Saúde Mental Materna e Retenção de Peso no Pós-parto

O objetivo do presente estudo foi investigar a associação entre a depressão pós-parto e a retenção de peso no pós-parto. Trata-se de um estudo longitudinal, com 563 mulheres no baseline acolhidas em unidades de saúde do município do Rio de Janeiro entre 2005 e 2009, acompanhadas até o 6 mês pós-parto, com dados sobre peso e estatura aos 15 dias pós-parto e peso pré-gestacional. O peso retido após o parto foi calculado a partir da diferença entre o peso aferido nas ondas de seguimento (15 dias, 1, 2, 4 e 6 mês) e o peso pré-gestacional. O estado nutricional pré-gestacional foi classificado de acordo com a OMS. A presença de depressão pós-parto foi avaliada a partir da versão em português da Escala de Depressão Pós-parto de Edimburgo (EPDS) aos 15 dias e no 2 mês após o parto, utilizando-se 11/12 da EPDS como ponto de corte. Considerou-se depressão recorrente quando houve presença de depressão nos dois momentos. Inicialmente analisaram-se características da população. Para as análises estatísticas do efeito do estado nutricional pré-gestacional e do efeito da depressão pós-parto sobre a retenção de peso pós-parto empregou-se o proc mixed do pacote estatístico SAS. Dentre os principais achados, destaca-se que 22,7% (IC 95% 19,3-26,4) das mulheres iniciaram a gravidez com sobrepeso e 10,9% (IC 95% 7,0-15,7) apresentaram depressão recorrente. A retenção média de peso foi de 5,6 kg (IC 95% 5,1-6,1) aos 15 dias pós-parto. Na análise das trajetórias no tempo do peso pós-parto por estado nutricional pré-gestacional ajustadas por idade, escolaridade, número de filhos, aleitamento materno e ganho de peso gestacional, observou-se diminuição da retenção de peso pós-parto para os grupos de baixo peso e sobrepeso pré-gestacional e aumento da retenção de peso pós-parto para o grupo de obesidade pré-gestacional. Na análise das trajetórias no tempo do peso pós-parto por depressão pós-parto verifica-se que o efeito entre o tempo e a retenção de peso pós-parto se modifica para mulheres com depressão pós-parto recorrente nas análises bruta e ajustadas por idade, escolaridade, estado nutricional pré-gestacional, número de filhos, ganho de peso gestacional, aleitamento materno e rede social, nas quais observa-se que as mulheres com depressão pós-parto recorrente perdem menos peso. Os resultados permitem identificar que há no pós-parto perda e ganho de peso, apesar de ser esperada perda de peso almejando o retorno ao peso pré-gestacional. Ressalta-se o impacto da depressão pós-parto observado nesta dinâmica de peso, uma vez que mulheres com depressão pós-parto recorrente apresentaram menor perda de peso. Destaca-se a relevância dos resultados deste estudo para o desenvolvimento da promoção da saúde e da segurança alimentar e nutricional, visando um monitoramento do estado nutricional pós-parto e avaliação da saúde mental materna de forma a contribuir para a prevenção da obesidade feminina e comorbidades

Custo-efetividade da prova tuberculínica versus QuantiFERON-TB Gold-In-Tube no diagnóstico e tratamento da infecção latente tuberculosa em profissionais de saúde da Atenção Básica no Brasil.

