DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset DELTAE(c) was determined to be 0.260 eV, corresponding to 63% of DELTAE(g). A calculation was also carried out based on this tunneling model by using the experimental value of DELTAE(c) = E2 - E1 = 0. 260 eV, and good agreement between the experimental and calculated curves is obtained.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

A study of the scaling height of the tropospheric aerosol and its extinction coefficient profile

IEECAS SKLLQG

Enhance the optical absorptivity of nanocrystalline TiO2 film with high molar extinction coefficient ruthenium sensitizers for high performance dye-sensitized solar cells

We report two new heteroleptic polypyridyl ruthenium complexes, coded C101 and C102, with high molar extinction coefficients by extending the pi-conjugation of spectator ligands, with a motivation to enhance the optical absorptivity of mesoporous titania film and charge collection yield in a dye-sensitized solar cell. On the basis of this C101 sensitizer, several DSC benchmarks measured under the air mass 1.5 global sunlight have been reached.

Conjugation of Selenophene with Bipyridine for a High Molar Extinction Coefficient Sensitizer in Dye-Sensitized Solar Cells

A high molar extinction coefficient heteroleptic polypyridyl ruthenium sensitizer, featuring a conjugated electron-rich selenophene unit in its ancillary ligand, has been synthesized and demonstrated as an efficient sensitizer in dye-sensitized solar cells. A nanocrystalline titania film stained with this sensitizer shows improved optical absorptivity, which is highly desirable for dye-sensitized solar cells with a thin photoactive layer. With preliminary testing, this sensitizer has already achieved a high efficiency of 10.6% measured under the air mass 1.5 global conditions.

An Extremely High Molar Extinction Coefficient Ruthenium Sensitizer in Dye-Sensitized Solar Cells: The Effects of pi-Conjugation Extension

We report a heteroleptic ruthenium complex (007) featuring the electron-rich 5-octyl-2,2'-bis(3,4-ethylenedioxythiophene) moiety conjugated with 2,2-bipyridine and exhibiting 10.7% power conversion efficiency measured at the AM1.5G conditions, thanks to the enhanced light-harvesting that is closely related to photocurrent. This C107 sensitizer has an extremely high molar extinction coefficient,of 27.4 x 10(3) M-1 cm(-1) at 559 nm in comparison to its analogue C103 (20.5 x 10(3) M-1 cm(-1) at 550 nm) or Z907 (12.2 x 10(3) M(-1)cm(-1) at 521 nm) with the corresponding 5-hexyl-3,4-ethylenedioxythiopliene- or nonyl-substituted bipyridyl unit. The augmentation of molar extinction coefficients and the bathochromic shift of low-energy absorption peaks along with the pi-conjugation extension are detailed by TD-DFT calculations. The absorptivity of mesoporous titania films grafted with Z907, C103, or C107 sublinearly increases with the molar extinction coefficient of sensitizers, which is consistent with the finding derived from the surface coverage measurements that the packing density of those sensitizers decreases with the geometric enlargement of ancillary ligands.

Estimation thermal expansion coefficient from lattice energy for inorganic crystals

By using the study of the lattice energy and the structural parameters of binary inorganic crystals, a new parameter reflecting the thermal expansion property has been found, the relation between the linear expansion coefficient and new parameter has been established. A semiempirical method for evaluation of linear expansion coefficient from the lattice energy is presented, and developed to the complex crystals. The estimated values of the linear expansion coefficients of both simple and complex crystals are in good agreement with the experimental values.

Calculation of the thermal expansion coefficient for Bi2Sr2CaCu2O8

An estimation method of thermal expansion coefficient in term of lattice energy which was developed earlier for simple materials is extended to a complex material of Bi2Sr2CaCu2O8 (Bi-2212). The calculation of the chemical bond property and thermal expansion coefficient of Bi-2212 has been carried out and the theoretical values were in good agreement with the corresponding experimental results. The dependence of the thermal expansion coefficient on the different structures and on the flexible oxidation states of Bi and Cu are investigated. The results indicate that the thermal expansion coefficients of Bi-2212 are insensitive to the low lattice distortion of the average structure and the changes of formal valences of Bi and Cu ions.

A novel electrochemical method for simultaneously measuring diffusion coefficient and ion transference number

This paper introduces a new method to estimate the diffusion coefficient and transference number of a salt or an electroactive ion in a solution with little or no supporting electrolyte. The above two parameters can be obtained from a single potential step experiment without previous knowledge of either one. It would appear that the method could also be used in the study of ion transport in a high viscosity solvent or a solid electrolyte. (C) 1998 Elsevier Science S.A.

Dependence of linear electro-optic coefficient on difference in the atomic sizes in zinc blende crystals

Covalent radii of the bonding elements have strong effects on the linear electro-optic coefficients of zinc blende crystals; these effects can be quantitatively determined by investigating the relation between the difference in the atomic sizes rho and the magnitude of the linear electro-optic tensor coefficient r(41). It is interesting to note that for the same cation Zn2+, Ga3+, or In3+ the magnitude of r(41) increases with increased covalent radius of the bonded anion r(beta). Especially with the increasing tendency of the parameter rho, the magnitude of r(41) of crystals that have a same cation will increase suddenly when the value of r(beta) becomes larger. (C) 1997 Academic Press.