Grazing incidence X-ray diffraction and atomic force microscopy analysis of BaBi2Ta2O9 thin films

Thin films of BaBi2Ta2O9 (BBT) composition were prepared through the metal organic decomposition method. The crystallinity, phase formation, crystallite size and morphology of the thin films were measured as a function of the type of substrate, stoichiometry of solution and process variables such as thickness and temperature. The thin films were investigated by grazing incidence X-ray diffractometry and atomic force microscopy (AFM) techniques. For the sample without excess of bismuth, diffraction peaks other than that of the BBT phase were observed. A well crystallized BBT single phase was observed for films prepared from a solution with 10% excess of bismuth, deposited on Si/Pt substrate, with a thickness up to 150 nm and sintered at temperatures of 700 degreesC. The thin BBT phase films heat-treated at 600 degreesC presented a diffraction pattern characteristic of samples with lower degree of crystallinity whereas for the thin films heat-treated at 800 degreesC, we observed the presence of other phases than the BBT. For the thin film deposited on the Sin+ substrate, we observe that the peaks corresponding to the BBT phase are broader than that observed on the samples deposited on the Pt and Si/Pt substrates. No variation of average crystallite size was observed as the excess of Bi increased from 10 to 20%. AFM images for the samples showed that the increasing the amount of bismuth promotes grain growth. The average surface roughness measured was in the range of 16-22 nm showing that the bismuth amount had no or little effect on the roughness of films. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Nanostructure and properties of ZnO films produced by the pyrosol process

Indium doped ZnO films were deposited by the pyrosol process on glass substrates at different temperatures from solutions containing In/Zn molar ratios up to 10%. The nanostructure of the films was investigated using grazing-incidence small angle X-ray scattering (GISAXS). The mass density was determined by X-ray reflectivity and the composition by X-ray photoelectron spectroscopy. The GISAXS measurements revealed an anisotropic pattern for films deposited at 573 and 623 K and a isotropic one for those deposited at higher temperatures. The anisotropic patterns indicate the presence of elongated nanopores with their long axes perpendicular to the film surface. In contrast, the isotropic nature of GISAXS patterns of films grown at high temperatures (673 and 723 K) suggests the presence of spherical voids. The pore size distribution function determined from the isotropic patterns indicates a multimodal size distribution. on the other hand, the measured mass density of the doped films with isotropic nanotexture is higher than that of the anisotropic films while the electric resistivity is significantly lower. This is in agreement with the detected strong reduction of the void density and specific surface area at approximately constant pore size.

Effect of thermal treatment temperature on the crystallinity and morphology of LiTaO3 thin films prepared from polymeric precursor method

Lithium tantalate thin films (LiTaO3) with (50:50) stoichiometry were prepared by spin coating method using a polymeric organic solution. The films were deposited on silicon (100) substrates with 4 layers. The substrates were previously cleaned and then the solution of lithium tantalate was deposited by adjusting the speed at 5000 rpm. The thin films deposited were thermally treated from 350 to 600degreesC for 3 hours in order to study the influence of the thermal treatment temperature on the crystallinity, microstructure, grain size and roughness of the final film. X-ray diffraction (XRD) results showed that the films are polycrystalline and secondary phases free. The thickness of films was observed by scanning electron microscopy (SEM). The atomic force microscopy (AFM) studies showed that the grain size and roughness are strongly influenced by thermal treatment.

Ferroelectric characteristics of BiFeO3 thin films prepared via a simple chemical solution deposition

BiFeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 degrees C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 degrees C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations. (c) 2007 American Institute of Physics.

Increasing the dielectric breakdown strength of poly(ethylene terephthalate) films using a coated polyaniline layer

The dielectric strength of films made from poly(ethylene terephthalate) (PET) coated with a thin layer of polyaniline (PANI) was studied. The PANI layer was deposited on the PET films by the 'in situ' chemical polymerization method. The PANI layer of the PANI/PET films was undoped in NH4OH 0.1 M solution and re-doped with aqueous HCl solution under different pH values varying from 1 to 10. Electric breakdown measurements were performed by applying a voltage ramp and the results showed a dependence of the dielectric strength on the pH of the doping solution due to the changes in the electrical conductivity of the PANI layer. The dielectric strength of PET/PANI films treated under higher pH conditions showed an electric strength about 30% larger than the PET films, since it leads to a non-conductive PANI layer.

Density improvement of the sol-gel dip-coated SnO2 films by chemical surface modification

We compare the effect of organic (Tiron (R)) and inorganic (Mn(11)) additives on the low temperature (< 600 degrees C) densification of the sol-gel dip-coated SnO2 films. The structural and compositional properties of the samples were investigated by X-ray reflectometry (XRR), X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS). The results suggest that the replacement of hydroxyl groups at the particle surface by Tiron (R) reduces the level of agglomeration of the sol, increasing the particles packing and the apparent density of the coatings. Undoped and Mn-doped films drawn from a Tiron (R) containing suspension show after firing at 500 degrees C a porosity reduction of 12 and 8.6%, respectively. The porosity decrease is less pronounced (4.3%) for the film without additives. Both XAS and XPS data show the presence of trivalent manganese. The formation of a non-homogeneous solid solution characterised by the presence of Mn(111) replacing tin atom near to the crystallite surface was evidenced by XAS. Additionally, XPS results reveal the presence of metallic Sn at the surface of films containing Tirono. (c) 2005 Elsevier Ltd. All rights reserved.

