石英波片偏光干涉谱的研究

根据石英晶体双折射率的色散特性,对石英波片的偏光干涉谱进行了理论分析和数值模拟,提出了一种石英波片延迟量和厚度的偏光干涉标定法。即由偏光干涉谱,可以得出石英波片在200～2000 nm宽光谱范围内的延迟量；通过对长波段的偏光干涉谱极值波长的精确判断,可以准确地计算出该石英波片的厚度。利用Lambda 900 紫外可见近红外分光光度计对一片石英波片的偏光干涉谱进行了测量。在波长精度为0.1 nm的情况下,测量的厚度精度为0.1 μm。误差分析结果表明,通过提高光谱的最小分辨力及选择较长的光谱波段进行测量计算

Preparation, characterization and gas sensing properties of nickel octa-iso-pentyloxynaphthalocyanine spin-coating films

Spin-coated films of nickel 1,6,10,15,19,24,28,33-octa-iso-pentyloxy-2,3-naphthalocyanine complex were obtained and characterized by UV-vis absorption spectroscopy. A linear relationship between the absorbance and solution concentration was observed. Low concentration solutions could afford smooth and homogeneous film surfaces as indicated by atomic force microscopy. The film structure was studied by small angle X-ray diffraction. The films were used for NO2 sensing experiments. The results indicate that the elevation of sensing temperature can shorten the response time and increase recovery ratio and response magnitude of the sensing films. High NO2 concentration can also shorten response time. (C) 2008 Elsevier B.V. All rights reserved.

Effect of processing parameters on the optical properties of TiO2/ormosil planar waveguide

Hybrid TiO2/ormosil waveguiding films have been prepared by the sol-gel method at low thermal treatment temperature of 150° C. The influence of processing parameters including the molar ratios of titanium butoxide (Ti(OBu)(4))/3-glycidoxypropyltrimethoxysilane (GLYMO) and H2O/Ti(OBu)(4) (expressed as R), especially aging of sot on the optical properties was investigated. The optical properties of films were measured with scanning electron microscope (SEM), UV/VIS/NIR spectrophotometer (UV-Vis), m-line and the scattering-detection method. The results indicate that the film thickness increases with the increase of sol aging time, but the variation of refractive index as a function of sot aging time depends on the relative ratios of GLYMO to Ti(OBu)(4). Higher transmittance and lower attenuation of the planar waveguide can be obtained in the sol with lower Ti(OBu)(4) contents and shorter aging time.

Preparation and characterization of hybrid ZnO/ormosils films

Hybrid ZnO/ormosils Elms are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150 degrees C, the refractive index and thickness of the film are 1.413, 2.11 mu m, respectively. Higher temperatures (350 degrees C, 550 degrees C) change the Elm microstructure severely, and then decrease the transmittance of the films.

熔制条件对铋酸盐玻璃性质的影响

采用传统的玻璃熔融法制备了组成为60Bi2O3-20B2O3-15SiO2-5La2O3(mol%)的铋酸盐玻璃， 系统研究了不同工艺过程对玻璃性能的影响. 分析了样品ICP的成分，扫描电镜，X-射线衍射谱， 差热分析和紫外-可见-近红外透过光谱测试. 结果表明：使用刚玉坩埚能提高玻璃的抗析晶稳定性 和透过率，陶瓷坩埚和白金坩埚均受到严重腐蚀，玻璃组分也随之发生很大变化. 当熔制温度从1 100 ℃变化到1 300 ℃时，玻璃的颜色从浅黄色变到深红棕色. 尤其是白金粒子被腐蚀进入玻璃液 后，玻璃中很容易形成纳米颗粒或者团聚形成胶体粒子，在玻璃中形成色散源，加深玻璃的颜色， 降低透过率. 1 300 ℃下，白金粒子起到晶核剂的作用，生成Bi2Pt2O7和BiB3O6晶相，导致玻璃失透.

Effects of annealing on microstructure and optical properties of TiO2 sculptured thin films

The evolution of microstructure and optical properties of TiO2 sculptured thin films under thermal annealing is reported. XRD, field emission SEM, UV-Vis-NIR spectra are employed to characterize the microstructural and optical properties. It is found that the optimum annealing temperature for linear birefringence is 500 degrees C. The maximum of transmission difference for linear birefringence is up to 18%, which is more than twice of that in as-deposited thin films. In addition, the sample annealed at 500 degrees C has a minimum of column angle about 12 degrees C. The competitive process between the microstructural and optical properties is discussed in detail. Post-annealing is a useful method to improve the linear birefringence in sculptured thin films for practical applications.

