Surface oxidation of cadmium, indium, tin and antimony by photoelectron and Auger spectroscopy

Surface oxidation of Cd, In, Sn and Sb has been investigated by employing valence bands, metal 4d levels and plasmon bands in X-ray photoelectron spectra. O(KLL), metal M4N45N45, and plasmon transitions in electron-induced Auger spectra as well as Auger transitions due to the metal (metal oxide) and plasmons in X-ray-induced Auger spectra. The surface oxides are In2O4, CdO and a mixture of SnO and SnO2 in the case of In. Cd and Sn respectively. The facility of surface oxidation is found to vary as In>Cd>Sn>Sb. Inter-atomic Auger transitions involving oxygen valence bands have been identified on oxidized surfaces of Cd and In.

Nuclear Magnetic-Resonance Spectra Of Oriented Biologically Important Molecules - The Structure Of And The Internal-Rotation In N,N-Dimethyluracil

From the proton NMR spectra of Nfl-dimethyluracil oriented in two different nematic solvents, the internal rotation of the methyl groups about the N-C bonds is studied. It has been observed that the preferred conformation of the methyl group having one carbonyl in the vicinity is the one where a C-H bond is in the ring plane pointing toward the carbonyl group. The results are not sensitive to the mode of rotation of the other methyl group. These data are interpreted in terms of the bond polarizations.

Infrared spectra of 1.3-dithiole-2-thione and its selenium analogues ând frequency assignment and molecular force constants

Infrared spectra of 1,3-dithiole-2-thione (DTT) and its four selenium analogues have been studied in the region 4000 to 20 cm�1. Assignment of all the fundamental frequencies was made by noting the band shifts on progressive selenation. Normal coordinate analysis procedures have been applied for both in-plane and out-of-plane vibrations to help the assignments. The Urey�Bradley force function supplemented with valence force constants for the out-of-plane vibrations was employed for coordinate calculations. A correlation of the infrared assignments of DTT with its different selenium analogues is accomplished. Further, the infrared assignments are compared with those of trithiocarbonate ion and its selenium analogues and other structurally related heterocyclic molecules.

X-ray photoelectron spectra and Auger studies of the surface oxidation of cobalt

Surface oxidation of Co has been investigated at different temperatures in the 300–600 K range at oxygen exposures upto 106 L by XPES and AES techniques. In the XPES, both the valence band and core level bands have been employed to monitor the oxidation while in the AES, metal Auger intensity ratios as well as O(KLL)/Co(L23M45M45) ratios have been examined. Only CoO is formed on the surface at high oxygen exposures at and above 500 K.

Laser Raman spectra of semicarbazide hydrobromide

Semicarbazide hydrobromide which is isomorphous with SEM.HCl, was expected to belong to a new family of ferroelectrics. Dielectric, thermal and other studies on these crystals have yielded results which show many peculiarities but not confirmed ferroelectricity in the low temperature phase. As such a Laser Raman spectrosocopic study of oriented singe crystals of SEM.HBr was made at 298°K and at 253°K. The results have been correlated with structural features and compared with SEM.HCl.

Infrared spectra of some oxides of K2NiF4 and related structures

The i.r. spectra of some Ln2BO4 and LnSrBO4 compounds (Ln = La, Pr, Nd, Sm or Gd;B = Fe, Al, Co or Cu) with K2NiF4 or related structures have been studied in the range 800-300 cm−1. The BO6 octahedra in compounds with K2NiF4 structure are elongated. The assignment of the bands in terms of internal modes of sheets of bridged BO6 octahedra or square-planar BO4 sheets has been considered. The observed spectra are correlated with those of solid solutions of these oxides and of LnBO3 perovskites. Unusually high stretching frequencies found in some of the oxides are discussed in terms of the short B---O bonds in the basal plane and the Ln---O bonds along the c axis.

