In-situ-Hochtemperatur-Mössbauer-Spektroskopie und Bandstruktur-Rechnungen an Eisennitriden und gemischtvalenten Verbindungen

Zusammenfassung

Die stöchiometrischen Eisennitride g'-Fe₄N, e-Fe₃N und z-Fe₂N sind durchRöntgen- und Neutronenstreuung gut charakterisiert. Allerdings weist das Fe/N-Phasendiagramm noch vieleungeklärte Stellen auf. So konnten im Bereich von alpha-Fe bis g'-Fe₄N noch keine weiterenNitride isoliert werden. Die Verbindung a''-Fe₁₆N₂ konntenoch nicht rein darzustellen werden.

Besonderes Interesse besteht in der Aufklärung desMechanismus der Entstehung der Eisennitride bei derUmsetzung von a-Eisen mitAmmoniak. Diese Reaktion wird großtechnisch zurNitridierhärtung von Eisenwerkstücken genutzt.

Als Messmethode wurde die⁵⁷Fe-Mößbauer-Spektroskopiegewählt, die auf Kernspinübergängen von⁵⁷Fe beruht. Um in situ-Nitridierungen von Eisenproben mit Ammoniak mitder ⁵⁷Fe-Mößbauer-Spektroskopieverfolgen zu können, wurde eineHochtemperatur-Messzelle entwickelt, die es erlaubt,Messungen bis 1100 K durchzuführen. Die Messzelle wurde durch Messungen an Eisennitriden mitbekannter Stöchiometrie, wie z.B. g'-Fe₄N und e-Fe₃N, durchgeführt.

Neben ⁵⁷Fe-Mößbauer-Messungen wurdenim Rahmen des DFG-Schwerpunkt-Programms Reaktivitätin Festkörpern weitere Messungen (u.a.Hochtemperatur-Leitfähigkeitsmessungen)durchgeführt.

Die experimentellen Methoden wurden durchBandstruktur-Rechnungen ergänzt. Mit Hilfe der TB-LMTO-ASA-Methode erfolgten Rechnungen anÜbergangsmetallnitriden M₃N (M = Mn, Fe, Co,Ni, Cu) der 3d-Reihe. Hierbei konnte der experimentell bestimmte strukturelleÜbergang von hexagonalem Ni₃N zu kubischemCu₃N bestätigt werden.

Synthesis of novel solid materials from carbon dioxide and carbon monoxide

The increase of atmospheric CO2 has been identified as the primary cause for the observed global warming over the past century. The geological and oceanic sequestration of CO2 has issues, such as cost and leakage as well as effects on sea biota. The ideal solution should be the conversion of CO2 into useful materials. However, most processes require high energy input. Therefore, it is necessary to explore novel processes with low energy demands to convert CO2 to useful solid materials. Amorphous carbon nitride and graphone received much attention due to their unusual structures and properties as well as their potential applications. However, to date there has been no attempt to synthesize those solid materials from CO2. Lithium nitride (Li3N) and lithium imide (Li2NH) are important hydrogen storage materials. However, their optical properties and reactivity has not yet studied. This dissertation research is aimed at the synthesis of carbon nitrides and graphone from CO2 and CO via their reaction with Li3N and Li2NH. The research was focused on (1) the evaluation of Li3N and Li2NH properties, (2) thermodynamic analysis of conversion of carbon dioxide and carbon monoxide into carbon nitride and other solid materials, (3) synthesis of carbon nitride from carbon dioxide, and (4) synthesis of graphone from carbon monoxide. First, the properties of Li3N, Li2NH, and LiNH2 were investigated. The X-ray diffraction measurements revealed that heat-treatment at 500°C introduce a phase transformation of β-Li3N to α-Li3N. Furthermore, the UV-visible absorption evaluation showed that the energy gaps of α-Li3N and β-Li3N are 1.81 and 2.14 eV, respectively. The UV-visible absorption measurements also revealed that energy gaps are 3.92 eV for Li2NH and 3.93 eV for LiNH2. This thermodynamic analysis was performed to predict the reactions. It was demonstrated that the reaction between carbon dioxide and lithium nitride is thermodynamically favorable and exothermic, which can generate carbon nitride and lithium cyanamide. Furthermore, the thermodynamic calculation indicated that the reaction between carbon monoxide and lithium imide can produce graphone and lithium cyanamide along with releasing heat. Based on the above thermodynamic analysis, the experiment of CO2 and Li3N reaction and CO and Li2NH were carried out. It was found that the reaction between CO2 and Li3N is very fast and exothermic. The XRD and element analysis revealed that the products are crystal lithium cyanamide and amorphous carbon nitrides with Li2O and Li2CO3. Furthermore, TEM images showed that carbon nitrides possess layer-structure, namely, it is graphene-structured carbon nitride. It was found that the reaction between Li2NH and CO was also exothermic, which produced graphone instead of carbon nitride. The composition and structures of graphone were evaluated by XRD, element analysis, TEM observation, and Raman spectra.

The Age-Hardening of Magnesium with Aluminum and Zinc

Magnesium is one of the most active elements and forms oxides, nitrides, and carbides, but not hydrides. Due to its activity, low melting point, low strength when unalloyed, and the difficulty with which it is worked, magnesium has not been and is not at present well developed.

E-beam nanopatterning for the selective area growth of III-V nitride nanorods

GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].

Influence of aluminium on dimensional change of sintered 430 Ferritic Stainless Steel

Aluminium is added to decrease matrix chromium losses on 430 stainless steel sintered on nitrogen atmosphere. Three different ways were used to add a 3% (in weight) aluminium: as elemental powder, as prealloyed powder, and as intermetallic Fe-AI compound. After die pressing at densities between 6.1-6.5 g/cm3, samples were sintered on vacuum and on N2-5%H2 atmosphere in a dilatometric furnace. Therefore, dimensional change was recorded during sintering. Weight gain was obtained after nitrogen sintering on all materials due to nitrides formation. Sample expansion was obtained on all nitrogen sintered steels with Al additions. Microstructure showed a dispersion of aluminium nitrides when pre-alloyed powders are used. On the contrary, aluminium nitride areas can be found when aluminium is added as elemental powders or as Fe-AI intermetallics. Also nitrogen atmosphere leads to austenite formation and hence, on cooling, dilatometric results showed a dimensional change at austenitic-ferritic phase transformation temperature.

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

New inorganic nanotube polymer nanocomposites: Improved thermal, mechanical and tribological properties in isotactic polypropylene incorporating INT-MoS2.

Environmentally friendly molybdenum disulfide (INT-MoS2) inorganic nanotubes were introduced into an isotactic polypropylene (iPP) polymer matrix to generate novel nanocomposite materials through an advantageous melt-processing route. The effects of INT-MoS2 content on the thermal, mechanical and tribological properties were investigated. The incorporation of INT-MoS2 generates notable performance enhancements through reinforcement effects, highly efficient nucleation activity and excellent lubricating ability in comparison with other nanoparticle fillers such as nanoclays, carbon nanotubes, silicon nitrides and halloysite nanotubes. It was shown that these INT-MoS2 nanocomposites can provide an effective balance between performance, cost effectiveness and processability, and should be of some interest in the area of multifunctional polymer nanocomposite materials.

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.

