Microwave irradiation-assisted method for the deposition of adherent oxide films on semiconducting and dielectric substrates

We report a method for the deposition of thin films and thick coatings of metal oxides through the liquid medium, involving the micro waveirradiation of a solution of a metal-organic complex in a suitable dielectric solvent. The process is a combination of sol-gel and dip-coating methods, wherein coatings can be obtained on nonconducting and semiconducting substrates, within a few minutes. Thin films of nanostructured ZnO (wurtzite) have been obtained on Si(100), glass and polymer substrates, the nanostructure determined by process parameters The coatings are strongly adherent and uniform over 15 mm x 15 mm, the growth rate similar to 0.25 mu m/min Coatings of nanocrystalline Fe2O3 and Ga2O3 have also been obtained The method is scalable to larger substrates, and is promising as a low temperature technique for coating dielectric substrates, including flexible polymers. (C) 2010 Elsevier B.V. All rights reserved.

A simple method for the measurement of stress in evaporated thin films by real-time holographic interferometry

The properties of thin films depend to a large extent upon their mechanical stability which in turn is dependent on the intrinsic stresses developed during evaporation. This paper describes a simple method for the measurement of stresses in thin films by the use of real-time holographic interferometry.

Formation of Single-Phase Indium Selenide Thin Films by Elemental Evaporation

Formation of crystalline, monophasic indium selenide (InSe) thin solid films by elemental evaporation on hot glass substrates (400 to 530 K) is reported. The compound formation as well as the composition of the formed films are confirmed by X-ray photoelectron spectroscopy (XPS) analysis. The crystallinity of the rhombohedral InSe films can be improved by post-depositional annealing for t < 30 min at 533 K. The InSe thin films become Se-deficient at higher temperatures of deposition or longer duration of annealing. Optical studies reveal the bandgap to be around 1.29 eV. Under optimum conditions of preparations the lowest resistivity of ≈ 12.8 Ω cm is obtained. Durch Verdampfen aus den Elementen auf heiße Glassubstrate (400 bis 530 k) werden dünne, kristalline, einphasige Indiumselenid (InSe)-Festkörperschichten gebildet. Sowohl die Bildung der Verbindung als auch die Zusammensetzung der Schichten werden durch Röntgen-Photoelektronenspektroskopie (XPS) untersucht. Die Kristallinität der rhomboedrischen InSe-Schichten kann durch eine Temperung bei 533 K für t < 30 min nach der Abscheidung verbessert werden. Die dünnen InSe-Schichten zeigen nach Abscheidung bei höheren Temperaturen oder längerer Temperungsdauer einen Se-Unterschuß. Optische Untersuchungen ergeben, daß die Bandlücke bei etwa 1,29 eV liegt. Unter optimalen Präperationsbedingungen wird ein niedrigster Widerstand von ≈ 12.8 Ω cm erreicht.

Structural, dielectric and ferroelectric properties of multilayer lithium tantalate thin films prepared by sol-gel technique

Multilayer lithium tantalate thin films were deposited on Pt-Si Si(111)/SiO2/TiO2/Pt(111)]substrates by sol-gel process. The films were annealed at different annealing temperatures (300, 450 and 650 degrees C) for 15 min. The films are polycrystalline at 650 degrees C and at other annealing conditions below 650 degrees C the films are in amorphous state. The films were characterized using X-ray diffraction, atomic force microscopy (AFM) and Raman spectroscopy. The AFM of images show the formation of nanograins of uniform size (50 nm) at 650 degrees C. These polycrystalline films exhibit spontaneous polarization of 1.5 mu C/cm(2) at an application of 100 kV/cm. The dielectric constant of multilayer film is very small (6.4 at 10 kHz) as compared to that of single crystal. (C) 2010 Elsevier B.V. All rights reserved.

Electrochemical preparation of few layer-graphene nanosheets via reduction of oriented exfoliated graphene oxide thin films in acetamide-urea-ammonium nitrate melt under ambient conditions

Electrochemical reduction of exfoliated graphene oxide, prepared from pre-exfoliated graphite, in acetamide-urea-ammonium nitrate ternary eutectic melt results in few layer-graphene thin films. Negatively charged exfoliated graphene oxide is attached to positively charged cystamine monolyer self-assembled on a gold surface. Electrochemical reduction of the oriented graphene oxide film is carried out in a room temperature, ternary molten electrolyte. The reduced film is characterized by atomic force microscopy (AFM), conductive AFM, Fourier-transform infrared spectroscopy and Raman spectroscopy. Ternary eutectic melt is found to be a suitable medium for the regulated reduction of graphene oxide to reduced graphene oxide-based sheets on conducting surfaces. (C) 2010 Elsevier B.V. All rights reserved.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Sputter deposited LiPON thin films from powder target as electrolyte for thin film battery applications

Lithium phosphorus oxynitride (LiPON) thin films as solid electrolytes were prepared by reactive radio frequency (rf) magnetron sputtering from Li3PO4 powder compact target. High deposition rates and ease of manufacturing powder target compared with conventional ceramic Li3PO4 targets offer flexibility in handling and reduce the cost associated. Rf power density varied from 1.7 Wcm(-2) to 3 Wcm(-2) and N-2 flow from 10 to 30 sccm for a fixed substrate to target distance of 4 cm for best ionic conductivity. The surface chemical analysis done by X-ray photoelectron spectroscopy showed incorporation of nitrogen into the film as both triply, NE and doubly. Nd coordinated form. With increased presence of NE, ionic conductivity of LiPON was found to be increasing. The electrochemical impedance spectroscopy of LiPON films confirmed an ionic conductivity of 1.1 x 10(-6) Scm(-1) for optimum rf power and N-2 flow conditions. (C) 2011 Elsevier B.V. All rights reserved.

Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Rapid thermal processed thin films of reactively sputtered Ta2O5

Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 x 10(-8) A cm(-2). A rapid thermal annealing process at temperatures above 700 degrees C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 degrees C increased to 45 and its leakage current density lowered to 2 x 10(-8) A cm(-2). The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

Process-kinetics in facing targets sputtering of multi-component oxide thin films

The kinetics of the processes in facing targets sputtering of multicomponent oxide films is presented. The novel configuration of the process exhibits an enhanced ionization efficiency. Discharge diagnostics performed using optical emission spectroscopy revealed strong dependence of plasma parameters on process conditions. Numerical simulation based on thermalization and diffusion of sputtered atoms has been performed to estimate the transport efficiency in off-axis mode. Composition, structure and epitaxial quality of YBa2Cu3O7-x films prepared was found to be strongly dependent on atomic flux ratios (of Cu/Y and Ba/Y) arriving at the substrate, resputtering effect and phase stability of YBa2Cu3O7-x These studies have been shown to be useful in understanding the complex processes that occur in sputtering of multicomponent films. (C) 1999 Elsevier Science S.A. All rights reserved.

Investigation of reversible and irreversible polarizations in thin films of SrBi2(Ta-0.5,Nb-0.5)(2)O-9

The reversible and irreversible components of the total polarization in a thin film of SrBi2(Ta-0.5,Nb-0.5)(2)O-9 were calculated. The C-V loop was integrated to obtain the reversible part of the total polarization. The reversible polarization was only 20% of the total polarization and showed almost no hysteresis. However, the dielectric constant due to the total polarization was almost the same as that for the reversible polarization in the saturation region of the large signal P-E hysteresis loop. The reversible part was subtracted from the total polarization to calculate the irreversible counterpart of it. The irreversible polarization showed a near-square shaped hysteresis loop, while the reversible polarization was obeying the Rayleigh law. The small signal hysteresis was simulated from the parameters obtained from the Rayleigh-curve fit with the experimental curve and then it was compared with the result obtained from direct measurement with small amplitude. (C) 2002 Elsevier Science B.V. All rights reserved.

Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a beta-diketonate complex of cobalt, namely cobalt (11) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate. (C) 2002 Elsevier Science B.V. All rights reserved.

A scanning tunneling microscopy and potentiometry study of epitaxial thin films of La0.7Ca0.3MnO3

To investigate the role of grain boundaries and other growth related microstructure in manganite films, a scanning tunneling microscope is used to simultaneously probe surface topography and local potential distribution under current flow at nanometer level in films of epitaxial thin films of La0.7Ca0.3MnO3 deposited on single crystal SrTiO3 and NdGaO3 substrate by laser ablation. We have studied two types of films strained and strain relaxed. Thin (50nm) films (strained due to lattice mismatch between substrate and the film) show step growth (unit cell steps) and have very smooth surfaces. Relatively thicker films (strain relaxed, thickness 200nm) do not have these step growths and show rather smooth well connected grains. Charge transport in these films is not uniform on the nanometer level and is accompanied by potential jumps at the internal surfaces. In particular scattering from grain boundaries results in large variations in the local potential resulting in fields as high as 104-105V/cm located near the grain boundaries. We discuss the role of local strain and strain inhomogeneties in determining the current transport in these films and their resistance and magnetoresistivity. In this paper we attempt to correlate between bulk electronic properties with microscopic electronic conduction using scanning tunneling microscopy and scanning tunneling potentiometry.

High energy Li ion irradiation effects in ferroelectric PZT and SBT thin films

The ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) and SrBi2Ta2O9 (SBT) thin films were prepared by laser ablation technique. The dielectric analysis, capacitance-voltage, ferroelectric hysteresis and DC leakage current measurements were performed before and after 50 MeV Li3+ ion irradiation. In both thin films, the irradiation produced some amount of amorphisation, considerable degradation in the ferroelectric properties and change in DC conductivity. On irradiation of these thin films, the phase transition temperature [T-c] of PZT decreased considerably from 628 to 508 K, while SBT exhibited a broad and diffuse transition with its T-c decreased from 573 to 548 K. The capacitance-voltage curve at 100 kHz showed a double butterfly loop with a large decrease in the capacitance and switching voltage. There was decrease in the ferroelectric hysteresis loop, remanant polarisation and coercive field. After annealing at a temperature of 673 K for 10 min while PZT partially regained the ferroelectric properties, while SBT did not. The DC conductivity measurements showed a shift in the onset of non-linear conduction region in irradiated SBT. The degradation of ferroelectric properties of the irradiated thin films is attributed to the irradiation-induced partial amorphization and the pinning of the ferroelectric domains by trapped charges. The regaining of properties after annealing is attributed to the thermal annealing of the defects generated during the irradiation. (C) 2003 Elsevier Science B.V. All rights reserved.