Diffusion-driven formation of MoS2 nanotube bundles containing MoS2 nanopods

MoS2 nanotube bundles along with embedded nested fullerenes were formed in a gas phase reaction of molybdenum carbonyl and H2S gas with the assistance of I2. The amorphous Mo-S-I intermediates obtained through quenching a modified MOCVD reaction in a large temperature gradient were annealed at elevated temperature in an inert atmosphere. Under the influence of the iodine the amorphous precursor formed a surface film with an enhanced mobility of the molybdenum and sulfur components. Point defects within the MoS2 layers combined with the enhanced surface diffusion lead to a scrolling of the inherently instable MoS2 lamellae.

Hybrid chalcogenide nanoparticles : 2D-WS2 nanocrystals inside nested WS2 fullerenes

The MOCVD assisted formation of nested WS2 inorganic fullerenes (IF-WS2) was performed by enhancing surface diffusion with iodine, and fullerene growth was monitored by taking TEM snapshots of intermediate products. The internal structure of the core-shell nanoparticles was studied using scanning electron microscopy (SEM) after cross-cutting with a focused ion beam (FIB). Lamellar reaction intermediates were found occluded in the fullerene particles. In contrast to carbon fullerenes, layered metal chalcogenides prefer the formation of planar, plate-like structures where the dangling bonds at the edges are stabilized by excess S atoms. The effects of the reaction and annealing temperatures on the composition and morphology of the final product were investigated, and the strength of the WS2 shell was measured by intermittent contact-mode AFM. The encapsulated lamellar structures inside the hollow spheres may lead to enhanced tribological activities.

Nanocrystalline Janus films of inorganic materials prepared at the liquid-liquid interface

The interface between toluene and water has been employed to prepare ultrathin Janus nanocrystalline films of metal oxides, metal chalcogenides and gold, wherein the surface on the organic-side is hydrophobic and the aqueous-side is hydrophilic. We have changed the nature of the metal precursor or capping agent in the organic layer to increase the hydrophobicity. The strategy employed for this purpose is to increase the length of the alkane chain in the precursor or use a perfluroalkane derivative as precursor or as a capping agent. The hydrophobicity and hydrophilicity of the Janus films have been determined by contact angle measurements. The morphology of hydrophobic and hydrophilic sides of the film have been examined by field emission scanning electron microscopy.

Bismuth-doped amorphous-germanium sulfidesemiconductors

A study of the effect of bismuth dopant on the electronic transport properties of the amorphous semiconductors Ge20S80-xBix under high pressure (up to 140 kbar) has been carried out down to liquid-nitrogen temperature. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy at all pressures and for all compositions. A remarkable resemblance between the electronic conduction process, x-ray diffraction studies, and differential thermal analysis results is revealed. It is proposed that the n-type conduction in germanium chalcogenides doped with a large Bi concentration is due to the effect of Bi dopants on the positive correlation energy defects present in germanium chalcogenides. The impurity-induced chemical modification of the network creates a favorable environment for such an interaction.

Metal Auger Intensity Ratios in Transition Metals and Their Compounds

Metal Auger intensity ratios of the type Z(CVV)/I(CC'V) and Z(CVV)/Z(CC'C"), where C, C' and C" denote core levels and V stands for a valence level, are shown to increase progressively with the number of valence electrons in the metal in the case of second-row transition metals and their oxides. Metal Auger intensity ratios in chalcogenides of transition metals can be correlated by taking the effective atomic charge on the metal into consideration. The possible use of metal Auger intensity ratios in the study of surface oxidation of second-row transition metals is illustrated in the case of zirconium.

Correlation Between The Stability Of Carbonates In Ternary Ln2o3-H2o-Co2 Hydrothermal Systems And Lanthanide Systematics

Phase diagrams for ternary Ln2O3-H2O-CO2 systems for the entire lanthanide series (except promethium) were studied at temperatures in the range 100–950 °C and pressures up to 3000 bar. The phase diagrams obtained for the heavier lanthanides are far more complex, with the appearance of a number of stable carbonate phases. New carbonates isolated from lanthanide systems (Ln ≡ Tm, Yb, Lu) include Ln6(OH)4(CO3)7, Ln4(OH)6-(CO3)3, Ln2O(OH)2CO3, Ln6O2(OH)8(CO3)3 and Ln12O7(OH)10(CO3)6. Stable carbonate phases common to all the lighter lanthanides are hexagonal LnOHCO3 and hexagonal Ln2O2CO3. Ln2(CO3)3• 3H2O is stable from samarium onwards and orthorhombic LnOHCO3 is stable from gadolinium onwards. On the basis of the appearance of stable carbonates, four different groups of lanthanides were established: lanthanum to neodymium, promethium to europium, terbium to erbium and thulium to lutetium. Gadolinium is the connecting element between groups II and III. This is in accordance with the tetrad classification for f transition elements.