Structure and optical properties of Nb2O5 sculptured thin films by glancing angle deposition

Nb2O5 sculptured thin. films deposited by electron beam evaporation with glancing angle deposition were prepared. Nb2O5 sculptured thin. films with tilted columns are optical anisotropy. XRD, SEM, UV-vis-NIR spectra are employed to characterize the microstructure and optical properties. The maximum of birefringence (Delta n) is up to 0.045 at alpha = 70 degrees with packing density of 0.487. With increasing the deposition angle, refractive index and packing density of Nb2O5 STF are decreasing. The relationship among deposition parameter, microstructure and optical properties was investigated in detail. (C) 2008 Elsevier B. V. All rights reserved.

Controlled amine functionality in self-assembled monolayers via the hidden amine route: chemical and electronic tunability.

A synthetic strategy for fabricating a dense amine functionalized self-assembled monolayer (SAM) on hydroxylated surfaces is presented. The assembly steps are monitored by X-ray photoelectron spectroscopy, Fourier transform infrared- attenuated total reflection, atomic force microscopy, variable angle spectroscopic ellipsometry, UV-vis surface spectroscopy, contact angle wettability, and contact potential difference measurements. The method applies alkylbromide-trichlorosilane for the fabrication of the SAM followed by surface transformation of the bromine moiety to amine by a two-step procedure: S(N)2 reaction that introduces the hidden amine, phthalimide, followed by the removal of the protecting group and exposing the free amine. The use of phthalimide moiety in the process enabled monitoring the substitution reaction rate on the surface (by absorption spectroscopy) and showed first-order kinetics. The simplicity of the process, nonharsh reagents, and short reaction time allow the use of such SAMs in molecular nanoelectronics applications, where complete control of the used SAM is needed. The different molecular dipole of each step of the process, which is verified by DFT calculations, supports the use of these SAMs as means to tune the electronic properties of semiconductors and for better synergism between SAMs and standard microelectronics processes and devices.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Preparation and optical property of a novel hydrophobic anti-reflection coating for KDP crystal

A novel inorganic-organic hybrid hydrophobic anti-reflection silica film used for laser crystal was obtained by sol-gel process. The film consisted of silica sols mixed with a small amount of polymethyl methacrylate (PMMA) or polystyrene (PS). The optical transparency, hydrophobic property and surface morphology of the film were characterized by UV-VIS-NIR spectrophotometer; contact angle instrument and Scanning Electron Microscopy (SEM), respectively. The results showed that the anti-reflection coating had good hydrophobility and optical transparency from 400 nm to 1200 nm. The contact angle reached to 130-140 degrees. SEM images indicated the hydrophobic films modified with PMMA or PS had compact structure compared to the pure silica sol film. (C) 2008 Elsevier B.V. All rights reserved.

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.

94MeV Xe离子辐照引起的薄膜硅光学带隙变化研究；Modification of Optical Bandgap of Thin Silicon Films Induced by 94 MeV Xe Ion Irradiation

室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。

薄膜硅材料的重离子辐照改性研究

选择具有重要应用价值的纳米晶硅及非晶硅薄膜材料，对比研究了快重离子辐照薄膜Si材料所引起的辐照效应，主要有如下工作： 1) 用等离子增强化学气相沉积法(PECVD)以及常压化学气相沉积法(APCVD)在玻璃衬底上制备纳米晶硅薄膜(nc-Si)与非晶硅(a-Si)薄膜。制备的nc-Si和a-Si薄膜的厚度分别为∼200 nm和∼400 nm。 2) 室温下，用94 MeV的Xe离子辐照nc-Si和a-Si薄膜以及单晶硅(c-Si，晶向(100)，电阻率0.001 Ω·cm，作为对比样品)，辐照量分别为1.0×1011、1.0×1012 和1.0×1013 ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪、Raman谱仪进行检测分析，对比研究纳米晶、非晶、单晶硅样品的光学性能及结构的变化。 3) 通过UV/VIS/NIR谱，我们得到了不同结构硅材料的光学带隙值及折射率随辐照量的变化规律。通过分析硅材料辐照前后Raman谱的变化，讨论了不同晶体结构的影响。 4) 结合UV/VIS/NIR与Raman结果初步讨论了硅材料结构影响辐照效应的机理。对于a-Si薄膜样品，辐照可能引起了样品局域的再结晶。对于nc-Si薄膜样品，Xe离子辐照先引起nc-Si晶粒的破碎，使样品出现非晶化过程，然后再遵从a-Si薄膜样品中离子辐照效应变化规律

Two novel triphenylamine-substituted poly(p-phenylenevinylene) derivatives: synthesis, photo- and electroluminescent properties

Two novel triphenylamine-substituted poly(p-phenylenevinylene) derivatives, P1 and P2, have been successfully synthesized through the Witting-Horner reaction. The structures and properties of the monomers and the resulting polymers were characterized by using H-1 NMR, FT-IR, GPC, TGA, UV-vis absorption spectroscopy, cyclic voltammetry (CV) and electroluminescence (EL) spectroscopy