Effect of electric field on ammonium perchlorate decomposition

A novel method of detecting the charge-carrying species in inorganic decomposable salts is described. In ammonium perchlorate it is observed that the charge-carrying species at temperatures 150 and 230°C are oppositely charged; i.e., they are negatively charged (ClO−4 ions) at 230°C and positively charged (H+ or NH+4) at 150°C.

Effect of GPS on understanding relationship between mobile map and environment : A field experiment

Objectives: GPS technology enables the visualisation of a map reader s location on a mobile map. Earlier research on the cognitive aspects of map reading identified that searching for map-environment points is an essential element for the process of determining one s location on a mobile map. Map-environment points refer to objects that are visualized on the map and are recognizable in the environment. However, because the GPS usually adds only one point to the map that has a relation to the environment, it does not provide a sufficient amount of information for self-location. The aim of the present thesis was to assess the effect of GPS on the cognitive processes involved in determining one s location on a map. Methods: The effect of GPS on self-location was studied in a field experiment. The subjects were shown a target on a mobile map, and they were asked to point in the direction of the target. In order for the map reader to be able to deduce the direction of the target, he/she has to locate himself/herself on the map. During the pointing tasks, the subjects were asked to think aloud. The data from the experiment were used to analyze the effect of the GPS on the time needed to perform the task. The subjects verbal data was used to assess the effect of the GPS on the number of landmark concepts mentioned during a task (landmark concepts are words referring to objects that can be recognized both on the map and in the environment). Results and conclusions: The results from the experiment indicate that the GPS reduces the time needed to locate oneself on a map. The analysis of the verbal data revealed that the GPS reduces the number of landmark concepts in the protocols. The findings suggest that the GPS guides the subject s search for the map-environment points and narrows the area on the map that must be searched for self-location.

Estimation Of Charge Transport Parameters And Equivalent Circuit For Poly Alkyl Thiophene Field-Effect Transistors

The small signal ac response is measured across the source-drain terminals of organic field-effect transistors (OFET) under dc bias to obtain the equivalent circuit parameters of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) and poly(3-hexyl thiophene) (P3HT) based devices. The numerically simulated response based on these parameters is in good agreement with the experimental data for PBTTT-FET except at low frequencies, while the P3HT-FET data show significant deviations. This indicates that the interface with the metal electrode is rather complex for the latter, involving additional circuit elements arising from contact impedance or charge injection processes. Such an investigation can help in identifying the operational bottlenecks and to improve the performance of OFETs.

Interfaces and traps in pentacene field-effect transistor

The equivalent circuit parameters for a pentacene organic field-effect transistor are determined from low frequency impedance measurements in the dark as well as under light illumination. The source-drain channel impedance parameters are obtained from Bode plot analysis and the deviations at low frequency are mainly due to the contact impedance. The charge accumulation at organic semiconductor-metal interface and dielectric-semiconductor interface is monitored from the response to light as an additional parameter to find out the contributions arising from photovoltaic and photoconductive effects. The shift in threshold voltage is due to the accumulation of photogenerated carriers under source-drain electrodes and at dielectric-semiconductor interface, and also this dominates the carrier transport. The charge carrier trapping at various interfaces and in the semiconductor is estimated from the dc and ac impedance measurements under illumination. (c) 2010 American Institute of Physics. doi: 10.1063/1.3517085]

Metastable extension of the fluorite phase field in Y2O3---ZrO2 and its effect on grain growth

Pure Y2O3 and Y2O3---ZrO2 solid solutions have been prepared by melt atomization and by pyrolysis of nitrate solutions. Extended solubility is readily achieved in both techniques for the entire composition range investigated: melts with 0–30% ZrO2 and precursors with 0–50% ZrO2. However, solidification of under cooled droplets yields almost exclusively single phase powders with the structure of cubic yttria (D53). In contrast, the pyrolysis route leads to a sequence of metastable microstructures beginning with a nanocrystalline disordered fluorite-based (C1) solid solution. Further heating leads to the evolution of much larger (micron size) flake crystals with a {001} texture, concurrent with partial ordering of the oxygen ions to the sites occupied in the D53 structure. The driving force for ordering and the rate of grain growth decrease with increasing ZrO2 addition. Abrupt heating to high temperatures or electron irradiation can induce ordering without substantial grain growth. There is no significant reduction in porosity during the recrystallization, which with the other observations suggests that grain growth is driven by the free energy available for the ordering transformation from fluorite to the yttria structure. This route offers opportunities for single crystal thin film development at relatively low processing temperatures.