Os profissionais da área da saúde formam um dos grupos mais vulneráveis à infecção pelo Mycobacterium tuberculosis (Mtb). Segundo estimativas da Organização Mundial de Saúde (OMS), 8,8 milhões de pessoas estavam infectadas pelo Mtb e ocorreram 1,4 milhão de óbitos por tuberculose (TB) em 2010. A identificação de pessoas com Infecção Latente Tuberculosa (ILTB) é considerada pela OMS como uma prioridade no controle da doença, especialmente em países em desenvolvimento em que a incidência da doença ativa tem apresentado redução. O objetivo do presente trabalho foi avaliar, no Brasil, o custo-efetividade dos testes Prova Tuberculínica (PT) e Quantiferon TB Gold-In-Tube (QTF-GIT) no diagnóstico e tratamento da ILTB em profissionais de saúde atuantes na atenção básica, sob a perspectiva do Sistema Único de Saúde (SUS), comparando cinco estratégias que incluem o QTF-GIT, distintos pontos de corte para a PT e uso sequencial dos dois testes; e analisar o impacto do tabagismo sobre o risco de ILTB entre os profissionais de saúde, destacando-se a categoria da Enfermagem. Foi realizada uma avaliação econômica completa do tipo custo-efetividade, conduzida considerando uma coorte hipotética de 10.000 profissionais de saúde atuantes na atenção básica, com horizonte temporal restrito a um ano. Um modelo analítico de decisão, caracterizado por uma árvore de probabilidades de eventos, foi desenvolvido utilizando o software TreeAge ProTM 2013 para simular os resultados clínicos e impactos econômicos em saúde da nova tecnologia diagnóstica (QTF-GIT) versus a PT tradicional. Esse modelo simulou cinco estratégias diagnósticas para detecção e tratamento da ILTB: (a) PT, usando ponto de corte de 5mm; (b) PT, usando ponto de corte de 10 mm; (c) teste QTF-GIT; (d) PT, com ponto de corte de 5mm, seguida de teste QTF-GIT quando PT positiva; (e) PT, com ponto de corte de 10mm, seguida de teste QTF-GIT quando PT positiva. Foi realizada análise de sensibilidade determinística univariada. Na determinação dos fatores associados à ILTB, foi elaborado um modelo de regressão logística múltipla com seleção hierarquizada, utilizando o software Stata. A estratégia mais custo-efetiva foi a PT no ponto de corte ≥10mm, considerando como medida de desfecho tanto o número de indivíduos corretamente classificados pelos testes assim como o número de casos de TB evitados. A utilização isolada do QTF-GIT revelou-se a estratégia de menor eficiência, com RCEI= R$ 343,24 por profissional corretamente classificado pelo teste. Encontrou-se risco à ILTB significantemente maior para sexo masculino [OR=1,89; IC 95%:1,11-3,20], idade ≥ 41 anos [OR=1,56; IC 95%: 1.09-2,22], contato próximo com familiar com TB [OR=1,55; IC 95%: 1.02-2,36], status do tabagismo fumante [OR=1,75; IC 95%: 1.03-2,98] e categoria profissional da Enfermagem [OR=1,44; IC 95%: 1.02-2,03]. Concluiu-se que a PT no ponto de corte de 10mm é a estratégia diagnóstica mais custo-efetiva para ILTB entre os profissionais de saúde na atenção básica e que a ILTB está associada ao hábito do tabagismo e à categoria profissional de Enfermagem.

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.

On computing the physical sources of jet noise

We derive a closed system of equations that relates the acoustically radiating flow variables to the sources of sound for homentropic flows. We use radiating density, momentum density and modified pressure as the dependent variables which leads to simple source terms for the momentum equations. The source terms involve the non-radiating parts of the density and momentum density fields. These non-radiating components are obtained by removing the radiating wavenumbers in the Fourier domain. We demonstrate the usefulness of this new technique on an axi-symmetric jet solution of the Navier-Stokes equations, obtained by direct numerical simulation (DNS). The dominant source term is proportional to the square of the non-radiating part of the axial momentum density. We compare the sound sources to that obtained by an acoustic analogy and find that they have more realistic physical properties. Their frequency content and amplitudes are consistent with. We validate the sources by computing the radiating sound field and comparing it to the DNS solution. © 2010 by S. Sinayoko, A. Agarwal.

Metamaterial filter for the near-visible spectrum

We demonstrate metamaterials operating in the near-visible regime based on two-dimensional arrays of gold-coated silicon nanopillars. The nanopillar arrays demonstrate a cutoff response at the metamaterial plasma frequency in accordance with theory and can be utilized for filtering applications. A plasma frequency in the near visible region of λ = 1 μm is calculated numerically for an array with a lattice constant of 300 nm and wire radius of 50 nm, with reflection measurements in agreement with numerical calculations. Such structures can be utilized for achieving negative-index based metamaterials for the visible spectrum. © 2012 American Institute of Physics.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. © 2012 Tan et al.

Metamaterial filter for the near-visible spectrum

We demonstrate metamaterials operating in the near-visible regime based on two-dimensional arrays of gold-coated silicon nanopillars. The nanopillar arrays demonstrate a cutoff response at the metamaterial plasma frequency in accordance with theory and can be utilized for filtering applications. A plasma frequency in the near visible region of λ = 1 μm is calculated numerically for an array with a lattice constant of 300 nm and wire radius of 50 nm, with reflection measurements in agreement with numerical calculations. Such structures can be utilized for achieving negative-index based metamaterials for the visible spectrum.

