Physicochemical and antioxidant properties of the pequi (Caryocar brasiliense Camb.) almond oil obtained by handmade and cold-pressed processes.

Abstract: The aim of this study is to characterize physical and chemically and determine the antioxidant capacity of pequi almond oils (PAO) extracted by handmade and by cold-pressing. Both oils showed good quality by acid, peroxide and thiobarbituric acid values. The fatty acid (FA) profile showed a significant presence of monounsaturated FA, mainly oleic acid (53.48 to 55.41%); saturated FA, such as palmitic acid (33.30 to 35.89 %); and polyunsaturated FA (PUFA), such as linoleic acid (5.85 to 7.23%). The total phenolic (TP) and carotenoid content ranged in concentration from 87.56 to 392.00 mg GAE/100 g and 36.03 to 262.40 mg/100 g, respectively. The tocopherol and phytosterol results indicated the predominant presence of α-tocopherol (52 to 67%) and stigmasterol (63 to 68 %). The antioxidant capacity of PAO as measured using the 2,2-diphenyl-1-picrylhydrazyl (DPPH?) method oscillated from 58.48 mg/mL to 76.46 mg/mL (IC50), from 10.61 to 40.46 µmol TE/g by the 2,2′-azino-bis (3-ethylbenzothiazoline-6-sulphonic acid) (ABTS?+) method, and from 113.93 to 280.85 µmol TE/100 g and 164.49 to 277.86 µmol TE/100 g, by the lipophilic and hydrophilic oxygen radical absorbance capacity (ORAC) methods, respectively. The oils presented a good oxidative and thermal stability by Rancimat method (IP of 7.33 a 15.91 h) and curves thermogravimetric and differential scanning calorimetry (To 337-363 °C and 159-184 °C, respectively). The results confirmed the presence of compounds that conferred antioxidant capacity and oxidative and thermal resistance for PAO made by handmade or cold-pressing, indicating that these oils can potentially be used for food and non-food applications.

Effects of contact resistance on thermal-conductivity of composite media with a periodic structure

The thermal conductivity of periodic composite media with spherical or cylindrical inclusions embedded in a homogeneous matrix is discussed. Using Green functions, we show that the Rayleigh identity can be generalized to deal with thermal properties ot these systems. A new calculating method for effective conductivity of composite media is proposed. Useful formulae for effective thermal conductivity are derived, and meanings of contact resistance in engineering problems are explained.

Thermal conductivity of graded spherical composites with contact resistance

The effective thermal conductivity of graded composites with contact resistance on the inclusion surface is investigated. As an example, we have considered the graded composite media with a spherical particle embedded in a homogeneous matrix, where the thermal conductivity of spherical inclusion is an exponential function k(i) = c exp(betar) (where r is the inside distance of a point in particle from the center of the spherical particle in a spherical coordinate). For both heat contact resistance and perfect contact cases, we have given a reasonable effective medium approximation to calculate the effective conductivity. (C) 2003 Elsevier B.V. All rights reserved.

Effective thermal conductivity of graded nonlinear composites with heat contact resistance

The perturbation expansion method is used to find the effective thermal conductivity of graded nonlinear composites having thermal contact resistance on the inclusion surface. As an example, we have studied the graded composites with cylindrical inclusions immersed in a homogeneous matrix. The thermal conductivity of the cylindrical inclusion is assumed to have a power-law profile of the radial distance r measured from its origin. For weakly nonlinear constitutive relations between the heat flow density q and the temperature field T, namely, q = -mu del T - chi vertical bar del T vertical bar(2) del T, in both the inclusion and the matrix regions, we have derived the temperature distributions using the perturbation expansion method. A nonlinear effective medium approximation of graded composites is proposed to estimate the effective linear and nonlinear thermal conductivities. by considering the temperature singularity on the inclusion surface due to the heat contact resistance. (c) 2006 Elsevier B.V. All rights reserved.