Vanadium-Doped In and Sn Sulphides: Photocatalysts able to use the whole visible light spectrum

Using photocatalysis for energy applications depends, more than for environmental purposes or selective chemical synthesis, on converting as much of the solar spectrum as possible; the best photocatalyst, titania, is far from this. Many efforts are pursued to use better that spectrum in photocatalysis, by doping titania or using other materials (mainly oxides, nitrides and sulphides) to obtain a lower bandgap, even if this means decreasing the chemical potential of the electron-hole pairs. Here we introduce an alternative scheme, using an idea recently proposed for photovoltaics: the intermediate band (IB) materials. It consists in introducing in the gap of a semiconductor an intermediate level which, acting like a stepstone, allows an electron jumping from the valence band to the conduction band in two steps, each one absorbing one sub-bandgap photon. For this the IB must be partially filled, to allow both sub-bandgap transitions to proceed at comparable rates; must be made of delocalized states to minimize nonradiative recombination; and should not communicate electronically with the outer world. For photovoltaic use the optimum efficiency so achievable, over 1.5 times that given by a normal semiconductor, is obtained with an overall bandgap around 2.0 eV (which would be near-optimal also for water phtosplitting). Note that this scheme differs from the doping principle usually considered in photocatalysis, which just tries to decrease the bandgap; its aim is to keep the full bandgap chemical potential but using also lower energy photons. In the past we have proposed several IB materials based on extensively doping known semiconductors with light transition metals, checking first of all with quantum calculations that the desired IB structure results. Subsequently we have synthesized in powder form two of them: the thiospinel In2S3 and the layered compound SnS2 (having bandgaps of 2.0 and 2.2 eV respectively) where the octahedral cation is substituted at a â?10% level with vanadium, and we have verified that this substitution introduces in the absorption spectrum the sub-bandgap features predicted by the calculations. With these materials we have verified, using a simple reaction (formic acid oxidation), that the photocatalytic spectral response is indeed extended to longer wavelengths, being able to use even 700 nm photons, without largely degrading the response for above-bandgap photons (i.e. strong recombination is not induced) [3b, 4]. These materials are thus promising for efficient photoevolution of hydrogen from water; work on this is being pursued, the results of which will be presented.

Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns

A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong polarization fields that may reduce efficiency.

Development and characterization of an FK photovoltaic concentrator for maximum conversion efficiency

The outdoor measurements of a single-cell concentrator PV module reaching a regressed 35.6% efficiency and a maximum peak efficiency of 36.0% (both corrected @Tcell=25ºC) are presented. This is the result of the joint effort by LPI and Solar Junction to demonstrate the potential of combining their respective state-of-the-art concentrator optics and solar cells. The LPI concentrator used is an FK, which is an advanced nonimaging concentrator using 4-channel Köhler homogenization, with a primary Fresnel lens and a refractive secondary made of glass. Solar Junction’s cell is a triplejunction solar cell with the A-SLAMTM architecture using dilute-nitrides.

Influencia de la atmósfera de sinterización en las propiedades mecánicas de los aceros P/M AISI 430.LInfluence of sintering atmosphere on the mechanical properties of steel P/M AISI 430L

Se ha estudiado el acero inoxidable pulvimetalúrgico AISI 430L, comparando la sinterización en dos atmósferas diferentes; en vacío, y en una atmósfera que contiene nitrógeno. Se ha desarrollado un tratamiento térmico con objeto de incrementar las propiedades mecánicas, mediante la modificación microestructural de los nitruros complejos de hierro y cromo precipitados durante la etapa de sinterización. Se han evaluado las propiedades físicas y a la vez se ha realizado un análisis microestructural con el fin de relacionar la microestructura con el incremento en las propiedades mecánicas. Influence of sintering atmosphere on the mechanical properties of steel P / M AISI 430L. It has studied the stainless steel powder metallurgy AISI 430L. It has compared the sintering in two different atmospheres; in vacuum, and in an atmosphere containing nitrogen. It has developed a heat treatment with the aim of improving the mechanical properties. This has been done through microstructural modification of complex nitrides of iron and chromium precipitates during the phase of sintering. Physical properties have been evaluated and are been performing a microstructural analysis for microstructure related to the increase in mechanical properties.