Study of solids and surfaces by photoacoustic spectroscopy

Photoacoustic spectroscopy has been employed to study the electronic spectra of a variety of solids. The systems studied include powders of intensely coloured dyes, amorphous chalcogenides and oxide gels besides polycrystalline samples of several oxide materials. Surface sensitivity of the technique has been examined by study of dye adsorption on oxide surfaces and determination of surface areas of active oxides. Acidic and basic sites on catalyst surfaces have also been estimated by this technique.

Atomic Layer Deposition of Electroluminescent ZnS, SrS, and BaS Thin Films

The light emitted by flat panel displays (FPD) can be generated in many different ways, such as for example alternating current thin film electroluminescence (ACTFEL), liquid crystal display (LCD), light emitting diode (LED), or plasma display panel (PDP) technologies. In this work, the focus was on ACTFEL devices and the goal was to develop new thin film processes for light emitting materials in ACTFEL devices. The films were deposited with the atomic layer deposition (ALD) method, which has been utilized in the manufacturing of ACTFEL displays since the mid-1980s. The ALD method is based on surface-controlled self-terminated reactions and a maximum of one layer of the desired material can be prepared during one deposition cycle. Therefore, the film thickness can be controlled simply by adjusting the number of deposition cycles. In addition, both large areas and deep trench structures can be covered uniformly. During this work, new ALD processes were developed for the following thin film materials: BaS, CuxS, MnS, PbS, SrS, SrSe, SrTe, SrS1-xSex, ZnS, and ZnS1-xSex. In addition, several ACTFEL devices were prepared where the light emitting material was BaS, SrS, SrS1-xSex, ZnS, or ZnS1-xSex thin film that was doped with Ce, Cu, Eu, Mn, or Pb. The sulfoselenide films were made by substituting the elemental selenium for sulfur on the substrate surface during film deposition. In this way, it was possible to replace a maximum of 90% of the sulfur with selenium, and the XRD analyses indicated that the films were solid solutions. The polycrystalline BaS, SrS, and ZnS thin films were deposited at 180-400, 120-460, and 280-500 °C, respectively, and the processes had a wide temperature range where the growth rate of the films was independent of the deposition temperature. The electroluminescence studies showed that the doped sulfoselenide films resulted in low emission intensity. However, the emission intensities and emission colors of the doped SrS, BaS, and ZnS films were comparable with those found in earlier studies. It was also shown that the electro-optical properties of the different ZnS:Mn devices were different as a consequence of different ZnS:Mn processes. Finally, it was concluded that because the higher deposition temperature seemed to result in a higher emission intensity, the thermal stability of the reactants has a significant role when the light emitting materials of ACTFEL devices are deposited with the ALD method.

Photoacoustic spectroscopy of solids and surfaces

After briefly reviewing the theory and instrumentation, results from a variety of experiments carried out by the authors on the photoacoustic spectroscopy of solids and surfaces by employing an indigenous spectrometer are discussed in the light of the recent literature. Some of the important findings discussed are, phase angle spectroscopy, anomalous behaviour of monolayers, unusual frequency dependence in small cell volumes, spectra of a variety of solids including amorphous arsenic chalcogenides, photoacoustic detection of phase transitions and determination of surface areas and surface acidities of oxides. Recent developments such as piezoelectric photoacoustic spectroscopy, depth profiling and subsurface imaging are also presented.

Microwave modulation by amorphous-semiconductor switches

Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.

