Photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser

We report on photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser. Novel fluorescence was observed in the femtosecond laser irradiated glass when excited by a 365 nm ultraviolet lamp. Optical absorption, emission, and electron spin resonance spectra of the glass samples demonstrated that after the laser irradiation, portions of silver ions near the focused part of the laser beam inside the glass were reduced to silver atoms, which resulted in the formation of the characteristic fluorescence. The observed phenomenon may have promising applications in the fabrication of functional optical devices.

Estudo do reparo das lesões induzidas no DNA de Escherichia coli pela radiação ultravioleta C (UVC)

Didaticamente, podemos dividir o espectro da radiação ultravioleta (UV) em três faixas: UVA (400 a 320 nm), UVB (320 a 290 nm) e UVC (290 a 100 nm). Apesar do UVC ou UV-curto ser eficientemente filtrado pela camada de ozônio da Terra e sua atmosfera, este é uma das faixas do espectro de UV mais usadas para explorar as consequências de danos causados ao DNA, já que a letalidade induzida por este agente está relacionada aos danos diretos no genoma celular, como as lesões dímero de pirimidina, que são letais se não reparadas. Contudo, demonstrou-se que a radiação UVC pode gerar espécies reativas de oxigênio (ERO), como o oxigênio singleto (1O2). Embora, o radical hidroxil (OH) cause modificações oxidativas nas bases de DNA, alguns trabalhos indicam que o 1O2 também está envolvido nos danos oxidativos no DNA. Esta ERO é produzida por vários sistemas biológicos e reações fotossensibilização, quando cromóforos são expostos à luz visível ou são excitados pela luz UV, permitindo que essa energia possa ser transferida para o oxigênio sendo convertido em 1O2, que é conhecido por modificar resíduos de guanina, gerando 8-oxoG, que caso não seja reparada pode gerar uma transversão GC-TA. O objetivo deste trabalho foi o de elucidar a participação de ERO nos efeitos genotóxicos e mutagênicos gerados pela radiação UVC, assim como as enzimas envolvidas no processo de reparação destas lesões em células de Escherichia coli. Nos ensaios as culturas foram irradiadas com o UVC (254 nm; 15W General Electric G15T8 germicidal lamp, USA). Nossos resultados mostram que o uso de quelantes de ferro não alterou a letalidade induzida pelo UVC. A azida sódica, um captador de 1O2, protegeu as cepas contra os danos genotóxicos gerados pelo UVC e também diminuiu a frequência de mutações induzidas no teste com rifampicina. A reversão específica GC-TA foi induzida mais de 2,5 vezes no ensaio de mutagênese. A cepa deficiente na proteína de reparo Fpg, enzima que corrige a lesão 8-oxoG, apresentou menos quebras no DNA do que a cepa selvagem no ensaio de eletroforese alcalina. A letalidade induzida pelo UVC foi aumentada nos mutantes transformados com o plasmídeo pFPG, ao mesmo tempo que representou uma redução na indução mutagênica. Houve dimuição na eficiência de transformação com plasmídeo pUC 9.1 na cepa fpg quando comparado a cepa selvagem. Assim como, um aumento da sensibilidade ao UVC na associação entre mutantes fpg e uvrA. Estes resultados mostram que o 1O2 participa dos danos induzidos pelo UVC, através da geração da lesão 8-oxoG, uma lesão mutagênica, que é reparada pela proteína Fpg

Sínteses e caracterizações de TiO2 puro, dopado e co-dopado pelo método sol-gel e suas atividades fotocatalíticas

