Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction


Autoria(s): Louro, Paula; Vieira, Maria Manuela Almeida Carvalho; Vygranenko, Yuri; Fernandes, M.; Schwarz, R.; Schubert, M.
Data(s)

22/03/2012

22/03/2012

2001

Resumo

A series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0 <x <1) were produced by PE-CVD at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage and capacitance-voltage characteristics. For the heterojunction cells S-shaped J-V characteristics under different illumination conditions are observed leading to poor fill factors. High serial resistances around 10(5)Ohm are also measured Simulated results confirm the experimental findings suggesting that the transport in dark depends almost exclusively on field-aided drift while under illumination it is dependent mainly on minority carriers the diffusion.

Identificador

Louro P, Vieira M, Vygranenko Y, Fernandes M. Schwarz R, Schubert M.Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction. Tranducers'01: Eurosensors XV, Digest of Technical Papers. 2001; Vols 1 and 2 : 540-543.

3-540-42150-5

http://hdl.handle.net/10400.21/1337

Idioma(s)

eng

Publicador

Obermeier E.

Direitos

restrictedAccess

Palavras-Chave #Heterostructures #Optoelectronic properties #Numerical simulation
Tipo

article