Vibronic model for band A emission in diamond

In this paper, recent results on band A emission in chemical vapor-deposited diamond films have been analyzed within a vibronic model. The blue-band A (2.8 eV) spectra from undoped diamond films grown by two different techniques have been simulated using the same phonon density distribution g(Omega) and Huang-Rhys factor (S). The same g(Omega) at higher S gives a good fit with the green band A (2.32 eV) as well. This model provides a reasonable alternative approach to the long standing donor-acceptor pair recombination model.

Zn incorporation and band gap shrinkage in p-type GaAs

Dimethylzine (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium and arsine (AsH3) as source materials, The hole carrier concentrations and zinc (Zn) incorporation efficiency are studied by using the Hall effect, electrochemical capacitance voltage profiler and photoluminescence (PL) spectroscopy, The influence of growth parameters such as DMZn mole fraction, growth temperature, and AsH, mole fraction on the Zn incorporation have been studied. The hole concentration increases with increasing DMZn and AsH3 mole fraction and decreases with increasing growth temperature. This can be explained by vacancy control model. The PL experiments were carried out as a function of hole concentration (10(17)-1.5 x 10(20) cm(-3)). The main peak shifted to lower energy and the full width at half maximum (FWHM) increases with increasing hole concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(p)(eV) = 1.15 x 10(-8)p(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Zn doped GaAs as a function of hole concentration. The value of Delta E-g(eV) = -2.75 x 10(-8)p(1/3), indicates a significant band gap shrinkage at high doping levels, These relations are considered to provide a useful tool to determine the hole concentration in Zn doped GaAs by low temperature PL measurement. The hole concentration increases with increasing AsH3 mole fraction and the main peak is shifted to a lower energy side. This can be explained also by the vacancy control model. As the hole concentration is increased above 3.8 x 10(18) cm(-3), a shoulder peak separated from the main peak was observed in the PL spectra and disappears at higher concentrations. (C) 1997 American Institute of Physics.

Nonlinear electrical conduction and broad band noise in the charge-ordered rare earth manganate Nd0.5Ca0.5MnO3

Measurements of the dc transport properties and the low-frequency conductivity noise in films of charge-ordered Nd0.5Ca0.5MnO3 grown on Si substrate reveal the existence of a threshold field in the charge-ordered regime beyond which strong nonlinear conduction sets in along with a large broad band conductivity noise. Threshold-dependent conduction disappears as T --> T-CO, the charge-ordering temperature. This observation suggests that the charge-ordered state gets depinned at the onset of the nonlinear conduction. (C) 1999 American Institute of Physics. [S0003-6951(99)05247-X].

Measurement of axial dispersion coefficient in a packed bed using X-ray

Dispersion of the liquid in a porous media is of great importance in many areas of engineering and has been studied by several researchers so far. A new experimental method has been developed to measure the dispersion coefficient. X-ray absorption technique provides a better understanding of dispersion that characterizes the mixing phenomenon in the packed beds. This is because the method is non-invasive and also it gives tracer concentration data at every point within the bed. The axial dispersion in a cylindrical bed of non-porous and non-wetting spherical particles has been measured for the flow of water. Aqueous barium chloride solution has been used a as tracer. X-ray images, recorded on a videocassette, have been analyzed using an image processing software to extract the local interstitial velocity and concentration data in the bed. Local dispersion coefficient has been determined with the help of aforementioned data. By using these data, the overall dispersion coefficient in a packed bed can also be estimated.

Toward a Mean Field Formulation of the Babcock-Leighton Type Solar Dynamo. I. α-Coefficient versus Durney's Double-Ring Approach

We develop a model of the solar dynamo in which, on the one hand, we follow the Babcock-Leighton approach to include surface processes, such as the production of poloidal field from the decay of active regions, and, on the other hand, we attempt to develop a mean field theory that can be studied in quantitative detail. One of the main challenges in developing such models is to treat the buoyant rise of the toroidal field and the production of poloidal field from it near the surface. A previous paper by Choudhuri, Schüssler, & Dikpati in 1995 did not incorporate buoyancy. We extend this model by two contrasting methods. In one method, we incorporate the generation of the poloidal field near the solar surface by Durney's procedure of double-ring eruption. In the second method, the poloidal field generation is treated by a positive α-effect concentrated near the solar surface coupled with an algorithm for handling buoyancy. The two methods are found to give qualitatively similar results.

