Semiconductor optical amplifier optical gate with graded strained bulk-like active structure
Data(s) |
2003
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Resumo |
A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for multiwavelength and different power input signals over the whole operation current are obtained. Moreover, for our SOA optical gate, a no-loss current of 50 to 70 mA and an extinction ratio of more than 50 dB are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 dB, which is critical for crosstalk suppression. (C) 2003 society of Photo-Optical Instrumentation Engineers. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang RY; Dong J; Feng ZW; Zhou F; Tian HL; Shu HY; Zhao LJ; Bian J; Wang W .Semiconductor optical amplifier optical gate with graded strained bulk-like active structure ,OPTICAL ENGINEERING,2003,42 (3):798-802 |
Palavras-Chave | #光电子学 #graded strained bulk-like active structure #semiconductor optical amplifier #optical gate #SPOT-SIZE CONVERTER #WDM APPLICATIONS #GAIN |
Tipo |
期刊论文 |