Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

High-kappa TiO2 thin films have been fabricated using cost effective sol-gel and spin-coating technique on p-Si (100) wafer. Plasma activation process was used for better adhesion between TiO2 films and Si. The influence of annealing temperature on the structure-electrical properties of titania films were investigated in detail. Both XRD and Raman studies indicate that the anatase phase crystallizes at 400 degrees C, retaining its structural integrity up to 1000 degrees C. The thickness of the deposited films did not vary significantly with the annealing temperature, although the refractive index and the RMS roughness enhanced considerably, accompanied by a decrease in porosity. For electrical measurements, the films were integrated in metal-oxide-semiconductor (MOS) structure. The electrical measurements evoke a temperature dependent dielectric constant with low leakage current density. The Capacitance-voltage (C-V) characteristics of the films annealed at 400 degrees C exhibited a high value of dielectric constant (similar to 34). Further, frequency dependent C-V measurements showed a huge dispersion in accumulation capacitance due to the presence of TiO2/Si interface states and dielectric polarization, was found to follow power law dependence on frequency (with exponent `s'=0.85). A low leakage current density of 3.6 x 10(-7) A/cm(2) at 1 V was observed for the films annealed at 600 degrees C. The results of structure-electrical properties suggest that the deposition of titania by wet chemical method is more attractive and cost-effective for production of high-kappa materials compared to other advanced deposition techniques such as sputtering, MBE, MOCVD and AID. The results also suggest that the high value of dielectric constant kappa obtained at low processing temperature expands its scope as a potential dielectric layer in MOS device technology. (C) 2015 Elsevier Ltd. All rights reserved.

Estimation of background carrier concentration in fully depleted GaN films

Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN high electron mobility transistors (HEMTs) and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carrier concentrations in fully depleted GaN films using capacitance-voltage (C-V) measurements. Extensive mercury probe C-V profiling has been performed on GaN films of differing thicknesses and doping levels in order to validate this model. Carrier concentrations as extracted from both the conventional C-V technique for partially depleted films having the same doping concentration, and Hall measurements show excellent agreement with those predicted by the proposed model thus establishing the utility of this technique. This model can be readily extended to estimate background carrier concentrations from the depletion region capacitances of HEMT structures and fully depleted films of any class of semiconductor materials.

DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating

High-kappa TiO2 thin films have been fabricated from a facile, combined sol-gel spin - coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO2 with a small grain size of 18 nm. The refractive index `n' quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 angstrom. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO2 were studied by capacitance - voltage (C - V) and deep level transient spectroscopy (DLTS). The flat - band voltage (V-FB) and the density of slow interface states estimated are -0.9, -0.44 V and 5.24x10(10), 1.03x10(11) cm(-2); for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross -sections measured by DLTS are E-V + 0.30, E-C - 0.21 eV; 8.73x10(11), 6.41x10(11) eV(-1) cm(-2) and 5.8x10(-23), 8.11x10(-23) cm(2) for the NMOS and PMOS structures, respectively. A low value of interface state density in both P-and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent. (C) 2015 Author(s).

High-kappa TiO2 Thin Film Prepared by Sol-Gel Spin-Coating Method

High-k TiO2 thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of congruent to 0.6 nm. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), oxide trapped charge (Q(ot)), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, -0.91 V, 4.7x10(-12) C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm(2) for -1 V and 5.7e-7 A/cm(2) for +1 V) for CMOS applications.

High-kappa TiO2 Thin Film Prepared by Sol-Gel Spin-Coating Method

High-k TiO2 thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of congruent to 0.6 nm. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), oxide trapped charge (Q(ot)), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, -0.91 V, 4.7x10(-12) C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm(2) for -1 V and 5.7e-7 A/cm(2) for +1 V) for CMOS applications.

Laboratory determination of coefficient of consolidation from pore water pressure measurement

In the recent past, many studies have been carried out on the determination of coefficient of consolidation (c(v)) from the time (t)-deformation (d) data obtained from conventional consolidation tests. Several researchers have also proposed different curve fitting procedures for determining cv from the t-d data. It is anticipated that the cv values obtained from the t-d data may be influenced by initial and secondary compressions. Nevertheless, the pore water pressure data measured during the consolidation process will be independent of initial and secondary compressions. In this study, the conventional Asaoka (1978) method is extended to evaluate cv and end-of-primary (EOP) consolidation from the pore water pressure data measured from laboratory experiments. Laboratory experiments were carried out on the modified one-dimensional consolidation apparatus on different remoulded clay samples measuring pore water pressure during the consolidation process. The cv and EOP computed from the proposed approach have been compared with the results of the t-d data and found to be in good agreement.

Nickel Electrode for Improving Current Density in Organic Electronic Device

In this work, polymer diode performance was analyzed by using nickel as anode electrode from two kinds of nickel as starting materials, namely nickel wire Ni{B} and nickel nano-particle Ni{N}. Metal electrode surface roughness and grain morphology were investigated by atomic force microscope and scanning electron microscope, respectively. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured for the fabricated device at room temperature. Obtained result from the current-voltage characteristics shows an increment in the current density for nickel nano-particle top electrode device. The increase in the current density could be due to a reduction in built-in voltage at P3HT/Ni{N} interface.

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, similar to 35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 degrees C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 angstrom, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), dielectric constant (kappa) and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37V, 15 and 2 x 10(-11) C, respectively. The small flat band voltage 0.37V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 x 10(-9)A/cm(2) at 1V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics. (C) 2016 Published by Elsevier B.V.

Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.

