O Eu construído : Identidade pessoal e consciência de Si

O problema da identidade pessoal, apresentado na nossa dissertação, tem como preocupação central discernir as condições que viabilizam a sua construção e permanência através do tempo, tendo como paradigma de interpretação o problema da relação do sujeito consigo próprio, com os outros e com o universo simbólico duma determinada época histórica. Assim, a identidade pessoal surge-nos indissociável da respectiva relação com o contexto sócio-cultural da contemporaneidade, onde a coexistência de múltiplos e díspares quadros de referência, impulsionam o eu em direcções distintas, provocando a sua exposição a modelos, valores e estilos de vida diferentes, por vezes até antagónicos, pela proliferação e intensificação dos processos de interacção social. A interioridade do sujeito existencial está agora “colonizada” por uma pluralidade de vozes, que concorrem entre si reclamando o seu direito à existência. Neste contexto, defendemos a ideia de que compete ao sujeito retirar de cada uma delas os elementos pertinentes que permitam a elaboração dos conteúdos pessoais da sua própria interioridade, ou seja, compete ao eu fazer uma síntese hermenêutica de carácter egológico que permita delinear os contornos de uma subjectividade distinta das demais. Esta ideia de identidade enquanto projecto pessoal, construído reflexivamente, dá origem a uma biografia organizada e coerente, uma escolha sempre provisória e continuamente revisitada entre mundos possíveis ou estados possíveis do mundo e do eu. É um processo individual de construção da identidade e do sentido, que transforma a “procura de si” num exercício constante de autoquestionamento existencial. Neste contexto, a interioridade contemporânea emerge a partir de uma rede de relações múltiplas que confrontam o eu com uma variedade enorme de experiências e situações existenciais, requerendo a capacidade e a elasticidade subjectivas necessárias a uma permanente interpretação do mundo e de si próprio, gerando um sujeito simultaneamente múltiplo e integrado, dotado de razão e de imaginação, capaz de construir e recriar continuamente novas formas constitutivas de si. No nosso trabalho, o problema da identidade pessoal não é perspectivado segundo uma concepção essencialista ou substancialista, baseada na imutabilidade dos indivíduos, mas sim numa perspectiva processual, segundo a qual a identidade é uma construção em permanente devir, uma consciência de si e da respectiva temporalidade. Neste sentido, o eu da contemporaneidade deve ser entendido como um processo em curso, uma identidade pluridimensional, que se constrói e desconstrói sem cessar, no âmago das diferentes relações que estabelece, quer consigo próprio (problema da reflexividade e da consciência de si), quer com os outros (problema da linguagem e da intersubjectividade comunicacional), quer ainda da ética e da orientação para o bem. Assim, a identidade pessoal é inseparável do conceito de alteridade, sendo o outro interno (dialogicidade da consciência de si) ou externo (intersubjectividade comunicacional). Esta concepção da identidade como construção e multiplicidade – construtivismo subjectivo - que defendemos no nosso trabalho, requer uma “gestão” correcta das diversas facetas do eu, actualizadas em função de contextos de interacção específicos, no sentido do auto-aperfeiçoamento de si, pela edificação e revisão constantes de uma matriz identitária forte e diferenciadora. Esta deve ser entendida não num sentido mecanicista, mas enquanto matriz em aberto, que se vai desdobrando e desocultando no fluir da temporalidade, onde coexistem vários critérios de unidade, várias modalidades de existir, segundo uma manifestação sucessiva de traços identitários actuais e inactuais, que se fenomenalizam ao longo do tempo num horizonte de experiência possível. Estamos pois a falar de uma subjectividade sem sujeito, no sentido em que não é uma subjectividade logocêntrica, não se desenha a partir da ideia clássica de unidade, nem se fundamenta num critério único de verdade. Antes se constitui através de um movimento contínuo gerador de novas formas de ser e modalidades de existir, no espaço das suas práticas e no horizonte das suas problematizações. É uma subjectividade enraizada no mundo, dialógica e relacional, que vai efectuando sínteses progressivas do seu trajecto existencial, através da dialéctica constante entre identidade e memória, enquanto forma de configuração e reconfiguração narrativa dos aconte - cimentos passados, da acção presente e das expectativas futuras, numa preocupação constante de autoconstrução de um sentido para a vida e para si próprio. A identidade pessoal enquanto matriz egológica que se constitui e reconstitui sem cessar ao longo do tempo é também um acréscimo de ser, um poder ainda vir a ser, reque - rendo por isso a assunção criativa da fragmentação do eu, num exercício permanente de reflexividade e narratividade, através do qual se ordena a temporalidade aleatória e episódica dos acontecimentos numa totalidade significante que conta a história de uma vida. Neste contexto, a ficcionalidade surge como instância de mediação eu-mundo, permitindo a formulação das inquietações e ambivalências do sujeito existencial num outro patamar ou nível discursivo, essencialmente metafórico e hermenêutico, pela retorização do problema original. A conversão do problema numa história permite ao sujeito re-interpretar a realidade para além da mera referencialidade, desvendando significados outros e configurando a sua polissemia intrínseca. A ficcionalidade surge então como poética do tempo reencontrado, descoberta e assunção de facetas insuspeitadas da identidade pessoal, pela reabilitação hermenêutico-criativa do passado, a qual possibilita a compreensão do presente e a perspectivação da acção futura. Esta constituição interpretativa de si a partir dos “testemunhos” da sua própria actividade é inseparável do exercício da “suspeita” e da provocação, no sentido em que o sujeito existencial não deve aceitar pacificamente as primeiras manifestações que acedem à consciência, mas submetê-las ao exercício da dúvida, enquanto forma de procura das motivações mais profundas e autênticas do seu próprio ser, estimuladas não só pela vontade como também pela afectividade, pela associação involuntária ou pela repetição convulsiva. A identidade pessoal enquanto construção e desconstrução permanentes de um eu simultaneamente múltiplo e integrado é, assim, o resultado de uma vida examinada, interpretada e narrada, de um si que se vê a si mesmo como um outro sempre possível.

