The insecticidal spider toxin SFI1 is a knottin peptide that blocks the pore of insect voltage-gated sodium channels via a large β-hairpin loop

Spider venoms contain a plethora of insecticidal peptides that act on neuronal ion channels and receptors. Because of their high specificity, potency and stability, these peptides have attracted much attention as potential environmentally friendly insecticides. Although many insecticidal spider venom peptides have been isolated, the molecular target, mode of action and structure of only a small minority have been explored. Sf1a, a 46-residue peptide isolated from the venom of the tube-web spider Segesteria florentina, is insecticidal to a wide range of insects, but nontoxic to vertebrates. In order to investigate its structure and mode of action, we developed an efficient bacterial expression system for the production of Sf1a. We determined a high-resolution solution structure of Sf1a using multidimensional 3D/4D NMR spectroscopy. This revealed that Sf1a is a knottin peptide with an unusually large β-hairpin loop that accounts for a third of the peptide length. This loop is delimited by a fourth disulfide bond that is not commonly found in knottin peptides. We showed, through mutagenesis, that this large loop is functionally critical for insecticidal activity. Sf1a was further shown to be a selective inhibitor of insect voltage-gated sodium channels, consistent with its 'depressant' paralytic phenotype in insects. However, in contrast to the majority of spider-derived sodium channel toxins that function as gating modifiers via interaction with one or more of the voltage-sensor domains, Sf1a appears to act as a pore blocker.

Impulse Voltage Breakdown Characteristics of Point-Plane Gaps at Low Pressures

Practical applications of vacuum as an insulator necessitated determining the low-pressure breakdown characteristics of long gap lengths of a point-plane electrode system. The breakdown voltage has been found to vary as the square root of the gap length. Further, with the point electrode as the anode, the values of the breakdown voltages obtained have been found to be larger than those obtained with a plane-parallel electrode system at a corresponding gap length. By applying the theory of the anode heating mechanism as the cause for breakdown, the results have been justified, and by utilizing a field efficiency factor which is the ratio of the average to maximum field, an empirical criterion has been developed. This criterion helps in calculating the breakdown voltage of a nonuniform gap system by the knowledge of the breakdown voltage of a plane-parallel electrode system.

Rapid synthetic routes to prepare LiNi1/3Mn1/3Co1/3O2 as a high voltage, high-capacity Li-ion battery cathode material

LiNi1/3Mn1/3Co1/3O2, a high voltage and high-capacity cathode material for Li-ion batteries, has been synthesized by three different rapid synthetic methods. viz. nitrate-melt decomposition, combustion and sol-gel methods. The first two methods are ultra rapid and a time period as small as 15 min is sufficient to prepare nano-crystalline LiNi1/3Mn1/3Co1/3O2. The processing parameters in obtaining the best performing materials are optimized for each process and their electrochemical performance is evaluated in Li-ion cells. The combustion-derived LiNi1/3Mn1/3Co1/3O2 sample exhibits large extent of cation mixing (10%) while the other two methods yield LiNi1/3Mn1/3Co1/3O2 with cation mixing <5%. LiNi1/3Mn1/3Co1/3O2 prepared by nitrate-melt decomposition method exhibits superior performance as Li-ion battery cathode material.

Time-Domain Measurement of Voltage Induction by Transient EM Fields

An efficient measurement technique for studying the effect of transient electromagnetic fields under controlled conditions has been described. Broad-band TEM fields with a rise-time of a few nanoseconds were generated using a stripline method. Theoretical results are obtained and experimental measurements which confirm these results are described. The work will form the basis for a study of the susceptibility of digital integrated circuits and their interconnections to transient electromagnetic fields.

Improvement in the voltage grading (axial and radial) of the generator column of a Van de Graaf generator by the use of a resistor chain

It is well known that the use of a series of resistors, connected between the equipotential rings of a Van de Graaff generator, improves the axial voltage grading of the generator. The work reported in this paper shows how the resistor chain also improves the radial voltage gradient. The electrolytic field mapping technique was adopted in the present work.

