Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Nuclear matter at a HIRFL-CSR energy regime

We report some recent progress in constraining the symmetry energy E-sym(rho) at high densities using high-energy heavy-ion collisions. Circumstantial evidence of a soft E-sym(rho) at supra-saturation density is obtained by comparing the pion ratio pi(-)/pi(+) measured recently with FOPI at GSI and the IBUU04 model calculations. Detailed studies indicate that the power of determining the E-sym(rho)from pi(-)/pi(+) is enhanced with decreasing the beam energy to near the pion production threshold, showing a correlation to the increasing nuclear stopping. Among several heavy-ion reaction facilities in the world, the cooling storage ring (HIRFL-CSR), newly commissioned at Lanzhou, delivering heavy-ion beams up to 1 A GeV, to be coupled with advanced detectors will contribute significantly to further studies of the equation of state of asymmetric nuclear matter.