The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.

Contactless measurement of colossal magnetoresistance in La1-xSrxMnO3 using the infrared magnetorefractive effect

The magnetorefractive effect (MRE) has been used for the first time to study the magnetotransport properties of La1-xSrxMnO3 perovskite materials. A direct correlation between the MRE and colossal magnetoresistance was observed. Samples with x = 0-0.3 prepared using the homogeneous coprecipitation and the solid state reaction methods were studied, covering the range of insulating to metallic behaviour. The M RE probed both the magnetically induced modification of the scattering of Drude-like electrons and the magnetic dependence of a stretching vibration mode. (C) 2004 Elsevier B.V. All rights reserved.

a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer

a-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.

Nucleation and growth of mullite whiskers from lanthanum-doped aluminosilicate melts

Nucleation and growth of mullite whiskers in the La2O3-Al2O3-SiO2 system were investigated in the 1500degrees-1700degreesC temperature range. A differential thermal analysis (DTA) showed that the mullitization temperature decreases from 1350degreesC to 1240degreesC as a result of lanthania doping. In the temperature range of 1250-1500degreesC, most of the mullite grains have an Al2O3/SiO2 = 1.5 composition throughout the ceramic body; however, from 1400degreesC upward, the number of anisotropic grains with the Al2O3/SiO2 = 1.3 composition begins to increase. The concentration of alumina in the composition of the grain-boundary phase decreases as firing temperatures increase. At temperatures > 1500degreesC, alumina grains and whiskers grow on the internal and external surfaces of the ceramic body with the characteristic Al2O3/SiO2 = 1.3 composition. Removal of the mullite whisker layer by acid attack revealed an alumina-rich, rosace-like patterned microstructure correlated with the process of whisker nucleation and growth. In the early stages, whisker growth rates were found to be near 60 mum/h. Experimental evidence pointed to nucleation inside the thin glass layer on the external surface.

Characterization of dense lead lanthanum titanate ceramics prepared from powders synthesized by the oxidant peroxo method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Crystal structure refinement of Co-doped lanthanum chromites

Results of crystal structure refinements and phase quantification for samples of Co-doped lanthanum chromites with nominal composition LaCr(1-x)Co(x)O(3), for x=0.00, 0.10, 0.20, and 0.30, prepared by combustion synthesis are presented. The resulting powders were characterized by scanning electron microscopy and X-ray diffraction (XRD). The XRD patterns were obtained with Cu K alpha radiation for non-doped lanthanum chromite sample and additionally with Cr K alpha radiation for Co-doped lanthanum chromites samples, in order to enhance the signal from scattering. Rietveld analysis of XRD data showed that the studied samples presented the lanthanum chromite with an orthorhombic structure (Pnma), except for the composition with x=0.30, in which the space group was found to be R (3) over barc. (C) 2008 International Centre for Diffraction Data.

Retention characteristics of lanthanum-doped bismuth titanate films annealed at different furnaces

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Lanthanum-based perovskites obtained by the polymeric precursor method

Cobalt oxides, specially the ones with perovskite structure, are of a high technological interest, due to their interesting optical, electrical and magnetic properties. La(1 -x)Ca(x)CoO(3) powder samples were synthesized by the polymeric precursor method, with x varying from 0 to 0.4. The powder precursors were characterized by TG/DTA, XRD and IR. The TG curves showed several thermal decomposition steps; the first one is ascribed to the loss of water and the remaining steps are related to the combustion of the organic matter. The XRD patterns indicated only the presence of the perovskite phase. Moreover, the structure changes from rhombohedral to cubic, as calcium is added to the perovskite and the calcination temperature increases.

Dielectric properties of pure and lanthanum modified bismuth titanate thin films

We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.

Piezoelectric behavior of SrRuO(3) buffered lanthanum modified bismuth ferrite thin films grown by chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Studies on double selenates. I. Thermal decomposition of lanthanum and alkali metal double selenates

Thermogravimetry, differential thermal analysis and other methods of analysis have been used to study the decomposition of hydrated lanthanum and alkali metal double selenates up to 1300°C. The results showed slight variations in the initial temperature of the various intermediate decomposition stages of the double selenates, as compared with the initial temperature of the corresponding decomposition of the simple selenates. The results also permitted the suggestion of mechanisms of thermal decomposition of these compounds. © 1980.

Lithium-lanthanum double chromates

Synthesis and crystallographic data are reported for low and high temperature forms of LiLa(CrO4)2. The compounds are closely related to lamellar rare earth phosphates and arsenates of sodium and to RbLu(CrO4)2. Lattice parameters of the orthorhombic (low temperature) and monoclinic (high temperature) forms are given. The low temperature form is moisture sensitive and Li+ ions are easily displaced by protons. Thermal decomposition takes place at 250 °C and results in the formation of LiCrO2, LaCrO4, LaCrO3 and Cr2O3. © 1993.

Lanthanum-lithium-sodium double chromates as ionic conductors

Lanthanum-lithium-sodium double chromates Li1-xNaxLa(CrO4)2 were prepared and analysed by means of admittance spectroscopy. Their a.c. conductivity parameters are correlated with structural details of high and low temperature forms of pure lanthanum-lithium double chromates. Lithium compounds show the lowest conductivity values and the highest activation energy for ion motion, while the sample Li0.5Na0.5La(CrO4)2 exhibits the highest conductivity 10-5 S cm-1 and the lowest activation energy 0.58 eV.