphite clusters imbibed by silicon oxide film) made from only one reactant (TEOS). Deposition rate can vary significantly, reaching a maximum of 30 nm/min; cluster formation and their size widely depending on deposition parameters. The film surface was hydrophobic but can be wetted by organic compounds, probably due to carbon radicals. These films are good candidates for sensor development.

Organic light emitting diodes with europium (III) emissive layers based on beta-diketonate complexes: The influence of the central ligand

This work shows a comparative study of organic light emitting diodes based on four different europium complexes with the general formula, Eu(CLs)(3)bipyridine, where the central ligands are DBM [tris(dibenzoylmethane)], TTA [tris(1-(2-thieneyl)-4,4,4-trifluoro-1,3-butanedione)], NTA [tris(1-(2-naphthoyl)-3,3,3-trifluoroacetone)] and BTA [tris(1-(2-benzoyl)-3,3,3-trifluoroacetone)]. All devices have a driving voltage of 14-16 V, a very low electrical current at normal operation (less than 1 mA) and a good Wall Plug Efficiency (up to near 10(-3)%). The most suitable central ligand was found to be DBM, with an optical power up to 200 nW (at 612 nm). The BTA exhibits the lowest stability under high applied voltages. The other central ligands have similar results among them. The electroluminescence spectra clearly show the europium ion transitions (with a strong (5)D(0) -> (7)F(2) line) with a CIE color coordinate around (0.56, 0.34). (C) 2008 Elsevier B.V. All rights reserved.

Ion implantation of organic thin films and electronic devices

Organic semiconductors have great promise in the field of electronics due to their low cost in term of fabrication on large areas and their versatility to new devices, for these reasons they are becoming a great chance in the actual technologic scenery. Some of the most important open issues related to these materials are the effects of surfaces and interfaces between semiconductor and metals, the changes caused by different deposition methods and temperature, the difficulty related to the charge transport modeling and finally a fast aging with time, bias, air and light, that can change the properties very easily. In order to find out some important features of organic semiconductors I fabricated Organic Field Effect Transistors (OFETs), using them as characterization tools. The focus of my research is to investigate the effects of ion implantation on organic semiconductors and on OFETs. Ion implantation is a technique widely used on inorganic semiconductors to modify their electrical properties through the controlled introduction of foreign atomic species in the semiconductor matrix. I pointed my attention on three major novel and interesting effects, that I observed for the first time following ion implantation of OFETs: 1) modification of the electrical conductivity; 2) introduction of stable charged species, electrically active with organic thin films; 3) stabilization of transport parameters (mobility and threshold voltage). I examined 3 different semiconductors: Pentacene, a small molecule constituted by 5 aromatic rings, Pentacene-TIPS, a more complex by-product of the first one, and finally an organic material called Pedot PSS, that belongs to the branch of the conductive polymers. My research started with the analysis of ion implantation of Pentacene films and Pentacene OFETs. Then, I studied totally inkjet printed OFETs made of Pentacene-TIPS or PEDOT-PSS, and the research will continue with the ion implantation on these promising organic devices.

Electrical spectroscopy of rubrene bulk and thin film crystals

One of the most diffused electronic device is the field effect transistor (FET), contained in number of billions in each electronic device. Organic optoelectronics is an emerging field that exploits the unique properties of conjugated organic materials to develop new applications that require a combination of performance, low cost and processability. Organic single crystals are the material with best performances and purity among the variety of different form of organic semiconductors. This thesis is focused on electrical and optical characterization of Rubrene single crystal bulk and thin films. Rubrene bulk is well known but for the first time we studied thin films. The first Current-voltage characterization has been performed for the first time on three Rubrene thin films with three different thickness to extract the charge carriers mobility and to assess its crystalline structure. As results we see that mobility increase with thickness. Field effect transistor based on Rubrene thin films on $SiO_2$ have been characterize by current-voltage (I-V) analyses (at several temperatures) and reveals a hopping conduction. Hopping behavior probably is due to the lattice mismatch with the substrate or intrinsic defectivity of the thin films. To understand effects of contact resistance we tested thin films with the Transmission Line Method (TLM) method. The TLM method revealeds that contact resistance is negligible but evidenced a Schottky behavior in a limited but well determined range of T. To avoid this effect we carried out annealing treatment after the electrode evaporation iswe performed a compete I-V characterization as a function of in temperature to extract the electronic density of states (DOS) distribution through the Space Charge Limited Current (SCLC) method. The results show a DOS with an exponential trenddistribution, as expected. The measured mobility of thin films is about 0.1cm^2/Vs and it increases with the film thickness. Further studies are necessary to investigate the reason and improve performances. From photocurrent spectrum we calculated an Eg of about 2.2eV and both thin films and bulk have a good crystal order. Further measurement are necessary to solve some open problems

In-situ detection of defect formation in organic flexible electronics by Kelvin Probe Force Microscopy

