É́tude sur la cinétique des défauts structuraux dans le silicium amorphe.

Cette thèse présente à la fois des résultats de simulations numériques en plus de ré- sultats expérimentaux obtenus en laboratoire sur le rôle joué par les défauts de structure dans le silicium amorphe. Nos travaux de simulation numérique furent réalisés avec une nouvelle méthode de simulation Monte-Carlo cinétique pour décrire l’évolution tempo- relle de modèles de silicium amorphe endommagés sur plusieurs échelles de temps jus- qu’à une seconde à la température pièce. Ces simulations montrent que les lacunes dans le silicium amorphe sont instables et ne diffusent pas sans être détruites. Nous montrons également que l’évolution d’un modèle de silicium amorphe endommagé par une colli- sion ionique lors d’un recuit peut être divisée en deux phases : la première est dominée exclusivement par la diffusion et la création/destruction de défauts de liaison, alors que la deuxième voit les créations/destructions de liens remplacées par des échanges de liens entre atomes parfaitement coordonnés. Les défauts ont aussi un effet sur la viscosité du silicium amorphe. Afin d’approfondir cette question, nous avons mesuré la viscosité du silicium amorphe et du silicium amorphe hydrogéné sous l’effet d’un faisceau d’ions. Nous montrons que la variation de la viscosité dans les deux matériaux est différente : le silicium amorphe hydrogéné a une viscosité constante en fonction de la fluence des ions alors que le silicium amorphe pur a une viscosité qui augmente de façon linéaire. Pour de faibles fluences, la viscosité du silicium hydrogéné est plus grande que la viscosité sans hydrogène. La présence d’hydrogène diminue également l’amplitude de la variation logarithmique de la contrainte observée lors de la relaxation à la température de la pièce.

Environnement local des défauts structurels et ordre à moyenne portée dans le silicium amorphe

Malgré une vaste littérature concernant les propriétés structurelles, électroniques et ther- modynamiques du silicium amorphe (a-Si), la structure microscopique de ce semi-cond- ucteur covalent échappe jusqu’à ce jour à une description exacte. Plusieurs questions demeurent en suspens, concernant par exemple la façon dont le désordre est distribué à travers la matrice amorphe : uniformément ou au sein de petites régions hautement déformées ? D’autre part, comment ce matériau relaxe-t-il : par des changements homo- gènes augmentant l’ordre à moyenne portée, par l’annihilation de défauts ponctuels ou par une combinaison de ces phénomènes ? Le premier article présenté dans ce mémoire propose une caractérisation des défauts de coordination, en terme de leur arrangement spatial et de leurs énergies de formation. De plus, les corrélations spatiales entre les défauts structurels sont examinées en se ba- sant sur un paramètre qui quantifie la probabilité que deux sites défectueux partagent un lien. Les géométries typiques associées aux atomes sous et sur-coordonnés sont extraites du modèle et décrites en utilisant les distributions partielles d’angles tétraédriques. L’in- fluence de la relaxation induite par le recuit sur les défauts structurels est également analysée. Le second article porte un regard sur la relation entre l’ordre à moyenne portée et la relaxation thermique. De récentes mesures expérimentales montrent que le silicium amorphe préparé par bombardement ionique, lorsque soumis à un recuit, subit des chan- gements structuraux qui laissent une signature dans la fonction de distribution radiale, et cela jusqu’à des distances correspondant à la troisième couche de voisins.[1, 2] Il n’est pas clair si ces changements sont une répercussion d’une augmentation de l’ordre à courte portée, ou s’ils sont réellement la manifestation d’un ordonnement parmi les angles dièdres, et cette section s’appuie sur des simulations numériques d’implantation ionique et de recuit, afin de répondre à cette question. D’autre part, les corrélations entre les angles tétraédriques et dièdres sont analysées à partir du modèle de a-Si.

Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation

Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption

An investigation of metal oxides which are photoluminiscent at room temperature

Amorphous thin films, based on different network formers, were processed by a soft chemical process called the polymeric precursor method. The resultant amorphous metal oxides, displayed intense photoluminescence (PL) at room temperature. Heat treatment increases the PL intensity of these materials. Theoretical ab initio calculations are correlated with the observed experimental trends. (C) 2004 Elsevier B.V. All rights reserved.

PbO-GeO2 rib waveguides for photonic applications

This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO2 (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO2, in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.