Estudio del crecimiento del camarón de agua dulce (M rosenbergu), en condiciones semi-intensivas en la comunidad de Alos Encuentros, Municipio de Limay, Esteli

Con el propósito de determinar el comportamiento de rasgos de crecimiento del camarón de agua dulce M. rosenbergii. Se montó un ensayo en la comunidad de los Encuentros, municipio de Limay, Estelí. Para tal efecto se utilizaron tres estanques de tierra de 200m 3 c/u en los que se sembraron 5 post larvas/m2. La alimentación fue a base de concentrado con 35%, 25%, 20% de proteína respectivamente de manera igual para los tres estanques. Se efectuaron muestreos, de talla, peso con respecto a la edad siendo estos el primer muestreo al momento de la siembra el segundo a los 30 días y los restantes cada 20 días, hasta los 190 días que culminó el ensayo, para determinar el crecimiento de los camarones de agua dulce M. rosenhergií mediante análisis estadísticos se empleó el modelo no lineal sugerido por Pearl-read (1923) y = k/1+bea:. Para realizar un menor ajuste de los datos se procedió a linealizarlos por medio de una regresión con la ecuación: Ln (k/y)-1 = Lnb±ax. Para el primer estanque se construyó el modelo Ln(k/y)-1 = 6.69459 = 0.97948 (cm), el error estándar para Lnb y a son de 0.338010.57300 respectivamente, laPr> ltl iguala 1.0001con r2 = 0.976605 y C.V= 29.66412. En el segundo estanque se obtuvo Ln(kly)-1 = 6.53469- 0.89897 (cm) el error standard para Lnb y a son de 0.4235;0.6858. La Pr > ltl para ambos son de 0.0001 con r1 = 0.96084 y C.V= 36.20477, para el tercer estanque se tiene valores de Ln (k/y)-1 = 6.93459- 1.116595 (cm) con error standard de Lnb y a = 1.04923; 0.180752 y para Pr > ltl fue de 0.0003;0.0005 con un r2= 0.8450 y C.V = 126.7102, al hacer un análisis de regresión combinando los tres estanques se obtuvo valores deLn(k/y)-1 = 5.5224-0.8068 (cm) con errores standard de Lnb y a= O.2878; 0.480 y para Pr > ltl fue de 0.0001 con un r2=; 0.9700 y C.V = 31.489, el comportamiento de crecimiento de los camarones de agua dulce M. rosenbergii sometidos a estudio bajo las mismas condiciones de cultivo tuvieron diferencias de talla y peso siendo éstas de 0.331 cm; 2.S02 g. del estanque 2 vs estanque 1; 1.093 cm, 4.3500 g del estanque 2 vs estanque 3 y 0.762 cm; 1.848 g para el estanque 1 vs estanque 3, sin embargo para los estanques en estudio se observó un aumento de talla y peso entre los 110-130 días de edad.

Utilización de caracteres cualitativos y cuantitativos determinantes en la variación fenotípica de pitahaya (Hylocereus undatus Britt y Rosse), que permiten proponer una guía de descriptores

La pérdida de diversidad genética es un proceso que transcurre a gran velocidad, para preservar y conservar estos recursos genéticos vegetales, se hace necesario el inventario y caracterización (agronómica, morfológica, genética, bioquímica, etc), con el propósito de describir y diferenciar el material genético. Las estrategias de conservación del germoplasma deben basarse en la preservación de las poblaciones en su hábitat ( in situ) y la preservación fuera de su hábitat (ex situ). El presente estudio se desarrolló durante el período de octubre (2002) a noviembre (2002), muestreado en la zona del pacífico en los departamentos de Chinandega, León, Managua, Masaya, Granada, Carazo y Rivas con el objetivo de proponer una guía de descriptores del cultivo de pitahaya (Hylocereus undatus Britt & Rosse), definir descriptores que determinen similitud y relación entre los diferentes materiales genéticos y la realización de un catálogo de los caracteres cuantitativos de la estructura floral y vegetativa de esta especie, mediante análisis de estadística descriptiva, análisis de correlación y técnicas de taxonomía numérica como análisis de componentes principales (ACP) y análisis de agrupamiento (AA). Se encontró que esta especie florece con las primeras lluvias de mayo a junio, el periodo de producción es de mayo a noviembre, obteniendo mayores rendimientos entre agosto y septiembre. El cultivo de la pitahaya tiene amplia distribución en el país, cultivado en huertos familiares y de forma comercial, abasteciendo al mercado local de Masaya principalmente y en menor proporción a los otros departamentos, localizando los mejores frutos en La Concepción (cerro San Ignacio), debido a las condiciones ambientales y de adaptación del material genético en la zona. Tiene usos múltiples como fruta fresca, alimento para el ganado, uso medicinal. Se determinó que la variable diámetro del estilo presentó un C.V de 83.11% y el peso de la cáscara un C.V de 61.24%, siendo estas dos las que presentan mayor variación. Las variables diámetro basal de la flor y número de pétalos presentaron un C.V de 10.60% y 9.37% respectivamente, siendo las de menor variación. Asimismo las variables forma de brácteas inferior y superior al igual que el color primario y secundario presentaron semejanzas. El análisis de componentes principales determinó que el 46.83% de la variación total que la aportan los 3 primeros componentes y las variables que la integran son VOLFRU, PESFRU, LONFRU, PESCAS, VOLPUL y DIAFRU para discriminar un 19.24% en el primer componente; las variables COLFRU, UNIFES, DIAESTI, LONESP aislaron un 14.81% en el segundo componente y un 12.78% para el tercer componente conformado por NUMBRF, DIAEST y DIAFLO, estas variables pueden ser utilizadas para evaluar materiales de pitahayas.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.