Infrared spectra of some oxides of K2NiF4 and related structures

The i.r. spectra of some Ln2BO4 and LnSrBO4 compounds (Ln = La, Pr, Nd, Sm or Gd;B = Fe, Al, Co or Cu) with K2NiF4 or related structures have been studied in the range 800-300 cm−1. The BO6 octahedra in compounds with K2NiF4 structure are elongated. The assignment of the bands in terms of internal modes of sheets of bridged BO6 octahedra or square-planar BO4 sheets has been considered. The observed spectra are correlated with those of solid solutions of these oxides and of LnBO3 perovskites. Unusually high stretching frequencies found in some of the oxides are discussed in terms of the short B---O bonds in the basal plane and the Ln---O bonds along the c axis.

Deviant near-infrared spectra identifies Corymbia hybrids

The study examined the potential of Near Infrared Reflectance (NIR) spectroscopy for field diagnosis of hybrids between Corymbia (formerly Eucalyptus) species. NIR profiles were generated by scanning foliage from a total of 383 hybrid and 533 parental seedlings grown in a common garden and partial least squares discriminant analysis was used to test three-way model power to assign individuals to their appropriate taxon; either a parental or F1 hybrid class. Using the optimised conditions, fresh foliage from eight-month-old seedlings and a handheld NIR instrument (950–1800 nm), the mean assignment rates for the three hybrid groups ranged from 76% to 90%. Hybrid-parent contrast of NIR spectra deviated more so than parent–parent contrast. The F1 taxon assignment rates were usually higher than those for parents at 100% and 72%, respectively. Hybrid resolution was even greater for 2nd generation backcross hybrids. Similar to studies of morphology, taxon assignments tended to be more accurate for hybrid groups in which the parental taxa were more divergent. The practical application of this technique for hybrid diagnosis of seedlings in the nursery will require careful attention to control environmental factors because seedling age and storage effects influenced the ability of NIR to identify hybrids. The technique may also necessitate the generation of comparable reference populations, although exclusions approaches to analysis may circumvent the need for reference populations. The application of NIR in field diagnosis will be further complicated by the need to generate global models across environments but such models have been obtained for reliable prediction of chemistries in other situations.

Vibrational spectra and ferroelectric transition in sodium ammonium selenate dihydrate

The Raman and infrared absorption spectra of sodium ammonium selenate dihydrate (SASD) have been recorded both above and below the ferroelectric transition temperature. The deuterated SASD has also been investigated. The results support the view that while there is only one type of NH4+ ions in the para electric phase, there are two types of NH4+ ions below Tc. The water molecules undergo considerable change and non-equivalent O-H bonds are produced below Tc. The SeO2/4- ions undergo very little change.

Two-dimensional NMR spectra of oriented molecules

Abstract is not available.

Vibration spectra of ferroelectric alkali trihydrogen selenites and the nature of the hydrogen bond potential in these crystals

Raman spectra of the ferroelectric LiH3 (SeO3)2 and NaH3(SeO3)2 and the anti-ferroelectric KH3 (SeO3)2 have been recorded at room temperature using a He-Ne and also an Ar-ion laser source. The infrared absorption spectra of these crystals and their deuterated analogues have been recorded in the region 400–4000 cm−1 both below and above the Curie temperature. From an analysis of the spectrum in the region 400–900 cm−1 it is concluded that (i) in LiH3 (SeO3)2 the protons are ordered in an asymmetric double minimum potential with a low barrier and the spectrum can be interpreted in terms of HSeO3− and H2SeO3 vibrations, (ii) in NaH3 (SeO3)2 all three protons occupy a single minimum potential at room temperature and below the transition temperature the groups HSeO3− and H2SeO3 are present, (iii) the proton at the inversion centre in KH3(SeO3)2 is in a broad troughed potential well and the low temperature spectrum is more likely to be due to H3SeO3+ and SeO32− species. This deviation of the spectrum from that of the previous two crystals is attributed to the difference in H-bond scheme and hence the absence of any cooperative motion of protons in this crystal.

