Superionic Noble Metal Chalcogenide Thermoelectrics

Measurements and modeling of Cu₂Se, Ag₂Se, and Cu₂S show that superionic conductors have great potential as thermoelectric materials. Cu₂Se and Ag₂Se are predicted to reach a zT of 1.2 at room temperature if their carrier concentrations can be reduced, and Cu-vacancy doped Cu₂S reaches a maximum zT of 1.7 at 1000 K. Te-doped Ag₂Se achieves a zT of 1.2 at 520 K, and could reach a zT of 1.7 if its carrier concentration could be reduced. However, superionic conductors tend to have high carrier concentrations due to the presence of metal defects. The carrier concentration has been found to be difficult to reduce by altering the defect concentration, therefore materials that are underdoped relative to the optimum carrier concentration are easier to optimize. The results of Te-doping of Ag₂Se show that reducing the carrier concentration is possible by reducing the maximum Fermi level in the material.

Two new methods for analyzing thermoelectric transport data were developed. The first involves scaling the temperature-dependent transport data according to the temperature dependences expected of a single parabolic band model and using all of the scaled data to perform a single parabolic band analysis, instead of being restricted to using one data point per sample at a fixed temperature. This allows for a more efficient use of the transport data. The second involves scaling only the Seebeck coefficient and electrical conductivity. This allows for an estimate of the quality factor (and therefore the maximum zT in the material) without using Hall effect data, which are not always available due to time and budget constraints and are difficult to obtain in high-resistivity materials. Methods for solving the coherent potential approximation effective medium equations were developed in conjunction with measurements of the resistivity tensor elements of composite materials. This allows the electrical conductivity and mobility of each phase in the composite to be determined from measurements of the bulk. This points out a new method for measuring the pure-phase electrical properties in impure materials, for measuring the electrical properties of unknown phases in composites, and for quantifying the effects of quantum interactions in composites.

Ultrafast non-linear optical properties of Ge20As25Se55 chalcogenide films

The non-resonant third-order non-linear optical properties of amorphous Ge20As25Se55 films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 x 10(-12) and -2.4 x 10(-12) esu, respectively. Amorphous Ge20As25Se55 films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge20As25Se55 films makes it a promising material for application in advanced techniques especially in optical switching. (c) 2005 Elsevier B.V. All rights reserved.

Laser pulse induced bumps in chalcogenide phase change films

Formation of bumps in chalcogenide phase change thin films during the laser writing process is theoretically and experimentally investigated. The process involves basically fast heating and quenching stages. Circular bumps are formed after cooling, and the shape and size of the bumps depend on various parameters such as temperatures, laser power, beam size, laser pulse duration, etc. In extreme cases, holes are formed at the apex of the bumps. To understand the bumps and their formation is of great interest for data storage. In the present work, a theoretical model is established for the formation process, and the geometric characters of the formed bumps can be analytically and quantitatively evaluated from various parameters involved in the formation. Simulations based on the analytic solution are carried out taking Ag8In14Sb55Te23 as an example. The results are verified with experimental observations of the bumps. (C) 2008 American Institute of Physics.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Photoinduced stable second-harmonic generation in chalcogenide glasses

We report on photoinduced second-harmonic generation (SHG) in chalcogenide glasses. Fundamental and second-harmonic waves from a nanosecond pulsed Nd:YAG laser were used to induce second-order nonlinearity in chalcogenide glasses. The magnitude of SHG in 20Ge . 20As . 60S glass was 10(4) larger than that of tellurite glass with a composition of 15Nb(2)O(5) . 85TeO(2) (mol.%). Moreover, no apparent decay of photoinduced SHG in 20Ge . 20As . 60S glass was observed after optical poling at room temperature. We suggest that the large and stable value of X-(2) is due to the induced defect structures and large X-(3) of the chalcogenide glasses. (C) 2001 Optical Society of America

Las políticas tecnológicas y de innovación en la Comunidad Autónoma de Euskadi: El caso de los Clusters

[ES] En el presente trabajo se ha tratado de analizar la evolución de las políticas tecnológicas y de innovación en la Comunidad Autónoma de Euskadi (CAE), en las últimas tres décadas, prestando especial atención a la política de clusters. Es evidente el avance tecnológico e innovador experimentado por Euskadi en este período, basado en la estrecha cooperación desarrollada entre las universidades, las instituciones públicas y las empresas privadas. En este marco, la CAE fue pionera en el diseño y puesta en marcha de una política de clusters a principios de los años noventa. Tras más de dos décadas de funcionamiento de dicha política, ésta parece haberse consolidado existiendo en la actualidad 13 asociaciones cluster en Euskadi.

Política de escalonamento de recursos computacionais em clusters de física de altas energias

Este trabalho apresenta uma proposta para permitir o uso compartilhado dos recursos computacionais utilizados em um cluster de forma a atender simultaneamente aos quatro experimentos do CERN. A abordagem adotada utiliza o conceito de contratos, onde os requisitos e restrições de cada experimento são descritos em perfis, e uma política de alocação de recursos é definida para manter a utilização dos recursos de forma a atender aos perfis. Propomos um modelo de arquitetura para gerenciar o uso compartilhado de um cluster pelas quatro Organizações Virtuais do LHC. Este modelo de arquitetura é composto de elementos comuns a um cluster típico da Tier-2, acrescidos de funcionalidades para controlar a admissão de novos jobs de todas as Organizações Virtuais do LHC. Este modelo monitora a utilização de recursos do cluster por cada OV, aloca recursos para cada job de acordo com uma política estabelecida para o cluster de forma a procurar respeitar os requisitos de cada uma delas. Definimos um algoritmo para o escalonamento de jobs, que utiliza mecanismos de preempção para controlar a alocação de nós do cluster dependendo o uso corrente e acumulado de recursos por cada OV. Este algoritmo é executado em um dos elementos da arquitetura batizado de broker, dado que o mesmo intermedeia a chegada de novos jobs e a alocação dos nós do cluster, e tem com objetivo manter o controle dos contratos de cada OV. A simulação da arquitetura proposta foi feita no simulador de grades GridSim e os resultados obtidos foram avaliados.

Mother structures related to the hexagonal and cubic close packing in Cu24 clusters: solvent-influenced derivatives

Artículo científico CrystEngComm

Otimização de recursos e economia de energia em clusters usando virtualização.

Este trabalho propõe uma arquitetura reutilizável que permite a gerência de uma infraestrutura de suporte para aplicações Web, utilizando máquinas virtuais. O objetivo da arquitetura é garantir qualidade de serviço, atuando nos servidores físicos (hospedeiros) ou manipulando as máquinas virtuais, e avaliando o cumprimento das restrições de operação (tempo de resposta máximo). Além disso, através do uso racional dos recursos utilizados, a proposta visa à economia de energia. O trabalho também inclui uma avaliação de desempenho realizada sobre um sistema implementado com base na arquitetura. Esta avaliação mostra que a proposta é funcional e o quanto ela pode ser vantajosa do ponto de vista do uso de recursos, evitando desperdício, mantendo-se ainda a qualidade de serviço em níveis aceitáveis pela aplicação.