Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films


Autoria(s): Khazen K (Khazen Kh.); von Bardeleben HJ (von Bardeleben H. J.); Cantin JL (Cantin J. L.); Mauger A (Mauger A.); Chen L (Chen L.); Zhao JH (Zhao J. H.)
Data(s)

2010

Resumo

Ga1-xMnxAs films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective Mn concentrations of x(eff)approximate to 0.10 still have a Curie temperature T-C smaller than 195 K contradicting mean-field predictions. The analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on T-C is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. This result questions the perspective of room-temperature ferromagnetism in highly doped GaMnAs.

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国际

Identificador

http://ir.semi.ac.cn/handle/172111/11332

http://www.irgrid.ac.cn/handle/1471x/60767

Idioma(s)

英语

Fonte

Khazen K (Khazen Kh.), von Bardeleben HJ (von Bardeleben H. J.), Cantin JL (Cantin J. L.), Mauger A (Mauger A.), Chen L (Chen L.), Zhao JH (Zhao J. H.).Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films.PHYSICAL REVIEW B,2010,81(23):Art. No. 235201

Palavras-Chave #半导体材料 #AMORPHOUS FERROMAGNET #CURIE-TEMPERATURE #CRITICAL-BEHAVIOR #RENORMALIZATION GROUP #DIPOLAR INTERACTIONS #CRITICAL EXPONENTS #MAGNETIC EQUATION #ALLOYS #STATE #SEMICONDUCTORS
Tipo

期刊论文