High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors
Data(s) |
2010
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Resumo |
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of 10(4) and a subthreshold slope of similar to 110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/36609/1/High.pdf Majumdar, Kausik and Murali VRM, Kota and Bhat, Navakanta and Xia, Fengnian and Lin, Yu-Ming (2010) High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors. In: International Electron Devices Meeting (IEDM), DEC 06-08, 2010 , San Francisco, CA. |
Publicador |
IEEE |
Relação |
http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=5703464&queryText%3DHigh+On-Off+Ratio+Bilayer+Graphene+Complementary+Field+Effect+Transistors%26openedRefinements%3D*%26searchField%3DSearch+All http://eprints.iisc.ernet.in/36609/ |
Palavras-Chave | #Electrical Communication Engineering #Others |
Tipo |
Conference Paper PeerReviewed |