The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications

The work presented in this paper focuses on the effect of reflow process on the contact resistance and reliability of anisotropic conductive film (ACF) interconnection. The contact resistance of ACF interconnection increases after reflow process due to the decrease in contact area of the conducting particles between the mating I/O pads. However, the relationship between the contact resistance and bonding parameters of the ACF interconnection with reflow treatment follows the similar trend to that of the as-bonded (i.e. without reflow) ACF interconnection. The contact resistance increases as the peak temperature of reflow profile increases. Nearly 40% of the joints were found to be open after reflow with 260 °C peak temperature. During the reflow process, the entrapped (between the chip and substrate) adhesive matrix tries to expand much more than the tiny conductive particles because of the higher coefficient of thermal expansion, the induced thermal stress will try to lift the bump from the pad and decrease the contact area of the conductive path and eventually, leading to a complete loss of electrical contact. In addition, the environmental effect on contact resistance such as high temperature/humidity aging test was also investigated. Compared with the ACF interconnections with Ni/Au bump, higher thermal stress in the Z-direction is accumulated in the ACF interconnections with Au bump during the reflow process owing to the higher bump height, thus greater loss of contact area between the particles and I/O pads leads to an increase of contact resistance and poorer reliability after reflow.

Effect of Coulomb blockade, gold resistance, and thermal expansion on the electrical resistance of ultrathin gold films

Controlling the electrical resistance of granular thin films is of great importance for many applications, yet a full understanding of electron transport in such films remains a major challenge. We have studied experimentally and by model calculations the temperature dependence of the electrical resistance of ultrathin gold films at temperatures between 2 K and 300 K. Using sputter deposition, the film morphology was varied from a discontinuous film of weakly coupled meandering islands to a continuous film of strongly coupled coalesced islands. In the weak-coupling regime, we compare the regular island array model, the cotunneling model, and the conduction percolation model with our experimental data. We show that the tunnel barriers and the Coulomb blockade energies are important at low temperatures and that the thermal expansion of the substrate and the island resistance affect the resistance at high temperatures. At low temperatures our experimental data show evidence for a transition from electron cotunneling to sequential tunneling but the data can also be interpreted in terms of conduction percolation. The resistivity and temperature coefficient of resistance of the meandering gold islands are found to resemble those of gold nanowires. We derive a simple expression for the temperature at which the resistance changes from non-metal-like behavior into metal-like behavior. In the case of strong island coupling, the total resistance is solely determined by the Ohmic island resistance.

Measurement of contact voltage drop and resistance in organic solar cells

Bulk heterojunction organic solar cells based on poly[4,7-bis(3- dodecylthiophene-2-yl) benzothiadiazole-co-benzothiadiazole] and [6,6]-phenyl C71-butyric acid methyl ester are investigated. A prominent kink is observed in the fourth quadrant of the current density-voltage (J-V) response. Annealing the active layer prior to cathode deposition eliminates the kink. The kink is attributed to an extraction barrier. The J-V response in these devices is well described by a power law. This behavior is attributed to an imbalance in charge carrier mobility. An expected photocurrent for the device displaying a kink in the J-V response is determined by fitting to a power law. The difference between the expected and measured photocurrent allows for the determination of a voltage drop within the device. Under simulated 1 sun irradiance, the peak voltage drop and contact resistance at short circuit are 0.14 V and 90 Ω, respectively. © 2012 American Institute of Physics.

Probing the Neutral Edge Modes in Transport across a Point Contact via Thermal Effects in the Read-Rezayi Non-Abelian Quantum Hall States

Non-Abelian quantum Hall states are characterized by the simultaneous appearance of charge and neutral gapless edge modes, with the structure of the latter being intricately related to the existence of bulk quasiparticle excitations obeying non-Abelian statistics. Here we propose a scenario for detecting the neutral modes by having two point contacts in series separated by a distance set by the thermal equilibration length of the charge mode. We show that by using the first point contact as a heating device, the excess charge noise measured at the second point contact carries a nontrivial signature of the presence of the neutral mode. We also obtain explicit expressions for the thermal conductance and corresponding Lorentz number for transport across a quantum point contact between two edges held at different temperatures and chemical potentials.

