Free-to-bound and bound exciton transitions at isoelectronic impurities: GaP(Zn,O)

We show, for sufficiently high temperatures and sufficiently weak majority-carrier binding energies, that the dominant radiative transition at an isoelectronic acceptor (donor) in p-type (n-type) material consists of the recombination of singly trapped minority carriers (bound by central-cell forces) with free majority carriers attracted by a Coulomb interaction. There are two reasons why the radiative recombination rate of the free-to-bound process is greater than the bound exciton process, which dominates at lower temperatures: (i) The population of free majority-carrier states greatly exceeds that of exciton states at higher temperatures, and (ii) the oscillator strength of the free-to-bound transition is greatly enhanced by the Coulomb attraction between the free carrier and the charged isoelectronic impurity. This enhancement is important for isoelectronic centers and is easily calculable from existing exciton models. We show that the free carrier attracted by a Coulomb interaction can be viewed as a continuum excited state of the bound exciton. When we apply the results of our calculations to the GaP(Zn, O) system, we find that the major part of the room-temperature luminescence from nearest-neighbor isoelectronic Zn-O complexes results from free-to-bound recombination and not exciton recombination as has been thought previously. Recent experiments on impulse excitation of luminescence in GaP(Zn, O) are reevaluated in the light of our calculations and are shown to be consistent with a strong free-to-bound transition. For deep isoelectronic centers with weakly bound majority carriers, we predict an overwhelming dominance of the free-to-bound process at 300°K.

Low-temperature deformation behaviour of polycrystalline copper

Low-temperature plastic flow in copper was investigated by studying its tensile and creep deformation characteristics. The dependence of the flow stress on temperature and strain rate was used to evaluate the thermal activation energy while the activation area was derived from the change-in-stress creep experiments. A value of 0.6 eV was obtained for the total obstacle energy both in electrolytic and commerical copper. The activation areas in copper of three selected purities fell in the range 1200 to 100 b2. A forest intersection mechanism seems to control the temperature dependent part of the flow stress. The increase in the athermal component of the flow stress with impurity content in copper is attributed to a change in the dislocation density. The investigation also revealed that thermal activation of some attractive junctions also takes place during low-temperature creep. The model of attractive junction formation on a stress decrement during creep, yields a value of 45±10 ergs cm-2 for the stacking fault energy in copper.

Dislocation dynamics in alpha titanium Dynamique des dislocations dans le titane alphaVersetzungsdynamik in alpha-Titan

The activation area and activation enthalpy are determined as a function of stress and temperature for alpha titanium. The results indicated that plastic flow below about 700°K occurs by a single thermally activated mechanism. Activation area determined by differential-stress creep tests falls in the range 80−8b2 and does not systematically depend on the impurity content. The total activation enthalpy derived from the temperature and strain-rate dependence of flow stress is 1.15 eV. The experimental data support a lattice hardening mechanism as controlling the low-temperature deformation in alpha titanium.

A Geometric Algorithm for Learning Oblique Decision Trees

In this paper we present a novel algorithm for learning oblique decision trees. Most of the current decision tree algorithms rely on impurity measures to assess goodness of hyperplanes at each node. These impurity measures do not properly capture the geometric structures in the data. Motivated by this, our algorithm uses a strategy, based on some recent variants of SVM, to assess the hyperplanes in such a way that the geometric structure in the data is taken into account. We show through empirical studies that our method is effective.

Critical behavior of the aqueous electrolytic system 3-methylpyridine+D2O+NaBr

The system 3-methylpyridine(3MP)+water(H2O)+NaBr has been the subject of an intense scientific debate since the work of Jacob [Phys. Rev. E. 58, 2188 (1988)] and Anisimov [Phys. Rev. Lett. 85, 2336 (2000)]. The crossover critical behavior of this system seemed to show remarkable sensitivity to the weight fraction (X) of the ionic impurity NaBr. In the range X <= 0.10 the system displayed Ising behavior and a pronounced crossover to mean-field behavior in the range 0.10 <= X <= 0.16. A complete mean-field behavior was observed at X=0.17, a result that was later attributed to the existence of long-living nonequilibrium states in this system [Kostko , Phys. Rev. E. 70, 026118 (2004)]. In this paper, we report the near-critical behavior of osmotic susceptibility in the isotopically related ternary system, 3MP+heavy water(D2O)+NaBr. Detailed light-scattering experiments performed at exactly the same NaBr concentrations as investigated by Jacob reveal that the system 3MP+D2O+NaBr shows a simple Ising-type critical behavior with gamma similar or equal to 1.24 and nu similar or equal to 0.63 over the entire NaBr concentration range 0 <= X <= 0.1900. The crossover behavior is predominantly nonmonotonic and is completed well outside the critical domain. An analysis in terms of the effective susceptibility exponent (gamma(eff)) reveals that the crossover behavior is nonmonotonic for 0 <= X <= 0.1793 and tends to become monotonic for X > 0.1793. The correlation length amplitude xi(o), has a value of similar or equal to 2 A for 0.0250 <= X <= 0.1900, whereas for X=0, xi(o)similar or equal to 3.179 A. Since isotopic H -> D substitution is not expected to change the critical behavior of the system, our results support the recent results obtained by Kostko [Phys. Rev. E. 70, 026118 (2004)] that 3MP+H2O+NaBr exhibits universal Ising-type critical behavior typical for other aqueous solutions.

Interdiffusion Studies in the Co- Mo System

Study of interdiffusion in the Co-Mo system is important to understand the performance of turbine blades in jet engine applications. Mo is added to superalloys to increase the solid solution strengthening and the creep resistance. In this study, the interdiffusion coefficient in the Co(Mo) solid solution and impurity diffusion coefficient of Mo in Co are determined. Further, the activation energy and pre-exponential factors are calculated, which provide an idea about the atomic mechanism of diffusion.