Low-voltage and high-current delay characteristics of a simple triggered vacuum gap

Low-voltage and high-current switching delay characteristics of a simple triggered vacuum gap (TVG) are described using lead zirconate titanate as the dielectric material in the auxiliary gap. This TVG has superior performance at high currents (up to 14 kA was studied) with regard to delay, reliable firing and extended life as compared to the one using either supramica or silicon carbide. The total delay consists of three intervals: to break down the auxiliary gap, to propagate the trigger plasma and to break down the main gap. The data on the influence of the various parameters like the trigger voltage, current, energy and the main circuit energy are given. It has been found that the delay due to the first two intervals is small compared to the third.

Effect of amplifier imperfections on active networks

The deviation in the performance of active networks due to practical operational amplifiers (OA) is mainly because of the finite gain bandwidth productBand nonzero output resistanceR_0. The effect ofBandR_0on two OA impedances and single and multi-OA filters are discussed. In filters, the effect ofR_0is to add zeros to the transfer function often making it nonminimum phase. A simple method of analysis has been suggested for 3-OA biquad and coupled biquad circuits. A general method of noise minimization of the generalized impedance converter (GIC), while operating OA's within the prescribed voltage and current limits, is also discussed. The 3-OA biquadratic sections analyzed also exhibit noise behavior and signal handling capacity similar to the GIC. The GIC based structures are found to be better than other configurations both in biquadratic sections and direct realizations of higher order transfer functions.

Voltage gated Na+ channels contribute to membrane voltage fluctuation in \alpha T3-1 pituitary gonadotroph cells

\alpha T3-1 cells showed a slope resistance of 1.8 G\omega. The cell membrane surface was not smooth and a scanning electron micrograph showed a complex structure with blebs and microvilli like projections. The cells showed spontaneous fluctuations at zero current resting membrane potential and hyperpolarization increased the amplitude of membrane potential fluctuations. The amplitude of membrane potential fluctuations at hyperpolarized membrane potential was attenuated on application of TTX to the bath solution. The potential at which half steady state inactivation of isolated sodium current occurred, was at a very hyperpolarized potential (-95.4 mV). The study presented in this paper shows that the voltage gated sodium channels contribute to the increase in the amplitude of electrical noise with hyperpolarization in \alpha T3-1 cells.

Kinetic characterization of rat brain type IIA sodium channel alpha-subunit stably expressed in a somatic cell line

1. The rat brain type IIA Na+ channel alpha-subunit was stably expressed in Chinese hamster ovary (CHO) cells. Current through the expressed Na+ channels was studied using the whole-cell configuration of the patch clamp technique. The transient Na+ current was sensitive to TTX and showed a bell-shaped peak current vs. membrane potential relation. 2. Na+ current inactivation was better described by the sum of two exponentials in the potential range -30 to +40 mV, with. a dominating fast component and a small slower component. 3. The steady-state inactivation, h(infinity), was related to potential by a Boltzmann distribution, underlying thr ee states of the inactivation gate. 4. Recovery of the channels from inactivation at different potentials in the range -70 to -120 mV were characterized by al? initial delay which decreased with hyperpolarization. The time course was well fitted by the sum of two exponentials. In this case the slower exponential was the major component, and both time constants decreased with hyperpolarization. 5. For a working description of the Na+ channel inactivation in this preparation, with a minimal deviation from the Hodgkin-Huxley model, a three-state scheme of the form O reversible arrow I-1 reversible arrow I-2 was proposed, replacing the original two-state scheme of the Hodgkin-Huxley model, and the rate constants are reported. 6. The instantaneous current-voltage relationship showed marked deviation from linearity and was satisfactorily fitted by the constant-field equation. 7. The time course of activation was described by an m(x) model. However, the best-fitted value of x varied with the membrane potential and had a mean value of 2. 8. Effective gating charge was determined to be 4.7e from the slope of the activation plot, plotted on a logarithmic scale. 9. The rate constants of activation, alpha(m) and beta(m), were determined. Their functional dependence on the membrane potential was investigated.