Probing Single and Bilayer Graphene Field Effect Transistors By Raman Spectroscopy

This article is a review of our work related to Raman studies of single layer and bilayer graphenes as a function Fermi level shift achieved by electrochemically top gating a field effect transistor. Combining the transport and in situ Raman studies of the field effect devices, a quantitative understanding is obtained of the phonon renormalization due to doping of graphene. Results are discussed in the light of time dependent perturbation theory, with electron phonon coupling parameter as an input from the density functional theory. It is seen that phonons near and Gamma and K points of the Brillouin zone are renormalized very differently by doping. Further, Gamma-phonon renormalization is different in bilayer graphene as compared to single layer, originating from their different electronic band structures near the zone boundary K-point. Thus Raman spectroscopy is not only a powerful probe to characterize the number of layers and their quality in a graphene sample, but also to quantitatively evaluate electron phonon coupling required to understand the performance of graphene devices.

High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of 10(4) and a subthreshold slope of similar to 110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.

Metastable extension of the fluorite phase field in Y2O3---ZrO2 and its effect on grain growth

Pure Y2O3 and Y2O3-ZrO2 solid solutions have been prepared by melt atomization and by pyrolysis of nitrate solutions. Extended solubility is readily achieved in both techniques for the entire composition range investigated: melts with 0-30% ZrO2 and precursors with 0-50% ZrO2. However, solidification of under cooled droplets yields almost exclusively single phase powders with the structure of cubic yttria (D5(3)). In contrast, the pyrolysis route leads to a sequence of metastable microstructures beginning with a nanocrystalline disordered fluorite-based (C1) solid solution. Further heating leads to the evolution of much larger (micron size) flake crystals with a {001} texture, concurrent with partial ordering of the oxygen ions to the sites occupied in the D5(3) structure. The driving force for ordering and the rate of grain growth decrease with increasing ZrO2 addition. Abrupt heating to high temperatures or electron irradiation can induce ordering without substantial grain growth. There is no significant reduction in porosity during the recrystallization, which with the other observations suggests that grain growth is driven by the free energy available for the ordering transformation from fluorite to the yttria structure. This route offers opportunities for single crystal thin film development at relatively low processing temperatures.

Effect of magnetic field on the binding energy of a hydrogenic donor in a vertical bar z vertical bar(2/3) quantum well

We have calculated the binding energy of a hydrogenic donor in a quantum well with potential shape proportional to \z\(2/3) as a function of the width of the quantum well and the barrier height under an applied uniform magnetic field along the a axis. As the well width decreases, the binding energy increases initially up to a critical well width (which is nearly the same for all magnetic fields) at which there is a turnover. The results are qualitatively similar to those of a hydrogenic donor in a rectangular well. We have also calculated [rho(2)](1/2) and [z(2)](1/2) for the donor electron. [rho(2)](1/2) is found to be strongly dependent on the magnetic field for a given well width and weakly dependent on the well width and the barrier height, for a given value of magnetic field [z(2)](1/2) is weakly dependent on the applied magnetic field. The probability of finding the donor electron inside the well shows a rapid decrease as the well width is reduced at nearly the well width at which the binding energy shows a maximum.

Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source

Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.

Nature of Electronic States in Atomically Thin MoS(2) Field-Effect Transistors

We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Effect of AC&DC field on the dielectric response of (Pb,La)TiO3 thin films

Lanthanum doped lead titanate thin films are the potential candidates for the capacitors, actuators and pyroelectric sensor applications due to their excellent dielectric, and ferroelectric properties. Lanthanum doped lead titanate thin films are grown on platinum coated Si substrates by excimer laser ablation technique. A broad diffused phase transition with the maximum dielectric permittivity (ϵmax) shifting to higher temperatures with the increase of frequency, along with frequency dispersion below Tc, which are the signatures of the relaxor like characteristics were observed. The dielectric properties are investigated from −60°C to 200°C with an application of different dc fields. With increasing dc field, the dielectric constant is observed to reduce and phase transition temperature shifted to higher temperature. With the increased ac signal amplitude of the applied frequency, the magnitude of the dielectric constant is increasing and the frequency dispersion is observed in ferroelectric phase, whereas in paraelectric phase, there is no dispersion has been observed. The results are correlated with the existing theories.

Longitudinal Magnetic Field Effect on Nonlocal Ultrasonic Vibration Analysis of Single-Walled Carbon Nanotubes Based on Wave Propagation Approach

This paper studies the effect of longitudinal magnetic field on ultrasonic vibration in single walled carbon nanotubes (CNTs) based on nonlocal continuum medium theory. Governing partial differential equations of CNTs are derived by considering the Lorentz magnetic forces applied on CNTs induced by a longitudinal magnetic field through Maxwell equations. The vibration characteristics of CNTs under a longitudinal magnetic field are obtained by solving the governing equations via wave propagation approach. The effects of longitudinal magnetic field on vibration of CNTs are discussed through numerical experiments. The present analysis show that vibration frequencies of CNTs drops dramatically in the presence of the magnetic field for various circumferential wavenumbers. Such effect is also observed for various boundary conditions of the CNT. New features for the effect of longitudinal magnetic field on ultrasonic vibration of CNTs, presented in this paper are useful in the design of nano-drive device, nano-oscillator and actuators and nano-electron technology, where carbon nanotubes act as basic elements.