Coordination on Lie groups

This paper studies the coordinated motion of a group of agents evolving on a Lie group. Left-or rightinvariance with respect to the absolute position on the group lead to two different characterizations of relative positions and two associated definitions of coordination (fixed relative positions). Conditions for each type of coordination are derived in the associated Lie algebra. This allows to formulate the coordination problem on Lie groups as consensus in a vector space. Total coordination occurs when both types of coordination hold simultaneously. The discussion in this paper provides a common geometric framework for previously published coordination control laws on SO(3), SE(2) and SE(3). The theory is illustrated on the group of planar rigid motion SE(2). © 2008 IEEE.

Use of axially graded burnable boron for hot-spot temperature reduction in a pressurized water reactor core

Shortly after the loading of a pressurized water reactor (PWR) core, the axial power distribution in fresh fuel has already attained the characteristic, almost flat shape, typical of burned fuel. At beginning of cycle (BOC), however, the axial distribution is centrally peaked. In assemblies hosting uniform burnable boron rods, this BOC peaking is even more pronounced. A reduction in the axial peaking is today often achieved by shortening the burnable boron rods by some 30 cm at each edge. It is shown that a two-zone grading of the boron rod leads, in a representative PWR cycle, to a reduction of the hot-spot temperature of approximately 70 °C, compared with the nongraded case. However, with a proper three-zone grading of the boron rod, an additional 20 °C may be cut off the hot-spot temperature. Further, with a slightly skewed application of this three-zone grading, an additional 50 °C may be cut off. The representative PWR cycle studied was cycle 11 of the Indian Point 2 station, with a simplification in the number of fuel types and in the burnup distribution. The analysis was based on a complete three-dimensional burnup calculation. The code system was ELCOS, with BOXER as an assembly code for the generation of burnup-dependent cross sections and SILWER as a three-dimensional core code with thermal-hydraulic feedback.

Optical vortex based Mode Division Multiplexing over graded-index multimode fibre

Mode Division Multiplexing is performed over 2km and 8km of 50μm graded-index multimode fibre using (de)multiplex phase masks based around optical vortex modes to transmit 2×56Gbps QPSK signals without MIMO equalization. © 2013 OSA.

Optical vortex based mode division multiplexing over graded-index multimode fibre

Mode Division Multiplexing is performed over 2km and 8km of 50μm graded-index multimode fibre using (de)multiplex phase masks based around optical vortex modes to transmit 2x56Gbps QPSK signals without MIMO equalization. © 2013 OSA.

Subwavelength plasmonics for graded-index optics on a chip.

Planar plasmonic devices are becoming attractive for myriad applications, owing to their potential compatibility with standard microelectronics technology and the capability for densely integrating a large variety of plasmonic devices on a chip. Mitigating the challenges of using plasmonics in on-chip configurations requires precise control over the properties of plasmonic modes, in particular their shape and size. Here we achieve this goal by demonstrating a planar plasmonic graded-index lens focusing surface plasmons propagating along the device. The plasmonic mode is manipulated by carving subwavelength features into a dielectric layer positioned on top of a uniform metal film, allowing the local effective index of the plasmonic mode to be controlled using a single binary lithographic step. Focusing and divergence of surface plasmons is demonstrated experimentally. The demonstrated approach can be used for manipulating the propagation of surface plasmons, e.g., for beam steering, splitting, cloaking, mode matching, and beam shaping applications.

Plasmonic graded-index planar lens based on subwavelength features in the effective index regime

We experimentally demonstrate the planar focusing of Surface Plasmon Polaritons using space variant PMMA subwavelength features on top of a metallic film. Focusing is obtained by creating an effective graded refractive index profile. © 2012 OSA.

Optimal data fitting on lie groups: A coset approach

This work considers the problem of fitting data on a Lie group by a coset of a compact subgroup. This problem can be seen as an extension of the problem of fitting affine subspaces in n to data which can be solved using principal component analysis. We show how the fitting problem can be reduced for biinvariant distances to a generalized mean calculation on an homogeneous space. For biinvariant Riemannian distances we provide an algorithm based on the Karcher mean gradient algorithm. We illustrate our approach by some examples on SO(n). © 2010 Springer -Verlag Berlin Heidelberg.

Plasmonic graded-index planar lens based on subwavelength features in the effective index regime

We experimentally demonstrate the planar focusing of Surface Plasmon Polaritons using space variant PMMA subwavelength features on top of a metallic film. Focusing is obtained by creating an effective graded refractive index profile. © OSA 2012.

Novel passive launch scheme for ultimate bandwidth improvement of graded-index multimode fibers

We propose a new practical multimode fiber optical launch scheme, providing near single mode group excitation for >5 times transmission bandwidth improvement. Equalization-free transmission of a 10-Gb/s signal over 220-m fiber is achieved in experimental demonstrations. © 2010 Optical Society of America.

A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs

A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLID can be up to 122nm, covering the range of 1508-1630nm, and the output power is 11.5mW.

Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.

Optical characteristics of DBR with inhomogeneous graded interfaces

Optical properties of Al0.9Ga0.1As/Al gamma Ga1-gamma As/GaAs/Al chi Ga1-chi As DBR with inhomogeneous graded interfaces has been investigated by using characteristic matrix method. The refractive index model and the analytic characteristic matrix of graded interfaces are obtained. The reflectance spectrum and the reflective phase shift are calculated for GaAs/Al-0.9 Ga-0.1 As DBR and graded interfaces DBR by using characteristic matrix method. The effect of graded interfaces on the optical properties of DBR is discussed. The result shows an extra graded phase matching layer must he added in front of the graded interfaces DBR to fulfil the conditions of phase matching at central wavelength. The accurate thickness of phase matching layer is calculated by optical thickness approximation method.

Semiconductor optical amplifier optical gate with graded strained bulk-like active structure

A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for multiwavelength and different power input signals over the whole operation current are obtained. Moreover, for our SOA optical gate, a no-loss current of 50 to 70 mA and an extinction ratio of more than 50 dB are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 dB, which is critical for crosstalk suppression. (C) 2003 society of Photo-Optical Instrumentation Engineers.

Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

A step-graded InAlAs buffer layer and an In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor (MM-HEMT) structures were grown by molecular beam epitaxy on GaAs (001) substrates, and rapid thermal annealing was performed on them in the temperature range 500-800 degreesC for 30 s. The as-grown and annealed samples were investigated with Hall measurements, and 77 K photoluminescence. After rapid thermal annealing, the resistivities of step-graded InAlAs buffer layer structures became high. This can avoid leaky characteristics and parasitic capacitance for MM-HEMT devices. The highest sheet carrier density n(s) and mobility mu for MM-HEMT structures were achieved by annealing at 600 and 650degreesC, respectively. The relative intensities of the transitions between the second electron subband to the first heavy-hole subband and the first electron subband to the first heavy-hole subband in the MM-HEMT InGaAs well layer were compared under different annealing temperatures. (C) 2002 American Institute of Physics.