Operator, organizational, and direct support maintenance manual : service unit, refrigeration system (MUST), (Ameritech Corporation model 1200-F-0001), NSN 4130-01-039-8124.

"19 January 1979."

Qingshu shi chao chu ke : 4 juan, fu Qingshu du shi za gan : 4 juan /

Double leaves, oriental style, in case.

Sefer ha-gan ṿe-Derekh Mosheh : kolel dinim yesharim hanhagot ṭovot ṿe-tokhaḥat musar neḥlakim li-sheloshim yeme ha-ḥodesh devar yom be-yomo = Sefer Gagon v'derekh Moĭshe, t.e., Ogorod i putʹ Moĭsei͡a.

"Sefer ha-gan ḥiber ha-gaʼon Yitsḥaḳ zal ṿe-Sefer Derekh Mosheh ḥiber ha-darshan ... Mosheh beha-rav ... Maharam ha-Kohen ...".

Bidrag till frågan om fotografisk fotometri.

Akademisk afhandling--Upsala.

Lattice damage produced in GaN by swift heavy ions

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.

The role of Ti as a catalyst for the dissociation of hydrogen on a Mg(0001) surface

In this paper, the dissociative chemisorption of hydrogen on both pure and Ti-incorporated Mg(0001) surfaces are studied by ab initio density functional theory (DFT) calculations. The calculated dissociation barrier of hydrogen molecule on a pure Mg(0001) surface (1.05 eV) is in good agreement with comparable theoretical studies. For the Ti-incorporated Mg(0001) surface, the activated barrier decreases to 0.103 eV due to the strong interaction between the molecular orbital of hydrogen and the d metal state of Ti. This could explain the experimentally observed improvement in absorption kinetics of hydrogen when transition metals have been introduced into the magnesium materials.

Rifampicin and sodium fusidate reduces the frequency of methicillin-resistant Staphylococcus aureus (MRSA) isolation in adults with cystic fibrosis and chronic MRSA infection

Nosocomial transmission of methicillin-resistant Staphylococcus aureus (MRSA) to patients with cystic fibrosis (CF) frequently results in chronic respiratory tract carriage. This is an increasing problem, adds to the burden of glycopeptide antibiotic use in hospitals, and represents a relative contraindication to lung transplantation. The aim of this study was to determine whether it is possible to eradicate MRSA with prolonged oral combination antibiotics, and whether this treatment is associated with improved clinical status. Adult CF patients (six mate, one female) with chronic MRSA infection were treated for six months with rifampicin and sodium fusidate. Outcome data were examined for six months before treatment, on treatment and after treatment. The patients had a mean age of 29.3 (standard deviation = 6.3) years and FEV1 of 36.1% (standard deviation = 12.7) predicted. The mean duration of MRSA isolation was 31 months. MRSA isolates identified in these patients was of the same lineage as the known endemic strain at the hospital when assessed by pulsed-field get electrophoresis. Five of the seven had no evidence of MRSA during and for at [east six months after rifampicin and sodium fusidate. The proportion of sputum samples positive for MRSA was lower during the six months of treatment (0.13) and after treatment (0.19) compared with before treatment (0.85) (P < 0.0001). There was a reduction in the number of days of intravenous antibiotics per six months with 20.3 +/- 17.6 on treatment compared with 50.7 before treatment and 33.0 after treatment (P = 0.02). There was no change in lung function. Gastrointestinal side effects occurred in three, but led to therapy cessation in only one patient. Despite the use of antibiotics with anti-staphylococcal activity for treatment of respiratory exacerbation, MRSA infection persists. MRSA can be eradicated from the sputum of patients with CF and chronic MRSA carriage by using rifampicin and sodium fusidate for six months. This finding was associated with a significant reduction in the duration of intravenous antibiotic treatment during therapy. (C) 2003 The Hospital Infection Society. Published by Elsevier Ltd. All rights reserved.

Catalytic effects of subsurface carbon in the chemisorption of hydrogen on a Mg(0001) surface: an ab-initio study

Ab initio density functional theory (DFT) calculations are performed to explore possible catalytic effects on the dissociative chemisorption of hydrogen on a Mg(0001) surface when carbon is incorporated into Mg materials. The computational results imply that a C atom located initially on a Mg(0001) surface can migrate into the subsurface and occupy an fcc interstitial site, with charge transfer to the C atom from neighboring Mg atoms. The effect of subsurface C on the dissociation of H-2 on the Mg(0001) surface is found to be relatively marginal: a perfect sublayer of interstitial C is calculated to lower the barrier by 0.16 eV compared with that on a pure Mg(0001) surface. Further calculations reveal, however, that sublayer C may have a significant effect in enhancing the diffusion of atomic hydrogen into the sublayers through fcc channels. This contributes new physical understanding toward rationalizing the experimentally observed improvement in absorption kinetics of H2 when graphite or single walled carbon nanotubes (SWCNT) are introduced into the Mg powder during ball milling.

First-principle study of adsorption of hydrogen on Ti-doped Mg(0001) surface

Ab initio density functional theory (DFT) calculations are performed to study the adsorption of H-2 molecules on a Ti-doped Mg(0001) surface. We find that two hydrogen molecules are able to dissociate on top of the Ti atom with very small activation barriers (0.103 and 0.145 eV for the first and second H-2 molecules, respectively). Additionally, a molecular adsorption state of H-2 above the Ti atom is observed for the first time and is attributed to the polarization of the H-2 molecule by the Ti cation. Our results parallel recent findings for H-2 adsorption on Ti-doped carbon nanotubes or fullerenes. They provide new insight into the preliminary stages of hydrogen adsorption onto Ti-incorporated Mg surfaces.

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance. © 2014 SPIE.

Colour management of InGaN/GaN based monolithic two-wavelength LEDs

The recent advancement in the growth technology of InGaN/GaN has decently positioned InGaN based white LEDs to leap into the area of general or daily lighting. Monolithic white LEDs with multiple QWs were previously demonstrated by Damilano et al. [1] in 2001. However, there are several challenges yet to be overcome for InGaN based monolithic white LEDs to establish themselves as an alternative to other day-to-day lighting sources [2,3]. Alongside the key characteristics of luminous efficacy and EQE, colour rendering index (CRI) and correlated colour temperature (CCT) are important characteristics for these structures [2,4]. Investigated monolithic white structures were similar to that described in [5] and contained blue and green InGaN multiple QWs without short-period superlattice between them and emitting at 440 nm and 530 nm, respectively. The electroluminescence (EL) measurements were done in the CW and pulse current modes. An integration sphere (Labsphere “CDS 600” spectrometer) and a pulse generator (Agilent 8114A) were used to perform the measurements. The CCT and Green/Blue radiant flux ratio were investigated at extended operation currents from 100mA to 2A using current pulses from 100ns to 100μs with a duty cycle varying from 1% to 95%. The strong dependence of the CCT on the duty cycle value, with the CCT value decreasing by more than three times at high duty cycle values (shown at the 300 mA pulse operation current) was demonstrated (Fig. 1). The pulse width variation seems to have a negligible effect on the CCT (Fig. 1). To account for the joule heating, a duty cycle more than 1% was considered as an overheated mode. For the 1% duty cycle it was demonstrated that the CCT was tuneable in three times by modulating input current and pulse width (Fig. 2). It has also been demonstrated that there is a possibility of keeping luminous flux independent of pulse width variation for a constant value of current pulse (Fig. 3).

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.