~(59)Co~(2+)对~1H与~(35)Cl的NMR影响

<正> 在前文的基础上,用~(59)CO~2+Cl_2·6H_2O加D_2O作为样品,在200MHz谱仪上观察~1H,在400MHz谱仪上观察~(35)Cl,研究强顺磁离子~(59)Co~2+(s=3/2,I=7/2)在外加直流磁场H_0作用下,它对~1H与~(35)Cl的NMR影响。因为强顺磁离子~(59)Co~(2+)的电子自旋(s=3/2)是围绕着核旋转的,因此可以统计平均计算,

2 to 3 μm Raman-soliton continuum enabled by a nanotube mode-locked Tm-doped MOPFA

We demonstrate a Raman-soliton continuum extending from 2 to 3 μm, in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system delivering 12 kW sub-picosecond pulses at 1.95 μm. © OSA 2013.

Mode Characteristics for Square Resonators With a Metal Confinement Layer

Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

Design of novel polarization beam splitter in two-dimensional photonic crystal

We present the design and the simulation of an ultracompact high efficiency polarization beam splitter (PBS) based on the properties of the light waves propagating in straight waveguide and composite structure photonic crystal. The splitting properties of the PBS are numerically simulated and analyzed by using the plane wave expansion (PWE) method and finite difference time domain (FDTD) method. The PBS consists of three parts, namely, input waveguide, beam structure and output waveguide. It is shown that a high efficiency and a large separating angle for TE mode and TM mode can be achieved. Owing to these excellent features, including small size and high rate, the PBS makes a promising candidate in the future photonic integrated circuits.

基于TM模激射的圆柱形结构的微盘激光器

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Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 mu m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 mu m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 mu m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 mu m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm(2) with as-cleaved facet mirrors. (c) 2005 American Institute of Physics.

An improved TM method for full two-port calibration of the asymmetric test fixtures

Three known standards, including at least one transmission standard, are normally required for the full two-port calibration of test fixtures. Based on the triple-through method, a new general-purpose calibration procedure using only one known reflection standard is proposed in this paper. The experimental results show that our method call provide a simple and accurate approach to fall two-port calibration of the asymmetric test fixtures. (c) 2005 Wiley Periodicals, Inc.

High-Q TM whispering-gallery modes in three-dimensional microcylinders

We present a generation condition for realizing high-Q TM whispering-gallery modes (WGMs) in semiconductor microcylinders. For microcylinders with symmetry or weak asymmetry vertical waveguiding, we show that TM WGMs can have a high Q factor, with the magnitude of 10(4) at the radius of the microcylinder of 1 mu m, by three-dimensional numerical simulation. The Q factor of TE WGMs is much less than that of TM WGMs in the semiconductor microcylinders due to a vertical radiation loss caused by mode coupling with the vertical propagating mode. The results open up a possible application of TM WGMs in semiconductor microcylinders for efficient current injection microlasers and single photon sources.

Mode characteristics for equilateral triangle optical resonators

Mode characteristics of equilateral triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C-3v. The results show that doubly degenerate eigenstates can be reduced to the A(1) and A(2) representations of C-3v, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation Of C-3v. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 mu m, and the mode wavelength intervals are compared with the analytical results.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

Prediction of simultaneously large and opposite generalized Goos-Hanchen shifts for TE and TM light beams in an asymmetric double-prism configuration

It is predicted that large and opposite generalized Goos-Hanchen (GGH) shifts may occur simultaneously for TE and TM light beams upon reflection from an asymmetric double-prism configuration when the angle of incidence is below but near the critical angle for total reflection, which may lead to interesting applications in optical devices and integrated optics. Numerical simulations show that the magnitude of the GGH shift can be of the order of beam's width.