Nanopartículas de dióxido de titânio vêm sendo extensamente empregadas como fotocatalisa-dores, já que são eficientes na degradação de diversos poluentes. Visando a obtenção de titâ-nias com diferentes propriedades, realizaram-se sínteses através do método sol-gel, a partir da hidrólise do tetraisopropóxido de titânio (IV) TIPP e seguindo-se os princípios da Química Verde, dispensando-se temperaturas e pressões elevadas. Foi estudada a influência de dife-rentes parâmetros, como: pH, solvente, razão molar álcool/TIPP e ordem de adição dos rea-gentes. Foram obtidas titânias na forma cristalina anatásio, nanométricas, com elevadas áreas superficiais específicas e predominantemente mesoporosas. Visando-se obter titânias com melhores propriedades óticas, isto é, capazes de sofrer a fotoativação pela luz visível, foram sintetizadas titânias dopadas e co-dopadas com os metais ferro e rutênio (Fe3+ e Ru3+) e o a-metal N (N3). A síntese desses materiais também foi realizada através do método sol-gel, sendo a dopagem realizada durante o processo de hidrólise. As amostras foram caracterizadas na forma de pó por difração de raios-X, adsorção-dessorção de nitrogênio, microscopia ele-trônica de varredura e espectroscopia de refletância difusa no UV-Visível. A titânia pura a-presentou como única fase cristalina o anatásio, quando calcinada até 400 C, com a presença de traços de brookita. A partir de 600 C, observou-se o aparecimento da fase rutilo, que em 900C foi a única fase encontrada na titânia. A dopagem com Ru3+dificultou a transformação de fase anatásio para rutilo, ao contrário da dopagem com Fe3+. O processo de co-dopagem acelerou a formação de rutilo, que se apresentou como única fase nas amostras calcinadas a 600 C. As titânias dopadas apresentaram uma leve diminuição na energia de bandgap, sendo os dopantes capazes de deslocar a absorção para o vermelho. Foram realizados testes fotoca-talíticos visando à degradação do azocorante Reactive Yellow 145 com lâmpada de vapor de mercúrio de 125 W a fim de se comparar as atividades fotocatalíticas das titânias puras, dopa-das e co-dopadas, calcinadas a 300C. De todas as titânias sintetizadas, a titânia pura foi a que melhor degradou o corante, tendo um desempenho semelhante ao do TiO2 P25, da Evo-nik

PHOTOENHANCED DEPOSITION OF HYDROGENATED AMORPHOUS SILICON THIN FILMS.

This paper will review the different U. V. lamp photo-CVD (Chemical Vapor Deposition) techniques which have been utilized for the production of highly photoconductive hydrogenated amorphous silicon (a-Si:H) thin films. Most of these require the transmission of U. V. light through a window into the reaction vessel; leading to unwanted U. V. light absorption by the window and the a-Si:H film which tends to form on its inner surface. A deposition system developed in our laboratory will also be described, which circumvents these problems by incorporating a windowless discharge lamp into the reaction vessel.

Millisecond processing beyond chip technology: From electronics to photonics

There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boronimplanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond range spread out into other fields related to silicon technology and beyond. This paper reports on recent experiments regarding shallow junction engineering in germanium, annealing of ITO layers on glass and plastic foil to form an conductive layer as well as investigations which we did during the last years in the field of wide band gap semiconductor materials (SiC, ZnO). A more common feature evolving from our work was related to the modeling of wafer stress during millisecond thermal processing with flash lamps. Finally recent achievements in the field of silicon-based light emission basing on Metal-Oxide-Semiconductor Light Emitting Devices will be reported. © 2007 IEEE.

Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.

Photodegradation of 2-naphthol in aqueous solutions in the presence of humic acid and ferric ions

