896 resultados para HAFNIUM-BORON


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Four diboron-contained ladder-type pi-conjugated compounds 1-4 were designed and synthesized. Their thermal, photophysical, electrochemical properties, as well as density functional theory calculations, were fully investigated. The single crystals of compounds 1 and 3 were grown, and their crystal structures were determined by X-ray diffraction analysis. Both compounds have a ladder-type g-conjugated framework. Compounds I and 2 possess high thermal stabilities, moderate solid-state fluorescence quantum yields, as well as stable redox properties, indicating that they are possible candidates for emitters and charge-transporting materials in electroluminescent (EL) devices. The double-layer device with the configuration of [ITO/NPB (40 nm)/1 or 2 (70 nm)/LiF (0.5 nm)/Al (200 nm)] exhibited good EL performance with the maximum brightness exceeding 8000 cd/m(2).

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Equilibrium geometries, vibrational frequencies and dissociation energies of hafnium dimer and trimer were studied by density functional methods B3LYP, BLYP, B3PW91, BHLYP, BP86, B3P86, mPW1PW91 and PBE1PBE. The results indicate that singlet is the ground state both for hafnium dimer and for trimer. For hafnium dimer, the calculated bond distance is less sensitive to the methods used. Except at BHLYP level, the calculated vibrational frequency is comparable to the experimental value. For hafnium trimer, equilateral triangle with D-3h symmetry is slightly favored compared with isosceles triangle with C-2v, symmetry except at BHLYP level. This conclusion is in agreement with experiment in which the ground state of Hf-3 is fluxional and low-spin or closed shell is preferred.

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A bright blue boron complex BPh2(pybm) containing 2-(2-pyridyl)benzimidazole ligand was designed and synthesized by using N, N-bidentate ligand instead of N, O-bidentate one such as 8-quinolinol. For three-layer LED devices with the configuration of ITO/NPB/BPh2(pybm)/Alq(3)/LiF/Al, the white light emission covering the whole visible region from 400 to 750 nm with the maximum brightness of 110 cd/m(2) and the luminous efficiency of 0.8 cd/A was observed.

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Boron removal is a critical issue in the production of drinking water and of ultra-pure water in the electronics industry. Boron rejection in a RO process is typically in the range of 40-60%. The objective of this study was to distinguish the factor contributing to enhanced boron rejection in reclamation of a spent rinse stream from a plating operation. The effects of different known components used in the feed on boron removal were investigated in the laboratory. The results indicated that glycolic acid and antifoulants could not individually enhance boron rejection in a RO process. A high boron rejection of 95% was achieved as the concentration of iron in the feed was 10 times higher than that of boron, which might be due to formation of a complex between iron oxide and boron. The finding was confirmed in a pilot study.

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Locating hexagonal and cubic phases in boron nitride using wavelength-selective optically detected x-ray absorption spectroscopy, D.A. Evans, A.R. Vearey-Roberts, N.R.J. Poolton Appl Phys Lett 89, (2006) 161107

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Poolton, Nigel; Towlson, B.M.; Hamilton, B.; Evans, D.A., (2006) 'Synchrotron-laser interactions in hexagonal boron nitride: an examination of charge trapping dynamics at the boron K-edge', New Journal of Physics 8 pp.76 RAE2008