Incorporación de escorias de aluminio en la fabricación de productos de Arcilla cocida

Las sociedades desarrolladas generan una gran cantidad de residuos, que necesitan una adecuada gestión. Esta problemática requiere, de este modo, una atención creciente por parte de la sociedad, debido a la necesidad de proteger el medio ambiente. En este sentido, los esfuerzos se centran en reducir al máximo la generación de residuos y buscar vías de aprovechamiento de aquellos que son inevitables, soluciones mucho más aconsejables desde el punto de vista técnico, ecológico y económico que su vertido o destrucción. Las industrias deben adoptar las medidas precisas para fomentar la reducción de estos residuos, desarrollar tecnologías limpias que permitan el ahorro de los recursos naturales que poseemos, y sobre todo buscar métodos de reutilización, reciclado, inertización y valorización de los residuos generados en su producción. La industria de la construcción es un campo muy receptivo para el desarrollo de nuevos materiales en los que incorporar estos residuos. La incorporación de diferentes residuos industriales en matrices cerámicas se plantea como una vía barata de fijar las diferentes especies metálicas presentes en transformación de rocas ornamentales, lodos de galvanización o metalúrgicos, etc. En todos los casos, la adición de estos residuos requiere su caracterización previa y la optimización de las condiciones de conformado y cocción en el caso de su incorporación a la arcilla cocida. Entre los residuos incorporados en materiales de construcción se encuentran las escorias de aluminio. La industria metalúrgica produce durante sus procesos de fusión diferentes tipos de escorias. Su reciclado es una de las líneas de interés para estas industrias. En el caso de las escorias de aluminio, su tratamiento inicial consiste en una recuperación del aluminio mediante métodos mecánicos seguido de un tratamiento químico, o plasma. Este método conduce a que la escoria final apenas contenga aluminio y sea rica en sales solubles lo que limita su almacenamiento en escombreras. La escoria es una mezcla de aluminio metal y productos no metálicos como óxidos, nitruros y carburos de aluminio, sales y otros óxidos metálicos. En este estudio se ha analizado la posibilidad de la adición de escorias de aluminio procedentes de la metalurgia secundaria en materiales de construcción, de forma que tras un procesado de las mismas permita la obtención de materiales compuestos de matriz cerámica. En la presente Tesis Doctoral se ha analizado la viabilidad técnica de la incorporación de las escorias de aluminio procedentes de la metalurgia secundaria en una matriz de arcilla cocida. Para ello se han aplicado diferentes tratamientos a la escoria y se han aplicado diferentes variables en su procesado como la energía de molienda o la temperatura de sinterizacion, además del contenido de escoria. Su compactación con agua entre el 5-10 %, secado y sinterización permite obtener piezas rectangulares de diverso tamaño. Desde el punto de vista del contenido de la escoria, se incorporó entre un 10 y 40% de escoria TT, es decir sometida una calcinación previa a 750ºC en aire. Los mejores resultados alcanzados corresponden a un contenido del 20% ESC TT, sinterizada a 980ºC, por cuanto altos contenidos en escoria condicen a piezas con corazón negro. Los productos obtenidos con la adición de 20% de escoria de aluminio a la arcilla, presentan una baja expansión tras sinterización, mejores propiedades físicas y mecánicas, y mayor conductividad térmica que los productos obtenidos con arcilla sin adiciones. Aumenta su densidad, disminuye su absorción y aumenta sus resistencias de flexión y compresión, al presentar una porosidad cerrada y una interacción escoria-matriz. En todos los casos se produce una exudación superficial de aluminio metálico, cuyo volumen está relacionado con la cantidad de escoria adicionada. Mediante la incorporación de este contenido de escoria, tras un tratamiento de disolución de sales y posterior calcinación (ESC TTQ), se mejoran las propiedades del material compuesto, no sólo sobre la de la escoria calcinada (ESC TT), sino también, sobre la escoria sin tratamiento (ESC). Si además, la adición del 20% de escoria añadida, está tratada, no sólo térmicamente sino también químicamente (ESC TTQ), éstas mejoran aún más las propiedades del material compuesto, siendo el producto más compacto, con menos poros, por lo que los valores de densidad son más elevados, menores son las absorciones y mayores resistencias de flexión y compresión, que los productos obtenidos con la adición de escoria sólo tratada térmicamente. Alcanzando valores de resistencias características a compresión del orden de 109 MPa. Los valores de conductividad térmica obtenidos también son mayores. Los ensayos tecnológicos con piezas de 160 x 30 x 5 mm y el material compuesto optimizado de arcilla+ 20%ESCTTQ, consistieron en la determinación de su expansión por humedad, eflorescencia y heladicidad, mostrando