Deposição de A/N por sputtering não reativo

In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6, 2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called III-V nitrides in which together with the gallium nitride and indium nitride have attracted much interest because they have physical and chemical properties relevant to new technological applications, mainly in microelectronic and optoelectronic devices. Three groups were deposited with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature of 25 ° C. The nanofilms AlN were characterized using three techniques, X-ray diffraction, Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these. Through the analysis of X-rays get the thickness of each sample with its corresponding deposition rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing the amorphous character of the samples. The results obtained by the technique, atomic force microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the samples

Photoluminescence of barium titanate and barium zirconate in multilayer disordered thin films at room temperature

The emission of wide band photoluminescence showed a synergic effect on barium zirconate and barium titanate thin films in alternate multilayer system at room temperature by 488 nm exiting wavelength. The thin films obtained by spin-coating were annealed at 350, 450, and 550 degrees C for 2 h. The X-ray patterns revealed the complete separation among the BaTiO3 and BaZrO3 phases in the adjacent films. Visible and intense photoluminescence was governed by BaZrO3 thin films in the multilayer system. Quantum mechanics calculations were used in order to simulate ordered and disordered thin films structures. The disordered models, which were built by using the displacement of formers and modifier networks, showed a different symmetry in each system, which is in accordance with experimental photoluminescence emission, thus allowing to establish a correlation among the structural and optical properties of these multilayered systems.

Estudo da decomposição térmica de oxalato de estrôncio dopado com cério(III) como precursor de materiais luminescentes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence of nanostructured PbTiO3 processed by high-energy mechanical milling

This letter reports on a process to prepare nanostructured PbTiO3 (PT) at room temperature with photoluminescence (PL) emission in the visible range. This process is based on the high-energy mechanical milling of ultrafine PbTiO3 powder. The results suggest that high-energy mechanical milling modifies the particle's structure, resulting in localized states in an interfacial region between the crystalline PT and the amorphous PT. These localized states are believed to be responsible for the PL obtained with short milling times. When long milling times are employed, the amorphous phase that is formed causes PL behavior. An alternative method to process nanostructured wide-band-gap semiconductors with active optical properties such as PL is described in this letter. (C) 2001 American Institute of Physics.

Highly intense violet-blue light emission at room temperature in structurally disordered SrZrO3 powders

Violet-blue photoluminescence was produced at room temperature in a structurally disordered SrZrO3 perovskite structure with a 350.7 nm excitation line. The intensity of this emission was higher than that of any other perovskites previously studied. The authors discuss the role of structural order-disorder that favors the self-trapping of electrons and charge transference, as well as a model to elucidate the mechanism that triggers photoluminescence. In this model the wide band model, the most important events occur before excitation. (c) 2007 American Institute of Physics.

Photo-induced transformations in chalcogenide composite layers

Investigations of photo-induced structural transformations (PST) and related changes of optical parameters in the light-sensitive amorphous chalcogenides were extended to composite layers, which consist of a wide band-gap material and an active material, Se60Te40 with a smaller band gap. Photo-stimulated interdiffusion and/or crystallization in layered Se0.6Tc0.4/As0.6Se0.94 and Se0.6Te0.4/SiOx were investigated with respect to their dependence on the compositional modulation of the multilayer at scale-dimensions (similar to3-10nm). It was established that PST due to the interdiffusion and crystallization can be efficiently operated by the composition of the adjacent layers of the multilayer which results in the change of the transformation rate and of the optical relief type (positive or negative). The comparison with a single Se0.6Te0.4 layer and with the known data for amorphous-Se/As2S3 multilayers supports the advantages of composite layers for amplitude-phase optical recording. (C) 2004 Published by Elsevier B.V.

Ferroelectric materials with photoluminescent properties

Amorphous LiNbO3 thin films processed by polymeric precursor method exhibited efficient luminescence at room temperature. The films were deposited on silicon substrates and treated at 200degreesC for different times. The photoluminescence emission yield decreases with the increase of the treatment time and disappears for crystalline films. A theoretical-experimental study was performed on amorphous and crystalline materials to understand the influence of the defects on the photoluminescence properties. The theoretical band gap obtained by the difference of energy between the HOMO and LUMO levels is larger for crystalline structure when compared with amorphous material. This result, which is in agreement with experimental band gaps obtained from optical measurements, revealed the emergence of new electronic levels for the amorphous material, which are localized in the wide band gap of the crystalline structure. These new electronic levels may explain the photoluminescence observed at room temperature for LiNbO3 amorphous films.

Structural refinement, growth process, photoluminescence and photocatalytic properties of (Ba1-xPr2x/3)WO4 crystals synthesized by the coprecipitation method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A low-voltage programmable-gain current-mode amplifier

A CMOS low-voltage, wide-band continuous-time current amplifier is presented. Based on an open-loop topology, the circuit is composed by transresistance and transconductance stages built around triode-operating transistors. In addition to an extended dynamic range, the amplifier gain can be programmed within good accuracy by the rapport between the aspect-ratio of such transistors and tuning biases Vxand Vy. A balanced current-amplifier according to a single I. IV-supply and a 0.35μm fabrication process is designed. Simulated results from PSPiCE and Bsm3v3 models indicate a programmable gain within the range 20-34dB and a minimum break-frequency of IMHz @CL=IpF. For a 200 μApp-level, THD is 0.8% and 0.9% at IKHz and 100KHz, respectively. Input noise is 405pA√Hz @20dB-gain, which gives a SNR of 66dB @1MHz-bandwidth. Maximum quiescent power consumption is 56μ W. © 2002 IEEE.

