星间激光通讯中的精跟踪研究

星间激光通讯中，精跟踪起着十分重要的作用，而精密偏转镜（FSM）是精跟踪系统中最为关键的部件．基于光学矢量反射定律，推导得到了FSM的精确光学特性，这一特性为精跟踪控制系统提供了精确的理论依据．设计了基于FSM精确光学特性的精跟踪控制系统，对系统整定所用的单纯形法进行了两点重要改进，并对所设计的精跟踪系统进行了数字模拟，由此实现了对FSM的精确控制，提高了精跟踪系统的精确性；将光学衍射超分辨原理应用到星间激光通讯中．利用三区位相光瞳滤波器的超分辨性能，改变光学系统的点扩散函数，从而改变接收端焦平面上的光强

Investigations into electronic stopping regime sputtering of uranium tetrafluoride

Yields were measured for ²³⁵U sputtered from UF₄ by ¹⁶O, ¹⁹F, and ³⁵Cl over the energy range ~.12 to 1.5 MeV/ amu sing a charge equilibrated beam in the stripped beam arrangement for all the incident ions and in the transmission arrangement for ¹⁹F and ³⁵Cl. In addition, yields were measured for ¹⁹F incident in a wide range of discrete charge states. The angular dependence of all the measured yields were consistent with cosʋ. The stripped beam and transmission data were well fit by the form (Az²eqln(BƐ)/Ɛ)⁴ (where Ɛ was the ion energy in MeV/amu and z_eq(Ɛ) was taken from Zeigler(80). The fitted values of B for the various sets of data were consistent with a constant B₀, equal to 36.3 ± 2.7, independent of incident ion. The fitted values of A show no consistent variation with incident ion although a difference can be noted between the stripped beam and transmission values, the transmission values being higher.

The incident charge data were well fit by the assumptions that the sputtering yield depended locally on a power of the incident ion charge and that the sputtering from the surface is exponentially correlated to conditions in the bulk. The equilibrated sputtering yields derived from these data are in agreement with the stripped beam yields.

In addition, to aid in the understanding of these data, the data of Hakansson(80,81a,81b) were examined and contrasted with the UF₄ results. The thermal models of Seiberling(80) and Watson(81) were discussed and compared to the data.

列阵透镜对能量测量影响的分析

结合列阵透镜的透过率分析了其后的光场分布。列阵透镜由多个列阵元拼接而成，用以改善主透镜焦点附近能量分布的均匀性。列阵透镜在提高辐照均匀性的同时，给能量测量带来了不利的影响。这是由于经过列阵元的相邻子光束会产生干涉，干涉条纹处的激光能量密度和功率密度相应都大为增加，其数值在干涉区域中心处能上升到原来的4倍。更高的能量密度和功率密度对能量计提出了更苛刻的要求。在没有采取适当措施的时候使用，就会损坏能量计。

机载测深激光雷达千赫兹全固态激光器设计及特性研究

将千赫兹高功率全固态Nd：YAG激光器的增益介质当作厚透镜处理，使用矩阵的方法对等效热透镜腔进行分析。采用多条半导体激光列阵侧向紧凑抽运结构设计，提高了增益介质光抽运的均匀性。根据实际抽运功率，通过模拟计算，设计了平凸非稳腔。选择的凸面全反镜的最佳曲率半径有效地补偿了增益介质热透镜效应，激光器实现了动态稳腔运转，激光脉冲能量输出斜度效率大于13％，光束发散角优于1.3mrad。

大气到海洋激光通信信道仿真

详细分析了蓝绿激光穿过大气海洋信道的信道效应和物理特性,利用理论分析和蒙特卡罗模拟方法完成对光信道仿真。介绍了大气海洋激光通信蒙特卡罗模拟方法及计算步骤。研究了不同厚度云层对光束投影面积的展宽,和光脉冲穿过不同深度海水后的空间分布和时域信号波形,讨论了其不同的展宽机理,并对信道的噪声分布进行了分析。发现云层对光脉冲展宽作用在云层厚度500 m时达到饱和,信号能量的随机起伏随海水深度的增加而增大,但能量分布的半峰全宽并不增加,大气海洋的综合信道效应可以用时延滤波器进行建模。

