Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD

A determination of {1 1 1}A and {1 1 1}B in cubic GaN(c-GaN) was investigated by X-ray diffraction technique in detail. The c-GaN films are grown on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition(MOCVD). The difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}A and {1 1 1}B planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}A and which is the {1 1 1}B planes. The lesser deviation between the ratios of /F-h k l/(2)//F-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal GaN(h-GaN) grown on c-GaN{1 1 1}A planes is higher than that on {1 1 1}B planes. The reciprocal space mappings provide additional proof that the h-GaN inclusions in c-GaN films appear as lamellar structure. (C) 2001 Published by Elsevier Science B.V.

Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski-Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. (C) 1999 American Institute of Physics. [S0003-6951(99)01010-4].

MOVPE growth of GaN and LED on (111) MgAl2O4

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer

Hexagonal GaN films (similar to 3 mu m) were grown on 3c-SiC/Si(111) and carbonized Si(111) substrates using a thick AlN buffer Cracks are observed on the surface of the GaN film grown on the carbonized Si(111), while no cracks are visible on the 3c-SiC/Si(111). XRD exhibits polycrystalline nature of the GaN film grown on the carbonized Si(111) due to poorer crystalline quality of this substrate. Raman spectra reveal that all GaN layers are under tensile stress, and the GaN layer grown on 3c-SiC/Si(111) shows a very low stress value of sigma(xx) = 0.65 Gpa. In low-temperature Photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of Si impurities from the decomposition of SiC.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Au(111)自组装膜表面原子力显微镜纳米刻蚀

在Au(111)硫醇自组装膜上通过原子力显微镜（AFM）纳米刻蚀加工了各种功能化纳米结构。本论文取得的主要成果如下： 1. “蘸笔”技术移除自组装膜及金基底 以烯丙基溴为墨水，用蘸笔技术在16－巯基十六羧酸（MHA）修饰的Au(111)基底上可以实现对金基底的直接加工，形成阴刻图案；并提出了详细的加工机理。 2. Au(111)自组膜表面的可逆加工 （1）利用乙醇修饰的导电AFM针尖通过电致刻蚀在Au(111)基底的烷基硫醇自组装膜上实现了阴阳刻图案的可逆加工。X射线光电子能谱分析表明阳刻图案的化学组成为氧化金，且此氧化金可被乙醇还原生成金得到阴刻图案。此阴刻图案可用作纳米模板，我们利用此模板加工了氧化铁磁性纳米结构和溶菌酶蛋白质纳米结构。 （2）用修饰硫醇的导电AFM针尖在Au(111)基底上实现了硫醇的可逆书写。 3. Au(111)自组膜表面官能团转化 用硫醇自组装膜修饰的Pt针在Au(111)基底的烷基硫醇自组装膜上实现了表面端基官能团转化。所得亲水性纳米图案可用作物理（如直接吸附纳米粒子）和化学纳米模板（如诱导硅烷自组装）。加工过程中基底自组装膜保持完整，未破坏Au-S键。 4. AFM研究适配子与血小板衍生生长因子－BB的相互作用 利用AFM电致刻蚀在HS-(CH2)12-(OCH2CH2)4-OH（EG4）/Au(111)上选择性移除EG4，在新暴露的金基底上生长血小板衍生生长因子－BB（PDGF-BB）适配子与EG4的混合自组装膜，通过PDGF-BB适配子与 PDGF-BB的特异性键合固定PDGF-BB，得到PDGF-BB的纳米图案。

Au(111)电极上分子相互作用扫描隧道显微镜研究

本论文利用扫描隧道显微镜(STM)在Au(111)电极上结合电化学方法在分子水平上观察分子的吸附组装和结构调控等。主要内容如下： (1) 用现场电化学扫描隧道显微镜(ECSTM)在Au(111)电极上研究了巯基己醇(MHO)取代六苯并苯的详细过程。取代速度强烈依赖于MHO的浓度。浓度较低时，反应速度较慢，我们可以用现场ECSTM跟踪观察详细的取代过程。取代首先发生在靠近重构线肘部的位置，出现单分子或多个六苯并苯分子的取代而形成的pits。随着取代过程的进行，这些小的pits生长或合并成较大的pits；pits周围的六苯并苯分子逐渐被MHO取代，最终在限定的区域内形成有序的domain。观察局部区域的取代过程，我们发现沿着重构线的方向扩展速度最快。快速取代之后，MHO在Au(111)电极表面形成( )R30°晶格结构，而慢速取代之后，MHO在表面形成c(4×2)超结构。与MHO在干净的Au(111)电极上的吸附相比，在六苯并苯修饰的Au(111)电极上即使在很低的浓度下也没有观察到平躺的物理吸附相，而是直接形成化学吸附相。这可能是由于六苯并苯的存在，MHO的碳氢链不能直接与Au原子接触。通过数据分析，我们发现取代速率曲线呈倒S形状。 (2) 我们用循环伏安法(CV)和ECSTM研究了腺嘌呤(Adenine，A)，胸腺嘧啶(Thymine，T)和鸟嘌呤(Guanine，G)单组分及混合组分(A+T)的电化学二维相变。施加在Au(111)电极上的电位不同，A会呈现不同的吸附状态，包括物理吸附相和化学吸附相。在物理吸附的电势范围，高分辨ECSTM图像显示，同一个电势下共存着多样性的A的吸附结构。当基底电势变得更正时，一种更倾斜的吸附状态也就是A的化学吸附相会形成。在较负电位下，A和T能通过分子之间氢键作用在Au(111)电极上形成一种新的网络结构，而G能形成多层吸附。 (3) 利用STM研究了不同方法移除硫醇自组装膜之后金电极表面的再生情况。分别使用了化学法和电化学还原脱附法。化学法比较简单，使用的试剂有王水，piranha和NaBH4。王水对金电极表面有强腐蚀作用；piranha和NaBH4对金表面的作用较小，但是NaBH4处理之后的金表面上会有较多的亮岛出现。在移除自组装膜之后的电极上直接组装六苯并苯，我们观察到用piranha和NaBH4处理之后的金电极表面上六苯并苯自组装膜缺陷较多，有序domain也比较小。电化学法脱附可以得到比较干净的金表面，直接组装的六苯并苯自组装膜有序性好，缺陷少。而且，电化学脱附法通过控制电位可以实现硫醇自组装膜和六苯并苯自组装膜的相互转换。

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.