Preparação e caracterização óptica de filmes nanocristalinos de GaAs:H depositados por RF magnetron sputtering

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Filmes orgânicos contendo óxido de alumínio depositados a plasma

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Avaliação técnica e econômica da implantação de sistemas fotovoltaicos no Aeroporto Internacional de Belém

O presente trabalho apresenta uma avaliação técnica e econômica para a instalação de um sistema fotovoltaico conectado à rede (SFCR) para a eletrificação do Aeroporto Internacional Val-de-Cans, localizado na cidade de Belém – Pará - Brasil. Trata-se de da avaliação de implantação de um projeto piloto na Região Norte, onde estuda-se a implantação de um SFCR na cobertura do Terminal Aeroportuário, em uma área de aproximadamente 16.000 m². A avaliação técnica foi realizada com auxílio dos dados meteorológicos e do consumo de energia elétrica referentes ao período de 2011 a 2012, da elaboração de duas opções de projeto de SFCR, sendo a primeira proposta com 191 subsistemas utilizando módulos de silício policristalinos, totalizando uma potência nominal de 2,3 MWp (nas condições padrões) e a segunda proposta com 82 subsistemas utilizando módulos de silício amorfo, totalizando uma potência nominal de 1,04 MWp (nas condições padrões). Na avaliação técnica utilizou-se também um software para simular o desempenho dos sistemas propostos durante um ano, destacando-se a avaliação de perfis de irradiância para um dia ensolarado e outro nublado. A avaliação econômica baseou-se nos projetos elaborados, sendo decisiva na escolha do sistema fotovoltaico mais indicado para a implantação, pois a proposta 1 possui um investimento inicial de R$ 14.970.089,48, estimando-se a redução da energia consumida da concessionária pelo terminal aeroportuário em no máximo 34%, referente ao mês com maior irradiação solar, e em 24% no mês com menor irradiação solar. A proposta 1 se pagará, sem o auxílio de outras fontes contribuintes, em aproximadamente 21 anos. Já a proposta 2 possui um custo de investimento inicial de R$ 10.067.826,13, reduzindo a energia consumida da concessionária pelo terminal aeroportuário em no máximo 15% no mês de maior irradiação solar, e em 11% no mês de menor irradiação solar, contudo, essa proposta não se pagará sem o auxílio de outras fontes contribuintes. Como resultado, pretende-se demonstrar o percentual de redução do consumo de energia elétrica fornecida pela concessionária, além de divulgar esta alternativa energética promissora e contribuir para a preservação do meio ambiente.

Linking origin of the electric field-assisted beta-PbF2 crystallization in lead oxyfluoroborate glasses below T (g) to simultaneous cathode/anode-compensated electrochemical reactions

Full validation of the electrochemical mechanisms so far postulated as driving force of electric field-assisted non-spontaneous crystallization development in given glasses has suffered experimental restrictions. In this work, we looked into origin of this phenomenon in lead oxyfluoroborate glasses, resulting in beta-PbF2 growth even below the corresponding glass transition temperatures, through achieving a systematic study of not only Pt,Ag/Glass/Ag,Pt- but also Pt,Ag/Glass/YSZ:PbF2/Ag,Pt-type cells, where YSZ:PbF2 represents a two-phase system (formed by Y2O3-doped ZrO2 and PbF2). It is demonstrated that crystallization induction in these glasses involves Pb2+ ions reduction at the cathode, the phenomenon being, however, confirmed only when the F- ions were simultaneously also able to reach the anode for oxidation, after assuring either a direct glass-anode contact or percolation pathways for free fluoride migration across the YSZ:PbF2 mixtures. A further support of this account is that the electrochemically induced beta-PbF2 phase crystallizes showing ramified-like microstructure morphology that arises, accordingly, from development of electroconvective diffusion processes under electric field action.

Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er3+ and Yb3+ ions

This work reports on the construction and spectroscopic analyses of optical micro-cavities (OMCs) that efficiently emit at ~1535 nm. The emission wavelength matches the third transmission window of commercial optical fibers and the OMCs were entirely based on silicon. The sputtering deposition method was adopted in the preparation of the OMCs, which comprised two Bragg reflectors and one spacer layer made of either Er- or ErYb-doped amorphous silicon nitride. The luminescence signal extracted from the OMCs originated from the 4I13/2→4I15/2 transition (due to Er3+ ions) and its intensity showed to be highly dependent on the presence of Yb3+ ions.According to the results, the Er3+-related light emission was improved by a factor of 48 when combined with Yb3+ ions and inserted in the spacer layer of the OMC. The results also showed the effectiveness of the present experimental approach in producing Si-based light-emitting structures in which the main characteristics are: (a) compatibility with the actual microelectronics industry, (b) the deposition of optical quality layers with accurate composition control, and (c) no need of uncommon elements-compounds nor extensive thermal treatments. Along with the fundamental characteristics of the OMCs, this work also discusses the impact of the Er3+-Yb3+ ion interaction on the emission intensity as well as the potential of the present findings.