en general un mejor comportamiento que la arcilla sin adiciones. Así, se han obtenido nuevos materiales compuestos de matriz cerámica para la construcción, mejorando sus propiedades físicas, mecánicas y térmicas, utilizando escorias de aluminio procedentes de la metalurgia secundaria, como opción de valorización de estos residuos, evitando así, que se viertan a vertederos y contaminen el medio ambiente. ABSTRACT Developed societies generate a lot of waste, which need proper management. Thus, this problem requires increased attention from the society, due to the need to protect the environment. In this regard, efforts are focused on to minimize the generation of waste and find ways of taking advantage of those who are inevitable, much more advisable solutions from the technical, ecological and economic viewpoint to disposal or destruction. Industries should adopt precise measures to promote waste reduction, develop clean technologies that allow the saving of natural resources that we possess, and above all seek methods of reuse, recycling, recovery and valorisation of the waste generated in their production. The industry of the construction is a very receptive field for the development of new materials in which to incorporate these residues. The incorporation of different industrial residues in ceramic counterfoils appears as a cheap route to fix the different metallic present species in transformation of ornamental rocks, muds of galvanization or metallurgical, etc. In all the cases, the addition of these residues needs his previous characterization and the optimization of the conditions of conformed and of baking in case of his incorporation to the baked clay. Residues incorporated into construction materials include aluminium slag. The metallurgical industry produces during their fusion processes different types of slags. Recycling is one of the lines of interest to these industries. In the case of aluminium slag, their initial treatment consists of a recovery of the aluminium using mechanical methods followed by chemical treatment, or plasma. This method leads to that final slag just contains aluminium and is rich in soluble salts which limits storage in dumps. The slag is a mixture of aluminium metal and non-metallic such as oxides, nitrides and carbides of aluminium salts products and other metal oxides. The present Doctoral thesis has analysed the technical viability of the incorporation of aluminium slag from secondary Metallurgy in an array of baked clay. So they have been applied different treatments to the slag and have been applied different variables in its processing as the temperature of sintering, in addition to the content of slag or energy grinding. Its compaction with water between 5-10%, drying and sintering allows rectangular pieces of different size. From the point of view of the content of the slag, it is incorporated between 10 and 40% slag TT, that is to say, submitted a calcination prior to 750 ° C in air. The best results achieved correspond to 20% ESC TT, sintered at 980 ° C, as high levels of slag in accordance to pieces with black heart. The products obtained with the addition of 20% of slag from aluminium to clay, present a low expansion after sintering, better physical properties and mechanical, and higher thermal conductivity than the products obtained with clay, without addictions. Its density increases, decreases its absorption and increases its resistance to bending and compression, introducing a closed porosity and slag-matrix interaction. In all cases there is a superficial exudation of metallic aluminium, whose volume is related to the amount of slag added. By incorporating this content of slag, following a treatment of salt solution and subsequent calcination (ESC TTQ), are improved the properties of composite material not only on the calcined slag (ESC TT), but also in the slag without treatment (ESC). If the addition of 20% of slag added, is also treated, not only thermally but also chemically (ESC TTQ), they further improve the properties of the composite material, the product is more compact, less porous, so the values are higher density, minors are absorptions and greater resistance in bending and compression, to the products obtained with the addition of slag only treated thermally. Reaching values of compressive resistance characteristic of the order of 109 MPa. The thermal conductivity values obtained are also higher. Testing technology with pieces of 160 x 30 x 5 mm and optimized composite material of clay 20% ESCTTQ, consisted in the determination of its expansion by moisture, efflorescence and frost resistance, in general, showing a better performance than the clay without additions. Thus, we have obtained new ceramic matrix composite materials for construction, improving its physical, mechanical and thermal properties, using aluminium slag secondary metallurgy, as an option Valuation of these wastes, thus preventing them from being poured to landfills and pollute environment.

