2 to 3 μm Raman-soliton continuum enabled by a nanotube mode-locked Tm-doped MOPFA

We demonstrate a Raman-soliton continuum extending from 2 to 3 μm, in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system delivering 12 kW sub-picosecond pulses at 1.95 μm. © OSA 2013.

基于TM模激射的圆柱形结构的微盘激光器

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Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

An improved TM method for full two-port calibration of the asymmetric test fixtures

Three known standards, including at least one transmission standard, are normally required for the full two-port calibration of test fixtures. Based on the triple-through method, a new general-purpose calibration procedure using only one known reflection standard is proposed in this paper. The experimental results show that our method call provide a simple and accurate approach to fall two-port calibration of the asymmetric test fixtures. (c) 2005 Wiley Periodicals, Inc.

High-Q TM whispering-gallery modes in three-dimensional microcylinders

We present a generation condition for realizing high-Q TM whispering-gallery modes (WGMs) in semiconductor microcylinders. For microcylinders with symmetry or weak asymmetry vertical waveguiding, we show that TM WGMs can have a high Q factor, with the magnitude of 10(4) at the radius of the microcylinder of 1 mu m, by three-dimensional numerical simulation. The Q factor of TE WGMs is much less than that of TM WGMs in the semiconductor microcylinders due to a vertical radiation loss caused by mode coupling with the vertical propagating mode. The results open up a possible application of TM WGMs in semiconductor microcylinders for efficient current injection microlasers and single photon sources.

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

Prediction of simultaneously large and opposite generalized Goos-Hanchen shifts for TE and TM light beams in an asymmetric double-prism configuration

It is predicted that large and opposite generalized Goos-Hanchen (GGH) shifts may occur simultaneously for TE and TM light beams upon reflection from an asymmetric double-prism configuration when the angle of incidence is below but near the critical angle for total reflection, which may lead to interesting applications in optical devices and integrated optics. Numerical simulations show that the magnitude of the GGH shift can be of the order of beam's width.