Radical Enhanced Atomic Layer Deposition of Metals and Oxides

Atomic Layer Deposition (ALD) is a chemical, gas-phase thin film deposition method. It is known for its ability for accurate and precise thickness control, and uniform and conformal film growth. One area where ALD has not yet excelled is film deposition at low temperatures. Also deposition of metals, besides the noble metals, has proven to be quite challenging. To alleviate these limitations, more aggressive reactants are required. One such group of reactants are radicals, which may be formed by dissociating gases. Dissociation is most conveniently done with a plasma source. For example, dissociating molecular oxygen or hydrogen, oxygen or hydrogen radicals are generated. The use of radicals in ALD may surmount some of the above limitations: oxide film deposition at low temperatures may become feasible if oxygen radicals are used as they are highly reactive. Also, as hydrogen radicals are very effective reducing agents, they may be used to deposit metals. In this work, a plasma source was incorporated in an existing ALD reactor for radical generation, and the reactor was used to study five different Radical Enhanced ALD processes. The modifications to the existing reactor and the different possibilities during the modification process are discussed. The studied materials include two metals, copper and silver, and three oxides, aluminium oxide, titanium dioxide and tantalum oxide. The materials were characterized and their properties were compared to other variations of the same process, utilizing the same metal precursor, to understand what kind of effect the non-metal precursor has on the film properties and growth characteristics. Both metals were deposited successfully, and silver for the first time by ALD. The films had low resistivity and grew conformally in the ALD mode, demonstrating that the REALD of metals is true ALD. The oxide films had exceptionally high growth rates, and aluminium oxide grew at room temperature with low cycle times and resulted in good quality films. Both aluminium oxide and titanium dioxide were deposited on natural fibres without damaging the fibre. Tantalum oxide was also deposited successfully, with good electrical properties, but at slightly higher temperature than the other two oxides, due to the evaporation temperature required by the metal precursor. Overall, the ability of REALD to deposit metallic and oxide films with high quality at low temperatures was demonstrated.

Atomic Layer Deposition of Electroluminescent ZnS, SrS, and BaS Thin Films

The light emitted by flat panel displays (FPD) can be generated in many different ways, such as for example alternating current thin film electroluminescence (ACTFEL), liquid crystal display (LCD), light emitting diode (LED), or plasma display panel (PDP) technologies. In this work, the focus was on ACTFEL devices and the goal was to develop new thin film processes for light emitting materials in ACTFEL devices. The films were deposited with the atomic layer deposition (ALD) method, which has been utilized in the manufacturing of ACTFEL displays since the mid-1980s. The ALD method is based on surface-controlled self-terminated reactions and a maximum of one layer of the desired material can be prepared during one deposition cycle. Therefore, the film thickness can be controlled simply by adjusting the number of deposition cycles. In addition, both large areas and deep trench structures can be covered uniformly. During this work, new ALD processes were developed for the following thin film materials: BaS, CuxS, MnS, PbS, SrS, SrSe, SrTe, SrS1-xSex, ZnS, and ZnS1-xSex. In addition, several ACTFEL devices were prepared where the light emitting material was BaS, SrS, SrS1-xSex, ZnS, or ZnS1-xSex thin film that was doped with Ce, Cu, Eu, Mn, or Pb. The sulfoselenide films were made by substituting the elemental selenium for sulfur on the substrate surface during film deposition. In this way, it was possible to replace a maximum of 90% of the sulfur with selenium, and the XRD analyses indicated that the films were solid solutions. The polycrystalline BaS, SrS, and ZnS thin films were deposited at 180-400, 120-460, and 280-500 °C, respectively, and the processes had a wide temperature range where the growth rate of the films was independent of the deposition temperature. The electroluminescence studies showed that the doped sulfoselenide films resulted in low emission intensity. However, the emission intensities and emission colors of the doped SrS, BaS, and ZnS films were comparable with those found in earlier studies. It was also shown that the electro-optical properties of the different ZnS:Mn devices were different as a consequence of different ZnS:Mn processes. Finally, it was concluded that because the higher deposition temperature seemed to result in a higher emission intensity, the thermal stability of the reactants has a significant role when the light emitting materials of ACTFEL devices are deposited with the ALD method.