In this work, the photodegradation of the carcinogenic pollutant 2-naphthol in aqueous solution containing Aldrich humic acid (HA) and ferric ions (Fe(III)) under 125 W and 250 W high pressure mercury lamp (HPML, lambda >= 365 nm) irradiation was investigated. The photooxidation efficiencies were dependent on the pH values, light intensities and Fe(III)/HA concentration in the water, with higher efficiency at pHs 3-4, and 50 mu mol l(-1) Fe(III) with 20 mg l(-1) HA under 250 W HPML. The initial rate of photooxidation increases with increasing, the initial concentration of 2-naphthol from 10 mu mol l(-1) to 100 mu mol l(-1), while do not change at 50 and 100 mu mol l(-1). However, higher removal efficiency of 2-naphthol is achieved at its lower initial concentration of 10 mu mol l(-1), and initial rate of photooxidation is 0.193 mu mol l(-1) min(-1). Dissolved oxygen (DO) plays an important role in the system containing Fe(III)-HA complexes in which Fenton and photo-Fenton reactions were enhanced in the environment. Hydroxyl radicals produced in HA solution with or without ferric ions were determined by using benzene as free radical scavenger and phenol as scavenging products proportional to hydroxyl radicals. By using UV-Vis and excited fluorescence spectrum techniques, the main photooxidation products, which have higher absorption in the region of 240-340 nm, were found, and the mechanisms for the oxidative degradation is proposed.

Photoreduction of mercuric salt in UV/Fe (III)-oxalate complex system

In this paper, the photochemical reduction process of Hg (II) in aqueous solution containing ferric iron and oxalate (Ox) has been studied. Under the radiation of a low-pressure mercury lamp (lambda = 253.7 nm, 8W), Fe(III)-oxalate complexes undergo photolysis to produce ferrous ions and other organic reductive species, which reduce Hg(II) subsequently. For 0.1 mg/L Hg (II), the photoreduction efficiency is comparatively higher in the solution at pH 5.0 than that over the range of 3.0 similar to 8.0. The photoreduction efficiency of Ho (II) in aqueous solution increases with increasing, initial concentration of ferric ions from 0.02 mmol/L to 0.2 mmol/L and initial concentration of oxalate from 0.96 mmol/L to 4.8 mmol/L and then gradually approaches to a steady state. CH3OH also contributes the reduction of Hg (II). We investigate the increase of the ferric, oxalate and CH3OH concentrations resulting from the increase of reduction efficiency of Hg (II). It can be seen that ferrous ions and other reactive species are reductants of Hg (II), and the reaction product with oxalate is mainly volatile metallic mercury.

Hybrid bulk heterojunction solar cells from a blend of poly(3-hexylthiophene) and TiO2 nanotubes

Hybrid bulk heterojunction solar cells based on blend of poly(3-hexylthiophene) (P3HT) and TiO2 nanotubes or dye(N719) modified TiO2 nanotubes were processed from solution and characterized to research the nature of organic/inorganic hybrid materials. Compared with the pristine polymer P3HT and TiO2 nanoparticles/P3HT solar cells, the TiO2 nanotubes/P3HT hybrid solar cells show obvious performance improvement, due to the formation of the bulk heterojunction and charge transport improvement. A further improvement in the device performance can be achieved by modifying TiO2 nanotube surface with a standard dye N719 which can play a role in the improvement of both the light absorption and charge dissociation. Compared with the non-modified TiO2 nanotubes solar cells, the modified ones have better power conversion efficiency under 100 mW/cm(2) illumination with 500W Xenon lamp. (C) 2008 Elsevier B. V. All rights reserved.

Research on color matching of LED backlight for large-color-gamut LCD application - art. no. 68410Y

Comparing with the conventional CCFL (Cold Cathode Fluorescent Lamp) backlight, three-basic-color LEDs backlight has some advantages such as good color reproduction, long life and lead free etc. Theoretically, the color gamut is determined by x, y coordinates of the three basic colors in CIE chromaticity diagram, and the x, y coordinates of each basic color can derived from the relative spectrum distribution (RSD) of the LED. In this paper, the red, green and blue LEDs' RSD models are established to calculate and analyze the color gamut of a backlight. By simulating those models, the relationships that the color gamut of a LED backlight varies with each color are analyzed, and the optimum combination of three colors is obtained within the given wavelengths ranges. Moreover, the combinations of three colors for the gamut of 115% NTSC and 110% NTSC are plotted in pictures, respectively.

Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method

Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.