A Novel Micro- and Nano-Scale Positioning Sensor Based on Radio Frequency Resonant Cavities

In many micro- and nano-scale technological applications high sensitivity displacement sensors are needed, especially in ultraprecision metrology and manufacturing. In this work a new way of sensing displacement based on radio frequency resonant cavities is presented and experimentally demonstrated using a first laboratory prototype. The principle of operation of the new transducer is summarized and tested. Furthermore, an electronic interface that can be used together with the displacement transducer is designed and proved. It has been experimentally demonstrated that very high and linear sensitivity characteristic curves, in the range of some kHz/nm; are easily obtainable using this kind of transducer when it is combined with a laboratory network analyzer. In order to replace a network analyzer and provide a more affordable, self-contained, compact solution, an electronic interface has been designed, preserving as much as possible the excellent performance of the transducer, and turning it into a true standalone positioning sensor. The results obtained using the transducer together with a first prototype of the electronic interface built with cheap discrete elements show that positioning accuracies in the micrometer range are obtainable using this cost-effective solution. Better accuracies would also be attainable but using more involved and costly electronics interfaces.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.