Structural Health Monitoring based on AR models and PZT sensors

This paper presents a new approach for damage detection in Structural Health Monitoring (SHM) systems, which is based on the Electromechanical Impedance (EMI) principle and Autoregressive (AR) models. Typical applications of EMI in SHM are based on computing the Frequency Response Function (FRF). In this work the procedure is based on the EMI principle but the results are determined through the coefficients of AR models, which are computed from the time response of PZT transducers bonded to the monitored structure, and acting as actuator and sensors at the same time. The procedure is based on exciting the PZT transducers using a wide band chirp signal and getting its time response. The AR models are obtained in both healthy and damaged conditions and used to compute statistics indexes. Practical tests were carried out in an aluminum plate and the results have demonstrated the effectiveness of the proposed method. © 2012 IEEE.

Damage Detection Based on Electromechanical Impedance Principle and Principal Components

This paper presents a novel time domain approach for Structural Health Monitoring (SHM) systems based on Electromechanical Impedance (EMI) principle and Principal Component Coefficients (PCC), also known as loadings. Differently of typical applications of EMI applied to SHM, which are based on computing the Frequency Response Function (FRF), in this work the procedure is based on the EMI principle but all analysis is conducted directly in time-domain. For this, the PCC are computed from the time response of PZT (Lead Zirconate Titanate) transducers bonded to the monitored structure, which act as actuator and sensor at the same time. The procedure is carried out exciting the PZT transducers using a wide band chirp signal and getting their time responses. The PCC are obtained in both healthy and damaged conditions and used to compute statistics indexes. Tests were carried out on an aircraft aluminum plate and the results have demonstrated the effectiveness of the proposed method making it an excellent approach for SHM applications. Finally, the results using EMI signals in both frequency and time responses are obtained and compared. © The Society for Experimental Mechanics 2014.

Desenvolvimento de metodologias para a localização de intruso em ambientes indoor

O presente trabalho propõe metodologias para detectar a presença e localizar um intruso em ambientes indoor, 2-D e 3-D, sendo que neste último, utiliza-se um sistema cooperativo de antenas e, em ambos os casos, o sistema é baseado em radares multiestáticos. Para obter uma alta resolução, o radar opera com pulsos UWB, que possuem amplitude espectral máxima em 1 GHz para ambientes 2-D e, pulsos de banda larga com frequências entre 200 MHz e 500 MHz para ambientes 3-D. A estimativa de localização, para os ambientes bidimensionais, é feita pela técnica de otimização Enxame de Partículas - PSO (Particle Swarm Optimization), pelo método de Newton com eliminação de Gauss e pelo método dos mínimos quadrados com eliminação de Gauss. Para o ambiente tridimensional, foi desenvolvida uma metodologia vetorial que estima uma possível região de localização do intruso. Para a simulação das ondas eletromagnéticas se utiliza o método numérico FDTD (Diferenças Finitas no Domínio do Tempo) associado à técnica de absorção UPML (Uniaxial Perfectly Matched Layer) com o objetivo de truncar o domínio de análise simulando uma propagação ao infinito. Para a análise do ambiente em 2-D foi desenvolvido o ACOR-UWB-2-D e para o ambiente 3-D foi utilizado o software LANE SAGS.

Projeto de um monopolo Hi para aplicações no sistema brasileiro de TV digital

A presente pesquisa trata o projeto e análise de uma antena monopolo planar com geometria modificada visando sua utilização para recepção do sinal de TV digital operante no Brasil na faixa de 470 MHz a 806 MHz. Faixa essa contida no espectro de UHF – Ultra High Frequency (300 MHz a 3 GHz). Para desenvolvimento desse trabalho foi tomado como referência à antena denominada “The Hi Monopole”. Que originalmente foi apresentada para operar em sistemas UWB (Ultra Wide Band) em 3,1 a 10,6 GHz. Para o desenvolvimento do trabalho proposto, diferentes técnicas de adequação da antena podem ser utilizadas para operação em banda larga, tais como: modificação na estrutura da antena, carregamento resistivo, chaveamento, utilização de elementos parasitas e estruturas de casamento. O projeto de antenas banda larga pode ser realizado a partir de três abordagens diferentes: domínio do tempo, domínio da frequência e método de expansão por singularidades. O método no domínio da frequência foi empregado neste trabalho para o projeto da antena proposta, algumas das técnicas supracitadas foram analisadas almejando o aumento da largura de banda, sendo confeccionado um protótipo da antena para validar os conceitos empregados. A antena foi então projetada para a faixa de 470 MHz a 890 MHz. O protótipo construído para essa mesma faixa apresentou bons resultados, o que valida à técnica empregada. Aspectos positivos e negativos do uso desta técnica são discutidos ao longo do trabalho. O programa computacional comercial CST® MICROWAVE STUDIO, baseado na Técnica da Integração Finita (FIT), foi usado para simulações no domínio da frequência.

Desenvolvimento e otimização de materiais nanocristalinos para células solares sensibilizadas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A relationship between structural and electronic order-disorder effects and optical properties in crystalline TiO2 nanomaterials

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)