Studies on arsenical creosote as a wood preservative for marine structures. Part 1. Incorporation of arsenic in creosote at various temperatures

A detailed study of the fortification of normal creosote and low temperature creosote with As sub(2) O sub(3) at 40°C, 50°C, 60°C, 70°C, 80°C and 90°C was carried out. When compared to normal creosote, low temperature creosote has been found to combine more easily with As sub(2) O sub(3) when temperature was . raised from 40 to 90°C. The incorporated arsenic values obtained shows that low temperature creosote with high phenolic content, retains considerably more As sub(2) O sub(3) and a maximum of 0.2180% w/w can be incorporated in low temperature creosote at 90°C.

Effects of gamma radiation and -20°C temperatures on the shelf life of Hilsa, Tenualosa ilisha (ham.-Buch. 1822)

The combined effect of radiation and refrigeration on the shelf life of hilsa, Tanualosa ilisha was studied by monitoring the microbiological, chemical and sensory changes of unirradiated and irradiated fish samples using low dose irradiation, doses of 300 krad, 600 krad and 900 krad. Irradiation (900 krad) dramatically reduced population of bacteria, namely total viable counts 48.850cfu per gm for unirradiated, 31.850cfu per gm and 19.600cfu per gm of 300 krad and 600 krad, respectively. The effect was more pronounced at the higher dose (900 krad), total viable count were 14.100cfu per gm. Another microbial indicator total mould counts (TMC) was 8.750cfu per gm, 6.350cfu per gm, and 19.600cfu per gm for 300 krad and 600 krad, respectively. The effect was more pronounced at the higher dose (900 krad) where total viable counts were 14,100cfu per gm. Total volatile nitrogen values increased slowly attaining a value of 101.02mgN per 100gm for unirradiated T. ilisha during refrigerated storage, whereas for irradiated fish, lower values of 71.13, 59.33 and 47.03mgN per 100gm muscle were recorded. Sensory evaluation showed a good correlation with bacterial populations on the basis of overall acceptability scores.

Accelerated ageing of a stabilised/solidified contaminated soil at elevated temperatures

Despite the widespread use of stabilisation/solidification (S/S) techniques, the validation and the availability of predictive modelling of the behaviour of stabilised/solidified soils in the longer-term is very limited. The authors were involved in the assessment of the behaviour of a contaminated site in the UK treated with cement-based in-situ S/S over the first five years after treatment. In parallel, two experimental methods, namely elevated temperatures and combined elevated temperatures and accelerated carbonation, were used in the laboratory to model accelerated ageing of the site soil. A graphical technique, based on the Arrhenius equation, was then used to model the laboratory observations and the in-situ five-year behaviour. The paper presents the details of the two experimental methods used for the accelerated ageing of stabilised/solidified model site soil, the numerical predictive model and a comparison between the results of the two experimental techniques and with the site results. © 2005 Taylor & Francis Group.

Kinetic control of catalytic CVD for high-quality graphene at low temperatures.

Low-temperature (∼600 °C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio ≤0.08, and carrier mobilities of ≥3000 cm(2) V(-1) s(-1) on SiO(2) support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.

Effects of incubation temperatures on embryonic development in the Asian yellow pond turtle

The Asian yellow pond turtle, Mauremys mutica (Cantor), is a potential aquaculture target in China owing to the higher values for food and remedy than other species of turtle. In this study, color and morphological changes of fertilized eggs were observed during embryogenesis, and the effects of incubation temperature on embryonic development were analyzed. Both calcium layer and membrane layer are thicker in the middle portion of egg-shell than that in the terminal portion, and become thinner after embryo hatching than before embryonic development. Significant change in the white spot and subsequent white ring on the eggshell occurs during embryonic development. Of five different incubation temperatures used to investigate the effects of incubation temperatures on embryonic development, 29.0 +/- 0.5 degrees C was optimal for embryo survival and development. Moreover, the incubation temperature of 33.0 +/- 0.5 degrees C was harmful effect to embryonic development. The data provide important and useful information for husbandry and management of the Asian yellow pond turtle. (c) 2006 Elsevier B.V. All rights reserved.

Quantitative relationships between molecular structures, environmental temperatures and octanol-air partition coefficients of PCDD/Fs

A concise quantitative model that incorporates information on both environmental temperature M and molecular structures, for logarithm of octanol-air partition coefficient (K-OA) to base 10 (logK(OA)) of PCDDs, was developed. Partial least squares (PLS) analysis together with 14 quantum chemical descriptors were used to develop the quantitative relationships between structures, environmental temperatures and properties (QRSETP) model. It has been validated that the obtained QRSETP model can be used to predict logK(OA) of other PCDDs. Molecular size, environmental temperature (T), q(+) (the most positive net atomic charge on hydrogen or chlorine atoms in PCDD molecules) and E-LUMO (the energy of the lowest unoccupied molecular orbital) are main factors governing logK(OA) of PCDD/Fs under study. The intermolecular dispersive interactions and thus the size of the molecules play a leading role in governing logK(OA). The more chlorines in PCDD molecules, the greater the logK(OA) values. Increasing E-LUMO values of the molecules leads to decreasing logK(OA) values, implying possible intermolecular interactions between the molecules under study and octanol molecules. Greater q(+) values results in greater intermolecular electrostatic repulsive interactions between PCDD and octanol molecules and smaller logK(OA) values. (C) 2002 Elsevier Science B.V. All rights reserved.

Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films

Ga1-xMnxAs films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective Mn concentrations of x(eff)approximate to 0.10 still have a Curie temperature T-C smaller than 195 K contradicting mean-field predictions. The analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on T-C is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. This result questions the perspective of room-temperature ferromagnetism in highly doped GaMnAs.

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).

Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures

We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures (<= 560 degrees C) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the QDs. We demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved.