碳化硅中氦离子高温注入引出的缺陷及其退火行为的光谱研究

6H-SiC single crystal specimens were implanted at 600 K with 100 KeV He ions to three successively increasing fluences and subsequently annealed at different temperatures ranging from 600℃ to 1200℃ in vacuum.After the annealing,the samples were investigated by using Raman scattering spectroscopy and photoluminescence spectrometry,respectively.Both of the two methods showed that the damage induced by helium-ion-implantation in the lattice is closely related to the dose.The thermal annealing brings about reco...中文摘要：对氦(He)离子高温(600K)注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明:高温(600K)注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能.

碳化硅中氦离子高温注入引入的缺陷及其退火行为的光谱研究

对氦(He)离子高温(600K)注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明:高温(600K)注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能.

氦离子注入4H-SiC晶体的纳米硬度研究；Study on nanohardness of helium-implanted 4H-SiC

4H-SiC晶体经能量为100keV,剂量为3×1016cm-2的氦离子高温(500K)注入后,再在773—1273K温度范围内进行了退火处理,最后使用纳米压痕仪测量了样品注入面的硬度.测试结果表明,在500—1273K温度范围内样品的硬度随退火温度升高呈现先增大后减小再增大的趋势,其中773K退火样品的硬度增大明显.分析认为,退火样品的硬度变化是由退火过程中缺陷复合与氦泡生长导致样品内部的Si—C键密度、键长和键角改变引起的.

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

碳化硅中氦离子辐照缺陷演化及SiCOI薄膜合成的研究

碳化硅是一种宽带隙半导体材料,具有禁带宽度大、击穿电压高、热导率高、电子饱和漂移速度大、介电常数小、抗辐射能力强、化学稳定性好等优良特性,使其在越来越多的领域如航空航天、太空探测、人造卫星、地热勘探、核能仪器、雷达通讯等, 所需要高温、高速、高频、大功率的微电子器件方面倍受青睐,并和氮化镓、金刚石一起被誉为发展前景十分广阔的第三代半导体材料。本论文采用He+离子注入,在SiC衬底一定深度引入纳米气泡/空腔的方法,来增强对氧原子的俘获以增加O原子在RP处局域浓度,使得更利于O与Si的反应,从而促进氧化埋层的形成,以达到降低注入O的剂量而形成优良的氧化物电绝缘层的目的。由于高剂量的O注入会引起表层SiC材料的损伤，该方法有望缓解目前SIMOX技术中O离子高剂量注入引起表层材料的损伤问题，以期获得低成本、低缺陷密度的SiCOI材料。论文主要开展了如下研究：（1）对He+离子高温（600 K）注入6H-SiC中产生的辐照缺陷,以及缺陷在阶梯温度退火的演化行为的特征进行了分析。实验采用100 keV的He+,辐照剂量范围为3.0×1015～3.0×1016 He+/cm2。利用拉曼光谱、室温光致发光谱、红外吸收光谱、沟道卢瑟福背散射谱的特征进行了分析。实验结果表明,离子注入所产生晶格损伤的程度与He+离子注入剂量有关；高温退火使得损伤得到恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复。高剂量注入的样品在阶梯温度退火条件下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性。与室温注入相比,高温注入引入的自退火作用使大部分简单缺陷发生复合,限制了损伤的积累,从而在材料中产生相对较小的损伤。在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能。 （2）对He的预注入引入的辐照缺陷与随后注入的氧原子的相互作用机理进行了初步分析。实验采用先He后O注入的方法，采用的离子能量为30 keV (He+)，100 keV (O+)；剂量分别为3.0×1016 (He+)、1.0×1017 (O+) ions/cm2。拉曼散射谱结果表明,空腔对氧的吸收主要是通过捕获简单缺陷释放出来的间隙氧原子实现的,进而促进了对氧的吸附,形成硅氧化合物,有利于氧化埋层的形成。紫外-可见吸收谱中的干涉带表明在材料表面下大概198 nm处是损伤层与晶体层的分界面，接近于SRIM2006估算得到的30 keV He+和100 keV O+辐照损伤的深度（He+辐照损伤的深度为195 nm；O+辐照损伤的深度为165 nm）。沟道卢瑟福背散射谱表明，在特定深度（约150 nm）处,样品中形成了接近非晶的埋层。He离子预注入的碳化硅基体由于含有较多的空位,注入的氧在退火过程中从简单缺陷中释放,向空腔层扩散并捕获在空腔层内,使得He离子预先注入形成的空腔层限制了随后O离子注入造成的损伤层的厚度

Nanocluster-containing mesoporous magnetoceramics from hyperbranched organometallic polymer precursors

Pyrolysis of hyperbranched poly[1,1'-ferrocenylene(methyl)silyne] (5) yields mesoporous, conductive, and magnetic ceramics (6). Sintering at high temperatures (1000-1200 degrees C) under nitrogen and argon converts 5 to 6N and 6A, respectively, in similar to 48-62% yields. The ceramization yields of 5 are higher than that (similar to 36%) of its linear counterpart poly[1,1'-ferrocenylene(dimethyl)silylene] (1), revealing that the hyperbranched polymer is superior to the linear one as a ceramic precursor. The ceramic products 6 are characterized by SEM, XPS, EDX, XRD, and SQUID. It is found that the ceramics are electrically conductive and possess a mesoporous architecture constructed of tortuously interconnected nanoclusters. The iron contents of 6 estimated by EDX are 36-43%, much higher than that (11%) of the ceramic 2 prepared from the linear precursor 1. The nanocrystals in 6N are mainly alpha-Fe2O3 whereas those in 6A are mainly Fe3Si. When magnetized by an external field at room temperature, 6A exhibits a high-saturation magnetization (M-s similar to 49 emu/g) and near-zero remanence and coercivity; that is, 6A is an excellent soft ferromagnetic material with an extremely low hysteresis loss.

Laser-heated high-temperature NMR - a time-resolution study

Submitted to Appl Magn Reson Sponsorship: EPSRC / EU

Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC

Jenkins, Tudor; Hayton, D.J.; Bailey, P.; Noakes, T.C.Q., (2002) 'Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC', Semiconductor Science and Technology 17 pp.L29-L32 RAE2008

Incipient plasticity in 4H-SiC during quasistatic nanoindentation

Silicon carbide (SiC) is an important orthopaedic material due to its inert nature and superior mechanical and tribological properties. Some of the potential applications of silicon carbide include coating for stents to enhance hemocompatibility, coating for prosthetic-bearing surfaces and uncemented joint prosthetics. This study is the first to explore nanomechanical response of single crystal 4H-SiC through quasistatic nanoindentation. Displacement controlled quasistatic nanoindentation experiments were performed on single crystal 4H-SiC specimen using a blunt Berkovich indenter (300 nm tip radius) at extremely fine indentation depths of 5 nm, 10 nm, 12 nm, 20 nm, 25 nm and 50 nm. Load-displacement curve obtained from the indentation experiments showed yielding or incipient plasticity in 4H-SiC typically at a shear stress of about 21 GPa (~an indentation depth of 33.8 nm) through a pop-in event. An interesting observation was that the residual depth of indent showed three distinct patterns: (i) Positive depth hysteresis above 33 nm, (ii) no depth hysteresis at 12 nm, and (iii) negative depth hysteresis below 12 nm. This contrasting depth hysteresis phenomenon is hypothesized to originate due to the existence of compressive residual stresses (upto 143 MPa) induced in the specimen by the polishing process prior to the nanoindentation