Eu2+ luminescence in MAl3BO7 aluminoborates (M=Ca, Sr, Ba)

Three new aluminoborates having the composition MAl3BO7, where M = Ca,Sr or Ba, have been prepared. X-ray diffraction data indicate that all the phases are monoclinic, with close structural similarity to the meta stable aluminate, SrAl4O7. These aluminoborates are good host lattices for Eu2+ luminescence. The emission spectra show multiple bands in the blue region, corresponding to two inequivalent sites in each case, with one of them having quantum efficiency greater-than or equivalent to 75%. In the case of SrAl3BO7:Eu2+, the d–f band emission dominates at 300 K whereas at 77 K both d–f band and f–f line emissions are observed. Efficient Eu2+→Mn2+ energy transfer is observed in MAl3BO7 leading to strong green emission of Mn2+in the tetrahedral sites.aluminoborates; europium

Liquid alloy semiconductors revisited - Discussion

In 1990 Enderby and Barnes reviewed the electrical properties of liquid alloys which show features associated with semiconducting behaviour. They proposed an empirical classification scheme based on the notion that some liquid semiconductors are characterized by a finite gap in σ (E), the energy-dependent conductivity (narrow definition), whereas in others σ (E) is continuous (broad definition). Interesting behaviour occurs for systems at the narrow/broad boundary and further analysis of these liquid alloys will form the subject matter of this paper. Particular attention will be focused on liquid silver chalcogenides as these offer a severe test of current theories.

Unified approach to the constraint counting theory of glasses

An approach to the constraint counting theory of glasses is applied to many glass systems which include an oxide, chalcohalide, and chalcogenides. In this, shifting of the percolation threshold due to noncovalent bonding interactions in a basically covalent network and other recent extensions of the theory appear natural. This is particularly insightful and reveals that the chemical threshold signifies another structural transition along with the rigidity percolation threshold, thus unifying these two seemingly disparate toplogical concepts. [S0163-1829(99)11441-3].

Nanotubes of the disulfides of groups 4 and 5 metals

The layered chalcogenides, having structures analogous to graphite, are known to be unstable toward bending and show high propensity to form curved structures, thus eliminating dangling bonds at the edges. Since the discovery of fullerene and nanotube structures of WS2 and MoS2 by Tenne et al. [1-3], there have been attempts to prepare and characterize nanotubes of other layered dichalcogenides with structures analogous to MoS2. Nanotubes of MoS2 and WS2 were prepared by Tenne et al. by reducing the corresponding oxides to the suboxides followed by heating in an atmosphere of forming gas (5 % H-2 + 95 % N-2) and H2S at 700-900 degreesC [1-3]. Alternative methods of synthesis of MoS2 and WS2 nanotubes have since been proposed by employing the decomposition of the ammonium thiometallates or the corresponding trisulfide precursors. This alternative procedure was based on the observation that the trisulfide seems to be formed as an intermediate in the synthesis of the MoS2 and WS2 nanotubes [4]. Accordingly, the decomposition of the trisulfides of MoS2 and W in a reducing atmosphere directly yielded nanotubes of the disulfides MoS2 and WS2 [5]. In this article, we describe the synthesis, structure, and characterization of a few novel nanotubes of the disulfides of groups 4 and 5 metals. These include nanotubes of NbS2, TaS2, ZrS2, and HfS2. The study enlarges the scope of the inorganic nanotubes significantly and promises other interesting possibilities, including the synthesis of the diselenide nanotubes of these metals.

Gibbs energies of formation of rare earth MPt5 compounds

The Gibbs energies of formation of MPt5 (MNd, Dy, Ho, Er) intermetallic compounds were determined in the temperature range 900–1100 K using the solid state cell Ta,M+MF3¦CaF2¦MPt5+Pt+MF3,Ta For M ≡ Sm, a mixture of Gd + GdF3 was used as the reference electrode. In the case of Eu, a mixture of Eu + EuF2 served as the reference electrode. The trifluorides of Sm and Eu are not stable in equilibrium with the metal. The fluoride phase coexisting with a SmPt5 + Pt mixture is SmF3, whereas EuF2 is the equilibrium phase in contact with EuPt5 + Pt. All the MPt5 compounds studied (except EuPt5) exhibit similar stability. Europium is divalent in the pure metal and trivalent in EuPt5. The energy required for the promotion of divalent Eu to the trivalent state accounts for the less negative Gibbs energy of formation of EuPt5. The enthalpies of formation of all the MPt5 compounds obtained in this study are in good agreement with Miedema's model.