Protection and Switching-Aid Networks for Transistor Bridge Inverters

The present trend in the industry is towards the use of power transistors in the development of efficient Pulsewidth Modulated (PWM) inverters, because of their operation at high frequency, simplicity of turn-off, and low commutation losses compared to the technology using thyristors. But the protection of power transistors, minimization of switching power loss, and design of base drive circuit are very important for a reliable operation of the system. The requirements, analysis, and a simplified procedure for calculation of the switching-aid network components are presented. The transistor is protected against short circuit using a modified autoregulated and autoprotection drive circuit. The experimental results show that the switching power loss and voltage stress in the device can be reduced by suitable choice of the switching-aid network component values.

Aqueous colloidal stability evaluated by zeta potential measurement and resultant TiO2 for superior photovoltaic performance

Controlling the morphological structure of titanium dioxide (TiO 2) is crucial for obtaining superior power conversion efficiency for dye-sensitized solar cells. Although the sol-gel-based process has been developed for this purpose, there has been limited success in resisting the aggregation of nanostructured TiO2, which could act as an obstacle for mass production. Herein, we report a simple approach to improve the efficiency of dye-sensitized solar cells (DSSC) by controlling the degree of aggregation and particle surface charge through zeta potential analysis. We found that different aqueous colloidal conditions, i.e., potential of hydrogen (pH), water/titanium alkoxide (titanium isopropoxide) ratio, and surface charge, obviously led to different particle sizes in the range of 10-500 nm. We have also shown that particles prepared under acidic conditions are more effective for DSSC application regarding the modification of surface charges to improve dye loading and electron injection rate properties. Power conversion efficiency of 6.54%, open-circuit voltage of 0.73 V, short-circuit current density of 15.32 mA/cm2, and fill factor of 0.73 were obtained using anatase TiO 2 optimized to 10-20 nm in size, as well as by the use of a compact TiO2 blocking layer.

Neural network approach for fault location in unbalanced distribution networks with limited measurements

This paper presents an Artificial Neural Network (ANN) approach for locating faults in distribution systems. Different from the traditional Fault Section Estimation methods, the proposed approach uses only limited measurements. Faults are located according to the impedances of their path using a Feed Forward Neural Networks (FFNN). Various practical situations in distribution systems, such as protective devices placed only at the substation, limited measurements available, various types of faults viz., three-phase, line (a, b, c) to ground, line to line (a-b, b-c, c-a) and line to line to ground (a-b-g, b-c-g, c-a-g) faults and a wide range of varying short circuit levels at substation, are considered for studies. A typical IEEE 34 bus practical distribution system with unbalanced loads and with three- and single- phase laterals and a 69 node test feeder with different configurations are considered for studies. The results presented show that the proposed approach of fault location gives close to accurate results in terms of the estimated fault location.

A Comparative Study of the Effect of Metallic Au and ReO3 Nanoparticles on the Performance of Silicon Solar Cells

The influence of gold (similar to 35 nm diameter) as well as ReO3 (similar to 17 nm diameter) nanoparticles placed atop silicon photovoltaic devices on absorption and photocurrent generation has been investigated. The nanoparticles improve the power transmission into the semiconductor and consequently, the photocurrent response at wavelengths corresponding to plasmon absorption. An increase in short circuit current up to 4.5% under simulated solar irradiation was observed with the ReO3 nanoparticles, while the gold nanoparticles showed enhancements up to 6.5%. The increase in photocurrent is observed at wavelengths corresponding to the maxima in the surface plasmon resonance absorption spectra. (C) 2010 The Japan Society of Applied Physics

Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.

V-CE Sensing for IGBT Protection in NPC Three Level Converters-Causes For Spurious Trippings and Their Elimination

Neutral point clamped (NPC), three level converters with insulated gate bipolar transistor devices are very popular in medium voltage, high power applications. DC bus short circuit protection is usually done, using the sensed voltage across collector and emitter (i.e., V-CE sensing), of all the devices in a leg. This feature is accommodated with the conventional gate drive circuits used in the two level converters. The similar gate drive circuit, when adopted for NPC three level converter protection, leads to false V-CE fault signals for inner devices of the leg. The paper explains the detailed circuit behavior and reasons, which result in the occurrence of such false V-CE fault signals. This paper also illustrates that such a phenomenon shows dependence on the power factor of the supplied three-phase load. Finally, experimental results are presented to support the analysis. It is shown that the problem can be avoided by blocking out the V-CE sense fault signals of the inner devices of the leg.

