Weak measurement of qubit oscillations with strong response detectors: Violation of the fundamental bound imposed on linear detectors

Qubit measurement by mesoscopic charge detectors has received great interest in the community of mesoscopic transport and solid-state quantum computation, and some controversial issues still remain unresolved. In this work, we revisit the continuous weak measurement of a solid-state qubit by single electron transistors (SETs) in nonlinear-response regime. For two SET models typically used in the literature, we find that the signal-to-noise ratio can violate the universal upper bound "4," which is imposed quantum mechanically on linear-response detectors. This different result can be understood by means of the cross correlation of the detector currents by viewing the two junctions of the single SET as two detectors. Possible limitation of the potential-scattering approach to this result is also discussed.

Variational calculations of neutral bound excitons in GaAs quantum-well wires

The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.

Recombination property of nitrogen-acceptor-bound states in ZnO

The recombination property of nitrogen (N)-related acceptor-bound states in ZnO has been investigated by photoluminescence (PL), time-resolved PL, and selective PL. Several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large Coulomb interaction. It is strongly suggested that bound exciton emission dominates the recombination process related to the N acceptor. The recombination lifetime is 750 ps and the binding energy is 67 meV for N-acceptor-bound exciton at low temperature. (c) 2006 American Institute of Physics.

Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells

Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bound to an ionized donor impurity (D+,X) in GaAs-AlxGa1-xAs quantum wells for the values of the well width from 10 to 300 Angstrom, when the dopant is located in the center of the well and at the edge of the well. The theoretical results confirm that the previous experimental speculation proposed by Reynolds tit al. [Phys. Rev. B 40, 6210 (1989)] is the binding energy of D+,X for the dopant at the edge of the well. in addition, we also calculate the center-of-mass wave function of the exciton and the average interparticle distances. The results are discussed in detail.

Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells

The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or the edge in GaAs-AlxGa1-xAs quantum wells is calculated variationally for the well width from 10 to 300 Angstrom by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.

Binding energy of excitons bound to neutral donors in two-dimensional semiconductors

The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.

Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum well structures

We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state in the continuum has little contribution to the absorption linewidth. We have grown a sample whose MQW region contains two kinds of wells with a minor thickness inhomogeneity. Its resultant absorption linewidth is six times as large as that of homogeneous well sample, which is in good agreement with our theoretical analysis. Thus we can suggest that the wider absorption spectra reported by many authors may be due to the well width inhomogeneity. (C) 1998 American Institute of Physics. [S0003-6951(98)03430-5]

The second dissociation threshold bound levels of hydrogen molecule

The near-threshold highly bound states of all three stable isotopic variants of molecular hydrogen have been studied. Numerous perturbations and unexpected transitions are observed as far as 1cm(-1) just below the second dissociation threshold. This complex structure may arise from a combination of nonadiabatic coupling between B, B', C electronic states, perturbations due to. ne and hyperfine interactions, and strong shape resonances. The perturbed near-threshold states and vibrational continuum exhibit finegrained structure, differing greatly between isotopes because of varying nonadiabatic coupling.

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.

Elastic scattering angular dispersion of weakly bound nucleus F-17

The differential cross-sections for elastic scattering of F-17 and O-17 on Pb-208 have been measured at Radioactive Ion Beam Line at Lanzhou (RIBLL). The variation of the logarithms of differential cross-sections with the square of scattering angles, viz. angulax dispersion plot, shows clearly that there exists a turning point in the range of small scattering angles (6 degrees-20 degrees) for F-17 due to its exotic structure, while no turning point was observed for O-17. The experimental results have been compared with previous data of other groups. Systematical analysis on the available data seems to conclude that there is an exotic behavior of elastic scattering angular dispersion of weakly bound nuclei with halo or skin structure as compared with that of the stable nuclei. Therefore the fact that the turning point of the elastic scattering angular dispersion plot appears at small angle for weakly bound nuclei can be used as a new probe to investigate the halo and skin phenomenon.

Exotic behavior of elastic scattering differential cross-sections of weakly bound nucleus F-17 at small angles

The differential cross-sections for elastic scattering of F-17 and O-17 on Pb-208 have been measured at Radioactive Ion Beam Line at Lanzhou (RIBLL). The variation of the logarithms of differential cross-sections with the square of scattering angles shows clearly that there exists a turning point in the range of small scattering angles (6 degrees-20 degrees) for F-17 having exotic structure, while no turning point was observed in the O-17 elastic scattering. The experimental results have been compared with previous data. Systematical analysis on the available data seems to conclude that there is an exotic behavior of elastic scattering differential cross-sections of weakly bound nuclei with halo or skin structure as compared with that of the ordinary nuclei near stable line. Therefore the fact that the turning point of the logarithms of differential cross-sections appears at small angle for weakly bound nuclei could be used as a new probe to investigate the halo and skin phenomenon.

Exotic behaviour of angular dispersion of weakly bound nucleus F-17 at small angles

The differential cross sections of F-17 and O-17 elastic scattering products on Pb-208 have been measured at the Radioactive Ion Beam Line at Lanzhou (RIBLL). Two angular dispersion plots of ln(d sigma/d theta) versus theta 2 are obtained from the angular distribution of the elastic scattering differential cross sections. The angular dispersion plot exhibits a clear turning point for F-17 in the range of small scattering angles 6 degrees-20 degrees due to its exotic structure, but for O-17, the turning point is not observed in the same angular range. The experimental results have been compared with previous data of other groups. Systematical analysis on the available data supports the above conclusion that there is an exotic behaviour of the angular dispersion plot of weakly bound nuclei with halo or skin structure as compared with that of the ordinary nuclei near stable line. Therefore the turning point of the angular dispersion plot appears at small angle for weakly bound nuclei with halo or skin structure, and can be used as a new probe to investigate the halo and skin phenomena of weakly bound nuclei.