Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures

Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers. It was found that In-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2DEG) in the heterostructures. Furthermore, In-doping also improved mobility in heterostructures with Si modulation-doped in AlGaN layers. The possible reasons were discussed. X-ray diffraction (XRD) and wet chemical etching revealed that crystalline quality of GaN was improved by In-doping. It was proposed that In-doping modified growth kinetics of GaN.

High-quality GaN grown by gas-source MBE

High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.

Characteristics of plasma induced by interaction of a free-oscillated laser pulse with a coal target in air and combustible gas

Plasma in the air is successfully induced by a free-oscillated Nd:YAG laser pulse with a peak power of 10(2-3) W. The initial free electrons for the cascade breakdown process are from the ablated particles from the surface of a heated coal target, likewise induced by the focused laser beam. The laser field compensates the energy loss of the plasma when the corresponding temperature and the images are investigated by fitting the experimental spectra of B-2 Sigma(+) -> X-2 Sigma(+) band of CN radicals in the plasma with the simulated spectra and a 4-frame CCD camera. The electron density is estimated using a simplified Kramer formula. As this interaction occurs in a gas mixture of hydrogen and oxygen, the formation and development of the plasma are weakened or restrained due to the chaining branch reaction in which the OH radicals are accumulated and the laser energy is consumed. Moreover, this laser ignition will initiate the combustion or explosion process of combustible gas and the minimum ignition energy is measured at different initial pressures. The differences in the experimental results compared to those induced by a nanosecond Q-switched laser pulse with a peak power of 10(6-8) W are also discussed. (C) 2009 Professor T. Nejat Veziroglu. Published by Elsevier Ltd. All rights reserved.

Study of sintered stainless steel fiber felt as gas diffusion backing in air-breathing DMFC

Adoption of a sintered stainless steel fiber felt was evaluated as gas diffusion backing in air-breathing direct methanol fuel cell (DMFC). By using a sintered stainless steel fiber felt as an anodic gas diffusion backing, the peak power density of an air-breathing DMFC is 24 mW cm(-2), which is better than that of common carbon paper. A 30-h-life test indicates that the degraded performance of the air-breathing DMFC is primarily due to the water flooding of the cathode. Twelve unit cells with each has 6 cm(2) of active area are connected in series to supply the power to a mobile phone assisted by a constant voltage diode. The maximum power density of 26 mW cm(-2) was achieved in the stack, which is higher than that in single cell. The results show that the sintered stainless steel felt is a promising solution to gas diffusion backing in the air-breathing DMFC, especially in the anodic side because of its high electronical conductivity and hydrophilicity. (C) 2004 Elsevier B.V. All rights reserved.

Gas transport properties of a series of cardo polyarylethers

Gas transport of H-2, CO2, O-2, N-2, and CH4 in a series of cardo polyarylethers were examined over a temperature range of 30 similar to 100 degreesC. These polymers include three poly(aryletherketone)s, two poly(arylethersulfone)s, and one poly(aryletherketoneketone). It was found that the large length/diameter ratio of the polymer repeat unit for cardo polyaryletherketoneketone (PEKK-C) and strong intermolecular interaction in hydrogen-bonded polyarylethersulfone (PES-H) and hydrogen-bonded polyaryletherketone (PEK-H) resulted in a considerable increase in gas permselectivity. Alkyl-substituted polyaryletherketone (PEK-A), bearing a pendant bulky propyl group on the cardo ring, simultaneously exhibited 62.5% higher H-2 permeability and 59.8% higher H-2/N-2 permselectivity than unmodified poly(aryletherketone) (PEK-C). The causes of the trend were interpreted in terms of chain packing density, segmental motion ability, steric factor, and intermolecular interaction of polymers, together with gas kinetic diameter and critical temperature data.

Gas transport properties of novel cardo poly(aryl ether ketone)s with pendant alkyl groups

Gas transport of hydrogen, oxygen, nitrogen, carbon dioxide, and methane in four cardo poly(aryl ether ketone)s containing different alkyl substituents on the phenyl ring has been examined from 30 to 100 degrees C. The permeability, diffusivity, solubility, and their temperature dependency were studied by correlations with gas shape, size, and critical temperature as well as polymeric structural factors including glass transition, secondary transition, cohesive energy density, and free volume. The bulky, stiff cardo and alkyl groups in tetramethyl-substituted TMPEK-C resulted in increased H-2 permeability (by 55%) and H-2/N-2 permselectivity (by 106%) relative to bisphenol A polysulfone (PSF). Moreover, the weak dependence of gas transport on temperature in TMPEK-C made it maintain high permselectivities (alpha(H2/N2) in 68.3 and alpha(O2/N2) in 5.71) up to 100 degrees C, exhibiting potential for high-temperature gas separation applications.

