Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction
Data(s) |
22/03/2012
22/03/2012
2001
|
---|---|
Resumo |
A series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0 <x <1) were produced by PE-CVD at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage and capacitance-voltage characteristics. For the heterojunction cells S-shaped J-V characteristics under different illumination conditions are observed leading to poor fill factors. High serial resistances around 10(5)Ohm are also measured Simulated results confirm the experimental findings suggesting that the transport in dark depends almost exclusively on field-aided drift while under illumination it is dependent mainly on minority carriers the diffusion. |
Identificador |
Louro P, Vieira M, Vygranenko Y, Fernandes M. Schwarz R, Schubert M.Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction. Tranducers'01: Eurosensors XV, Digest of Technical Papers. 2001; Vols 1 and 2 : 540-543. 3-540-42150-5 |
Idioma(s) |
eng |
Publicador |
Obermeier E. |
Direitos |
restrictedAccess |
Palavras-Chave | #Heterostructures #Optoelectronic properties #Numerical simulation |
Tipo |
article |