Structure, microstructure, ferroelectric/electromechanical properties and retention characteristics of [Bi1-x Nb (x) ]FeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric properties of pure and lanthanum modified bismuth titanate thin films

We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.

Diverse Amorphous Carbonaceous Thin Films Obtained by Plasma Enhanced Chemical Vapor Deposition and Plasma Immersion Ion Implantation and Deposition

Diverse amorphous hydrogenated carbon and similar films containing additional elements were produced by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Plasma Immersion Ion Implantation and Deposition (PIIID). Thus a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:O:Si were obtained, starting from the same feed gases, using both techniques. The same deposition system supplied with radiofrequency (RF) power was used to produce all the films. A cylindrical stainless steel chamber equipped with circular electrodes mounted horizontally was employed. RF power was fed to the upper electrode; substrates were placed on the lower electrode. For PIIID negative high tension pulses were also applied to the lower electrode. Raman spectroscopy confirmed that all the films are amorphous. Chemical characterization of each pair of films was undertaken using Infrared Reflection Absorption Spectroscopy and X-ray Photoelectron Spectroscopy. The former revealed the presence of specific structures, such as C-H, C-O, O-H. The latter allowed calculation of the ratio of hetero-atoms to carbon atoms in the films, e. g. F:C, N:C, and Si:C. Only relatively small differences in elemental composition were detected between films produced by the two methods. The deposition rate in PIIID is generally reduced in relation to that of PECVD; for a-C:H:Cl films the reduction factor is almost four.

Preparation and characterization of SrBi2Nb2O9 thin films made by polymeric precursors

A polymeric precursor solution was employed in preparing SrBi2Nb2O9 (SBN) powder and thin films dip coated onto Si(100) substrate. XRD results show that the SBN perovskite phase forms at temperatures as low as 600°C through an intermediate fluorite phase. This fluorite phase is observed for samples heat-treated at temperatures of 400 and 500°C. After heat treatment at temperatures ranging from 300 to 800°C, thin films were shown to be crack free. Grazing incident angle XRD characterization shows the occurrence of the fluorite intermediate phase for films also. The thickness of films, measured by MEV, was in the order of 80-100 nm.

On the nucleation of GaP/GaAs and the effect of buried stress fields

We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.

Measurement of phase and amplitude modulations in Sb-Based Films

In this work we studied the changes of the optical constants of films in the binary system Sb2O3-Sb2S3 induced by light in the VIS-UV. The measurements were performed before and after homogeneous irradiation of the films to a Hg lamp and in real time during the holographic exposure of the samples (at 458nm). Changes of the absorption coefficient (amplitude grating) and refractive index (phase grating) were measured simultaneously using the self-diffraction using the holographic setup. Besides the films presented a strong photodarkening effect under homogeneous irradiation, the samples holographically exposed presented only refractive index modulations. None amplitude modulation was measured in real time for spatial frequencies of about 1000 l/mm. © 2009 SPIE.

Evaluation of movements of lower limbs in non-professional ballet dancers: Hip abduction and flexion

Background: The literature indicated that the majority of professional ballet dancers present static and active dynamic range of motion difference between left and right lower limbs, however, no previous study focused this difference in non-professional ballet dancers. In this study we aimed to evaluate active movements of the hip in non-professional classical dancers.Methods: We evaluated 10 non professional ballet dancers (16-23 years old). We measured the active range of motion and flexibility through Well Banks. We compared active range of motion between left and right sides (hip flexion and abduction) and performed correlation between active movements and flexibility.Results: There was a small difference between the right and left sides of the hip in relation to the movements of flexion and abduction, which suggest the dominant side of the subjects, however, there was no statistical significance. Bank of Wells test revealed statistical difference only between the 1st and the 3rd measurement. There was no correlation between the movements of the hip (abduction and flexion, right and left sides) with the three test measurements of the bank of Wells.Conclusion: There is no imbalance between the sides of the hip with respect to active abduction and flexion movements in non-professional ballet dancers. © 2011 Valenti et al; licensee BioMed Central Ltd.

Crystallization and optical properties of CCTO thin films under pressure influence

CCTO thin films were deposited on Pt(111)/Ti/SiO 2/Si substrates using a chemical (polymeric precursor) and pressure method. The pressure effects on the CCTO thin films were evaluated by XRD, FEG-SEM and optical properties. Pressure films were found to be more homogeneous and dense than chemical deposition films. Pressure also leaded to an increase in the photoluminescence emission; it is suggested that the displacement of Ti in the titanate clusters, favors the charge transference from TiO 6 to [TiO 5V o z], TiO 5V o z] to [CaO 11V o z] and [TiO 5V o z] to [CuO 4] x. The low synthesis temperature used in the pressure method allows the deposition of films on less expensive substrates (i.e. glass, aluminum, polymer and others).