Organic semiconductor technology has attracted considerable research interest in view of its great promise for large area, lightweight, and flexible electronics applications. Owing to their advantages in processing and unique physical properties, organic semiconductors can bring exciting new opportunities for broad-impact applications requiring large area coverage, mechanical flexibility, low-temperature processing, and low cost. In order to achieve highly flexible device architecture it is crucial to understand on a microscopic scale how mechanical deformation affects the electrical performance of organic thin film devices. Towards this aim, I established in this thesis the experimental technique of Kelvin Probe Force Microscopy (KPFM) as a tool to investigate the morphology and the surface potential of organic semiconducting thin films under mechanical strain. KPFM has been employed to investigate the strain response of two different Organic Thin Film Transistor with active layer made by 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-Pentacene), and Poly(3-hexylthiophene-2,5-diyl) (P3HT). The results show that this technique allows to investigate on a microscopic scale failure of flexible TFT with this kind of materials during bending. I find that the abrupt reduction of TIPS-pentacene device performance at critical bending radii is related to the formation of nano-cracks in the microcrystal morphology, easily identified due to the abrupt variation in surface potential caused by local increase in resistance. Numerical simulation of the bending mechanics of the transistor structure further identifies the mechanical strain exerted on the TIPS-pentacene micro-crystals as the fundamental origin of fracture. Instead for P3HT based transistors no significant reduction in electrical performance is observed during bending. This finding is attributed to the amorphous nature of the polymer giving rise to an elastic response without the occurrence of crack formation.

Oxide Semiconductors For Organic Opto-electronic Devices

Development of transparent oxide semiconductors (TOS) from Earth-abundant materials is of great interest for cost-effective thin film device applications, such as solar cells, light emitting diodes (LEDs), touch-sensitive displays, electronic paper, and transparent thin film transistors. The need of inexpensive or high performance electrode might be even greater for organic photovoltaic (OPV), with the goal to harvest renewable energy with inexpensive, lightweight, and cost competitive materials. The natural abundance of zinc and the wide bandgap ($sim$3.3 eV) of its oxide make it an ideal candidate. In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than 90 %. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. With recent rapid development of bulk-heterojunction organic photovoltaics active materials, devices employing ZnO and ZnO based electrode provide air stable and cost-competitive alternatives to traditional inorganic photovoltaics. The organic light emitting diodes (OLEDs) have already been commercialized, thus to follow in the footsteps of this technology, OPV devices need further improvement in power conversion efficiency and stable materials resulting in long device lifetimes. Use of low work function metals such as Ca/Al in standard geometry do provide good electrode for electron collection, but serious problems using low work-function metal electrodes originates from the formation of non-conductive metal oxide due to oxidation resulting in rapid device failure. Hence, using low work-function, air stable, conductive metal oxides such as ZnO as electrons collecting electrode and high work-function, air stable metals such as silver for harvesting holes, has been on the rise. Devices with degenerately doped ZnO functioning as transparent conductive electrode, or as charge selective layer in a polymer/fullerene based heterojunction, present useful device structures for investigating the functional mechanisms within OPV devices and a possible pathway towards improved air-stable high efficiency devices. Furthermore, analysis of the physical properties of the ZnO layers with varying thickness, crystallographic structure, surface chemistry and grain size deposited via various techniques such as atomic layer deposition, sputtering and solution-processed ZnO with their respective OPV device performance is discussed. We find similarity and differences in electrode property for good charge injection in OLEDs and good charge collection in OPV devices very insightful in understanding physics behind device failures and successes. In general, self-passivating surface of amorphous TCOs IZO, ZTO and IZTO forms insulating layer that hinders the charge collection. Similarly, we find modulation of the carrier concentration and the mobility in electron transport layer, namely zinc oxide thin films, very important for optimizing device performance.

Improving the photoactivity of bismuth vanadate thin film photoanodes through doping and surface modification strategies

Currently, one of the most attractive and desirable ways to solve the energy challenge is harvesting energy directly from the sunlight through the so-called artificial photosynthesis. Among the ternary oxides based on earth–abundant metals, bismuth vanadate has recently emerged as a promising photoanode. Herein, BiVO4 thin film photoanodes have been successfully synthesized by a modified metal-organic precursor decomposition method, followed by an annealing treatment. In an attempt to improve the photocatalytic properties of this semiconductor material for photoelectrochemical water oxidation, the electrodes have been modified (i) by doping with La and Ce (by modifying the composition of the BiVO4 precursor solution with the desired concentration of the doping element), and (ii) by surface modification with Au nanoparticles potentiostatically electrodeposited. La and Ce doping at concentrations of 1 and 2 at% in the BiVO4 precursor solution, respectively, enhances significantly the photoelectrocatalytic performance of BiVO4 without introducing important changes in either the material structure or the electrode morphology, according to XRD and SEM characterization. In addition, surface modification of the electrodes with Au nanoparticles further enhances the photocurrent as such metallic nanoparticles act as co-catalysts, promoting charge transfer at the semiconductor/solution interface. The combination of these two complementary ways of modifying the electrodes has resulted in a significant increase in the photoresponse, facilitating their potential application in artificial photosynthesis devices.