A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor

In this work, for the first time, we present a physically based analytical threshold voltage model for omega gate silicon nanowire transistor. This model is developed for long channel cylindrical body structure. The potential distribution at each and every point of the of the wire is derived with a closed form solution of two dimensional Poisson's equation, which is then used to model the threshold voltage. Proposed model can be treated as a generalized model, which is valid for both surround gate and semi-surround gate cylindrical transistors. The accuracy of proposed model is verified for different device geometry against the results obtained from three dimensional numerical device simulators and close agreement is observed.

Estimation of thermal breakdown voltage of HVDC cables - A theoretical framework

The insulation in a dc cable is subjected to both thermal and electric stress at the same time. While the electric stress is generic to the cable, the temperature rise in the insulation is, by and large, due to the Ohmic losses in the conductor. The consequence of this synergic effect is to reduce the maximum operating voltage and causes a premature failure of the cable. The authors examine this subject in some detail and propose a comprehensive theoretical formulation relating the maximum thermal voltage (MTV) to the physical and geometrical parameters of the insulation. The heat flow patterns and boundary conditions considered by the authors here and those found in earlier literature are provided. The MTV of a dc cable is shown to be a function of the load current apart from the resistance of the insulation. The results obtained using the expressions, developed by the authors, are compared with relevant results published in the literature and found to be in close conformity.

Three-level inverter fed open-end winding IM drive with common mode voltage elimination and reduced power device count

A three-level space phasor generation scheme with common mode elimination and with reduced power device count is proposed for an open end winding induction motor in this paper. The open end winding induction motor is fed by the three-level inverters from both sides. Each two level inverter is formed by cascading two two-level inverters. By sharing the bottom inverter for the two three-level inverters on either side, the power device count is reduced. The switching states with zero common mode voltage variation are selected for PWM switching so that there is no alternating common mode voltage in the pole voltages as well as in phase voltages. Only two isolated DC-links, with half the voltage rating of a conventional three-level neutral point clamped inverter, are needed for the proposed scheme.

Linear transconductor with flipped voltage follower in 130 nm CMOS

This paper presents a modified design method for linear transconductor circuit in 130 nm CMOS technology to improve linearity, robustness against process induced threshold voltage variability and reduce harmonic distortion. Source follower in the adaptively biased differential pair (ABDP) linear transconductor circuit is replaced with flipped voltage follower to improve the efficiency of the tail current source, which is connected to a conventional differential pair. The simulation results show the performance of the modified circuit also has better speed, noise performance and common mode rejection ratio compared to the ABDP circuit.

A voltage-sensorless control method to balance the input currents of a three-wire boost rectifier under unbalanced input voltages condition

This paper proposes a control method that can balance the input currents of the three-phase three-wire boost rectifier under unbalanced input voltage condition. The control objective is to operate the rectifier in the high-power-factor mode under balanced input voltage condition but to give overriding priority to the current balance function in case of unbalance in the input voltage. The control structure has been divided into two major functional blocks. The inner loop current-mode controller implements resistor emulation to achieve high-power-factor operation on each of the two orthogonal axes of the stationary reference frame. The outer control loop performs magnitude scaling and phase-shifting operations on current of one of the axes to make it balanced with the current on the other axis. The coefficients of scaling and shifting functions are determined by two closed-loop prportional-integral (PI) controllers that impose the conditions of input current balance as PI references. The control algorithm is simple and high performing. It does not require input voltage sensing and transformation of the control variables into a rotating reference frame. The simulation results on a MATLAB-SIMULINK platform validate the proposed control strategy. In implementation Texas Instrument's digital signal processor TMS320F24OF is used as the digital controller. The control algorithm for high-power-factor operation is tested on a prototype boost rectifier under nominal and unbalanced input voltage conditions.