以Au为缓冲层在Si衬底上生长ZnO薄膜

采用化学气相沉积（CVD）方法在Si（001）衬底上分别制备了有金属Au缓冲层以及无Au缓冲层的ZnO薄膜。其中Au缓冲层在物理气相沉积（PVD）设备中蒸发，厚度大约为300nm。有Au缓冲层的ZnO薄膜晶体质量比直接在Si衬底上生长有了显著提高。利用X射线衍射（XRD）研究了所生长ZnO薄膜的结晶质量，有Au缓冲层的ZnO薄膜虽然仍为多晶，但显示出明显的择优取向。用光学显微镜研究了ZnO薄膜的表面特征，金属Au缓冲层显著地提高了在Si衬底上生长的ZnO薄膜的晶粒尺寸及平整度。同时利用室温光致发光（PL）谱研究了ZnO薄膜的光学性质，并分析了有Au缓冲层的ZnO薄膜NEB发光峰强度反而弱的可能原因。

Au-GaN肖特基结的伏安特性

在MBE和MOCVD两种方法制备的n-GaN材料上制作了Au-GaN肖特基结，测定了肖特基结的室温I-V特性。分析表明

Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究

于2010-11-23批量导入

Au、Al/a-Si:H热退火行为研究

于2010-11-23批量导入

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 C and then studied using UV–vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles...