Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates prepared by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Desenvolvimento de componentes nanométricos para aplicação em células a combustível à base de sólidos estruturados e filmes finos

The present work aims the preparation of filmes of strontium-doped lanthanum manganite (perovskita) yttria-stabilized zirconia (LSM-SDC) films deposited on substrate of YSZ by means of spin coating technique having as principal objective their application to solid oxide fuel cells of intermediate temperature. La0,8Sr0,2MnO3 and Ce0,8Sm0,2O1,9 were obtained by modified Pechini method by use of gelatin which act as polymerization agent. The powders obtained were characterized by Xray fluorescence, X ray diffraction, electronic scanning microscopy and the superficial area by BET method. The results obtained by X-ray fluorescence showed that the route adopted for obtention of powders was effective in the obtention of the compositions with close values to the stoichiometrics. Ethyl cellulose was used as pore-forming agent and mixed with the LSM-SDC powders in weight proportions of 1:24, 2:23 and 1:9. The films were sintered at 1150 °C for 4 h and characterized by X-ray diffraction and scanning electron microscopy technique (SEM) and atomic force. The phases quantification of the precursory powders and of the obtained films was carried through Rietveld method. According with the analysis of SEM, as the content of ethyl cellulose was increased, the pore distribution in films become more uniform and the pore size reduced. The methodology used for the obtention of the films was very efficient, considering a material was obtained with characteristics that were proper to the application as electrolyte/cathode system to solid oxide fuel cells

Caracterização estrutural de Perovskitas Lax-1AxCoO3 (x=0 e 0,2) ,dopadas com cálcio e bario, por espectroscopia de absorção de raios X (XAS).

In this work, the structures of LaCoO3, La0,8Ba0,2CoO3 and La0,8Ca0,2CoO3 perovskites were characterized as a function of temperature (LaCoO3 structure being analyzed only at room temperature). The characterization of these materials were made by X-Ray Absorption Spectroscopy (XAS), in the cobalt K-edge, taking into account the correlated Einstein model X-ray absorption fine structure (EXAFS). The first part of the absorption spectrum corresponded the X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). These materials were prepared by the combustion method. The combustion products were calcinated at 900 0C, for 6 hours in air. Noted that the sample LaCoO3 at room temperature and samples doped with Calcium and Barium in the temperature range of 50 K to 298 K showed greater distortion to monoclinic symmetry with space group I2/a. However, the sample doped with barium at the temperatures 50 K, 220 K, and 260 K showed a slight distortion to rhombohedral symmetry with space group R-3c. The La0,8Ca0, 2CoO3 structure was few sensitive to temperature variation, showing a higher local distortion in the octahedron and a higher local thermal disorder. These interpretations were in agreement with the information electronic structural on the XANES region and geometric in the EXAFS region

Metal-insulator transitions and magnetic ordered states in oxygen-depleted manganites

The use of AC/DC magnetic susceptibility and impedance measurements to detect oxygen depletion effects in La0.7Ca0.3MnO3 +/-delta and NiMn2O4+delta spinel-type compounds is reported. For the NiMn2O4, for which no Mn4+ was found, three superposed Debye relaxations were observed in the range 260-180 K. Otherwise, in La0.7Ca0.3MnO3, the argon annealed has contributed to a decrease in T-C, but the amount of Mn4+ is still too high to allow the observation of a relaxation in this frequency window. (c) 2006 Elsevier B.V. All rights reserved.

In situ solid state oxidation reaction for La1-xSrxMnO3 (x=0, 0.1, 0.2 and 0.3) formation

In situ solid state oxidation reaction for an alternative La1-xSrxMnO3 (x = 0, 0.1, 0.2 and 0.3) formation is reported. Samples have been obtained by using strontium peroxide, lanthanum and manganese (III) oxide reagents. Strontium peroxide has induced the oxidation of Mn+3 to Mn+4. Lanthanum strontium-doped manganite was obtained without secondary phase formation. La0.825Sr0.175MnO3 showed two structural transitions. The first from 88 to 373 K and the second at 1073 K. which are explained by Jahn-Teller effect at low temperature and cation displacement at high temperature. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Fatigue-free behavior of Bi3.25La0.75Ti3O12 thin films grown on several bottom eletrodes by the polymeric precursor method

Fatigue-free Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3,RuO2, and La0.5Sr0.5CoO3 bottom electrodes in a microwave furnace at 700 degreesC for 10 min. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 muC/cm(2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. The BLT capacitors did not show any significant fatigue up to 10(10) read/write switching cycles. (C) 2004 American Institute of Physics.

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization (2P(r)) of 47.6 mu C/cm(2) and (2E(c)) of 55 kV/cm, fatigue-free characteristics up to 10(10) switching cycles, and a current density of 0.7 mu A/cm(2) at 10 kV/cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb0.90Ca0.10TiO3 (PCT10) thin films deposited using La0.50Sr0.50CoO3 (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO6 octahedron unit due to the reduction of lattice parameters. Remnant polarization (P r ) values are about 30 μC/cm2 and 12 μC/cm2 for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films. © 2013 Elsevier Ltd and Techna Group S.r.l.

Análise do 'LA''CR'O IND.3' dopado com 'SR' e 'CO',preparados via reação de combustão, utilizando difração de raios X com aplicação do método de Rietveld

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização eletroquímica de material catódico do tipo La2/3-xLi3xTiO3 para aplicações em baterias de Lítio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.

Celle ad Ossidi Solidi per Elettrolisi ad Alta Temperatura

Lo scopo di questa tesi è stato la produzione di un elettrolizzatore ad ossidi solidi (SOEC) mediante tecniche economiche e facilmente industrializzabili. Fondamentale a questo scopo è stata la realizzazione di una semicella costituita da un anodo poroso a base di La0.8Sr0.2MnO3-Ce0.8Gd0.2O2-δ (LSM-GDC) ed un elettrolita denso a base di Ce0.8Gd0.2O2-δ (GDC). Le tecniche utilizzate per la produzione di questo sistema sono state il colaggio su nastro e la serigrafia. Anche se generalmente, le celle SOEC vengono prodotte catodo supportate, in questo studio, l’elemento supportante scelto è stato l’anodo poiché questo garantisce una migliore stabilità meccanica all’intera cella. Tale substrato è stato ottenuto mediante colaggio su nastro accoppiato con un metodo innovativo di sinterizzazione denominato sinterizzazione reattiva, processo che prevede la formazione della fase di interesse durante un unico trattamento termico di eliminazione degli additivi organici e consolidamento del manufatto finale. La membrana elettrolitica per l’ottenimento del bilayer anodo-elettrolita, è stata prodotta mediante sia serigrafia che colaggio su nastro. L’accurato studio dell’evoluzione di fase della polvere anodica, l’ottimizzazione della sospensione per colaggio su nastro e dei trattamenti termici hanno permesso l’ottenimento di anodi (fino a dimensioni di 10x10 cm2). Lo studio dei profili di sinterizzazione delle polveri anodica ed elettrolitica e dell’influenza della tecnica di formatura sulla sinterabilità dei layer elettrolitici prodotti hanno inoltre permesso l’ottenimento di una semicella planare costituita da un elettrodo poroso ed una membrana elettrolitica densa adatte per applicazioni SOEC.

Laserablation von oxidischen Multilagenstrukturen zur Untersuchung von heteroepitaktischen Grenzflächenzuständen

Die Deposition von dünnen, metallischen Schichten auf Silizium-Substraten stellt bereits seit Jahrzehnten die wichtigste Möglichkeit dar, um die wachsenden Anforderungen der Speichertechnologien zu erfüllen. Obwohl Multilagenstrukturen aus oxidischen Schichten eine nahezu unerschöpfliche Vielfalt an neuen Effekten bieten, kommen diese aktuell nur in Nischenanwendungen zum Einsatz. Der Fokus dieser Arbeit liegt auf dem Verständnis von Phänomenen, die nur an Grenzflächensystemen zu beobachten sind. Die Basis der Untersuchungen stellten die Präparation der Multilagenstrukturen durch Laserablation dar. Eine Untersuchung der strukturellen Eigenschaften von multiferroischen BiFeO3 (BFO)-Schichten erlaubte eine Analyse der Wachstumsmodi und der Symmetrie der Einheitszelle von BFO unter heteroepitaktischer Verspannung. Durch Piezokraftmikroskopie konnte die ferroelektrische Domänenstruktur dünner BFO-Schichten analysiert werden. Die Abbildung der magnetischen Domänenstruktur der ferromagnetischen La0,67Sr0,33MnO3 (LSMO)-Schicht und der antiferromagnetischen BFO-Schicht einer Bilagenstruktur durch Photoemissionselektronenmikroskopie erlaubte eine Analyse der Austauschkopplung an der Grenzfläche. Durch elektronische Rekonstruktion entsteht an der LaAlO3 (LAO) /SrTiO3 (STO)-Grenzfläche ein leitfähiger, quasi-zweidimensionaler Zustand. Dessen Transporteigenschaften wurden mit einem Schwerpunkt auf deren Beeinflussung durch ein elektrisches Feld charakterisiert. Diese Ergebnisse führten zur Implementierung einer ferroelektrischen BFO-Schicht zur Manipulation der Leitfähigkeit an der LAO/STO-Grenzfläche. Die Kontrolle des Widerstandes eines mikrostrukturierten Bereichs durch die Polarisation der BFO-Schicht erlaubt die Nutzung der Struktur als Speichertechnologie.

Field-free control of magnetism in nanostructured materials probed with high resolution X-ray microscopy

Magnetic memories are a backbone of today's digital data storage technology, where the digital information is stored as the magnetic configuration of nanostructured ferromagnetic bits. Currently, the writing of the digital information on the magnetic memory is carried out with the help of magnetic fields. This approach, while viable, is not optimal due to its intrinsically high energy consumption and relatively poor scalability. For this reason, the research for different mechanisms that can be used to manipulate the magnetic configuration of a material is of interest. In this thesis, the control of the magnetization of different nanostructured materials with field-free mechanisms is investigated. The magnetic configuration of these nanostructured materials was imaged directly with high resolution x-ray magnetic microscopy. rnFirst of all, the control of the magnetic configuration of nanostructured ferromagnetic Heusler compounds by fabricating nanostructures with different geometries was analyzed. Here, it was observed that the magnetic configuration of the nanostructured elements is given by the competition of magneto-crystalline and shape anisotropy. By fabricating elements with different geometries, we could alter the point where these two effects equilibrate, allowing for the possibility to tailor the magnetic configuration of these nanostructured elements to the required necessities.rnThen, the control of the magnetic configuration of Ni nanostructures fabricated on top of a piezoelectric material with the magneto-elastic effect (i.e. by applying a piezoelectric strain to the Ni nanostructures) was investigated. Here, the magneto-elastic coupling effect gives rise to an additional anisotropy contribution, proportional to the strain applied to the magnetic material. For this system, a reproducible and reversible control of the magnetic configuration of the nanostructured Ni elements with the application of an electric field across the piezoelectric material was achieved.rnFinally, the control of the magnetic configuration of La0.7Sr0.3MnO3 (LSMO) nanostructures with spin-polarized currents was studied. Here, the spin-transfer torque effect was employed to achieve the displacement of magnetic domain walls in the LSMO nanostructures. A high spin-transfer torque efficiency was observed for LSMO at low temperatures, and a Joule-heating induced hopping of the magnetic domain walls was observed at room temperatures, allowing for the analysis of the energetics of the domain walls in LSMO.rnThe results presented in this thesis give thus an overview on the different field-free approaches that can be used to manipulate and tailor the magnetization configuration of a nanostructured material to the various technological requirements, opening up novel interesting possibilities for these materials.

Studio mediante magnetometro moke di film sottili di manganite per applicazioni in spintronica.

In questo lavoro di tesi è stata studiata l'anisotropia magnetica di film sottili epitassiali di La0.7Sr0.3MnO3 (LSMO), cresciuti con la tecnica Channel Spark Ablation su substrati monocristallini di SrTiO3 (001). L'interesse nei confronti di questi materiali nasce dal fatto che, grazie alla loro proprietà di half-metallicity, sono usati come iniettori di spin in dispositivi per applicazioni in spintronica, l'elettronica che considera elemento attivo per l'informazione non solo la carica elettrica ma anche lo spin dei portatori. Un tipico esempio di dispositivo spintronico è la valvola di spin (un dispositivo costituito da due film ferromagnetici metallici separati da uno strato conduttore o isolante) il cui stato resistivo dipende dall'orientazione relativa dei vettori magnetizzazione (parallela o antiparallela) degli strati ferromagnetici. E’ quindi di fondamentale importanza conoscere i meccanismi di magnetizzazione dei film che fungono da iniettori di spin. Questa indagine è stata effettuata misurando cicli di isteresi magnetica grazie ad un magnetometro MOKE (magneto-optical Kerr effect). Le misure di campo coercitivo e della magnetizzazione di rimanenza al variare dell'orientazione del campo rispetto al campione, permettono di identificare l'anisotropia, cioè gli assi di facile e difficile magnetizzazione. I risultati delle misure indicano una diversa anisotropia in funzione dello spessore del film: anisotropia biassiale (cioè con due assi facili di magnetizzazione) per film spessi 40 nm e uniassiale (un asse facile) per film spessi 20 nm. L'anisotropia biassiale viene associata allo strain che il substrato cristallino induce nel piano del film, mentre l'origine dell'uniassialità trova la giustificazione più probabile nella morfologia del substrato, in particolare nella presenza di terrazzamenti che potrebbero indurre una step-induced anisotropy. Il contributo di questi fattori di anisotropia alla magnetizzazione è stato studiato anche in temperatura.