Field effect and light-assisted a-Si:H sensors for detection of ions in solution

In this paper we present an amorphous silicon device that can be used in two operation modes to measure the concentration of ions in solution. While crystalline devices present a higher sensitivity, their amorphous counterpart present a much lower fabrication cost, thus enabling the production of cheap disposable sensors for use, for example, in the food industry. The devices were fabricated on glass substrates by the PECVD technique in the top gate configuration, where the metallic gate is replaced by an electrolytic solution with an immersed Ag/AgCl reference electrode. Silicon nitride is used as gate dielectric enhancing the sensitivity and passivation layer used to avoid leakage and electrochemical reactions. In this article we report on the semiconductor unit, showing that the device can be operated in a light-assisted mode, where changes in the pH produce changes on the measured ac photocurrent. In alternative the device can be operated as a conventional ion selective field effect device where changes in the pH induce changes in the transistor's threshold voltage.

Deuterium NMR Study of Orientational Order in Cellulosic Network Microfibers

Deuterium NMR was used to investigate the orientational order in a composite cellulosic formed by liquid crystalline acetoxypropylcellulose (A PC) and demented nematic 4'-penty1-4-cyanobiphenyl (5CB-4 alpha d(2)) with the per centage of 85% A PC by weight Three forms of the composite including electro spun microfibers, thin film and bulk samples were analyzed The NMR results initially suggest two distinct scenarios, one whet e the 503-alpha d(2), is confined to small droplets with dimensions smaller than the magnetic coherence length and the other where the 503-alpha d(2) molecules arc aligned with the A PC network chains Polarized optical microscopy (POW from thin film samples along with all the NMR results show the presence of 5CB-alpha d(2) droplets in the composite systems with a nematic wetting layer at the APC-5CB-alpha d(2) interface that experiences and order disorder transition driven by the polymer network N-I transition The characterization of the APC network I-N transition shows a pronounced subcritical behavior within a heterogeneity scenario.