Spatially dependent correlation functions in the Anderson model

We report results from a first principles calculation of spatially dependent correlation functions around a magnetic impurity in metals described by the nondegenerate Anderson model. Our computations are based on a combination of perturbative scaling theory and numerical renormalization group methods. Results for the conduction election charge density around the impurity and correlation functions involving the conduction electron and impurity charge and spin densities will be presented. The behavior in various regimes including the mixed valent regime will be explored.

Critical behavior of electrical resistivity in polar + nonpolar binary liquid systems

The behavior of electrical resistivity in the critical region of three polar + nonpolar binary liquid systems CS2 +(CH3CO)2O, C6H12+(CH3CO)2O, and n‐C7H16+(CH3CO)2O is studied. For the mixtures with critical composition, the two phase region shows a conductivity behavior with σ1−σ2∼ (−ϵ)β with β?0.35. In the one phase region dR/dT has a singularity ϵ−b with b?0.35. A possible theory of the impurity conduction is given, which broadly explains these results. The possibility of dR/dT being positive or negative is also discussed.

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

The contribution of polarons, bipolarons and intersite tunneling to low temperature conductivity in doped polypyrrole

The conductivity of highly doped polypyrrole is less than that of intermediately doped samples, by two orders of magnitude, at 4.2 K. This may be due to more number of bipolarons in highly doped samples. Bipolarons require four times more activation energy than single polarons to hop by thermally induced virtual transitions to intermediate dissociated polaron states than by the nondissociated process. The conduction process in these polyconjugated systems involve ionization from deep trapped states, having a View the MathML source dependence, hopping from localised states, having View the MathML source dependence, and intersite tunnel percolation, having T−1 dependence. The interplay of these factors leads to a better fit by View the MathML source. The mechanism for this exponential behaviour need not be same as that of Motts variable range hopping. Conduction by percolation is possible, if an infinite cluster of chains can be connected by impurity centers created by dopant ions. The tendency for the saturation of conductivity at very low temperatures is due to the possibility of intersite tunnel percolation is disordered polaronic systems.

Thermodynamics of Phosphorus and Sulphur Removal during Basic Oxygen Steelmaking

Removal of impurity elements from hot metal is essential in basic oxygen steelmaking. Oxidation of phosphorus from hot metal has been studied by several authors since the early days of steelmaking. Influence of different parameters on the distribution of phosphorus, seen during the recent work of the authors, differs somewhat from that reported earlier. On the other hand, removal of sulphur during steelmaking has drawn much less attention. This may be due to the magnitude of desulphurisation in oxygen steelmaking being relatively low and desulphurisation during hot metal pre-treatment or in the ladle furnace offering better commercial viability Further, it is normally accepted that sulphur is removed to steelmaking slag in the form of sulphide only However, recent investigations have indicated that a significant amount of sulphur removed during basic oxygen steelmaking can exist in the form of sulphate in the slag under oxidising conditions. The distribution of sulphur during steelmaking becomes more important in the event of carry-over of sulphur-rich blast-furnace slag, which increases sulphur load in the BOF. The chemical nature of sulphur in this slag undergoes a gradual transition from sulphide to sulphate as the oxidative refining progresses.

The influence of dislocations on the nonlinearity of ZnO:Cu varistors

Zinc Oxide doped only with Cu shows highly nonlinear I–V characteristics. Microstructural observations of these ceramics reveal the presence of extensive dislocation network. The transmission electron microscopy (TEM) indicates that the dislocations are impurity decorated which arise as a result of limited solubility of CuO in ZnO. It is envisaged that the depletion region is generated in the region containing the dislocations because of the presence of acceptor type traps.

Electronic states in a disordered metal: Magnetotransport in doped germanium

We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

Origin of the insulating state in NaCuO2

We study the electronic structure of NaCuO2 by analysing experimental core level photoemission and X-ray absorption spectra using a cluster as well as an Anderson impurity Hamiltonian including the band structure of the oxygen sublattice. We show that the X-ray absorption results unambiguously establish a negative value of the charge transfer energy, A. Further, mean-field calculations for the edge-shared one-dimensional CuO2 lattice of NaCuO2 within the multiband Hubbard Hamiltonian show that the origin of the insulating nature lies in the band structure rather than in the correlation effects. LMTO-ASA band structure calculations suggest that NaCuO2 is an insulator with a gap of around 1 eV.

An aqueous-solution based low-temperature pathway to synthesize giant dielectric CaCu3Ti4O12-Highly porous ceramic matrix and submicron sized powder

A simple, cost-effective and environment-friendly pathway for preparing highly porous matrix of giant dielectric material CaCu3Ti4O12 (CCTO) through combustion of a completely aqueous precursor solution is presented. The pathway yields phase-pure and impurity-less CCTO ceramic at an ultra-low temperature (700 degrees C) and is better than traditional solid-state reaction schemes which fail to produce pure phase at as high temperature as 1000 degrees C (Li, Schwartz, Phys. Rev. B 75, 012104). The porous ceramic matrix on grinding produced CCTO powder having particle size in submicron order with an average size 300 nm. On sintering at 1050 degrees C for 5 h the powder shows high dielectric constants (>10(4) at all frequencies from 100 Hz to 100 kHz) and low loss (with 0.05 as the lowest value) which is suitable for device applications. The reaction pathway is expected to be extended to prepare other multifunctional complex perovskite materials. (C) 2010 Elsevier B.V. All rights reserved.