Physical models for numerical simulation of Si-based nanoscale FETs and sensors

To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex interaction of charge transport in silicon nanowires of different dimensions with interface trap states and remote charges is addressed to correctly reproduce experimental results of recently fabricated gas nanosensors.

Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.

THE USE OF LIFE-CYCLE ANALYSIS TO REDUCE THE ENVIRONMENTAL IMPACT OF MATERIALS IN MANUFACTURING

This thesis is composed of three life-cycle analysis (LCA) studies of manufacturing to determine cumulative energy demand (CED) and greenhouse gas emissions (GHG). The methods proposed could reduce the environmental impact by reducing the CED in three manufacturing processes. First, industrial symbiosis is proposed and a LCA is performed on both conventional 1 GW-scaled hydrogenated amorphous silicon (a-Si:H)-based single junction and a-Si:H/microcrystalline-Si:H tandem cell solar PV manufacturing plants and such plants coupled to silane recycling plants. Using a recycling process that results in a silane loss of only 17 versus 85 percent, this results in a CED savings of 81,700 GJ and 290,000 GJ per year for single and tandem junction plants, respectively. This recycling process reduces the cost of raw silane by 68 percent, or approximately $22.6 and $79 million per year for a single and tandem 1 GW PV production facility, respectively. The results show environmental benefits of silane recycling centered around a-Si:H-based PV manufacturing plants. Second, an open-source self-replicating rapid prototype or 3-D printer, the RepRap, has the potential to reduce the environmental impact of manufacturing of polymer-based products, using distributed manufacturing paradigm, which is further minimized by the use of PV and improvements in PV manufacturing. Using 3-D printers for manufacturing provides the ability to ultra-customize products and to change fill composition, which increases material efficiency. An LCA was performed on three polymer-based products to determine the CED and GHG from conventional large-scale production and are compared to experimental measurements on a RepRap producing identical products with ABS and PLA. The results of this LCA study indicate that the CED of manufacturing polymer products can possibly be reduced using distributed manufacturing with existing 3-D printers under 89% fill and reduced even further with a solar photovoltaic system. The results indicate that the ability of RepRaps to vary fill has the potential to diminish environmental impact on many products. Third, one additional way to improve the environmental performance of this distributed manufacturing system is to create the polymer filament feedstock for 3-D printers using post-consumer plastic bottles. An LCA was performed on the recycling of high density polyethylene (HDPE) using the RecycleBot. The results of the LCA showed that distributed recycling has a lower CED than the best-case scenario used for centralized recycling. If this process is applied to the HDPE currently recycled in the U.S., more than 100 million MJ of energy could be conserved per annum along with significant reductions in GHG. This presents a novel path to a future of distributed manufacturing suited for both the developed and developing world with reduced environmental impact. From improving manufacturing in the photovoltaic industry with the use of recycling to recycling and manufacturing plastic products within our own homes, each step reduces the impact on the environment. The three coupled projects presented here show a clear potential to reduce the environmental impact of manufacturing and other processes by implementing complimenting systems, which have environmental benefits of their own in order to achieve a compounding effect of reduced CED and GHG.

Concentration and composition of aerosols over the North Atlantic in August 1995

Data on composition of aerosols are considered. Investigations include electron microscopy, grain size, mineralogical and chemical analyses. Samples of aerosols were collected Cruise 37 of R/V Akademik Mstislav Keldysh along a transatlantic section along 40°-50°N. Variability of concentrations and composition of aerosols with distance from continents is shown: concentrations of aerosols decrease by factor of ten and more. Significant portion of mineral components in aerosols collected over the continent is replaced by organic matter due to mechanical differentiation during transportation. Such anthropogenic components as soot, ash, and combustion spheres were detected in all samples. North African dust was found in one sample in the western part of the section.

Mineralogy and geochemistry of sedimentary deposits at DSDP Leg 55 Holes

The four holes (including a re-entry hole) drilled at Site 433 allow determination of the sedimentary sequence of Suiko Seamount in the Emperor chain. The holes are in a small graben basin situated within a lateral lagoon on the seamount. The sedimentary deposits range from the Paleocene to the upper Pliocene and are not uniform and continuous. A major hiatus exists at the top of the lower Eocene reef sediment, below the lower and upper Miocene pelagic sediments. The depositional history and succession of environments are shown by mineralogical and geochemical changes in the sediments.