Study of voltage collapse at converter bus in asynchronous MTDC-AC systems

This paper presents the analysis and study of voltage collapse at any converter bus in an AC system interconnected by multiterminal DC (MTDC) links. The analysis is based on the use of the voltage sensitivity factor (VSF) as a voltage collapse proximity indicator (VCPI). In this paper the VSF is defined as a matrix which is applicable to MTDC systems. The VSF matrix is derived from the basic steady state equations of the converter, control, DC and AC networks. The structure of the matrix enables the derivation of some of the basic properties which are generally applicable. A detailed case study of a four-terminal MTDC system is presented to illustrate the effects of control strategies at the voltage setting terminal (VST) and other terminals. The controls considered are either constant angle, DC voltage, AC voltage, reactive current and reactive power at the VST and constant power or current at the other terminals. The effect of the strength of the AC system (measured by short circuit ratio) on the VSF is investigated. Several interesting and new results are presented. An analytical expression for the self VSF at VST is also derived for some specific cases which help to explain the number of transitions in VSF around the critical values of SCR.

Dynamic analysis of voltage instability in AC-DC systems

This paper presents the analysis and study of voltage collapse at any converter bus in A C-DC systems considering the dynamics of DC system. The problem of voltage instability is acute when HVDC links are connected to weak AC systems, the strength determined by short circuit ratio (SCR) at the converter bus. The converter control strategies are important in determining voltage instability. Small signal analysis is used to identify critical modes and evaluate the effect of AC system strength and control parameters. A sample two-terminal DC system is studied and the results compared with those obtained from static analysis. Also, the results obtained from small signal analysis are validated with nonlinear simulation.

A low power, process invariant keeper design for high speed dynamic logic circuits

A low power keeper circuit using the concept of rate sensing has been proposed. The proposed technique reduces the amount of short circuit power dissipation in the domino gate by 70% compared to the conventional keeper technique. Also the total power-delay product is 26% lower compared to the previously reported techniques. The process tracking capability of the design enables the domino gate to achieve uniform delay across different process corners. This reduces the amount of short circuit power dissipation that occurs in the cascaded domino gates by 90%. The use of the proposed technique in the read path of a register file reduces the energy requirement by 26% as compared to the other keeper techniques. The proposed technique has been prototyped in 130nm CMOS technology.

Dye sensitized solar cell based on platinum decorated multiwall carbon nanotubes as catalytic layer on the counter electrode

In this study we have employed multiwall carbon nanotubes (MWCNT), decorated with platinum as catalytic layer for the reduction of tri-iodide ions in dye sensitized solar cell (DSSC). MWCNTs have been prepared by a simple one step pyrolysis method using ferrocene as the catalyst and xylene as the carbon source. Platinum decorated MWCNTs have been prepared by chemical reduction method. The as prepared MWCNTs and Pt/MWCNTs have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In combination with a dye adsorbed TiO(2) photoanode and an organic liquid electrolyte, Pt/MWCNT composite showed an enhanced short circuit current density of 16.12 mA/cm(2) leading to a cell efficiency of 6.50% which is comparable to that of Platinum. (C) 2011 Elsevier Ltd. All rights reserved.

Determination of the follow current in surge diverters

Using a suitable mathematical model, computations of power/follow current in surge diverters (lightning arresters) have been made from the known short-circuit capacity of the power-frequency source and the nonlinear resistor characteristics. Also the effect of the initiation angle is studied. Typical verifications with the available data have been carried out. The influence of arc drop in the surge-diverter spark gap is neglected.