Bonding regimes of nitrogen in amorphous carbon

Nitrogen can have numerous effects on diamond-like carbon: it can dope, it can form the hypothetical superhard compound C3N4, or it can create fullerene-like bonding structures. We studied amorphous carbon nitrogen films deposited by a filtered cathodic vacuum arc as a function of nitrogen content, ion energy and deposition temperature. The incorporation of nitrogen from 10-2 to 10 at% was measured by secondary ion mass spectrometry and elastic recoil detection analysis and was found to vary slightly sublinearly with N2 partial pressure during deposition. In the doping regime from 0 to about 0.4% N, the conductivity changes while the sp3 content and optical gap remain constant. From 0.4 to approximately 10% N, existing sp2 sites condense into clusters and reduce the band gap. Nitrogen contents over 10% change the bonding from mainly sp3 to mainly sp2. Ion energies between 20 and 250 eV do not greatly modify this behaviour. Deposition at higher temperatures causes a sudden loss of sp3 bonding above about 150 °C. Raman spectroscopy and optical gap data show that existing sp2 sites begin to cluster below this temperature, and the clustering continues above this temperature. This transition is found to vary only weakly with nitrogen addition, for N contents below 10%.

Properties of tetrahedral amorphous carbon prepared by vacuum arc deposition

The structural, optical, electrical and physical properties of amorphous carbon deposited from the filtered plasma stream of a vacuum arc were investigated. The structure was determined by electron diffraction, neutron diffraction and energy loss spectroscopy and the tetrahedral coordination of the material was confirmed. The measurements gave a nearest neighbour distance of 1.53 Å, a bond angle of 110 and a coordination number of four. A model is proposed in which the compressive stress generated in the film by energetic ion impact produces pressure and temperature conditions lying well inside the region of the carbon phase diagram within which diamond is stable. The model is confirmed by measurements of stress and plasmon energy as a function of ion energy. The model also predicts the formation of sp2-rich materials on the surface owing to stress relaxation and this is confirmed by a study of the surface plasmon energy. Some nuclear magnetic resonance, infrared and optical properties are reported and the behaviour of diodes using tetrahedral amorphous carbon is discussed. © 1991.

The non-local nature of structure functions

Kolmogorov's two-thirds, ((Δv) 2) ∼ e 2/ 3r 2/ 3, and five-thirds, E ∼ e 2/ 3k -5/ 3, laws are formally equivalent in the limit of vanishing viscosity, v → 0. However, for most Reynolds numbers encountered in laboratory scale experiments, or numerical simulations, it is invariably easier to observe the five-thirds law. By creating artificial fields of isotropic turbulence composed of a random sea of Gaussian eddies whose size and energy distribution can be controlled, we show why this is the case. The energy of eddies of scale, s, is shown to vary as s 2/ 3, in accordance with Kolmogorov's 1941 law, and we vary the range of scales, γ = s max/s min, in any one realisation from γ = 25 to γ = 800. This is equivalent to varying the Reynolds number in an experiment from R λ = 60 to R λ = 600. While there is some evidence of a five-thirds law for g > 50 (R λ > 100), the two-thirds law only starts to become apparent when g approaches 200 (R λ ∼ 240). The reason for this discrepancy is that the second-order structure function is a poor filter, mixing information about energy and enstrophy, and from scales larger and smaller than r. In particular, in the inertial range, ((Δv) 2) takes the form of a mixed power-law, a 1+a 2r 2+a 3r 2/ 3, where a 2r 2 tracks the variation in enstrophy and a 3r 2/ 3 the variation in energy. These findings are shown to be consistent with experimental data where the polution of the r 2/ 3 law by the enstrophy contribution, a 2r 2, is clearly evident. We show that higherorder structure functions (of even order) suffer from a similar deficiency.