Thermal properties and thermal shock resistance of γ-Y 2Si2O7

Thermal properties, namely, Debye temperature, thermal expansion coefficient, heat capacity, and thermal conductivity of γ-Y 2Si2O7, a high-temperature polymorph of yttrium disilicate, were investigated. The anisotropic thermal expansions of γ-Y2Si2O7 powders were examined using high-temperature X-ray diffractometer from 300 to 1373 K and the volumetric thermal expansion coefficient is (6.68±0.35) × 10-6 K-1. The linear thermal expansion coefficient of polycrystalline γ-Y2Si2O7 determined by push-rod dilatometer is (3.90±0.4) × 10-6 K-1, being very close to that of silicon nitride and silicon carbide. Besides, γ-Y2Si2O7 displays a low-thermal conductivity, with a κ value measured below 3.0 W·(m·K) -1 at the temperatures above 600 K. The calculated minimum thermal conductivity, κmin, was 1.35 W·(m·K) -1. The unique combination of low thermal expansion coefficient and low-thermal conductivity of γ-Y2Si2O7 renders it a very competitive candidate material for high temperature structural components and environmental/thermal-barrier coatings. The thermal shock resistance of γ-Y2Si2O7 was estimated by quenching dense materials in water from various temperatures and the critical temperature difference, ΔTc, was determined to be 300 K.

An Experimental Study to Show the Effect of Thermal Stress on Thermal Contact Conductance at Sub-megapascal Contact Pressures

Experimental studies are presented to show the effect of thermal stresses on thermal contact conductance (TCC) at low contact pressures. It is observed that in a closed contact assembly, contact pressure acting on the interface changes with the changing temperature of contact members. This change in contact pressure consequently causes variations in the TCC of the junction. A relationship between temperature change and the corresponding magnitude of developed thermal stress in a contact assembly is determined experimentally. Inclusion of a term called temperature dependent load correction factor is suggested in the theoretical model for TCC to make it capable of predicting TCC values more accurately in contact assemblies that experience large temperature fluctuations. [DOI: 10.1115/1.4001615]

Thermal gap conductance at low contact pressures (<1 MPa): Effect of gold plating and plating thickness

Thermal contact conductance (TCC) measurements are made on bare and gold plated (<= 0.5 mu m) oxygen free high conductivity (OFHC) Cu and brass contacts in vacuum, nitrogen, and argon environments. It is observed that the TCC in gaseous environment is significantly higher than that in vacuum due to the enhanced thermal gap conductance. It is found that for a given contact load and gas pressure, the thermal gap conductance for bare OFHC Cu contacts is higher than that for gold plated contacts. It is due to the difference in the molecular weights of copper and gold, which influences the exchange of kinetic energy between the gas molecules and contact surfaces. Furthermore, the gap conductance is found to increase with increasing thickness of gold plating. Topography measurements and scanning electron microscopy (SEM) analysis of contact surfaces revealed that surfaces become smoother with increasing gold plating thickness, thus resulting in smaller gaps and consequently higher gap conductance. (C) 2010 Elsevier Ltd. All rights reserved.

Electrical Contact Resistance in Thin (<= 0.5 mu m) Gold Plated Contacts: Effect of Gold Plating Thickness

This paper describes the electrical contact resistance (ECR) measurements made on thin gold plated (gold plating of <= 0.5 mu m with a Ni underlayer of similar to 2 mu m) oxygen free high conductivity (OFHC) Cu contacts in vacuum environment. ECR in gold plated OFHC Cu contacts is found to be slightly higher than that in bare OFHC Cu contacts. Even though gold is a softer material than copper, the relatively high ECR values observed in gold plated contacts are mainly due to the higher hardness and electrical resistivity of the underlying Ni layer. It is well known that ECR is directly related to plating factor, which increases with increasing coating thickness when the electrical resistivity of coating material is more than that of substrate. Surprisingly, in the present case it is found that the ECR decreases with increasing gold layer thickness on OFHC Cu substrate (gold has higher electrical resistivity than OFHC Cu). It is analytically demonstrated from the topography and microhardness measurements results that this peculiar behavior is associated with thin gold platings, where the changes in surface roughness and microhardness with increasing layer thickness overshadow the effect of plating factor on ECR.