Gate Drive Card for High Power Three Phase PWM Converters

Gate driver is an integral part of every power converter, drives the power semiconductor devices and also provides protection for the switches against short-circuit events and over-voltages during shut down. Gate drive card for IGBTs and MOSFETs with basic features can be designed easily by making use of discrete electronic components. Gate driver ICs provides attractive features in a single package, which improves reliability and reduces effort of design engineers. Either case needs one or more isolated power supplies to drive each power semiconductor devices and provide isolation to the control circuitry from the power circuit. The primary emphasis is then to provide simplified and compact isolated power supplies to the gate drive card with the requisite isolation strength and which consumes less space, and for providing thermal protection to the power semiconductor modules for 3-� 3 wire or 4 wire inverters.

Growth and photovoltaic performance of SnS quantum dots

Tin sulphide (SnS) quantum dots of size ranging from 2.4 to 14.4 nm are prepared by chemical precipitation method in aqueous media. Growth of the SnS particles is monitored by controlling the deposition time. Both XRD and SAED patterns confirm that the particles possess orthorhombic structure. The uncapped SnS particles showed secondary phases like Sn2S3 and SnS2 which is visible in the SAED pattern. From the electrochemical characterization. HOMO-LUMO levels of both TiO2 and SnS are determined and the band alignment is found to be favorable for electron transfer from SnS to TiO2. Moreover, the HOMO-LUMO levels varied for different particle sizes. Solar cell is fabricated by sensitizing porous TiO2 thin film with SnS QDs. Cell structure is characterized with and without buffer layer between FTO and TiO2. Without the buffer layer, cell showed an open circuit voltage (V-oc) of 504 mV and short circuit current density (J(sc)) of 2.3 mA/cm(2) under AM1.5 condition. The low fill factor of this structure (15%) is seen to be increased drastically to 51%, on the incorporation of the buffer layer. The cell characteristics are analyzed using two different size quantum dots. (C) 2012 Elsevier B.V. All rights reserved.

PEO|Sncl(2)|PANI composites: as an electrolyte in solid-state battery

Solid-state polymer electrolytes possess high conductivity and have advantages compared with their liquid counterparts. The polyethylene oxide (PEO)-based polymer is a good candidate for this purpose. The PEO/SnCl2/polyaniline composite (PSP composites) at different weight percentages were prepared in anhydrous acetonitrile media. Structural studies were carried out of the prepared composites by X-ray diffraction, Fourier transmission infrared spectroscopy, and surface morphology by scanning electron microscopy. The sigma (dc) was carried out by a two-probe method, and it is found that the conductivity increases with an increase in temperature. The temperature-dependent conductivity of the composites exhibits a typical semi-conducting behavior and hence can be explained by the 1D variable range hopping model proposed by Mott. The electrochemical cell parameters for battery applications at room temperature have also been determined. The samples are fabricated for battery application in the configuration of Na: (PSP): (I-2 + C + sample), and their experimental data are measured using Wagner's polarization technique. The cell parameters result in an open-circuit voltage of 0.83 V and a short-circuit current of 912 mu A for PSP (70:30:10) composite. Hence, these composites can be used in polymer electrolyte studies.

Effect of iodine concentration on the photovoltaic properties of dye sensitized solar cells for various I-2/LiI ratios

In the present study, the effect of iodine concentration on the photovoltaic properties of dye sensitized solar cells (DSSC) based on TiO2 nanoparticles for three different ratios of lithium iodide (LiI) and iodine (I-2) has been investigated. The electron transport properties and interfacial recombination kinetics have been evaluated by electrochemical impedance spectroscopy (EIS). It is found that increasing the concentration of lithium iodide for all ratios of iodine and lithium iodide decreases the open-circuit voltage (V-oc) whereas short circuit current density (J(sc)) and fill factor (FF) shows improvement. The reduction in V-oc and increment in J(sc) is ascribed to the higher concentration of absorptive Li+ cations which shifts the conduction band edge of TiO2 positively. The increase in FF is due to the reduction in electron transport resistance (R-omega) of the cell. In addition for all the ratios of LiI/I-2 increasing the concentration of I-2 decreases the V-oc which is attributed to the increased recombination with tri-iodide ions (I-3(-)) as verified from the low recombination resistance (R-k) and electron lifetime (tau) values obtained by EIS analysis. (C) 2012 Elsevier Ltd. All rights reserved.