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

Room-temperature remote-plasma sputtering of c-axis oriented zinc oxide thin films

Highly c-axis oriented ZnO films have been deposited at room temperature with high rates (∼50 nm·min -1) using an innovative remote plasma sputtering configuration, which allows independent control of the plasma density and the sputtering ion energy. The ZnO films deposited possess excellent crystallographic orientation, high resistivity (>10 9 Ω·m), and exhibit very low surface roughness. The ability to increase the sputtering ion energy without causing unwanted Ar + bombardment onto the substrate has been shown to be crucial for the growth of films with excellent c-axis orientation without the need of substrate heating. In addition, the elimination of the Ar + bombardment has facilitated the growth of films with very low defect density and hence very low intrinsic stress (100 MPa for 3 μm-thick films). This is over an order of magnitude lower than films grown with a standard magnetron sputtering system. © 2012 American Institute of Physics.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Detailed design of242mAm breeding in pressurized water reactors

There is growing interest in the use of 242mAm as a nuclear fuel. Because of its very high thermal fission cross section and its large number of neutrons released per fission, it can be used for various unique applications, such as space propulsion, medical applications, and compact energy sources. Since the thermal absorption cross section of 242mAm is very high, the best way to obtain 242mAm is by the capture of fast or epithermal neutrons in 241Am. However, fast spectrum reactors are not readily available. In this paper, we explore the possibility of producing 242mAm in existing pressurized water reactors (PWRs) with minimal interference in reactor performance. As suggested in previous studies on the subject, the 242mAm breeding targets are shielded with strong thermal absorbers in order to suppress the thermal neutron flux that causes 242mAm destruction. Since 242mAm enrichment within the Am target mainly depends on the neutron energy distribution, which in turn depends on the Am target thickness and on the neutron filter cutoff energy (thermal absorber type), this unique Am target design was developed. In our study, Cd, Sm, and Gd were considered as thermal neutron filters, as suggested by Cesana et al. The most favorable results were obtained by irradiating Am targets covered either with Gd or Cd. In these cases, up to 8.65% enrichment of 242mAm is obtained after 4.5 yr (three successive PWR fuel cycles) of irradiation. It was also found that significant quantities [up to 1.3 kg/GW (electric)-yr] of 242mAm can be obtained in PWR reactors without notable interference with reactor performance. However, in order to maintain the original fuel cycle length, the enrichment of the driver (UO2) fuel must be increased by ∼1%, raised from the conventional 4.5 to 5.5%, depending on the thermal neutron filter used. The most important reactivity feedback coefficients for fuel assemblies containing the 242mAm breeding targets were evaluated and found to be close to those of a standard PWR. Another product of neutron capture in the 241Am reaction is 238Pu. It was found that in a typical 1000 MW (electric) PWR core with one-third of the fuel assemblies containing 241Am targets, up to 15.1 kg of 238Pu enriched to 80% can be produced per year.

Direct temperature mapping of nanoscale plasmonic devices.

Side by side with the great advantages of plasmonics in nanoscale light confinement, the inevitable ohmic loss results in significant joule heating in plasmonic devices. Therefore, understanding optical-induced heat generation and heat transport in integrated on-chip plasmonic devices is of major importance. Specifically, there is a need for in situ visualization of electromagnetic induced thermal energy distribution with high spatial resolution. This paper studies the heat distribution in silicon plasmonic nanotips. Light is coupled to the plasmonic nanotips from a silicon nanowaveguide that is integrated with the tip on chip. Heat is generated by light absorption in the metal surrounding the silicon nanotip. The steady-state thermal distribution is studied numerically and measured experimentally using the approach of scanning thermal microscopy. It is shown that following the nanoscale heat generation by a 10 mW light source within a silicon photonic waveguide the temperature in the region of the nanotip is increased by ∼ 15 °C compared with the ambient temperature. Furthermore, we also perform a numerical study of the dynamics of the heat transport. Given the nanoscale dimensions of the structure, significant heating is expected to occur within the time frame of picoseconds. The capability of measuring temperature distribution of plasmonic structures at the nanoscale is shown to be a powerful tool and may be used in future applications related to thermal plasmonic applications such as control heating of liquids, thermal photovoltaic, nanochemistry, medicine, heat-assisted magnetic memories, and nanolithography.

A new way of uniform splitting of the optical power by directional coupling between the photonic crystal waveguides

Directional coupler can be constructed by putting multiple photonic crystal waveguides together. The propagation of the optical field entering this system symmetrically was analysed numerically according to self-imaging principle. On the basis of this structure, ultracompact multiway beam splitter was designed and the ones with three and four output channels were discussed in details as examples. By simply tuning the effective refractive index of two dielectric rods in the coupler symmetrically to induce the redistribution of the power of the optical field, uniform or free splitting can be achieved. Compared with the reported results, this way is simpler, more feasible and more efficient and has extensive practical value in future photonic integrated circuits.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.