SOI Waveguides Fabricated by Wet-Etching Method

SOI waveguides fabricated by wet-etching method are demonstrated. The single mode waveguide and 1×2 3dB BBI splitter are analyzed and designed by three dimensional beam propagation method to correct the error of effective index method and guided mode method. The devices are fabricated. Excellent performances, such as low propagation loss of -1.37dB/cm, low excess of -2.2dB, and good uniformity of 0.3dB, are achieved.

Mode theory and analysis of planar array waveguides

Bloch modes can be excited in planar array due to its periodic lateral refractive index. The power coupled into each eigenmode of the array waveguides is calculated through the overlap integrals of the input field with the eigenmode fields of the coupled infinite array waveguides projected onto the x-axis. Low losses can be obtained if the transition from the array to the free propagation region is adiabatic. Due to the finite resolution of lithographic process the gap between the waveguides will stop abruptly, however, when the waveguides come into too close together. Calculation results show that losses will occur at this discontinuity, which are dependent on the ratio of the gap between the waveguides and grating pitch and on the confinement of field in the array waveguides. Tapered waveguides and low index contrast between the core and cladding layers can lower the transmitted losses.

塑料闪烁体探测器阵列及RIB中的大面积电离室

本文共分为两个部分： 第一部，详细阐述了闪烁体探测器的原理。介绍了研制的用于HIRFL的TR4终端上的多单元(Phoswich)闪烁体探测器阵列，其目的是测量中能重离子核反应中出射粒子的电荷、能量、位置和粒子达到的时间信息。并给出了在初步测试中取得的结果。测试表明，该探测系统有很好的粒子鉴别能力． 第二部分，介绍了研制的大面积双叠层电离室，它是放射性核素次级束流线实验终端的主要探测设备之一，为次级反应产物提供两个ΔE信号．在首次放射性核束调试中取得了满意的结果.

RIBLL上RIB的产额计算、分离和控制

本文概述了关于双消色次级束系统的束流传输效率的程序计算，及其相关的物理过程。程序包含了束流与靶，降能片之间的各种反应。描述并分析了二次束流传输系统。还介绍了RIBLL中束流诊断元件的功能及其控制，并给出了实验初步结果与程序计算结果的比较。

Rashba electron transport in 1D quantum waveguides

City Univ Hong Kong

Uniform AMoO(4):Ln (A = Sr2+, Ba2+; Ln = Eu3+, Tb3+) submicron particles: Solvothermal synthesis and luminescent properties

Rare-earth ions (Eu3+, Tb3+) doped AMoO(4) (A = Sr, Ba) particles with uniform morphologies were successfully prepared through a facile solvothermal process using ethylene glycol (EG) as protecting agent. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), Fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) spectra and the kinetic decays were performed to characterize these samples. The XRD results reveal that all the doped samples are of high purity and crystallinity and assigned to the tetragonal scheelite-type structure of the AMoO(4) phase. It has been shown that the as-synthesized SrMoO4:Ln and BaMoO4:Ln samples show respective uniform pea nut-like and oval morphologies with narrowsize distribution. The possible growth process of the AMoO(4):Ln has been investigated in detail. The EG/H2O volume ratio, reaction temperature and time have obvious effect on themorphologies and sizes of the as-synthesized products.

Silica supported submicron SiO2@Y2SiO5 : Eu3+ and SiO2@Y2SiO5 : Ce3+/Tb3+ spherical particles with a core-shell structure: Sol-gel synthesis and characterization

X-1-y(2)SiO(5):Eu3+ and X-1-Y2SiO5:Ce3+ and/or Tb3+ phosphor layers have been coated on nonaggregated, monodisperse, submicron spherical SiO2 particles by a sol-gel process, followed by surface reaction at high temperature (1000 degrees C), to give core/shell structured SiO2@Y2SiO5:Eu3+ and SiO2@Y2SiO5:Ce3+/Tb3+ particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), TEM, photoluminescence (PL), low voltage cathodoluminescence (CL), and time-resolved PL spectra and lifetimes are used to characterize these materials. The XRD results indicate that X-1-Y2SiO5 layers have been successfully coated on the sur- face Of SiO2 particles, as further verified by the FESEM and TEM images. The PL and CL studies suggest that SiO2@Y2SiO5:Eu3+, SiO2@Y2SiO5:Tb3+ (or Ce3+/Tb3+), and SiO2@Y2SiO5:Ce3+ core/shell particles exhibit red (Eu3+, 613 rim: D-5(0)-F-7(2)), green (Tb3+, 542nm: D-5(4)-F-7(5)), or blue (Ce3+, 450nm: 5d-4f) luminescence, respectively. Pl, excitation, emission, and time-resolved spectra demonstrate that there is an energy transfer from Ce3+ to Tb3+ in the SiO2@Y2SiO5:Ce3+,Tb3+ core/shell particles.

The design of curved optical waveguides : analytical and numerical analysis

A model for understanding the formation and propagation of modes in curved optical waveguides is developed. A numerical method for the calculation of curved waveguide mode profiles and propagation constants in two dimensional waveguides is developed, implemented and tested. A numerical method for the analysis of propagation of modes in three dimensional curved optical waveguides is developed, implemented and tested. A technique for the design of curved waveguides with reduced transition loss is presented. A scheme for drawing these new waveguides and ensuring that they have constant width is also provided. Claims about the waveguide design technique are substantiated through numerical simulations.

Sergio Daris, Papiri documentari greci del fondo Palau-Ribes (P. Palau Rib.) Barcelone, 1995

info:eu-repo/semantics/published

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Optoelectronic packaging interfaces for submicron alignment (OPISA) and the dynamics of laser spot weld formation

The work presented in this paper is part of the OPISA project. This is a collaborative research project between the University of Greenwich and Bookham Technology. This report describes some of the initial work undertaken towards the goal of investigating optoelectronic packaging where alignment issues between optical sources and fibers can arise as part of the fabrication process. The focus of this study is on charting the dynamics of laser spot weld formation. This paper introduces some of the initial simulation work that has been undertaken and presents a model describing a transient heat source applied from a laser pulse to weld a stainless steel sleeve and ferrule and the resulting weld formation