Laser diode bistability as sensor of optical signals pameters

Laser Diodes have been employed many times as light sources on different kinds of optical sensors. Their main function in these applications was the emission of an optical radiation impinging onto a certain object and, according to the characteristics of the reflected light, some information about this object was obtained. Laser diodes were acting, in a certain way, just as passive devices where their only function was to provide the adequate radiation to be later measured and analyzed. The objective of this paper is to report a new concept on the use of laser diodes taking into account their optical bistable properties. As it has been shown in several places, different laser diodes as, for example, DFB lasers and FP lasers, offer bistable characteristics being these characteristics a function of different parameters as wavelength, light polarization or temperature. Laser Bistability is strongly dependent on them and any small variation of above parameters gives rise to a strong change in the characteristics of its non-linear properties. These variations are analyzed and their application in sensing reported. The dependence on wavelength, spectral width, input power and phase variations, mainly for a Fabry-Perot Laser structure as basic configuration, is shown in this paper.

Linewidth reduction in a large-smile laser diode array

We present theory and simulations for a spectral narrowing scheme for laser diode arrays (LDAs) that employs optical feedback from a diffraction grating. We calculate the effect of the so-called smile of the LDA and show that it is possible to reduce the effect by using a cylindrical lens set at an angle to the beam. The scheme is implemented on a 19-element LDA with smile of 7.6 mu m and yields frequency narrowing from a free-running width of 2 to 0.15 nm. The experimental results are in good agreement with the theory. (c) 2005 Optical Society of America.

Distance measurement using the change in junction voltage across a laser diode due to the self-mixing effect

Conventional detection scheme for self-mixing sensors uses an integrated photodiode within the laser package to monitor the self mixing signal. This arrangement can be simplified by directly obtaining the self-mixing signals across the laser diode itself and omitting the photodiode. This work reports on a Vertical-Cavity Surface-Emitting Laser (VCSEL) based selfmixing sensor using the laser junction voltage to obtain the selfmixing signal. We show that the same information can be obtained with only minor changes to the extraction circuitry leading to potential cost saving with reductions in component costs and complexity and significant increase in bandwidth favoring high speed modulation. Experiments using both photo current and voltage detection were carried out and the results obtained show good agreement with the theory.

Theoretical study of Talbot-like bands observed using a laser diode below threshold

We report on a theoretical study of an interferometric system in which half of a collimated beam from a broadband optical source is intercepted by a glass slide, the whole beam subsequently being incident on a diffraction grating and the resulting spectrum being viewed using a linear CCD array. Using Fourier theory, we derive the expression of the intensity distribution across the CCD array. This expression is then examined for non-cavity and cavity sources for different cases determined by the direction from which the slide is inserted into the beam and the source bandwidth. The theoretical model shows that the narrower the source linewidth, the higher the deviation of the Talbot bands' visibility (as it is dependent on the path imbalance) from the previously known triangular shape. When the source is a laser diode below threshold, the structure of the CCD signal spectrum is very complex. The number of components present simultaneously increases with the number of grating lines and decreases with the laser cavity length. The model also predicts the appearance of bands in situations not usually associated with Talbot bands.

Talbot-like bands for a laser diode below threshold

We report on the problems encountered when replacing a tungsten filament lamp with a laser diode in a set-up for displaying Talbot bands using a diffraction grating. It is shown that the band pattern is rather complex and strong interference signals may exist in situations where Talbot bands are not normally expected to appear. In these situations, the period of the bands increases with the optical path difference (OPD). The visibility of bands as dependence on path imbalance is obtained by suitably obstructing halfway into the arms of a Michelson interferometer using opaque screens.

A frequency locked laser diode for interferometric sensing systems

Interferometric sensors for slowly varying measurands, such as temperature or pressure, require a long term frequency stability of the source. We describe a system for frequency locking a laser diode to an atomic transition in a hollow cathode lamp using the optogalvanic effect.

Self-seeded gain-switched operation of an InGaN MQW laser diode

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

Theoretical study of Talbot-like bands observed using a laser diode below threshold

We report on a theoretical study of an interferometric system in which half of a collimated beam from a broadband optical source is intercepted by a glass slide, the whole beam subsequently being incident on a diffraction grating and the resulting spectrum being viewed using a linear CCD array. Using Fourier theory, we derive the expression of the intensity distribution across the CCD array. This expression is then examined for non-cavity and cavity sources for different cases determined by the direction from which the slide is inserted into the beam and the source bandwidth. The theoretical model shows that the narrower the source linewidth, the higher the deviation of the Talbot bands' visibility (as it is dependent on the path imbalance) from the previously known triangular shape. When the source is a laser diode below threshold, the structure of the CCD signal spectrum is very complex. The number of components present simultaneously increases with the number of grating lines and decreases with the laser cavity length. The model also predicts the appearance of bands in situations not usually associated with Talbot bands.

Talbot-like bands for a laser diode below threshold

We report on the problems encountered when replacing a tungsten filament lamp with a laser diode in a set-up for displaying Talbot bands using a diffraction grating. It is shown that the band pattern is rather complex and strong interference signals may exist in situations where Talbot bands are not normally expected to appear. In these situations, the period of the bands increases with the optical path difference (OPD). The visibility of bands as dependence on path imbalance is obtained by suitably obstructing halfway into the arms of a Michelson interferometer using opaque screens.

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

A compact all-room-temperature frequency-doubling scheme generating cw orange light with a periodically poled potassium titanyl phosphate waveguide and a quantum-dot external cavity diode laser is demonstrated. A frequency-doubled power of up to 4.3 mW at the wavelength of 612.9 nm with a conversion efficiency exceeding 10% is reported. Second harmonic wavelength tuning between 612.9 nm and 616.3 nm by changing the temperature of the crystal is also demonstrated. © Springer-Verlag 2010.

Random distributed feedback Raman fiber laser with polarized pumping

In this letter, the polarization properties of a random fiber laser operating via Raman gain and random distributed feedback owing to Rayleigh scattering are investigated for the first time. Using polarized pump, the partially polarized generation is obtained with a generation spectrum exhibiting discrete narrow spectral features contrary to the smooth spectrum observed for the depolarized pump. The threshold, output power, degree of polarization and the state of polarization (SOP) of the lasing can be significantly influenced by the SOP of the pump. Fine narrow spectral components are also sensitive to the SOP of the pump wave. Furthermore, we found that random lasing's longitudinal power distributions are different in the case of polarized and depolarized pumping that results in considerable reduction of the generation slope efficiency for the polarized radiation. Our results indicate that polarization effects play an important role on the performance of the random fiber laser. This work improves the understanding of the physics of random lasing in fibers and makes a step forward towards the establishment of the vector model of random fiber lasers.

Study of the longitudinal distribution of power generated in a random distributed feedback Raman fibre laser with unidirectional pumping

The longitudinal distribution of the Stokes-component power in a Raman fibre laser with a random distributed feedback and unidirectional pumping is measured. The fibre parameters (linear loss and Rayleigh backscattering coefficient) are calculated based on the distributions obtained. A numerical model is developed to describe the lasing power distribution. The simulation results are in good agreement with the experimental data. © 2012 Kvantovaya Elektronika and Turpion Ltd.