917 resultados para High-speed camera


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Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel's data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser(VCSEL) array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable (SFP) packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.

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In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

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High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

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Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-chiGechi/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/ALAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.

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In this paper a new half-flash architecture for high speed video ADC is presented. Based on a high speed single-way analog switch circuit, this architecture effectively reduces the number of elements. At the same lime no sacrifice of speed is needed compared with the normal half-flash structure.

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This paper introduces a new highspeed single-way analog switch which has both highspeed high-resolution mono-direction analog transmission gate function and high-speed digital logic gate function with normal bipolar technology. The analysis of static and transient switching performances as an analog transmission gate is emphasized in the paper. In order to reduce the plug-in effect on high-speed high-resolution systems, an optimum design scheme is also given. This scheme is to achieve accelerated dynamic response with very low bias power dissipation. The analysis of PSPICE simulation as well as the circuit test results confirms the feasibility of the scheme. Now, the circuit has been applied effectively to the designs of novel highspeed A/D and D/A converters.

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Supercritical fluid extraction (SFE) was used to extract homoisoflavonoids from Ophiopogon japonicus (Thunb.) Ker-Gawler. The optimization of parameters was carried out using an orthogonal test L-9 (3)(4) including pressure, temperature, dynamic extraction time and the amount of modifier. The process was then scaled up by 100 times with a preparative SFE system under the optimized conditions of 25 MPa, 55 degrees C, 4.0 h and 25% methanol as a modifier. Then crude extracts were separated and purified by high-speed counter-current chromatography (HSCCC) with a two-phase solvent system composed of n-hexane/ethyl acetate/methanol/ACN/water (1.8:1.0:1.0:1.2:1.0 v/v). There three homoisoflavonoidal compounds including methylophiopogonanone A 6-aldehydo-isoophiopogonone A, and 6-formyl-isoophiopogonanone A, were successfully isolated and purified in one step. The collected fractions were analyzed by HPLC. In each operation, 140 mg crude extracts was separated and yielded 15.3 mg of methylophiopogonanone A (96.9% purity), 4.1 mg of 6-aldehydo-isoophiopogonone A (98.3% purity) and 13.5 mg of 6-formyl-isoophiopogonanone A (97.3% purity) respectively. The chemical structure of the three homoisoflavonoids are identified by means of ESI-MS and NMR analysis.

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High-speed counter-current chromatography (HSCCC) technique in semi-preparative scale has been successfully applied to the separation of bioactive flavonoid compounds, liquiritigenin and isoliquiritigenin in one step from the crude extract of Glycyrrhiza uralensis Risch. The HSCCC was performed using a two-phase solvent system composed of n-hexane-ethyl acetate-methanol-acetonitrile-water (2:2:1:0.6:2, v/v). Yields of liquiritigenin (98.9% purity) and isoliquiritigenin (98.3% purity) obtained were 0.52% and 0.32%. Chemical structures of the purified liquiritigenin and isoliquiritigenin were identified by electrospray ionization-MS (ESI-MS) and NMR analysis. (c) 2005 Published by Elsevier B.V.

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With using short capillary column packed with porous and non-porous ODS stationary phases, high speed separation of 6 neutral aromatic compounds within 36 s by capillary electrochromatography (CEC) has been performed. Good reproducibility of the migration times for those solutes in high speed CEC was observed with RSD less than 1%. Both the linear velocity of EOF and the current linearly increases with the applied voltage, which means that the thermal effect by Joule heating was small. However, the capacity factor of solutes was found to decrease with the increase of the applied voltage, which was caused by the fact that about several seconds needed for the increase of voltage from 0 to applied value on a commercial CE instrument made larger contributions to the migration times of the early eluted compounds than those of lately eluted ones during high speed CEC, and voltage effect would increase with the higher applied voltage used. The linear relationship between the logarithm of capacity factor and the number of carbon for homologous compounds was observed, and positive value of slope means that the hydrophobicity of solutes is one of the main contribution factors to retention in high speed CEC packed with ODS stationary phases.

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As multiprocessor system size scales upward, two important aspects of multiprocessor systems will generally get worse rather than better: (1) interprocessor communication latency will increase and (2) the probability that some component in the system will fail will increase. These problems can prevent us from realizing the potential benefits of large-scale multiprocessing. In this report we consider the problem of designing networks which simultaneously minimize communication latency while maximizing fault tolerance. Using a synergy of techniques including connection topologies, routing protocols, signalling techniques, and packaging technologies we assemble integrated, system-level solutions to this network design problem.

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A new mesoporous sphere-like SBA-15 silica was synthesized and evaluated in terms of its suitability as stationary phases for CEC. The unique and attractive properties of the silica particle are its submicrometer particle size of 400 nm and highly ordered cylindrical mesopores with uniform pore size of 12 nm running along the same direction. The bare silica particles with submicrometer size have been successfully employed for the normal-phase electrochromatographic separation of polar compounds with high efficiency (e.g., 210 000 for thiourea), which is matched well with its submicrometer particle size. The Van Deemeter plot showed the hindrance to mass transfer because of the existence of pore structure. The lowest plate height of 2.0 mu m was obtained at the linear velocity of 1.1 mm/s. On the other hand, because of the relatively high linear velocity (e.g., 4.0 mm/s) can be generated, high-speed separation of neutral compounds, anilines, and basic pharmaceuticals in CEC with C-18-modified SBA-15 silica as stationary phases was achieved within 36, 60, and 34 s, respectively.

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Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

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In the last decade, we have witnessed the emergence of large, warehouse-scale data centres which have enabled new internet-based software applications such as cloud computing, search engines, social media, e-government etc. Such data centres consist of large collections of servers interconnected using short-reach (reach up to a few hundred meters) optical interconnect. Today, transceivers for these applications achieve up to 100Gb/s by multiplexing 10x 10Gb/s or 4x 25Gb/s channels. In the near future however, data centre operators have expressed a need for optical links which can support 400Gb/s up to 1Tb/s. The crucial challenge is to achieve this in the same footprint (same transceiver module) and with similar power consumption as today’s technology. Straightforward scaling of the currently used space or wavelength division multiplexing may be difficult to achieve: indeed a 1Tb/s transceiver would require integration of 40 VCSELs (vertical cavity surface emitting laser diode, widely used for short‐reach optical interconnect), 40 photodiodes and the electronics operating at 25Gb/s in the same module as today’s 100Gb/s transceiver. Pushing the bit rate on such links beyond today’s commercially available 100Gb/s/fibre will require new generations of VCSELs and their driver and receiver electronics. This work looks into a number of state‐of-the-art technologies and investigates their performance restraints and recommends different set of designs, specifically targeting multilevel modulation formats. Several methods to extend the bandwidth using deep submicron (65nm and 28nm) CMOS technology are explored in this work, while also maintaining a focus upon reducing power consumption and chip area. The techniques used were pre-emphasis in rising and falling edges of the signal and bandwidth extensions by inductive peaking and different local feedback techniques. These techniques have been applied to a transmitter and receiver developed for advanced modulation formats such as PAM-4 (4 level pulse amplitude modulation). Such modulation format can increase the throughput per individual channel, which helps to overcome the challenges mentioned above to realize 400Gb/s to 1Tb/s transceivers.