Comportamento em desgaste por erosão cavitação, erosão - corrosão e em ensaios de microesclerometria linear instrumentada de um aço inoxidável martensítico AISI 410 nitretado a plasma em baixa temperatura, utilizando a tecnologia de tela ativa.

Amostras de um aço inoxidável martensítico AISI 410 temperado e revenido foram nitretadas a plasma em baixa temperatura usando o tratamento de nitretação plasma DC e a nitretação a plasma com tela ativa. Ambos os tratamentos foram realizados a 400 °C, utilizando mistura gasosa de 75 % de nitrogênio e 25 % de hidrogênio durante 20 horas e 400 Pa de pressão. As amostras de aço AISI 410 temperado e revenido foram caracterizadas antes e depois dos tratamentos termoquímicos, usando as técnicas de microscopia óptica, microscopia eletrônica de varredura, medidas de microdureza, difração de raios X e medidas de teor de nitrogênio em função da distância à superfície por espectrometria WDSX de raios X. A resistência à erosão por cavitação do aço AISI 410 nitretado DC e com tela ativa foi avaliada segundo a norma ASTM G32 (1998). Os ensaios de erosão, de erosão - corrosão e de esclerometria linear instrumentada segundo norma ASTM C1624 (2005) somente foram realizados no aço AISI 410 nitretado com tela ativa. Ensaios de nanoindentação instrumentada forma utilizados para medir a dureza (H) e o módulo de elasticidade reduzido (E*) e calcular as relações H/E* e H3/E*2 e a recuperação elástica (We), utilizando o método proposto por Oliver e Pharr. Ambos os tratamentos produziram camadas nitretadas de espessura homogênea constituídas por martensita expandida supersaturada em nitrogênio e nitretos de ferro com durezas superiores a 1200 HV, porém, a nitretação DC produziu maior quantidade de nitretos de ferro do que o tratamento de tela ativa. Os resultados de erosão por cavitação do aço nitretado DC mostraram que a precipitação de nitretos de ferro é prejudicial para a resistência à cavitação já que reduziu drasticamente o período de incubação e aumentou a taxa de perda de massa nos estágios iniciais do ensaio; entretanto, depois da remoção desses nitretos de ferro, a camada nitretada formada somente por martensita expandida resistiu bem ao dano por cavitação. Já no caso do aço nitretado com tela ativa, a resistência à erosão por cavitação aumentou 27 vezes quando comparada com o aço AISI 410 sem nitretar, fato atribuído à pequena fração volumétrica e ao menor tamanho dos nitretos de ferro presente na camada nitretada, às maiores relações H/E* e H3/E*2 e à alta recuperação elástica da martensita expandida. A remoção de massa ocorreu, principalmente, pela formação de crateras e de destacamento de material da superfície dos grãos por fratura frágil sem evidente deformação plástica. As perdas de massa acumulada mostradas pelo aço nitretado foram menores do que aquelas do aço AISI 410 nos ensaios de erosão e de erosão corrosão. O aço nitretado apresentou uma diminuição nas taxas de desgaste em ambos os ensaios de aproximadamente 50 % quando comparadas com o aço AISI 410. O mecanismo de remoção de material foi predominantemente dúctil, mesmo com o grande aumento na dureza. Os resultados de esclerometria linear instrumentada mostraram que a formação de martensita expandida possibilitou uma diminuição considerável do coeficiente de atrito em relação ao observado no caso do aço AISI 410 sem nitretar. O valor de carga crítica de falha foi de 14 N. O mecanismo de falha operante no aço nitretado foi trincamento por tensão.

Radiation stability of uranium mononitride /

"June 29, 1965."