Modification of MOR by desilication treatments: Structural, textural and acidic characterization

The effect of several desilication experimental parameters (base concentration, temperature and time) on the characteristics of MOR zeolite was studied. The samples were characterized by X-ray diffraction, Al-27 and Si-29 MAS-NMR, chemical analysis, and FTIR (framework vibration region). The textural characterization was made by N-2 adsorption and the acidity was evaluated by pyridine adsorption followed by FTIR and by the catalytic model reaction of n-heptane cracking. The alkaline treatments promoted the Si extraction from the zeolite framework, without considerable loss of crystallinity and, as it was envisaged, an important increase of the mesoporous structure was attained. A linear correlation between the number of framework Si per unit cell. N-Si and the asymmetric stretching wavenumber, nu(i), was observed. The acidity characterization shows that the desilicated samples exhibit practically the same acid properties than the parent HMOR zeolite. The optimum desilication conditions were those used to obtain sample M/0.2/85/2, i.e., sample treated with 0.2 M NaOH solution at 85 degrees C for 2 h.

Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.

Automatic assignment of absolute configuration from 1D NMR data

Opposite enantiomers exhibit different NMR properties in the presence of an external common chiral element, and a chiral molecule exhibits different NMR properties in the presence of external enantiomeric chiral elements. Automatic prediction of such differences, and comparison with experimental values, leads to the assignment of the absolute configuration. Here two cases are reported, one using a dataset of 80 chiral secondary alcohols esterified with (R)-MTPA and the corresponding 1H NMR chemical shifts and the other with 94 13C NMR chemical shifts of chiral secondary alcohols in two enantiomeric chiral solvents. For the first application, counterpropagation neural networks were trained to predict the sign of the difference between chemical shifts of opposite stereoisomers. The neural networks were trained to process the chirality code of the alcohol as the input, and to give the NMR property as the output. In the second application, similar neural networks were employed, but the property to predict was the difference of chemical shifts in the two enantiomeric solvents. For independent test sets of 20 objects, 100% correct predictions were obtained in both applications concerning the sign of the chemical shifts differences. Additionally, with the second dataset, the difference of chemical shifts in the two enantiomeric solvents was quantitatively predicted, yielding r2 0.936 for the test set between the predicted and experimental values.

Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors

The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors an analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under [p]- and [n]-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under [n]-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.

Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction

A series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0 sistances around 10(5)Ohm are also measured Simulated results confirm the experimental findings suggesting that the transport in dark depends almost exclusively on field-aided drift while under illumination it is dependent mainly on minority carriers the diffusion.

Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction

A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

Enhanced short wavelength response in laser-scanned-photodiode image sensor using an a-SiC : H/a-Si : H tandem structure

We report in this paper the recent advances we obtained in optimizing a color image sensor based on the laser-scanned-photodiode (LSP) technique. A novel device structure based on a a-SiC:H/a-Si:H pin/pin tandem structure has been tested for a proper color separation process that takes advantage on the different filtering properties due to the different light penetration depth at different wavelengths a-SM and a-SiC:H. While the green and the red images give, in comparison with previous tested structures, a weak response, this structure shows a very good recognition of blue color under reverse bias, leaving a good margin for future device optimization in order to achieve a complete and satisfactory RGB image mapping. Experimental results about the spectral collection efficiency are presented and discussed from the point of view of the color sensor applications. The physics behind the device functioning is explained by recurring to a numerical simulation of the internal electrical configuration of the device.

ITO/SiOx/Si optical sensor with internal gain

A visible/near-infrared optical sensor based on an ITO/SiOx/n-Si structure with internal gain is presented. This surface-barrier structure was fabricated by a low-temperature processing technique. The interface properties and carder transport were investigated from dark current-voltage and capacitance-voltage characteristics. Examination of the multiplication properties was performed under different light excitation and reverse bias conditions. The spectral and pulse response characteristics are analysed. The current amplification mechanism is interpreted by the control of electron current by the space charge of photogenerated holes near the SiOx/Si interface. The optical sensor output characteristics and some possible device applications are presented.

New p-i-n Si : H imager configuration for spatial resolution improvement

Amorphous glass/ZnO-Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1-xCx:H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). An image is projected onto the sensing element and leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout, and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The influence of the intensity of the optical image projected onto the sensor surface is correlated with the sensor output characteristics (sensitivity, linearity blooming, resolution and signal-to-noise ratio) are analysed for different material compositions (0.5 < x < 1). The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity signal and on the spatial resolution are achieved at 0.2 mW cm(-2) light flux by decreasing the n-layer conductivity by the same amount. A physical model supported by electrical simulation gives insight into the image-sensing technique used.