Detailed design of242mAm breeding in pressurized water reactors

There is growing interest in the use of 242mAm as a nuclear fuel. Because of its very high thermal fission cross section and its large number of neutrons released per fission, it can be used for various unique applications, such as space propulsion, medical applications, and compact energy sources. Since the thermal absorption cross section of 242mAm is very high, the best way to obtain 242mAm is by the capture of fast or epithermal neutrons in 241Am. However, fast spectrum reactors are not readily available. In this paper, we explore the possibility of producing 242mAm in existing pressurized water reactors (PWRs) with minimal interference in reactor performance. As suggested in previous studies on the subject, the 242mAm breeding targets are shielded with strong thermal absorbers in order to suppress the thermal neutron flux that causes 242mAm destruction. Since 242mAm enrichment within the Am target mainly depends on the neutron energy distribution, which in turn depends on the Am target thickness and on the neutron filter cutoff energy (thermal absorber type), this unique Am target design was developed. In our study, Cd, Sm, and Gd were considered as thermal neutron filters, as suggested by Cesana et al. The most favorable results were obtained by irradiating Am targets covered either with Gd or Cd. In these cases, up to 8.65% enrichment of 242mAm is obtained after 4.5 yr (three successive PWR fuel cycles) of irradiation. It was also found that significant quantities [up to 1.3 kg/GW (electric)-yr] of 242mAm can be obtained in PWR reactors without notable interference with reactor performance. However, in order to maintain the original fuel cycle length, the enrichment of the driver (UO2) fuel must be increased by ∼1%, raised from the conventional 4.5 to 5.5%, depending on the thermal neutron filter used. The most important reactivity feedback coefficients for fuel assemblies containing the 242mAm breeding targets were evaluated and found to be close to those of a standard PWR. Another product of neutron capture in the 241Am reaction is 238Pu. It was found that in a typical 1000 MW (electric) PWR core with one-third of the fuel assemblies containing 241Am targets, up to 15.1 kg of 238Pu enriched to 80% can be produced per year.

Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.

Proposal of an Ultracompact Triplexer Using Photonic Crystal Waveguide with an Air Holes Array

We propose an ultracompact triplexer based on a shift of the cutoff frequency of the fundamental mode in a planar photonic crystal waveguide (PCW) with a triangular lattice of air holes. The shift is realized by modifying the radii of the border holes adjacent to the PCW core. Some defect holes are introduced to control the beam propagation. The numerical results obtained by the finite-difference time-domain method show that the presented triplexer can separate three specific wavelengths, i.e. 1310, 1490 and 1550 nm with the extinction ratios higher than - 18 dB. The designed device with a size as compact as 12 mu m x 6.5 mu m is feasible for the practical application, and can be utilized in the system of fiber to the home.

Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy

The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]

Mode coupling and vertical radiation loss for whispering-gallery modes in 3-D microcavities

The characteristics of whispering-gallery modes (WGMs) in 3-D cylindrical, square, and triangular microcavities with vertical optical confinement of semiconductors are numerically investigated by the finite-difference time-domain (FDTD) technique. For a microcylinder with a vertical refractive index 3.17/3.4/3.17 and a center layer thickness 0.2 mu m, Q-factors of transverse electric (TE) WGMs around wavelength 1550 nm are smaller than 10(3), as the radius R < 4 mu m and reach the orders of 10(4) and 10(6) as R = 5 and 6 mu m, respectively. However, the Q-factor of transverse magnetic (TM) WGMs at wavelength 1.659 mu m reaches 7.5 x 10(5) as R = 1 mu m. The mode coupling between the WGMs and vertical radiation modes in the cladding layer results in vertical radiation loss for the WGMs. In the microcylinder, the mode wavelength of TM WGM is larger than the cutoff wavelength of the vertical radiation mode with the same mode numbers, so TM WGMs cannot couple with the vertical radiation mode and have high Q-factor. In contrast, TE WGMs can couple with the corresponding vertical radiation mode in the 3-D microcylinder as R < 5 mu m. However, the mode wavelength of the TE WGM approaches (is larger than) the cutoff wavelength of the corresponding radiation modes at R = 5 mu m (6 mu m), so TE WGMs have high Q-factors in such microcylinders too. The results show that a critical lateral size is required for obtaining high, Q-factor TE WGMs in the 3-D microcylinder. For 3-D square and triangular microcavities, we also find that the Q-factor of TM WGM is larger than that of TE WGM.

Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128x128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280-320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES

Two type II superlattices (SLs) InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the periods of the two SLs were 31.2 angstrom and 57.3 angstrom, respectively. Room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1 mu m and 5 mu m for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The spectral response and blackbody tests were carried out at low and room temperatues. The results show that the 50% cutoff wavelengths of the two photoconductors are 2.1 mu m and 5.0 mu m respectively and D-bb* is above 2 x 10(8) cmHz(1/2)/W for two kinds of photoconductors at 77K. D-bb* is above 10(8) cmHz(1/2)/W for SWIR photoconductor at room temperature.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.