Structural, optical and nanomechanical properties of (1 1 1) oriented nanocrystalline ZnTe thin films

Structural, optical and nanomechanical properties of nanocrystalline Zinc Telluride (ZnTe) films of thickness upto 10 microns deposited at room temperature on borosilicate glass substrates are reported. X-ray diffraction patterns reveal that the films were preferentially oriented along the (1 1 1) direction. The maximum refractive index of the films was 2.74 at a wavelength of 2000 nm. The optical band gap showed strong thickness dependence. The average film hardness and Young's modulus obtained from load-displacement curves and analyzed by Oliver-Pharr method were 4 and 70 GPa respectively. Hardness of (1 1 1) oriented ZnTe thin films exhibited almost 5 times higher value than bulk. The studies show clearly that the hardness increases with decreasing indentation size, for indents between 30 and 300 nm in depth indicating the existence of indentation size effect. The coefficient of friction for these films as obtained from the nanoscratch test was ~0.4.

Structural, optical and nanomechanical properties of (1 1 1) oriented nanocrystalline ZnTe thin films

Structural, optical and nanomechanical properties of nanocrystalline Zinc Telluride (ZnTe) films of thickness upto 10 microns deposited at room temperature on borosilicate glass substrates are reported. X-ray diffraction patterns reveal that the films were preferentially oriented along the (1 1 1) direction. The maximum refractive index of the films was 2.74 at a wavelength of 2000 nm. The optical band gap showed strong thickness dependence. The average film hardness and Young's modulus obtained from load-displacement curves and analyzed by Oliver-Pharr method were 4 and 70 GPa respectively. Hardness of (1 1 1) oriented ZnTe thin films exhibited almost 5 times higher value than bulk. The studies show clearly that the hardness increases with decreasing indentation size, for indents between 30 and 300 nm in depth indicating the existence of indentation size effect. The coefficient of friction for these films as obtained from the nanoscratch test was ~0.4.

Band Structures of Bilayer Graphene Superlattices

We formulate a low energy effective Hamiltonian to study superlattices in bilayer graphene (BLG) using a minimal model which supports quadratic band touching points. We show that a one dimensional (1D) periodic modulation of the chemical potential or the electric field perpendicular to the layers leads to the generation of zero-energy anisotropic massless Dirac fermions and finite energy Dirac points with tunable velocities. The electric field superlattice maps onto a coupled chain model comprised of ``topological'' edge modes. 2D superlattice modulations are shown to lead to gaps on the mini-Brillouin zone boundary but do not, for certain symmetries, gap out the quadratic band touching point. Such potential variations, induced by impurities and rippling in biased BLG, could lead to subgap modes which are argued to be relevant to understanding transport measurements.

Study of band offsets in InN/Ge heterojunctions

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 +/- 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of similar to 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. (C) 2011 Elsevier B.A. All rights reserved.

Polynomial Coefficient Based Multi-Tone Testing of Analog Circuits

Abstract—A method of testing for parametric faults of analog circuits based on a polynomial representaion of fault-free function of the circuit is presented. The response of the circuit under test (CUT) is estimated as a polynomial in the applied input voltage at relevant frequencies apart from DC. Classification of CUT is based on a comparison of the estimated polynomial coefficients with those of the fault free circuit. The method needs very little augmentation of circuit to make it testable as only output parameters are used for classification. This procedure is shown to uncover several parametric faults causing smaller than 5 % deviations the nominal values. Fault diagnosis based upon sensitivity of polynomial coefficients at relevant frequencies is also proposed.