Gas permeability in polyimides from oxydianiline and isomeric thiaphthalic dianhydride or 1,4-bis(dicarboxyphenoxy) benzene dianhydride

The gas permeability and permselectivity properties were investigated of polyimides, prepared from 3,3',4,4'- and 2,2',3,3'-thiaphthalic dianhydride (p-TDPA and m-TDPA, respectively), or 1,4-bis(3,4-dicarboxyphenoxy)- and 1,4-bis(2,3-dicarboxyphenoxy) benzene dianhydride (p-HQDPA and m-HQDPA, respectively), and 4,4-oxydianiline. The polyimides prepared from meta-dianhydrides, which have lower chain-segment packing density, possess higher permeability and lower permselectivity than those prepared from para-dianhydrides. Copyright (C) 1996 Elsevier Science Ltd.

A SIMPLE METHOD FOR PREDICTION OF GAS-PERMEABILITY OF POLYMERS FROM THEIR MOLECULAR-STRUCTURE

A method for the prediction of gas permeabilities (P) through polymers from their chemical structure has been developed on the basis of the ratio of molar free volume to molar cohesive energy, V(f)/E(coh). The permeation of small gas molecules through polymer membranes is dependent on the chain packing density measured by V(f) and segmental motion of polymer chains measured by E(coh). But no simple relationship between P and V(f) or E(coh) alone was found. The permeability data of more than 60 polymers covering 7 orders of magnitude for six gases have been treated with linear regression analysis. All plots of log P vs. V(f)/E(coh) gave good straight lines. It is also found that a linear relationship holds when plotting both the intercepts and slopes of log P vs. V(f)/E(coh) lines against square of the diameters of gas molecules. Therefore, the permeabilities of all the non-swelling gases through a great variety of polymers can be estimated using two correlations above. Moreover, this method is more accurate than others in the literature and may found useful for the selection of gas separation or barrier membrane materials.

Atomic layer deposition of copper – study through density functional theory

The wonder of the last century has been the rapid development in technology. One of the sectors that it has touched immensely is the electronic industry. There has been exponential development in the field and scientists are pushing new horizons. There is an increased dependence in technology for every individual from different strata in the society. Atomic Layer Deposition (ALD) is a unique technique for growing thin films. It is widely used in the semiconductor industry. Films as thin as few nanometers can be deposited using this technique. Although this process has been explored for a variety of oxides, sulphides and nitrides, a proper method for deposition of many metals is missing. Metals are often used in the semiconductor industry and hence are of significant importance. A deficiency in understanding the basic chemistry at the nanoscale for possible reactions has delayed the improvement in metal ALD. In this thesis, we study the intrinsic chemistry involved for Cu ALD. This work reports computational study using Density Functional Theory as implemented in TURBOMOLE program. Both the gas phase and surface reactions are studied in most of the cases. The merits and demerits of a promising transmetallation reaction have been evaluated at the beginning of the study. Further improvements in the structure of precursors and coreagent have been proposed. This has led to the proposal of metallocenes as co-reagents and Cu(I) carbene compounds as new set of precursors. A three step process for Cu ALD that generates ligand free Cu layer after every ALD pulse has also been studied. Although the chemistry has been studied under the umbrella of Cu ALD the basic principles hold true for ALD of other metals (e.g. Co, Ni, Fe ) and also for other branches of science like thin film deposition other than ALD, electrochemical reactions, etc.

Universal quantum viscosity in a unitary Fermi gas.

A Fermi gas of atoms with resonant interactions is predicted to obey universal hydrodynamics, in which the shear viscosity and other transport coefficients are universal functions of the density and temperature. At low temperatures, the viscosity has a universal quantum scale ħ n, where n is the density and ħ is Planck's constant h divided by 2π, whereas at high temperatures the natural scale is p(T)(3)/ħ(2), where p(T) is the thermal momentum. We used breathing mode damping to measure the shear viscosity at low temperature. At high temperature T, we used anisotropic expansion of the cloud to find the viscosity, which exhibits precise T(3/2) scaling. In both experiments, universal hydrodynamic equations including friction and heating were used to extract the viscosity. We estimate the ratio of the shear viscosity to the entropy density and compare it with that of a perfect fluid.